JP2020031200A - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
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- JP2020031200A JP2020031200A JP2018157826A JP2018157826A JP2020031200A JP 2020031200 A JP2020031200 A JP 2020031200A JP 2018157826 A JP2018157826 A JP 2018157826A JP 2018157826 A JP2018157826 A JP 2018157826A JP 2020031200 A JP2020031200 A JP 2020031200A
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- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 60
- 239000007789 gas Substances 0.000 description 203
- 239000007795 chemical reaction product Substances 0.000 description 24
- 230000007423 decrease Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- -1 but for example Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
Description
第1の実施形態の気相成長装置は、反応室と、反応室の上に設けられ、プロセスガスが導入されるガス室と、ガス室から反応室にプロセスガスを供給する複数のガス流路と、を備え、複数のガス流路のうち少なくとも1つは、第1の領域と、第1の領域と反応室との間に位置する第2の領域とを有し、第1の領域はプロセスガスの流れる方向に垂直な面における第1の開口断面積と上記方向の第1の長さとを有し、第2の領域は上記方向に垂直な面における第2の開口断面積と上記方向の第2の長さとを有し、第1の開口断面積は第2の開口断面積よりも小さく、第1の長さは第2の長さ以下である。
第2の実施形態の気相成長装置は、第1の領域は、第2の領域と分離可能な部品で形成される点で、第1の実施形態の気相成長装置と異なっている。以下、第1の実施形態と重複する内容については記述を一部省略する。
第3の実施形態の気相成長装置は、ガス室が1つである点で、第1の実施形態の気相成長装置と異なっている。以下、第1の実施形態と重複する内容については記述を一部省略する。
11 第1のガス室(ガス室)
12 第2のガス室
15 ガス室
14 サセプタ(ホルダ)
51 第1のガス流路(ガス流路)
51a 上部領域(第1の領域)
51b 下部領域(第2の領域)
51x 部品
52 第2のガス流路
52a 上部領域
52b 下部領域
100 気相成長装置
300 気相成長装置
G0 プロセスガス
G1 第1のプロセスガス(プロセスガス)
G2 第2のプロセスガス
W ウェハ(基板)
L1 第1の長さ
L2 第2の長さ
S1 第1の開口断面積
S2 第2の開口断面積
Claims (5)
- 反応室と、
前記反応室の上に設けられ、プロセスガスが導入されるガス室と、
前記ガス室から前記反応室に前記プロセスガスを供給する複数のガス流路と、
を備え、
前記複数のガス流路のうち少なくとも1つは、第1の領域と、前記第1の領域と前記反応室との間に位置する第2の領域とを有し、前記第1の領域は前記プロセスガスの流れる方向に垂直な面における第1の開口断面積と前記方向の第1の長さとを有し、前記第2の領域は前記方向に垂直な面における第2の開口断面積と前記方向の第2の長さとを有し、前記第1の開口断面積は前記第2の開口断面積よりも小さく、前記第1の長さは前記第2の長さ以下である気相成長装置。 - 前記第1の領域は、前記第2の領域と分離可能な部品で形成される請求項1記載の気相成長装置。
- 前記第1の領域は第1のコンダクタンスを有し、前記第2の領域は第2のコンダクタンスを有し、前記第2のコンダクタンスに対する前記第1のコンダクタンスの比率は、1%以上40%以下である請求項1又は請求項2記載の気相成長装置。
- 前記第2の領域の内壁面と前記方向に対し垂直な面とのなす角度は80度以上である請求項1ないし請求項3いずれか一項記載の気相成長装置。
- 前記第2の長さは5mm以上である請求項1ないし請求項4いずれか一項記載の気相成長装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018157826A JP7365761B2 (ja) | 2018-08-24 | 2018-08-24 | 気相成長装置 |
PCT/JP2019/028426 WO2020039809A1 (ja) | 2018-08-24 | 2019-07-19 | 気相成長装置 |
CN201980055815.0A CN112640045B (zh) | 2018-08-24 | 2019-07-19 | 气相生长装置 |
EP19851325.1A EP3843125A4 (en) | 2018-08-24 | 2019-07-19 | VAPOR PHASE GROWING DEVICE |
TW108125796A TWI810333B (zh) | 2018-08-24 | 2019-07-22 | 氣相成長裝置 |
US17/163,714 US20210180208A1 (en) | 2018-08-24 | 2021-02-01 | Vapor phase growth apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018157826A JP7365761B2 (ja) | 2018-08-24 | 2018-08-24 | 気相成長装置 |
Publications (3)
Publication Number | Publication Date |
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JP2020031200A true JP2020031200A (ja) | 2020-02-27 |
JP2020031200A5 JP2020031200A5 (ja) | 2021-09-02 |
JP7365761B2 JP7365761B2 (ja) | 2023-10-20 |
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JP2018157826A Active JP7365761B2 (ja) | 2018-08-24 | 2018-08-24 | 気相成長装置 |
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US (1) | US20210180208A1 (ja) |
EP (1) | EP3843125A4 (ja) |
JP (1) | JP7365761B2 (ja) |
CN (1) | CN112640045B (ja) |
TW (1) | TWI810333B (ja) |
WO (1) | WO2020039809A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114622181A (zh) * | 2020-12-14 | 2022-06-14 | 纽富来科技股份有限公司 | 气相生长装置及气相生长方法 |
WO2022130926A1 (ja) * | 2020-12-14 | 2022-06-23 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7152970B2 (ja) * | 2019-03-01 | 2022-10-13 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
WO2021102726A1 (zh) * | 2019-11-27 | 2021-06-03 | 东莞市中镓半导体科技有限公司 | 一种用于GaN材料生长的线性喷头 |
JP2022130880A (ja) * | 2021-02-26 | 2022-09-07 | 株式会社Screenホールディングス | 基板処理装置、および、基板処理方法 |
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CN114622181B (zh) * | 2020-12-14 | 2024-05-24 | 纽富来科技股份有限公司 | 气相生长装置及气相生长方法 |
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EP3843125A1 (en) | 2021-06-30 |
TWI810333B (zh) | 2023-08-01 |
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CN112640045A (zh) | 2021-04-09 |
CN112640045B (zh) | 2024-04-09 |
WO2020039809A1 (ja) | 2020-02-27 |
TW202009322A (zh) | 2020-03-01 |
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