JP2015063523A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015063523A5 JP2015063523A5 JP2014179115A JP2014179115A JP2015063523A5 JP 2015063523 A5 JP2015063523 A5 JP 2015063523A5 JP 2014179115 A JP2014179115 A JP 2014179115A JP 2014179115 A JP2014179115 A JP 2014179115A JP 2015063523 A5 JP2015063523 A5 JP 2015063523A5
- Authority
- JP
- Japan
- Prior art keywords
- surface treatment
- composition
- organometallic
- film
- treatment agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 description 14
- 150000002902 organometallic compounds Chemical group 0.000 description 13
- 239000012756 surface treatment agent Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- BWVAOONFBYYRHY-UHFFFAOYSA-N [4-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=C(CO)C=C1 BWVAOONFBYYRHY-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/017,281 US9296879B2 (en) | 2013-09-03 | 2013-09-03 | Hardmask |
| US14/017,281 | 2013-09-03 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015063523A JP2015063523A (ja) | 2015-04-09 |
| JP2015063523A5 true JP2015063523A5 (enExample) | 2018-12-06 |
| JP6578092B2 JP6578092B2 (ja) | 2019-09-18 |
Family
ID=52583708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014179115A Active JP6578092B2 (ja) | 2013-09-03 | 2014-09-03 | ハードマスク |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9296879B2 (enExample) |
| JP (1) | JP6578092B2 (enExample) |
| KR (1) | KR102307612B1 (enExample) |
| CN (1) | CN104635424B (enExample) |
| TW (1) | TWI565762B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108028178A (zh) * | 2015-09-29 | 2018-05-11 | 罗门哈斯电子材料有限责任公司 | 制备石墨碳薄片的方法 |
| CN108055840A (zh) * | 2015-09-29 | 2018-05-18 | 罗门哈斯电子材料有限责任公司 | 制备复合多层结构的方法 |
| KR102082145B1 (ko) * | 2015-09-29 | 2020-02-27 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 다층 구조체의 제조 방법 |
| KR102513862B1 (ko) * | 2018-06-01 | 2023-03-23 | 최상준 | 반사방지용 하드마스크 조성물 |
| KR102287507B1 (ko) * | 2018-08-16 | 2021-08-09 | 삼성에스디아이 주식회사 | 하드마스크 조성물 및 패턴 형성 방법 |
| CN112584938B (zh) * | 2018-08-30 | 2022-12-06 | 东京毅力科创株式会社 | 基板处理方法和基板处理装置 |
| KR102400603B1 (ko) | 2019-03-29 | 2022-05-19 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법 |
| US20240111210A1 (en) * | 2022-08-29 | 2024-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and formation method thereof |
| JP2024122656A (ja) | 2023-02-28 | 2024-09-09 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002053669A (ja) * | 2000-06-01 | 2002-02-19 | Osaka Organic Chem Ind Ltd | 多次元有機・無機複合体化合物およびその製造方法 |
| US7427529B2 (en) * | 2000-06-06 | 2008-09-23 | Simon Fraser University | Deposition of permanent polymer structures for OLED fabrication |
| US7067346B2 (en) | 2000-06-06 | 2006-06-27 | Simon Foster University | Titanium carboxylate films for use in semiconductor processing |
| JP2004512672A (ja) * | 2000-06-06 | 2004-04-22 | イーケーシー テクノロジー，インコーポレイティド | 電子材料製造法 |
| US6740469B2 (en) | 2002-06-25 | 2004-05-25 | Brewer Science Inc. | Developer-soluble metal alkoxide coatings for microelectronic applications |
| US6872506B2 (en) * | 2002-06-25 | 2005-03-29 | Brewer Science Inc. | Wet-developable anti-reflective compositions |
| US20040048194A1 (en) | 2002-09-11 | 2004-03-11 | International Business Machines Corporation | Mehod for forming a tunable deep-ultraviolet dielectric antireflection layer for image transfer processing |
| US7172849B2 (en) * | 2003-08-22 | 2007-02-06 | International Business Machines Corporation | Antireflective hardmask and uses thereof |
| JP2005247595A (ja) * | 2004-03-01 | 2005-09-15 | Osaka Organic Chem Ind Ltd | 複合焼成体およびその製造方法 |
| JP2005289885A (ja) * | 2004-03-31 | 2005-10-20 | Osaka Organic Chem Ind Ltd | 多次元有機・無機複合体化合物、複合焼成体およびこれらの製造方法 |
| KR100713231B1 (ko) * | 2005-12-26 | 2007-05-02 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법 |
| FR2916199B1 (fr) | 2007-05-14 | 2012-10-19 | Inst Francais Du Petrole | Procede d'oligomerisation des olefines utilisant une composition catalytique comprenant un complexe organometallique contenant un ligand phenoxy fonctionnalise par un hetero-atome |
| JP5066471B2 (ja) | 2008-03-26 | 2012-11-07 | 富士フイルム株式会社 | 平版印刷版原版の製版方法 |
| JP5660268B2 (ja) | 2008-09-30 | 2015-01-28 | 富士フイルム株式会社 | 平版印刷版原版、平版印刷版の製版方法及び重合性モノマー |
| JP5757749B2 (ja) | 2010-05-19 | 2015-07-29 | 富士フイルム株式会社 | 重合性組成物 |
| US8647809B2 (en) | 2011-07-07 | 2014-02-11 | Brewer Science Inc. | Metal-oxide films from small molecules for lithographic applications |
| KR101964072B1 (ko) | 2011-07-20 | 2019-04-01 | 닛산 가가쿠 가부시키가이샤 | 티탄 및 실리콘 함유 리소그래피용 박막 형성 조성물 |
| US9070548B2 (en) | 2012-03-06 | 2015-06-30 | Rohm And Haas Electronic Materials Llc | Metal hardmask compositions |
| US8795774B2 (en) | 2012-09-23 | 2014-08-05 | Rohm And Haas Electronic Materials Llc | Hardmask |
| US9136123B2 (en) | 2013-01-19 | 2015-09-15 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
| US9171720B2 (en) | 2013-01-19 | 2015-10-27 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
| US8927439B1 (en) | 2013-07-22 | 2015-01-06 | Rohm And Haas Electronic Materials Llc | Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent |
| US20150024522A1 (en) | 2013-07-22 | 2015-01-22 | Rohm And Haas Electronic Materials Llc | Organometal materials and process |
-
2013
- 2013-09-03 US US14/017,281 patent/US9296879B2/en active Active
-
2014
- 2014-09-03 JP JP2014179115A patent/JP6578092B2/ja active Active
- 2014-09-03 CN CN201410755864.4A patent/CN104635424B/zh not_active Expired - Fee Related
- 2014-09-03 TW TW103130352A patent/TWI565762B/zh active
- 2014-09-03 KR KR1020140117265A patent/KR102307612B1/ko active Active
-
2015
- 2015-10-28 US US14/925,147 patent/US9563126B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015063523A5 (enExample) | ||
| TWI486364B (zh) | 硬遮罩 | |
| JP7437455B2 (ja) | リソグラフィ用組成物及びそれの使用法 | |
| TWI565762B (zh) | 硬遮罩 | |
| CN106336356B (zh) | 聚亚芳基材料 | |
| JP6458799B2 (ja) | パターン形成方法 | |
| JP2016526183A5 (enExample) | ||
| TWI553042B (zh) | 圖型反轉膜形成用組成物及反轉圖型形成方法 | |
| JP2020514509A5 (enExample) | ||
| CN104926748B (zh) | 用于硬掩模组合物的单体和包含此单体的硬掩模组合物及使用硬掩模组合物形成图案的方法 | |
| JP5842778B2 (ja) | パターン形成方法 | |
| JPWO2013073505A1 (ja) | パターン形成用自己組織化組成物及びパターン形成方法 | |
| TWI753112B (zh) | 嵌段共聚物及含有相分離結構之結構體的製造方法 | |
| TWI678386B (zh) | 使用含矽墊層之方法 | |
| JP6671680B2 (ja) | ブロック共重合体、ブロック共重合体の製造方法及び相分離構造を含む構造体の製造方法 | |
| JP2006045523A5 (enExample) | ||
| KR101711920B1 (ko) | 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 | |
| JP2914852B2 (ja) | 回路保護用膜 | |
| US10676636B2 (en) | Brush composition, and method of producing structure containing phase-separated structure | |
| JP2023184588A5 (enExample) | ||
| JP6439520B2 (ja) | 半導体デバイス製造用組成物及び加工基板の製造方法 | |
| JP4501207B2 (ja) | ポリベンゾオキサゾール樹脂の製造方法とこの樹脂により作製した絶縁膜 | |
| TW202500610A (zh) | 包含相分離結構之結構體的製造方法，及組成物 | |
| TW202500611A (zh) | 嵌段共聚物、基底劑、相分離結構形成用樹脂組成物，及包含相分離結構之結構體的製造方法 | |
| JP2020111769A5 (enExample) |