KR102307612B1 - 하드마스크 - Google Patents

하드마스크 Download PDF

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Publication number
KR102307612B1
KR102307612B1 KR1020140117265A KR20140117265A KR102307612B1 KR 102307612 B1 KR102307612 B1 KR 102307612B1 KR 1020140117265 A KR1020140117265 A KR 1020140117265A KR 20140117265 A KR20140117265 A KR 20140117265A KR 102307612 B1 KR102307612 B1 KR 102307612B1
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South Korea
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composition
group
integer
metal
beta
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Korean (ko)
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KR20150027012A (ko
Inventor
신타로 야마다
데얀 왕
사브리나 웡
콩 류
쳉-바이 슈
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롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0091—Complexes with metal-heteroatom-bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/10—Metal complexes of organic compounds not being dyes in uncomplexed form
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B69/00—Dyes not provided for by a single group of this subclass
    • C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020140117265A 2013-09-03 2014-09-03 하드마스크 Active KR102307612B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/017,281 2013-09-03
US14/017,281 US9296879B2 (en) 2013-09-03 2013-09-03 Hardmask

Publications (2)

Publication Number Publication Date
KR20150027012A KR20150027012A (ko) 2015-03-11
KR102307612B1 true KR102307612B1 (ko) 2021-10-01

Family

ID=52583708

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140117265A Active KR102307612B1 (ko) 2013-09-03 2014-09-03 하드마스크

Country Status (5)

Country Link
US (2) US9296879B2 (enExample)
JP (1) JP6578092B2 (enExample)
KR (1) KR102307612B1 (enExample)
CN (1) CN104635424B (enExample)
TW (1) TWI565762B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017054123A1 (en) * 2015-09-29 2017-04-06 Rohm And Haas Electronic Materials Llc Method of making graphitic carbon sheet
US20180265363A1 (en) * 2015-09-29 2018-09-20 Rohm And Haas Electronic Materials Llc A method of making a composite multilayer structure
KR102082145B1 (ko) * 2015-09-29 2020-02-27 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 다층 구조체의 제조 방법
KR102513862B1 (ko) * 2018-06-01 2023-03-23 최상준 반사방지용 하드마스크 조성물
KR102287507B1 (ko) * 2018-08-16 2021-08-09 삼성에스디아이 주식회사 하드마스크 조성물 및 패턴 형성 방법
JP7045468B2 (ja) * 2018-08-30 2022-03-31 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102400603B1 (ko) 2019-03-29 2022-05-19 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
US20240111210A1 (en) * 2022-08-29 2024-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and formation method thereof
JP2024122656A (ja) 2023-02-28 2024-09-09 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法

Citations (3)

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JP2009237175A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版原版の製版方法
JP2010105382A (ja) 2008-09-30 2010-05-13 Fujifilm Corp 平版印刷版原版、平版印刷版の製版方法及び重合性モノマー
JP2012122045A (ja) 2010-05-19 2012-06-28 Fujifilm Corp 重合性組成物

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JP2002053669A (ja) * 2000-06-01 2002-02-19 Osaka Organic Chem Ind Ltd 多次元有機・無機複合体化合物およびその製造方法
US7427529B2 (en) * 2000-06-06 2008-09-23 Simon Fraser University Deposition of permanent polymer structures for OLED fabrication
WO2001095690A1 (en) * 2000-06-06 2001-12-13 Ekc Technology, Inc. Method of making electronic materials
US7067346B2 (en) 2000-06-06 2006-06-27 Simon Foster University Titanium carboxylate films for use in semiconductor processing
US6872506B2 (en) * 2002-06-25 2005-03-29 Brewer Science Inc. Wet-developable anti-reflective compositions
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
US20040048194A1 (en) 2002-09-11 2004-03-11 International Business Machines Corporation Mehod for forming a tunable deep-ultraviolet dielectric antireflection layer for image transfer processing
US7172849B2 (en) * 2003-08-22 2007-02-06 International Business Machines Corporation Antireflective hardmask and uses thereof
JP2005247595A (ja) * 2004-03-01 2005-09-15 Osaka Organic Chem Ind Ltd 複合焼成体およびその製造方法
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KR100713231B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
FR2916199B1 (fr) 2007-05-14 2012-10-19 Inst Francais Du Petrole Procede d'oligomerisation des olefines utilisant une composition catalytique comprenant un complexe organometallique contenant un ligand phenoxy fonctionnalise par un hetero-atome
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JP2009237175A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版原版の製版方法
JP2010105382A (ja) 2008-09-30 2010-05-13 Fujifilm Corp 平版印刷版原版、平版印刷版の製版方法及び重合性モノマー
JP2012122045A (ja) 2010-05-19 2012-06-28 Fujifilm Corp 重合性組成物

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Also Published As

Publication number Publication date
US9563126B2 (en) 2017-02-07
JP2015063523A (ja) 2015-04-09
TW201520279A (zh) 2015-06-01
CN104635424A (zh) 2015-05-20
TWI565762B (zh) 2017-01-11
KR20150027012A (ko) 2015-03-11
US20150064612A1 (en) 2015-03-05
CN104635424B (zh) 2019-10-18
US9296879B2 (en) 2016-03-29
JP6578092B2 (ja) 2019-09-18
US20160048077A1 (en) 2016-02-18

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