JP2016526183A5 - - Google Patents
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- Publication number
- JP2016526183A5 JP2016526183A5 JP2016513365A JP2016513365A JP2016526183A5 JP 2016526183 A5 JP2016526183 A5 JP 2016526183A5 JP 2016513365 A JP2016513365 A JP 2016513365A JP 2016513365 A JP2016513365 A JP 2016513365A JP 2016526183 A5 JP2016526183 A5 JP 2016526183A5
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- alkylene
- acrylate
- methacrylate
- photoresist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920000642 polymer Polymers 0.000 claims description 56
- 239000000203 mixture Substances 0.000 claims description 44
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 42
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 39
- 150000001875 compounds Chemical class 0.000 claims description 36
- 239000002253 acid Substances 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 30
- 125000003161 (C1-C6) alkylene group Chemical group 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 23
- 239000007795 chemical reaction product Substances 0.000 claims description 21
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 20
- 229920003986 novolac Polymers 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical class OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 claims description 16
- 230000004913 activation Effects 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 16
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000008199 coating composition Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 12
- 125000002947 alkylene group Chemical group 0.000 claims description 11
- 239000002585 base Substances 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 150000002734 metacrylic acid derivatives Chemical class 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 125000004122 cyclic group Chemical group 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 6
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000004377 microelectronic Methods 0.000 claims description 4
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 125000003107 substituted aryl group Chemical group 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 3
- -1 alkyl acetates Chemical class 0.000 claims description 3
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical group C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Chemical group 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 claims description 2
- 229940090181 propyl acetate Drugs 0.000 claims description 2
- 230000003381 solubilizing effect Effects 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000003709 fluoroalkyl group Chemical group 0.000 claims 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/896,936 US9291909B2 (en) | 2013-05-17 | 2013-05-17 | Composition comprising a polymeric thermal acid generator and processes thereof |
| US13/896,936 | 2013-05-17 | ||
| PCT/EP2014/059999 WO2014184308A1 (en) | 2013-05-17 | 2014-05-15 | A composition comprising a polymeric thermal acid generator and processes thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016526183A JP2016526183A (ja) | 2016-09-01 |
| JP2016526183A5 true JP2016526183A5 (enExample) | 2017-04-27 |
| JP6342993B2 JP6342993B2 (ja) | 2018-06-13 |
Family
ID=50933134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016513365A Expired - Fee Related JP6342993B2 (ja) | 2013-05-17 | 2014-05-15 | ポリマー型熱酸発生剤を含む組成物及びそれの方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9291909B2 (enExample) |
| EP (1) | EP2997058A1 (enExample) |
| JP (1) | JP6342993B2 (enExample) |
| KR (1) | KR20160011183A (enExample) |
| CN (1) | CN105164172B (enExample) |
| SG (1) | SG11201506923PA (enExample) |
| TW (1) | TWI617890B (enExample) |
| WO (1) | WO2014184308A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9530662B2 (en) * | 2015-02-25 | 2016-12-27 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits using directed self-assembly including a substantially periodic array of topographical features that includes etch resistant topographical features for transferability control |
| US10269623B2 (en) | 2015-06-22 | 2019-04-23 | Intel Corporation | Image tone-reversal with a dielectric using bottom-up cross-linking for back end of line (BEOL) interconnects |
| US9530663B1 (en) * | 2015-06-23 | 2016-12-27 | Nanya Technology Corp. | Method for forming a pattern |
| US9574104B1 (en) | 2015-10-16 | 2017-02-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions and processes for self-assembly of block copolymers |
| JP2017157632A (ja) * | 2016-02-29 | 2017-09-07 | 東芝メモリ株式会社 | 半導体装置の製造方法及びパターン形成方法 |
| US9869933B2 (en) * | 2016-03-07 | 2018-01-16 | Rohm And Haas Electronic Materials Llc | Pattern trimming methods |
| US9910355B2 (en) * | 2016-07-29 | 2018-03-06 | Rohm And Haas Electronic Materials Llc | Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom |
| JP6757618B2 (ja) * | 2016-08-01 | 2020-09-23 | 東京応化工業株式会社 | レジストパターン厚肉化用ポリマー組成物、及びレジストパターン形成方法 |
| JP6757623B2 (ja) * | 2016-08-10 | 2020-09-23 | 東京応化工業株式会社 | レジストパターン厚肉化用ポリマー組成物、及びレジストパターン形成方法 |
| EP3500637B1 (en) | 2016-08-18 | 2022-06-22 | Merck Patent GmbH | Polymer compositions for self-assembly applications |
| TWI737872B (zh) | 2016-12-21 | 2021-09-01 | 德商馬克專利公司 | 用於嵌段共聚物之自組裝之新穎組合物及方法 |
| WO2018131495A1 (ja) * | 2017-01-10 | 2018-07-19 | Jsr株式会社 | カバー膜形成方法、基材の処理方法及び組成物 |
| US10691023B2 (en) * | 2017-08-24 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for performing lithography process with post treatment |
| FR3075774B1 (fr) * | 2017-12-21 | 2021-07-30 | Commissariat Energie Atomique | Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie |
| JPWO2019131953A1 (ja) * | 2017-12-27 | 2020-12-24 | Jsr株式会社 | パターン形成方法及び感放射線性組成物 |
| CN114585969B (zh) * | 2019-09-19 | 2025-02-07 | 东京毅力科创株式会社 | 形成窄沟槽的方法 |
| US11682559B2 (en) | 2020-06-11 | 2023-06-20 | Tokyo Electron Limited | Method to form narrow slot contacts |
| US11747733B2 (en) * | 2021-01-08 | 2023-09-05 | Tokyo Electron Limited | Freeze-less methods for self-aligned double patterning |
| US20220291586A1 (en) * | 2021-03-10 | 2022-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Underlayer composition and method of manufacturing a semiconductor device |
| CN113835296A (zh) * | 2021-09-28 | 2021-12-24 | 之江实验室 | 一种飞秒激光直写光刻胶组合物 |
| KR102845195B1 (ko) * | 2024-09-03 | 2025-08-13 | 유한회사 디씨티머티리얼 | 포토레지스트 패턴을 개선하는 방법 및 이를 이용한 반도체 소자 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE543031A (enExample) * | 1954-12-29 | |||
| JPS5849410A (ja) * | 1981-09-19 | 1983-03-23 | Sanyo Chem Ind Ltd | カチオン性高分子凝集剤 |
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| US6130303A (en) * | 1988-12-19 | 2000-10-10 | Cytec Technology Corp. | Water-soluble, highly branched polymeric microparticles |
| DE69125634T2 (de) | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
| US5321110A (en) * | 1992-06-29 | 1994-06-14 | Isp Investments Inc. | Cationic polymer compositions |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| TW329539B (en) | 1996-07-05 | 1998-04-11 | Mitsubishi Electric Corp | The semiconductor device and its manufacturing method |
| US6808859B1 (en) | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
| US5863707A (en) | 1997-02-11 | 1999-01-26 | Advanced Micro Devices, Inc. | Method for producing ultra-fine interconnection features |
| US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| US6790587B1 (en) | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
| US6207778B1 (en) * | 1999-05-07 | 2001-03-27 | Isp Investments Inc. | Conditioning/styling terpolymers |
| WO2001098834A1 (en) | 2000-06-21 | 2001-12-27 | Asahi Glass Company, Limited | Resist composition |
| US6447980B1 (en) | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
| KR100776551B1 (ko) | 2001-02-09 | 2007-11-16 | 아사히 가라스 가부시키가이샤 | 레지스트 조성물 |
| US6723488B2 (en) | 2001-11-07 | 2004-04-20 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep UV radiation containing an additive |
| US6916594B2 (en) | 2002-12-30 | 2005-07-12 | Hynix Semiconductor Inc. | Overcoating composition for photoresist and method for forming photoresist pattern using the same |
| WO2007141199A2 (de) | 2006-06-09 | 2007-12-13 | Basf Se | Verfahren zum schutz metallischer oberflächen vor korrosion durch fluide medien unter verwendung von ethylen und aminogruppen umfassenden copolymeren |
| US7745007B2 (en) | 2006-10-31 | 2010-06-29 | S.D. Warren Company | Release sheets and methods of making the same |
| US7923200B2 (en) | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
| US8715918B2 (en) | 2007-09-25 | 2014-05-06 | Az Electronic Materials Usa Corp. | Thick film resists |
| US7521094B1 (en) | 2008-01-14 | 2009-04-21 | International Business Machines Corporation | Method of forming polymer features by directed self-assembly of block copolymers |
| US7745077B2 (en) | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| AR079232A1 (es) * | 2009-12-01 | 2012-01-04 | Lubrizol Advanced Mat Inc | Polimeros multiproposito estables hidroliticamente |
| US8309278B2 (en) | 2010-07-07 | 2012-11-13 | Massachusetts Institute Of Technology | Guided self-assembly of block copolymer line structures for integrated circuit interconnects |
| US8691925B2 (en) | 2011-09-23 | 2014-04-08 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions of neutral layer for directed self assembly block copolymers and processes thereof |
-
2013
- 2013-05-17 US US13/896,936 patent/US9291909B2/en not_active Expired - Fee Related
-
2014
- 2014-05-15 EP EP14729600.8A patent/EP2997058A1/en not_active Withdrawn
- 2014-05-15 WO PCT/EP2014/059999 patent/WO2014184308A1/en not_active Ceased
- 2014-05-15 JP JP2016513365A patent/JP6342993B2/ja not_active Expired - Fee Related
- 2014-05-15 KR KR1020157032739A patent/KR20160011183A/ko not_active Abandoned
- 2014-05-15 SG SG11201506923PA patent/SG11201506923PA/en unknown
- 2014-05-15 CN CN201480024795.8A patent/CN105164172B/zh not_active Expired - Fee Related
- 2014-05-16 TW TW103117401A patent/TWI617890B/zh not_active IP Right Cessation
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