CN105164172B - 包含聚合热酸发生剂的组合物及其方法 - Google Patents

包含聚合热酸发生剂的组合物及其方法 Download PDF

Info

Publication number
CN105164172B
CN105164172B CN201480024795.8A CN201480024795A CN105164172B CN 105164172 B CN105164172 B CN 105164172B CN 201480024795 A CN201480024795 A CN 201480024795A CN 105164172 B CN105164172 B CN 105164172B
Authority
CN
China
Prior art keywords
polymer
alkylene
methacrylates
acrylates
photoresist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201480024795.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN105164172A (zh
Inventor
吴恒鹏
洪圣恩
曹毅
殷建
M·鲍内斯库
M·迪亚加拉詹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Luxembourg SARL
Original Assignee
AZ Electronic Materials Luxembourg SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Luxembourg SARL filed Critical AZ Electronic Materials Luxembourg SARL
Publication of CN105164172A publication Critical patent/CN105164172A/zh
Application granted granted Critical
Publication of CN105164172B publication Critical patent/CN105164172B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/06—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
    • C08F226/10—N-Vinyl-pyrrolidone
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/44—Preparation of metal salts or ammonium salts
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • C09D139/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C09D139/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00—Properties
    • C08L2201/54—Aqueous solutions or dispersions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201480024795.8A 2013-05-17 2014-05-15 包含聚合热酸发生剂的组合物及其方法 Expired - Fee Related CN105164172B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/896,936 2013-05-17
US13/896,936 US9291909B2 (en) 2013-05-17 2013-05-17 Composition comprising a polymeric thermal acid generator and processes thereof
PCT/EP2014/059999 WO2014184308A1 (en) 2013-05-17 2014-05-15 A composition comprising a polymeric thermal acid generator and processes thereof

Publications (2)

Publication Number Publication Date
CN105164172A CN105164172A (zh) 2015-12-16
CN105164172B true CN105164172B (zh) 2018-07-10

Family

ID=50933134

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480024795.8A Expired - Fee Related CN105164172B (zh) 2013-05-17 2014-05-15 包含聚合热酸发生剂的组合物及其方法

Country Status (8)

Country Link
US (1) US9291909B2 (enExample)
EP (1) EP2997058A1 (enExample)
JP (1) JP6342993B2 (enExample)
KR (1) KR20160011183A (enExample)
CN (1) CN105164172B (enExample)
SG (1) SG11201506923PA (enExample)
TW (1) TWI617890B (enExample)
WO (1) WO2014184308A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9530662B2 (en) * 2015-02-25 2016-12-27 GlobalFoundries, Inc. Methods for fabricating integrated circuits using directed self-assembly including a substantially periodic array of topographical features that includes etch resistant topographical features for transferability control
CN108012561B (zh) * 2015-06-22 2022-03-04 英特尔公司 用于后端工艺(beol)互连件的借助使用自底向上交联的电介质的图像色调反转
US9530663B1 (en) * 2015-06-23 2016-12-27 Nanya Technology Corp. Method for forming a pattern
US9574104B1 (en) 2015-10-16 2017-02-21 Az Electronic Materials (Luxembourg) S.A.R.L. Compositions and processes for self-assembly of block copolymers
JP2017157632A (ja) * 2016-02-29 2017-09-07 東芝メモリ株式会社 半導体装置の製造方法及びパターン形成方法
US9869933B2 (en) * 2016-03-07 2018-01-16 Rohm And Haas Electronic Materials Llc Pattern trimming methods
US9910355B2 (en) * 2016-07-29 2018-03-06 Rohm And Haas Electronic Materials Llc Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom
JP6757618B2 (ja) * 2016-08-01 2020-09-23 東京応化工業株式会社 レジストパターン厚肉化用ポリマー組成物、及びレジストパターン形成方法
JP6757623B2 (ja) * 2016-08-10 2020-09-23 東京応化工業株式会社 レジストパターン厚肉化用ポリマー組成物、及びレジストパターン形成方法
SG10202110494QA (en) 2016-08-18 2021-11-29 Ridgefield Acquisition Polymer compositions for self-assembly applications
SG10202108825RA (en) 2016-12-21 2021-09-29 Ridgefield Acquisition Novel compositions and processes for self-assembly of block copolymers
WO2018131495A1 (ja) * 2017-01-10 2018-07-19 Jsr株式会社 カバー膜形成方法、基材の処理方法及び組成物
US10691023B2 (en) * 2017-08-24 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for performing lithography process with post treatment
FR3075774B1 (fr) * 2017-12-21 2021-07-30 Commissariat Energie Atomique Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie
WO2019131953A1 (ja) * 2017-12-27 2019-07-04 Jsr株式会社 パターン形成方法及び感放射線性組成物
JP7554539B2 (ja) * 2019-09-19 2024-09-20 東京エレクトロン株式会社 狭小トレンチを形成する方法
US11682559B2 (en) 2020-06-11 2023-06-20 Tokyo Electron Limited Method to form narrow slot contacts
US11747733B2 (en) * 2021-01-08 2023-09-05 Tokyo Electron Limited Freeze-less methods for self-aligned double patterning
US20220291586A1 (en) * 2021-03-10 2022-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Underlayer composition and method of manufacturing a semiconductor device
CN113835296A (zh) * 2021-09-28 2021-12-24 之江实验室 一种飞秒激光直写光刻胶组合物
KR102845195B1 (ko) * 2024-09-03 2025-08-13 유한회사 디씨티머티리얼 포토레지스트 패턴을 개선하는 방법 및 이를 이용한 반도체 소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2839401A (en) * 1954-12-29 1958-06-17 Du Pont Photographic silver halide emulsions containing copolymeric mordants
JPS5849410A (ja) * 1981-09-19 1983-03-23 Sanyo Chem Ind Ltd カチオン性高分子凝集剤
US5321110A (en) * 1992-06-29 1994-06-14 Isp Investments Inc. Cationic polymer compositions
CN1350558A (zh) * 1999-05-07 2002-05-22 Isp投资有限公司 护理和定型的三元共聚物

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US6130303A (en) * 1988-12-19 2000-10-10 Cytec Technology Corp. Water-soluble, highly branched polymeric microparticles
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
TW329539B (en) 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US5863707A (en) 1997-02-11 1999-01-26 Advanced Micro Devices, Inc. Method for producing ultra-fine interconnection features
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
EP1302813A4 (en) 2000-06-21 2005-02-23 Asahi Glass Co Ltd RESIST COMPOSITION
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
EP1365290B1 (en) 2001-02-09 2007-11-21 Asahi Glass Company Ltd. Resist composition
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US6916594B2 (en) 2002-12-30 2005-07-12 Hynix Semiconductor Inc. Overcoating composition for photoresist and method for forming photoresist pattern using the same
WO2007141199A2 (de) 2006-06-09 2007-12-13 Basf Se Verfahren zum schutz metallischer oberflächen vor korrosion durch fluide medien unter verwendung von ethylen und aminogruppen umfassenden copolymeren
US7745007B2 (en) 2006-10-31 2010-06-29 S.D. Warren Company Release sheets and methods of making the same
US7923200B2 (en) 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
US8715918B2 (en) 2007-09-25 2014-05-06 Az Electronic Materials Usa Corp. Thick film resists
US7521094B1 (en) 2008-01-14 2009-04-21 International Business Machines Corporation Method of forming polymer features by directed self-assembly of block copolymers
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
AR079232A1 (es) * 2009-12-01 2012-01-04 Lubrizol Advanced Mat Inc Polimeros multiproposito estables hidroliticamente
US8309278B2 (en) 2010-07-07 2012-11-13 Massachusetts Institute Of Technology Guided self-assembly of block copolymer line structures for integrated circuit interconnects
US8691925B2 (en) 2011-09-23 2014-04-08 Az Electronic Materials (Luxembourg) S.A.R.L. Compositions of neutral layer for directed self assembly block copolymers and processes thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2839401A (en) * 1954-12-29 1958-06-17 Du Pont Photographic silver halide emulsions containing copolymeric mordants
JPS5849410A (ja) * 1981-09-19 1983-03-23 Sanyo Chem Ind Ltd カチオン性高分子凝集剤
US5321110A (en) * 1992-06-29 1994-06-14 Isp Investments Inc. Cationic polymer compositions
CN1350558A (zh) * 1999-05-07 2002-05-22 Isp投资有限公司 护理和定型的三元共聚物

Also Published As

Publication number Publication date
WO2014184308A1 (en) 2014-11-20
SG11201506923PA (en) 2015-09-29
JP6342993B2 (ja) 2018-06-13
TW201500859A (zh) 2015-01-01
CN105164172A (zh) 2015-12-16
US9291909B2 (en) 2016-03-22
US20140342290A1 (en) 2014-11-20
EP2997058A1 (en) 2016-03-23
KR20160011183A (ko) 2016-01-29
TWI617890B (zh) 2018-03-11
JP2016526183A (ja) 2016-09-01

Similar Documents

Publication Publication Date Title
CN105164172B (zh) 包含聚合热酸发生剂的组合物及其方法
CN103797066B (zh) 用于定向自组装嵌段共聚物的中性层组合物及其方法
CN108137313B (zh) 用于嵌段共聚物自组装的组合物和方法
JP4086830B2 (ja) スピンオンａｒｃ／ハードマスク用のシリコン含有組成物
TWI515767B (zh) 使用聚矽氮烷以形成反向曝光影像之硬罩製程
JP5220418B2 (ja) シリコン含有フォトレジストの基層としての低屈折率ポリマー
US7659051B2 (en) Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer
CN101370849A (zh) 具有抗反射性和高碳含量的聚合物及含有该聚合物的硬掩模组合物以及形成图案化材料层的方法
CN103025835A (zh) 在光刻胶图案上涂覆的组合物
TWI754661B (zh) 用於自組裝應用之聚合物組合物
EP4341310B1 (en) Hydrophobic crosslinkable pinning underlayers with improved dry etch capabilities for patterning directed self-assembly of ps-b-pmma type block copolymers
JP7611785B2 (ja) 密着膜形成材料、これを用いた密着膜の形成方法、及び密着膜形成材料を用いたパターン形成方法
TWI380129B (en) High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Luxemburg L-1648 II 46 square,

Applicant after: Az Electronics Ltd.

Address before: Luxemburg Luxemburg

Applicant before: Az Electronics Ltd.

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180710

Termination date: 20200515

CF01 Termination of patent right due to non-payment of annual fee