CN108137313B - 用于嵌段共聚物自组装的组合物和方法 - Google Patents
用于嵌段共聚物自组装的组合物和方法 Download PDFInfo
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- CN108137313B CN108137313B CN201680058211.8A CN201680058211A CN108137313B CN 108137313 B CN108137313 B CN 108137313B CN 201680058211 A CN201680058211 A CN 201680058211A CN 108137313 B CN108137313 B CN 108137313B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/63—Carboxylic acid nitriles containing cyano groups and nitrogen atoms further bound to other hetero atoms, other than oxygen atoms of nitro or nitroso groups, bound to the same carbon skeleton
- C07C255/65—Carboxylic acid nitriles containing cyano groups and nitrogen atoms further bound to other hetero atoms, other than oxygen atoms of nitro or nitroso groups, bound to the same carbon skeleton with the nitrogen atoms further bound to nitrogen atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/08—Styrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F4/00—Polymerisation catalysts
- C08F4/04—Azo-compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/02—Homopolymers or copolymers of hydrocarbons
- C09D125/04—Homopolymers or copolymers of styrene
- C09D125/08—Copolymers of styrene
- C09D125/14—Copolymers of styrene with unsaturated esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/02—Homopolymers or copolymers of hydrocarbons
- C09D125/16—Homopolymers or copolymers of alkyl-substituted styrenes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/10—Homopolymers or copolymers of methacrylic acid esters
- C09D133/12—Homopolymers or copolymers of methyl methacrylate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Graft Or Block Polymers (AREA)
- Paints Or Removers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Laminated Bodies (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/885,328 | 2015-10-16 | ||
US14/885,328 US9574104B1 (en) | 2015-10-16 | 2015-10-16 | Compositions and processes for self-assembly of block copolymers |
PCT/EP2016/074614 WO2017064199A1 (en) | 2015-10-16 | 2016-10-13 | Compositions and processes for self-assembly of block copolymers |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108137313A CN108137313A (zh) | 2018-06-08 |
CN108137313B true CN108137313B (zh) | 2019-10-18 |
Family
ID=57133209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680058211.8A Active CN108137313B (zh) | 2015-10-16 | 2016-10-13 | 用于嵌段共聚物自组装的组合物和方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9574104B1 (zh) |
EP (1) | EP3362404B1 (zh) |
JP (1) | JP6788668B2 (zh) |
KR (1) | KR102398438B1 (zh) |
CN (1) | CN108137313B (zh) |
TW (1) | TWI599582B (zh) |
WO (1) | WO2017064199A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016223046A (ja) * | 2015-06-04 | 2016-12-28 | 東京応化工業株式会社 | 表面にパターンを有する繊維の製造方法 |
KR102402958B1 (ko) * | 2015-11-11 | 2022-05-27 | 삼성전자주식회사 | 반도체 장치의 패턴 형성 방법 및 반도체 장치의 제조 방법 |
JP6955176B2 (ja) * | 2016-07-06 | 2021-10-27 | Jsr株式会社 | 膜形成用組成物、膜形成方法及び自己組織化リソグラフィープロセス |
WO2018033559A1 (en) | 2016-08-18 | 2018-02-22 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Polymer compositions for self-assembly applications |
US10691019B2 (en) * | 2016-10-07 | 2020-06-23 | Jsr Corporation | Pattern-forming method and composition |
SG10202108825RA (en) | 2016-12-21 | 2021-09-29 | Ridgefield Acquisition | Novel compositions and processes for self-assembly of block copolymers |
US10734239B2 (en) * | 2017-03-01 | 2020-08-04 | Brewer Science, Inc. | High-chi block copolymers with tunable glass transition temperatures for directed self-assembly |
TWI791618B (zh) * | 2018-02-01 | 2023-02-11 | 美商布魯爾科技公司 | 微電子結構及製造形成這種微電子結構的方法 |
JP7081377B2 (ja) * | 2018-08-01 | 2022-06-07 | Jsr株式会社 | 組成物及び基板表面の修飾方法 |
US20220002575A1 (en) * | 2018-12-07 | 2022-01-06 | Merck Patent Gmbh | Rapid cross-linkable neutral underlayers for contact hole self-assembly of polystyrene-b- poly(methyl methacrylate) diblock copolymers and their formulation thereof |
EP3772370A1 (en) * | 2019-08-05 | 2021-02-10 | Helmholtz-Zentrum Geesthacht Zentrum für Material- und Küstenforschung GmbH | Method of producing a polymeric membrane |
WO2022039082A1 (ja) * | 2020-08-17 | 2022-02-24 | Jsr株式会社 | 下層膜形成用組成物、下層膜、及び、リソグラフィープロセス |
KR20240008940A (ko) * | 2021-05-18 | 2024-01-19 | 메르크 파텐트 게엠베하 | Ps-b-pmma형 블록 공중합체의 유도 자기 조립의 패턴화를 위한 개선된 건식 에칭 능력을 가진 소수성 가교성 피닝 하층 |
WO2023099534A1 (en) | 2021-12-02 | 2023-06-08 | Merck Patent Gmbh | Neutral layer and hydrophobic pinning mat materials for use in dsa with improved substrate compatibility |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103797066A (zh) * | 2011-09-23 | 2014-05-14 | Az电子材料美国公司 | 用于定向自组装嵌段共聚物的中性层组合物及其方法 |
CN104749905A (zh) * | 2013-12-31 | 2015-07-01 | 罗门哈斯电子材料有限公司 | 定向自组装图案形成方法和组合物 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7282551B2 (en) * | 2001-02-23 | 2007-10-16 | Ems-Chemie Ag | Thermoplastic block copolymers consisting of polyalkyl(meth)acrylate and polyamide segments and the use thereof |
US20090286927A1 (en) * | 2005-06-27 | 2009-11-19 | Niels Dan Anders Sodergard | Hyperbranched Polymers |
KR100926697B1 (ko) * | 2007-06-12 | 2009-11-17 | 연세대학교 산학협력단 | 온도와 조성에 의한 부피 수축 원리를 이용한 다공성 나노구조체의 기공 크기 조절 |
US7521094B1 (en) | 2008-01-14 | 2009-04-21 | International Business Machines Corporation | Method of forming polymer features by directed self-assembly of block copolymers |
US8425982B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8114301B2 (en) * | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US7560141B1 (en) | 2008-11-11 | 2009-07-14 | International Business Machines Corporation | Method of positioning patterns from block copolymer self-assembly |
US8569427B2 (en) * | 2009-10-08 | 2013-10-29 | University Of South Carolina | Polymers derived from rosin and their methods of preparation |
US8835581B2 (en) * | 2012-06-08 | 2014-09-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Neutral layer polymer composition for directed self assembly and processes thereof |
WO2014165530A1 (en) * | 2013-04-03 | 2014-10-09 | Brewer Science Inc. | Highly etch-resistant polymer block for use in block copolymers for directed self-assembly |
US9291909B2 (en) | 2013-05-17 | 2016-03-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Composition comprising a polymeric thermal acid generator and processes thereof |
JP6558894B2 (ja) * | 2013-12-31 | 2019-08-14 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | コポリマーの設計、その製造方法およびそれを含む物品 |
US10421878B2 (en) * | 2014-01-16 | 2019-09-24 | Brewer Science, Inc. | High-Chi block copolymers for directed self-assembly |
-
2015
- 2015-10-16 US US14/885,328 patent/US9574104B1/en active Active
-
2016
- 2016-09-02 TW TW105128328A patent/TWI599582B/zh active
- 2016-10-13 KR KR1020187013963A patent/KR102398438B1/ko active IP Right Grant
- 2016-10-13 CN CN201680058211.8A patent/CN108137313B/zh active Active
- 2016-10-13 JP JP2018519469A patent/JP6788668B2/ja active Active
- 2016-10-13 EP EP16781447.4A patent/EP3362404B1/en active Active
- 2016-10-13 WO PCT/EP2016/074614 patent/WO2017064199A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103797066A (zh) * | 2011-09-23 | 2014-05-14 | Az电子材料美国公司 | 用于定向自组装嵌段共聚物的中性层组合物及其方法 |
CN104749905A (zh) * | 2013-12-31 | 2015-07-01 | 罗门哈斯电子材料有限公司 | 定向自组装图案形成方法和组合物 |
Also Published As
Publication number | Publication date |
---|---|
CN108137313A (zh) | 2018-06-08 |
EP3362404A1 (en) | 2018-08-22 |
KR102398438B1 (ko) | 2022-05-13 |
KR20180072735A (ko) | 2018-06-29 |
TWI599582B (zh) | 2017-09-21 |
US9574104B1 (en) | 2017-02-21 |
WO2017064199A1 (en) | 2017-04-20 |
JP2018538382A (ja) | 2018-12-27 |
EP3362404B1 (en) | 2021-07-28 |
JP6788668B2 (ja) | 2020-11-25 |
TW201718676A (zh) | 2017-06-01 |
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