JP2014525992A5 - - Google Patents
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- Publication number
- JP2014525992A5 JP2014525992A5 JP2014527191A JP2014527191A JP2014525992A5 JP 2014525992 A5 JP2014525992 A5 JP 2014525992A5 JP 2014527191 A JP2014527191 A JP 2014527191A JP 2014527191 A JP2014527191 A JP 2014527191A JP 2014525992 A5 JP2014525992 A5 JP 2014525992A5
- Authority
- JP
- Japan
- Prior art keywords
- coordination complex
- metal
- metal coordination
- etching
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims description 146
- 239000002184 metal Substances 0.000 claims description 146
- 238000000034 method Methods 0.000 claims description 98
- 150000004696 coordination complex Chemical class 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 72
- 238000005530 etching Methods 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 34
- 239000000243 solution Substances 0.000 claims description 32
- 230000005291 magnetic effect Effects 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 23
- 238000001035 drying Methods 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- 230000005670 electromagnetic radiation Effects 0.000 claims description 10
- 150000003839 salts Chemical class 0.000 claims description 10
- 239000003638 chemical reducing agent Substances 0.000 claims description 9
- 238000010329 laser etching Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 230000003213 activating effect Effects 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 239000004642 Polyimide Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 8
- 229920000106 Liquid crystal polymer Polymers 0.000 description 8
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- -1 i.e. Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 2
- ZEYKLMDPUOVUCR-UHFFFAOYSA-N 2-chloro-5-(trifluoromethyl)benzenesulfonyl chloride Chemical compound FC(F)(F)C1=CC=C(Cl)C(S(Cl)(=O)=O)=C1 ZEYKLMDPUOVUCR-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PLKYGPRDCKGEJH-UHFFFAOYSA-N azane;2-hydroxypropane-1,2,3-tricarboxylic acid;iron Chemical compound N.[Fe].OC(=O)CC(O)(C(O)=O)CC(O)=O PLKYGPRDCKGEJH-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- 230000005298 paramagnetic effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- VEHXKUNAGOJDJB-UHFFFAOYSA-N (4-formyl-2-methoxyphenyl) 4-methoxybenzoate Chemical compound C1=CC(OC)=CC=C1C(=O)OC1=CC=C(C=O)C=C1OC VEHXKUNAGOJDJB-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YASYEJJMZJALEJ-UHFFFAOYSA-N Citric acid monohydrate Chemical compound O.OC(=O)CC(O)(C(O)=O)CC(O)=O YASYEJJMZJALEJ-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- OJKANDGLELGDHV-UHFFFAOYSA-N disilver;dioxido(dioxo)chromium Chemical compound [Ag+].[Ag+].[O-][Cr]([O-])(=O)=O OJKANDGLELGDHV-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161525662P | 2011-08-19 | 2011-08-19 | |
| US61/525,662 | 2011-08-19 | ||
| US201161568736P | 2011-12-09 | 2011-12-09 | |
| US61/568,736 | 2011-12-09 | ||
| US13/403,797 US8784952B2 (en) | 2011-08-19 | 2012-02-23 | Method of forming a conductive image on a non-conductive surface |
| US13/403,797 | 2012-02-23 | ||
| PCT/US2012/051193 WO2013028473A1 (en) | 2011-08-19 | 2012-08-16 | Method of forming a conductive image on a non-conductive surface |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016158458A Division JP2016196708A (ja) | 2011-08-19 | 2016-08-12 | 非伝導性表面上に伝導性像を形成するための方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014525992A JP2014525992A (ja) | 2014-10-02 |
| JP2014525992A5 true JP2014525992A5 (enExample) | 2016-09-29 |
Family
ID=47711823
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014527191A Pending JP2014525992A (ja) | 2011-08-19 | 2012-08-16 | 非伝導性表面上に伝導性像を形成するための方法 |
| JP2016158458A Pending JP2016196708A (ja) | 2011-08-19 | 2016-08-12 | 非伝導性表面上に伝導性像を形成するための方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016158458A Pending JP2016196708A (ja) | 2011-08-19 | 2016-08-12 | 非伝導性表面上に伝導性像を形成するための方法 |
Country Status (24)
| Country | Link |
|---|---|
| US (3) | US8784952B2 (enExample) |
| EP (1) | EP2745658B1 (enExample) |
| JP (2) | JP2014525992A (enExample) |
| CN (1) | CN104025724B (enExample) |
| AU (2) | AU2012299226A1 (enExample) |
| BR (1) | BR112014003893A2 (enExample) |
| CA (1) | CA2845822A1 (enExample) |
| CY (1) | CY1117130T1 (enExample) |
| DK (1) | DK2745658T3 (enExample) |
| EA (1) | EA027161B1 (enExample) |
| ES (1) | ES2548415T3 (enExample) |
| HR (1) | HRP20151016T1 (enExample) |
| HU (1) | HUE028044T2 (enExample) |
| IL (1) | IL231045A0 (enExample) |
| MX (2) | MX346900B (enExample) |
| MY (1) | MY185302A (enExample) |
| PH (1) | PH12014500400A1 (enExample) |
| PL (1) | PL2745658T4 (enExample) |
| PT (1) | PT2745658E (enExample) |
| RS (1) | RS54497B1 (enExample) |
| SG (2) | SG11201400069VA (enExample) |
| SI (1) | SI2745658T1 (enExample) |
| SM (1) | SMT201500269B (enExample) |
| WO (1) | WO2013028473A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105829576A (zh) * | 2013-08-06 | 2016-08-03 | 全球第电路技术公司 | 用高速无电镀覆形成导电图像 |
| US9398703B2 (en) | 2014-05-19 | 2016-07-19 | Sierra Circuits, Inc. | Via in a printed circuit board |
| US9380700B2 (en) | 2014-05-19 | 2016-06-28 | Sierra Circuits, Inc. | Method for forming traces of a printed circuit board |
| US9706667B2 (en) | 2014-05-19 | 2017-07-11 | Sierra Circuits, Inc. | Via in a printed circuit board |
| KR101698160B1 (ko) * | 2014-09-17 | 2017-01-19 | 주식회사 엘지화학 | 도전성 패턴 형성용 조성물 및 도전성 패턴을 갖는 수지 구조체 |
| US10677837B2 (en) | 2016-06-01 | 2020-06-09 | Kyzen Corporation | System and method for electrical circuit monitoring |
| CN105451456A (zh) * | 2015-12-08 | 2016-03-30 | 昆山联滔电子有限公司 | 非导电基材的导体线路的制造方法 |
| GB201600214D0 (en) * | 2016-01-06 | 2016-02-17 | Univ Coventry | Material deposition in a magnetic field |
| US10849233B2 (en) | 2017-07-10 | 2020-11-24 | Catlam, Llc | Process for forming traces on a catalytic laminate |
| US10349520B2 (en) | 2017-06-28 | 2019-07-09 | Catlam, Llc | Multi-layer circuit board using interposer layer and conductive paste |
| US10765012B2 (en) | 2017-07-10 | 2020-09-01 | Catlam, Llc | Process for printed circuit boards using backing foil |
| US10827624B2 (en) | 2018-03-05 | 2020-11-03 | Catlam, Llc | Catalytic laminate with conductive traces formed during lamination |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE2930784A1 (de) * | 1979-07-28 | 1981-02-12 | Licentia Gmbh | Verfahren zur aktivierung von kunststoffoberflaechen |
| JPS5917223A (ja) * | 1982-07-20 | 1984-01-28 | Nec Corp | 磁気記録媒体の製造方法 |
| JPS5917225A (ja) * | 1982-07-20 | 1984-01-28 | Nec Corp | 磁気記録媒体の製造方法 |
| JPS6147695A (ja) * | 1984-08-15 | 1986-03-08 | 株式会社日立製作所 | 部分めつき，エツチング方法 |
| US4900618A (en) * | 1986-11-07 | 1990-02-13 | Monsanto Company | Oxidation-resistant metal coatings |
| US5506091A (en) * | 1990-04-20 | 1996-04-09 | Nisshinbo Industries, Inc. | Photosensitive resin composition and method of forming conductive pattern |
| RU2039128C1 (ru) * | 1990-07-30 | 1995-07-09 | Институт общей и неорганической химии АН Украины | Способ химического никелирования |
| US5336370A (en) * | 1993-12-09 | 1994-08-09 | Chipalkatti Makarand H | Pre-treatment for plating technique |
| JP3916023B2 (ja) * | 1998-06-26 | 2007-05-16 | 株式会社エフオーアイ | 鍍金システム |
| EP1062850B1 (de) * | 1998-12-10 | 2007-05-30 | LPKF Laser & Electronics Aktiengesellschaft | Verfahren zur herstellung von leiterbahnstrukturen |
| JP2001089673A (ja) * | 1999-09-27 | 2001-04-03 | Hideo Kakigi | 高分子成形物およびその製造方法 |
| US7622024B1 (en) * | 2000-05-10 | 2009-11-24 | Novellus Systems, Inc. | High resistance ionic current source |
| US20050018595A1 (en) * | 2001-06-06 | 2005-01-27 | Spectra Systems Corporation | System for applying markings to optical media |
| US6838352B1 (en) * | 2002-07-05 | 2005-01-04 | Newport Fab, Llc. | Damascene trench capacitor for mixed-signal/RF IC applications |
| DE10255520B4 (de) * | 2002-11-28 | 2007-12-27 | Infineon Technologies Ag | Verfahren zur elektrischen Kontaktierung mittels gefüllter Flüssigkeiten und elektronische Bauteile mit derartiger Kontaktierung |
| KR101038494B1 (ko) * | 2004-12-28 | 2011-06-01 | 삼성테크윈 주식회사 | Ｒｆｉｄ 태그용 안테나 제조 방법 |
| US7867570B2 (en) * | 2006-10-26 | 2011-01-11 | Basf Coatings Gmbh | Method of producing a coating having metal coordinating and film-forming materials |
| US20080116077A1 (en) * | 2006-11-21 | 2008-05-22 | M/A-Com, Inc. | System and method for solder bump plating |
| JP5448524B2 (ja) * | 2008-04-23 | 2014-03-19 | 富士フイルム株式会社 | めっき用積層フィルム、表面金属膜材料の作製方法及び表面金属膜材料 |
| US20090269510A1 (en) * | 2008-04-25 | 2009-10-29 | Daniel Lieberman | Printed electronics by metal plating through uv light |
| KR20100009752A (ko) * | 2008-07-21 | 2010-01-29 | 삼성전자주식회사 | 자기장을 이용한 무전해 도금 장치 및 방법 |
| JP2010106316A (ja) * | 2008-10-30 | 2010-05-13 | Du Pont Toray Co Ltd | 導電性繊維の製造方法 |
| JP2011124523A (ja) * | 2010-02-02 | 2011-06-23 | Napura:Kk | 電子デバイス用基板、電子デバイス用積層体、電子デバイス及びそれらの製造方法 |
-
2012
- 2012-02-23 US US13/403,797 patent/US8784952B2/en active Active - Reinstated
- 2012-08-16 PH PH1/2014/500400A patent/PH12014500400A1/en unknown
- 2012-08-16 DK DK12790696.4T patent/DK2745658T3/en active
- 2012-08-16 EP EP12790696.4A patent/EP2745658B1/en active Active
- 2012-08-16 PL PL12790696T patent/PL2745658T4/pl unknown
- 2012-08-16 EA EA201490479A patent/EA027161B1/ru not_active IP Right Cessation
- 2012-08-16 MY MYPI2014000437A patent/MY185302A/en unknown
- 2012-08-16 ES ES12790696.4T patent/ES2548415T3/es active Active
- 2012-08-16 PT PT127906964T patent/PT2745658E/pt unknown
- 2012-08-16 BR BR112014003893A patent/BR112014003893A2/pt not_active Application Discontinuation
- 2012-08-16 MX MX2015007418A patent/MX346900B/es unknown
- 2012-08-16 MX MX2014001980A patent/MX2014001980A/es active IP Right Grant
- 2012-08-16 AU AU2012299226A patent/AU2012299226A1/en not_active Abandoned
- 2012-08-16 US US13/587,785 patent/US8784953B2/en active Active - Reinstated
- 2012-08-16 CN CN201280051161.2A patent/CN104025724B/zh not_active Expired - Fee Related
- 2012-08-16 HU HUE12790696A patent/HUE028044T2/en unknown
- 2012-08-16 JP JP2014527191A patent/JP2014525992A/ja active Pending
- 2012-08-16 CA CA2845822A patent/CA2845822A1/en not_active Abandoned
- 2012-08-16 SG SG11201400069VA patent/SG11201400069VA/en unknown
- 2012-08-16 WO PCT/US2012/051193 patent/WO2013028473A1/en not_active Ceased
- 2012-08-16 SG SG10201504593RA patent/SG10201504593RA/en unknown
- 2012-08-16 RS RS20150869A patent/RS54497B1/sr unknown
- 2012-08-16 SI SI201230313T patent/SI2745658T1/sl unknown
- 2012-08-16 HR HRP20151016TT patent/HRP20151016T1/hr unknown
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2014
- 2014-02-19 IL IL231045A patent/IL231045A0/en unknown
- 2014-06-13 US US14/304,609 patent/US20140357081A1/en not_active Abandoned
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2015
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- 2015-10-29 SM SM201500269T patent/SMT201500269B/it unknown
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2016
- 2016-08-12 JP JP2016158458A patent/JP2016196708A/ja active Pending
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2017
- 2017-02-09 AU AU2017200890A patent/AU2017200890A1/en not_active Abandoned
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