CN104025724B - 在非传导表面上形成传导图像的方法 - Google Patents

在非传导表面上形成传导图像的方法 Download PDF

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Publication number
CN104025724B
CN104025724B CN201280051161.2A CN201280051161A CN104025724B CN 104025724 B CN104025724 B CN 104025724B CN 201280051161 A CN201280051161 A CN 201280051161A CN 104025724 B CN104025724 B CN 104025724B
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China
Prior art keywords
metal
coordination complex
etching
metal coordination
substrate
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Expired - Fee Related
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CN201280051161.2A
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English (en)
Chinese (zh)
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CN104025724A (zh
Inventor
W.维斯曼
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Additive Circuit Technology Co Ltd
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Whole World First Circuit Engineering Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1664—Process features with additional means during the plating process
    • C23C18/1673—Magnetic field
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/22—Roughening, e.g. by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/104—Using magnetic force, e.g. to align particles or for a temporary connection during processing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1157—Using means for chemical reduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electroplating Methods And Accessories (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrostatic Charge, Transfer And Separation In Electrography (AREA)
CN201280051161.2A 2011-08-19 2012-08-16 在非传导表面上形成传导图像的方法 Expired - Fee Related CN104025724B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201161525662P 2011-08-19 2011-08-19
US61/525662 2011-08-19
US201161568736P 2011-12-09 2011-12-09
US61/568736 2011-12-09
US13/403,797 US8784952B2 (en) 2011-08-19 2012-02-23 Method of forming a conductive image on a non-conductive surface
US13/403797 2012-02-23
PCT/US2012/051193 WO2013028473A1 (en) 2011-08-19 2012-08-16 Method of forming a conductive image on a non-conductive surface

Publications (2)

Publication Number Publication Date
CN104025724A CN104025724A (zh) 2014-09-03
CN104025724B true CN104025724B (zh) 2017-09-26

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CN201280051161.2A Expired - Fee Related CN104025724B (zh) 2011-08-19 2012-08-16 在非传导表面上形成传导图像的方法

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Country Link
US (3) US8784952B2 (enExample)
EP (1) EP2745658B1 (enExample)
JP (2) JP2014525992A (enExample)
CN (1) CN104025724B (enExample)
AU (2) AU2012299226A1 (enExample)
BR (1) BR112014003893A2 (enExample)
CA (1) CA2845822A1 (enExample)
CY (1) CY1117130T1 (enExample)
DK (1) DK2745658T3 (enExample)
EA (1) EA027161B1 (enExample)
ES (1) ES2548415T3 (enExample)
HR (1) HRP20151016T1 (enExample)
HU (1) HUE028044T2 (enExample)
IL (1) IL231045A0 (enExample)
MX (2) MX346900B (enExample)
MY (1) MY185302A (enExample)
PH (1) PH12014500400A1 (enExample)
PL (1) PL2745658T4 (enExample)
PT (1) PT2745658E (enExample)
RS (1) RS54497B1 (enExample)
SG (2) SG11201400069VA (enExample)
SI (1) SI2745658T1 (enExample)
SM (1) SMT201500269B (enExample)
WO (1) WO2013028473A1 (enExample)

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CN105829576A (zh) * 2013-08-06 2016-08-03 全球第电路技术公司 用高速无电镀覆形成导电图像
US9398703B2 (en) 2014-05-19 2016-07-19 Sierra Circuits, Inc. Via in a printed circuit board
US9380700B2 (en) 2014-05-19 2016-06-28 Sierra Circuits, Inc. Method for forming traces of a printed circuit board
US9706667B2 (en) 2014-05-19 2017-07-11 Sierra Circuits, Inc. Via in a printed circuit board
KR101698160B1 (ko) * 2014-09-17 2017-01-19 주식회사 엘지화학 도전성 패턴 형성용 조성물 및 도전성 패턴을 갖는 수지 구조체
US10677837B2 (en) 2016-06-01 2020-06-09 Kyzen Corporation System and method for electrical circuit monitoring
CN105451456A (zh) * 2015-12-08 2016-03-30 昆山联滔电子有限公司 非导电基材的导体线路的制造方法
GB201600214D0 (en) * 2016-01-06 2016-02-17 Univ Coventry Material deposition in a magnetic field
US10849233B2 (en) 2017-07-10 2020-11-24 Catlam, Llc Process for forming traces on a catalytic laminate
US10349520B2 (en) 2017-06-28 2019-07-09 Catlam, Llc Multi-layer circuit board using interposer layer and conductive paste
US10765012B2 (en) 2017-07-10 2020-09-01 Catlam, Llc Process for printed circuit boards using backing foil
US10827624B2 (en) 2018-03-05 2020-11-03 Catlam, Llc Catalytic laminate with conductive traces formed during lamination

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RU2039128C1 (ru) * 1990-07-30 1995-07-09 Институт общей и неорганической химии АН Украины Способ химического никелирования
US5506091A (en) * 1990-04-20 1996-04-09 Nisshinbo Industries, Inc. Photosensitive resin composition and method of forming conductive pattern
JP2001089673A (ja) * 1999-09-27 2001-04-03 Hideo Kakigi 高分子成形物およびその製造方法
CN1294639A (zh) * 1998-12-10 2001-05-09 格哈德·瑙恩多夫 线路结构的生产方法

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US5506091A (en) * 1990-04-20 1996-04-09 Nisshinbo Industries, Inc. Photosensitive resin composition and method of forming conductive pattern
RU2039128C1 (ru) * 1990-07-30 1995-07-09 Институт общей и неорганической химии АН Украины Способ химического никелирования
US5336370A (en) * 1993-12-09 1994-08-09 Chipalkatti Makarand H Pre-treatment for plating technique
CN1294639A (zh) * 1998-12-10 2001-05-09 格哈德·瑙恩多夫 线路结构的生产方法
JP2001089673A (ja) * 1999-09-27 2001-04-03 Hideo Kakigi 高分子成形物およびその製造方法

Also Published As

Publication number Publication date
WO2013028473A1 (en) 2013-02-28
ES2548415T3 (es) 2015-10-16
HUE028044T2 (en) 2016-11-28
US20140357081A1 (en) 2014-12-04
HRP20151016T1 (hr) 2015-12-04
PH12014500400A1 (en) 2014-04-14
SMT201500269B (it) 2016-01-08
US8784952B2 (en) 2014-07-22
NZ716340A (en) 2016-10-28
JP2016196708A (ja) 2016-11-24
SG10201504593RA (en) 2015-07-30
AU2012299226A1 (en) 2014-04-03
RS54497B1 (sr) 2016-06-30
CA2845822A1 (en) 2013-02-28
IL231045A0 (en) 2014-03-31
PL2745658T3 (pl) 2016-02-29
MX346900B (es) 2017-04-04
EP2745658A1 (en) 2014-06-25
NZ622408A (en) 2016-03-31
JP2014525992A (ja) 2014-10-02
PT2745658E (pt) 2015-10-27
DK2745658T3 (en) 2015-10-12
PL2745658T4 (pl) 2016-03-31
AU2017200890A1 (en) 2017-03-02
EA027161B1 (ru) 2017-06-30
MX2014001980A (es) 2014-05-14
SI2745658T1 (sl) 2015-12-31
CY1117130T1 (el) 2017-04-05
EP2745658B1 (en) 2015-06-24
SG11201400069VA (en) 2014-04-28
US20130043603A1 (en) 2013-02-21
US20130043062A1 (en) 2013-02-21
BR112014003893A2 (pt) 2017-03-14
CN104025724A (zh) 2014-09-03
MY185302A (en) 2021-04-30
EA201490479A1 (ru) 2014-07-30
US8784953B2 (en) 2014-07-22

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