JP2014522545A5 - - Google Patents
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- Publication number
- JP2014522545A5 JP2014522545A5 JP2014503034A JP2014503034A JP2014522545A5 JP 2014522545 A5 JP2014522545 A5 JP 2014522545A5 JP 2014503034 A JP2014503034 A JP 2014503034A JP 2014503034 A JP2014503034 A JP 2014503034A JP 2014522545 A5 JP2014522545 A5 JP 2014522545A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- etching
- medium
- printable
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- -1 phosphoric acid compound Chemical class 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 235000011054 acetic acid Nutrition 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 150000001991 dicarboxylic acids Chemical class 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 150000007524 organic acids Chemical class 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000002923 metal particle Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 229910019142 PO4 Inorganic materials 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 150000007513 acids Chemical class 0.000 claims 2
- 239000003513 alkali Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 2
- 239000010452 phosphate Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000008719 thickening Effects 0.000 claims 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011016335A DE102011016335B4 (de) | 2011-04-07 | 2011-04-07 | Nickelhaltige und ätzende druckbare Paste sowie Verfahren zur Bildung von elektrischen Kontakten beim Herstellen einer Solarzelle |
| DE102011016335.2 | 2011-04-07 | ||
| PCT/EP2012/001608 WO2012136387A2 (de) | 2011-04-07 | 2012-04-05 | Metallpartikelhaltiges und ätzendes druckbares medium insbesondere zur kontaktbildung mit silizium beim herstellen einer solarzelle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014522545A JP2014522545A (ja) | 2014-09-04 |
| JP2014522545A5 true JP2014522545A5 (enExample) | 2016-03-17 |
Family
ID=46025597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014503034A Pending JP2014522545A (ja) | 2011-04-07 | 2012-04-05 | 印刷可能な媒体で金属粒子を含みかつエッチングをもたらし、より具体的には太陽電池の生産中にシリコンと接点を作り出す、印刷可能な媒体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140021472A1 (enExample) |
| JP (1) | JP2014522545A (enExample) |
| KR (1) | KR20140038954A (enExample) |
| CN (1) | CN103493146A (enExample) |
| DE (1) | DE102011016335B4 (enExample) |
| WO (1) | WO2012136387A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012213077A1 (de) * | 2012-07-25 | 2014-01-30 | Robert Bosch Gmbh | Verfahren zum Kontaktieren eines Halbleitermaterials mit einer Kontaktlage |
| KR101614186B1 (ko) * | 2013-05-20 | 2016-04-20 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| CN104241402A (zh) * | 2013-06-20 | 2014-12-24 | 晶科能源有限公司 | 太阳能电池减反射膜及其制备方法 |
| JP6425927B2 (ja) * | 2014-07-03 | 2018-11-21 | 国立研究開発法人産業技術総合研究所 | シリコン窒化膜用エッチング剤、エッチング方法 |
| DE102014221584B4 (de) * | 2014-10-23 | 2018-10-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektrochemisches Sintern von Metallpartikelschichten |
| WO2016144359A1 (en) | 2015-03-12 | 2016-09-15 | Hewlett-Packard Development Company, L.P. | Printhead structure |
| CN106373792B (zh) * | 2016-08-30 | 2021-06-08 | 南通万德科技有限公司 | 一种高分子材料和金属的复合材料及其制备工艺 |
| KR102600380B1 (ko) * | 2018-12-05 | 2023-11-09 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법, 그리고 태양 전지 패널 |
| KR102212224B1 (ko) * | 2019-09-11 | 2021-02-04 | 울산과학기술원 | 다공성 강유전체 박막을 포함하는 광전소자 및 이의 제조방법 |
| CN119630123A (zh) * | 2024-11-22 | 2025-03-14 | 隆基绿能科技股份有限公司 | 太阳能电池片、太阳能电池片的制备方法及光伏组件 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4183136A (en) * | 1977-08-03 | 1980-01-15 | Johnson Controls, Inc. | Temperature sensing resistance device |
| US4968354A (en) * | 1987-11-09 | 1990-11-06 | Fuji Electric Co., Ltd. | Thin film solar cell array |
| DE69121449T2 (de) * | 1990-04-12 | 1997-02-27 | Matsushita Electric Ind Co Ltd | Leitende Tintenzusammensetzung und Verfahren zum Herstellen eines dickschichtigen Musters |
| JP3254044B2 (ja) * | 1993-06-16 | 2002-02-04 | ナミックス株式会社 | 太陽電池用電極 |
| WO1995005008A2 (de) * | 1993-07-29 | 1995-02-16 | Gerhard Willeke | Flaches bauelement mit einem gitternetz von durchgangslöchern |
| JPH08279649A (ja) * | 1995-04-05 | 1996-10-22 | Mitsubishi Electric Corp | 半導体レーザの製造方法，及び半導体レーザ |
| JP3889271B2 (ja) * | 2000-12-15 | 2007-03-07 | 株式会社東芝 | 半導体装置の製造方法 |
| DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
| EP1378948A1 (en) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
| JP4549655B2 (ja) * | 2003-11-18 | 2010-09-22 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 機能性塗料 |
| JP4761714B2 (ja) * | 2004-01-29 | 2011-08-31 | 京セラ株式会社 | 太陽電池およびこれを用いた太陽電池モジュール |
| JP3853793B2 (ja) * | 2004-02-27 | 2006-12-06 | 京セラケミカル株式会社 | 太陽電池用導電性ペースト、太陽電池及び太陽電池の製造方法 |
| JP4799881B2 (ja) * | 2004-12-27 | 2011-10-26 | 三井金属鉱業株式会社 | 導電性インク |
| DE102005007743A1 (de) * | 2005-01-11 | 2006-07-20 | Merck Patent Gmbh | Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten |
| CN101098833A (zh) * | 2005-01-11 | 2008-01-02 | 默克专利股份有限公司 | 用于二氧化硅和氮化硅层的蚀刻的可印刷介质 |
| DE102005033724A1 (de) * | 2005-07-15 | 2007-01-18 | Merck Patent Gmbh | Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten |
| JP2007146117A (ja) * | 2005-11-04 | 2007-06-14 | Mitsui Mining & Smelting Co Ltd | ニッケルインク及びそのニッケルインクで形成した導体膜 |
| DE102006030822A1 (de) * | 2006-06-30 | 2008-01-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer metallischen Kontaktstruktur einer Solarzelle |
| WO2009067483A1 (en) * | 2007-11-19 | 2009-05-28 | Applied Materials, Inc. | Solar cell contact formation process using a patterned etchant material |
| US8101231B2 (en) * | 2007-12-07 | 2012-01-24 | Cabot Corporation | Processes for forming photovoltaic conductive features from multiple inks |
| US7820540B2 (en) * | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
| US8506849B2 (en) * | 2008-03-05 | 2013-08-13 | Applied Nanotech Holdings, Inc. | Additives and modifiers for solvent- and water-based metallic conductive inks |
| TWI470041B (zh) * | 2008-06-09 | 2015-01-21 | Basf Se | 用於施加金屬層之分散液 |
| DE102009009840A1 (de) * | 2008-10-31 | 2010-05-27 | Bosch Solar Energy Ag | Verfahren, Vorrichtung und Drucksubstanz zur Herstellung einer metallischen Kontaktstruktur |
| JP2012508812A (ja) * | 2008-11-14 | 2012-04-12 | アプライド・ナノテック・ホールディングス・インコーポレーテッド | 太陽電池製造用インク及びペースト |
| DE102008037613A1 (de) * | 2008-11-28 | 2010-06-02 | Schott Solar Ag | Verfahren zur Herstellung eines Metallkontakts |
| CN101562217A (zh) * | 2009-05-22 | 2009-10-21 | 中国科学院电工研究所 | 一种太阳电池前电极制备方法 |
| JP2011060752A (ja) * | 2009-08-12 | 2011-03-24 | Nippon Kineki Kk | 導電性ペースト組成物 |
| US20120142140A1 (en) * | 2010-12-02 | 2012-06-07 | Applied Nanotech Holdings, Inc. | Nanoparticle inks for solar cells |
-
2011
- 2011-04-07 DE DE102011016335A patent/DE102011016335B4/de not_active Expired - Fee Related
-
2012
- 2012-04-05 WO PCT/EP2012/001608 patent/WO2012136387A2/de not_active Ceased
- 2012-04-05 JP JP2014503034A patent/JP2014522545A/ja active Pending
- 2012-04-05 CN CN201280017487.3A patent/CN103493146A/zh active Pending
- 2012-04-05 KR KR1020137027432A patent/KR20140038954A/ko not_active Withdrawn
- 2012-04-05 US US14/110,065 patent/US20140021472A1/en not_active Abandoned
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