WO2012043971A3 - 롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 - Google Patents
롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 Download PDFInfo
- Publication number
- WO2012043971A3 WO2012043971A3 PCT/KR2011/004694 KR2011004694W WO2012043971A3 WO 2012043971 A3 WO2012043971 A3 WO 2012043971A3 KR 2011004694 W KR2011004694 W KR 2011004694W WO 2012043971 A3 WO2012043971 A3 WO 2012043971A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electronic device
- flexible
- roll
- flexible electronic
- flexible substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 230000003746 surface roughness Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0277—Bendability or stretchability details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180046487.1A CN103299448B (zh) | 2010-09-29 | 2011-06-28 | 使用辊形状母基板的柔性电子器件的制造方法、柔性电子器件及柔性基板 |
EP11829477.6A EP2624326A4 (en) | 2010-09-29 | 2011-06-28 | Method for manufacturing a flexible electronic device using a roll-shaped motherboard, flexible electronic device, and flexible substrate |
JP2013529042A JP5899220B2 (ja) | 2010-09-29 | 2011-06-28 | ロール状の母基板を利用したフレキシブル電子素子の製造方法、フレキシブル電子素子及びフレキシブル基板 |
US13/824,461 US20130188324A1 (en) | 2010-09-29 | 2011-06-28 | Method for Manufacturing a Flexible Electronic Device Using a Roll-Shaped Motherboard, Flexible Electronic Device, and Flexible Substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100094349 | 2010-09-29 | ||
KR10-2010-0094349 | 2010-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012043971A2 WO2012043971A2 (ko) | 2012-04-05 |
WO2012043971A3 true WO2012043971A3 (ko) | 2012-05-31 |
Family
ID=45893597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/004694 WO2012043971A2 (ko) | 2010-09-29 | 2011-06-28 | 롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130188324A1 (ko) |
EP (1) | EP2624326A4 (ko) |
JP (1) | JP5899220B2 (ko) |
KR (1) | KR101262551B1 (ko) |
CN (1) | CN103299448B (ko) |
WO (1) | WO2012043971A2 (ko) |
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- 2011-06-28 EP EP11829477.6A patent/EP2624326A4/en not_active Withdrawn
- 2011-09-29 KR KR1020110098980A patent/KR101262551B1/ko active IP Right Grant
Patent Citations (5)
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KR20000054212A (ko) * | 2000-05-26 | 2000-09-05 | 조성민 | 유기발광소자 제조용 박막 증착장치 |
JP2006236626A (ja) * | 2005-02-22 | 2006-09-07 | Shinshu Univ | 電極層付き可撓性樹脂フィルムの製造方法 |
KR20080065210A (ko) * | 2007-01-08 | 2008-07-11 | 포항공과대학교 산학협력단 | 플렉서블 소자의 제조 방법 및 플렉서블 표시 장치의 제조방법 |
KR20090102065A (ko) * | 2008-03-25 | 2009-09-30 | 삼성모바일디스플레이주식회사 | 플렉서블 디스플레이 및 그 제조 방법 |
JP2009258758A (ja) * | 2009-08-04 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法及び電子書籍の作製方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5899220B2 (ja) | 2016-04-06 |
WO2012043971A2 (ko) | 2012-04-05 |
CN103299448A (zh) | 2013-09-11 |
KR101262551B1 (ko) | 2013-05-09 |
KR20120033284A (ko) | 2012-04-06 |
US20130188324A1 (en) | 2013-07-25 |
JP2014501018A (ja) | 2014-01-16 |
CN103299448B (zh) | 2016-09-07 |
EP2624326A4 (en) | 2017-05-10 |
EP2624326A2 (en) | 2013-08-07 |
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