Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/02—Printing inks
  • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
  • C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/02—Printing inks
  • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
  • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D11/00—Inks
  • C09D11/52—Electrically conductive inks
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K13/00—Etching, surface-brightening or pickling compositions
  • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K13/00—Etching, surface-brightening or pickling compositions
  • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
  • H01B1/20—Conductive material dispersed in non-conductive organic material
  • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F10/00—Individual photovoltaic cells, e.g. solar cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/206—Electrodes for devices having potential barriers
  • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/01—Manufacture or treatment
  • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
  • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
  • H10H20/0145—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials comprising polycrystalline, amorphous or porous Group IV materials
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• Metal particle-containing and corrosive printable medium in particular for contact formation with
• the present invention relates to a printable medium which can be used in particular for the formation of metal contacts on silicon solar cells.
• the invention further relates to a method for producing silicon solar cells and a correspondingly producible solar cell.
• Silicon substrates made, with metal contacts on the surfaces of a
• Silicon substrates are usually formed by printing processes such as screen printing. Conventionally, in particular metal contacts on a front of the substrate
• Silicon substrates formed using a printable paste are examples of materials.
• Silver particles, glass frit and inorganic solvents which is printed in the form of a grid with elongated narrow contact fingers on the substrate surface.
• the paste After the paste has dried, it is typically in a so-called Fire step at temperatures above 700 to 800 ° C driven into the substrate surface. If, prior to the application of the printable paste on the substrate surface, a dielectric layer was deposited, for example, as an antireflection layer and / or passivation layer, the glass frit contained in the paste can serve to protect the
• Silver particles can make an electrically conductive contact with the underlying silicon, in particular with an emitter formed on the front side surface of the substrate.
• a printable medium in particular in the form of a printable paste, is proposed, which is suitable both for the etching-open of a passivation layer and for the electrically conductive contacting of a silicon substrate adjacent to the passivation layer.
• Passivation layer may in this case comprise one or more dielectrics and / or amorphous silicon.
• the printable medium contains both a medium chemically etching the passivation layer and metal particles, in particular nickel particles and / or titanium particles.
• the printable medium is essentially free of glass frits.
• the first aspect of the invention relates to a printable medium which, due to its viscous properties, can be applied to a substrate by means of various printing methods.
• a printing process here, for example, screen printing process, ink jet printing process (ink-jet), pad printing process,
• Printing processes such as in particular screen printing processes, are used in the formation of metal contacts in the industrial production of solar cells, in particular because of the possible simple process control and in comparison with others
• Metallization technologies low cost preferred. For example, structures having a structure width of less than 100 ⁇ m can be printed onto a substrate by screen printing processes with the aid of comparatively simple mechanical means.
• the definition of the structures is largely freely selectable by the type of print mask to be used and the areas covered by this mask.
• Silver particles have also been observed in use of such conventional printable pastes that it is generally necessary to fire the paste into the silicon substrate through the dielectric layer at very high temperatures of greater than 700 ° C to 800 ° C to provide satisfactory electrical contact with the substrate To be able to produce silicon substrate.
• Dielectric layer can be adversely affected by the firing of the printable paste at very high temperatures.
• contact resistance between the silver particles of the printable paste and the silicon of the substrate can be relatively high and can contribute significantly to the overall series resistance through metal contacting.
• Passivation layer corrosive medium may be a chemical adapted to the material of the passivation layer, which can chemically attack and dissolve the passivation layer. It can thereby be achieved that, after dissolution of the passivation layer, the nickel particles also contained in the printable paste can come into direct mechanical contact with a surface of the silicon substrate lying below the passivation layer. At the contact points, in particular at higher temperatures of, for example, between 350 and 550 ° C nickel silicide can form. In particular, it has been observed that the formation of such a nickel silicide layer between the silicon substrate and the nickel particles of the contact structure appears to result in very little contact resistance between the nickel particles and the silicon surface. This
• Contact resistance may be about a factor of 10 lower than between silicon and silver.
• Both the localized opening of the passivation layer caused by the corrosive medium and the formation of nickel silicide can occur at process temperatures substantially less than the 700 ° to 800 ° C. used in conventional screen-printing metallization processes.
• process temperatures in the range of 200 ° C to 600 ° C may be sufficient to use the printable medium proposed herein
• the printable medium proposed herein in addition to cost reduction potential, can provide reduced contact resistance as compared to screen printing methods with conventional printable pastes, as well as the possibility of reduced process temperatures and, concomitantly, a reduced risk of degradation.
• the printable paste may be between 5 wt% and 90 wt%, preferably between 10 wt% and 80 wt%, and more preferably between 20 wt% and 70 wt% of the passivating layer corrosive medium contain.
• Such proportions by weight of the corrosive medium on the entire printable paste have proven to be advantageous for the etching properties of the printing paste. If the amount of corrosive medium is too small, problems may occur in the local opening of the passivation layer. Excessive proportions of corrosive medium can provide a sufficiently large weight fraction of
• the paste contains between 5 wt% and 90 wt%, preferably between 10 wt% and 80 wt%, more preferably between 20 wt% and 70 wt% of metal particles. Too low a weight fraction can lead to excessive series resistances in the generated metal contact structure. Excessive proportions by weight of metal particles can prevent a sufficient proportion by weight of corrosive medium.
• the metal particles may have sizes of between 20 nm and 50 ⁇ , preferably between 50 nm and 20 ⁇ . Too small particles can cause excessive oxidation or poor electrical contact. Too large particles can cause processing problems in printing.
• the nickel particles may in this case consist entirely of nickel or have a nickel compound or nickel alloy. The same applies to alternative titanium particles.
• the printable paste proposed herein is substantially free of glass frits. Under glass frits this small particles of low-melting glasses are understood, as in conventional printable pastes for the formation of
• Metal contact structures are commonly used to pass through a dielectric
• glass frit may contain metal oxides and it has been observed that metal oxides of such glass frit, in conjunction with the nickel particles contained in the proposed printing paste, may lead to the formation of nickel oxide, which may reduce the electrical conductivity of the metal structures produced observed that the necessary for melting the glass frit high process temperatures or the molten glass frit itself can cause nickel can penetrate too deep into the surface of the silicon substrate and there especially when thin emitter layers are to be contacted, too
• Short circuit problems can lead.
• the absence of glass frit and glass frit in particular, which melt at high process temperatures of, for example, more than 500 ° C, can thus help avoid short circuit problems.
• the passivation layer on which the printable paste is to be applied and which is to be opened locally with the aid of the corrosive medium may be a dielectric or a stacking sequence of a plurality of dielectric layers, for example consisting of different forms of silicon nitride (Si 3 N 4 , SiN x : H, SiN x O y ), silicon oxide (SiO, Si0 2 ), silicon carbide (SiC x ) or aluminum oxide (A1 2 0 3 ) and / or amorphous silicon (a-Si).
• the layer can be designed in such a way with structural and electrical properties, that it causes a good passivation of the adjacent surface of the silicon substrate with a low surface recombination rate.
• the passivation layer may have a thickness of between 0.5 and 500 nm, preferably between 1 and 100 nm.
• the passivation layer does not necessarily have to bring about a very good surface passivation.
• the passivation for example, as a dielectric antireflection layer or as a dielectric
• Rear reflector be designed for a solar cell in which a passivation can play a minor role.
• a passivation can play a minor role.
• Passivation layers are often formed with silicon nitride, for example Si 3 N 4 or SiN x : H.
• silicon nitride layers can be deposited for example by chemical vapor deposition (CVD) and a very good
• passivation layers can also be formed with silicon oxide, for example SiO 2 , which can be produced for example by thermal oxidation or vapor deposition.
• silicon oxide for example SiO 2
• Aluminum oxide for example Al 2 O 3
• Good surface passivation may also be provided by a thin layer of amorphous silicon (a-Si) which is intrinsic or doped
• etching media may be contained in the paste.
• the corrosive medium may in particular be adapted to completely chemically dissolve the passivation layer in a region that has been printed with the printable medium.
• the material of the passivation layer can go completely in solution with the etching medium, especially at elevated process temperatures, and thus be completely removed locally.
• conventional Screen printing pastes due to the glass frit contained therein penetrate a passivation layer locally in the form of small-area so-called spikes, but not dissolve surface.
• the corrosive medium may contain one or more forms of phosphoric acid, phosphoric acid salts and / or phosphoric acid compounds.
• Phosphoric acid salts or phosphoric acid compounds can be decomposed on heating to a corresponding phosphoric acid, which then the adjacent
• Passivation layer can open corrosive.
• the corrosive medium may also be adapted to the passivation layer to be etched
• inorganic mineral acids such as hydrochloric acid, sulfuric acid or nitric acid.
• organic acids having, for example, an alkyl group having 1 to 10 carbon atoms selected from the group of the alkylcarboxylic acids, the hydroxycarboxylic acids and the dicarboxylic acids may be contained in the etching medium. Examples of these are formic acid, acetic acid, lactic acid and oxalic acid.
• corrosive alkaline compounds which may include, for example, potassium hydroxide (KOH) or sodium hydroxide (NaOH), and especially thin amorphous ones
• Etch silicon layers may be included in the corrosive medium.
• the presented printable paste can be further
• Components such as solvents, thickeners, other inorganic or organic acids or alkaline compounds, adhesion promoters, deaerators, defoamers, thixotropic agents, leveling agents, etc. and / or particles of polymers and / or
• a method of manufacturing a solar cell comprises at least the following steps: providing a silicon substrate; Depositing a passivation layer with a Dielectric and / or amorphous silicon on a surface of the silicon substrate;
• the printable paste applied in the manufacturing process may be a paste as described above in relation to the first aspect of the invention.
• the passivation layer to be deposited may also have properties as already described above.
• the special printable paste can be achieved simultaneously a local opening of the previously deposited passivation layer and the formation of a local electrical contact between the nickel particles contained in the paste and the surface of the silicon substrate.
• Contact formation can be done at low process temperatures. For example, it may be sufficient to heat the paste or silicon substrate with the paste thereon to a temperature between 200 ° C and 600 ° C, preferably between 300 ° C and 550 ° C, and more preferably between 350 ° C and 500 ° C . On the one hand, such heating accelerates the corrosive action of the corrosive medium and, on the other hand, may lead to the formation of a nickel silicide between the nickel particles and the silicon surface and to sintering of the nickel particles.
• the reliable production of metal contact structures with low electrical resistances could be achieved, for example, by heating to above 200 ° C., preferably above 350 ° C. for a period of between 5 s and 60 min, preferably between 20 s and 10 min.
• this can optionally by applying a additional electrically conductive layer can be subsequently thickened, for example by electroplating, electroless plating or light-induced plating.
• the nickel contact structure can be electrically contacted with galvanic or light-induced plating and silver, nickel, copper and / or tin are deposited on the nickel contact structure while applying an electrical voltage in a plating bath.
• solar cells can be provided with an industrial printing method with nickel metal contacts, which can be dispensed with expensive silver and further need to be performed after the deposition of a passivation layer no subsequent high-temperature steps that could endanger the passivation of the passivation layer.
• a solar cell is proposed, as it can be manufactured, inter alia, with the above-described manufacturing method according to the second aspect of the invention.
• the solar cell has a
• Dielectric and / or amorphous silicon is located.
• Metal contacts based on nickel particles contact the surface of the silicon substrate through openings in the silicon substrate
• the metal particles forming the metal contacts for example nickel particles, can lead to a granular structure of the metal contacts.
• nickel-particle-containing paste to produce the metal contacts, it may lead to a partial "caking" of the nickel particles during a sintering step
• nickel particles may have a granular structure, can serve as evidence that in the manufacture of the solar cell, the above-described printable paste or the manufacturing method described above was used with its likewise described advantages.
• the metal contacts may further comprise nickel silicide at an interface with the silicon substrate.
• This nickel silicide can lead to a very low contact resistance between the metal contacts and the silicon substrate.
• the nickel silicide may be elevated upon direct contact of nickel particles with the silicon substrate surface
• the metal contacts can adjoin the passivation layer laterally directly.
• a surface of the silicon substrate can be largely completely with the
• Passivation be covered and be open locally only in the region of the metal contacts, so that no exposed, neither metallized nor passivated surface areas exist adjacent to the metal contacts. This can be achieved, for example, by the production method described above, in which the nickel particles forming the metal contacts are locally printed together with a corrosive medium and thus the passivation layer is etched free exclusively in the region of the metal contacts to be formed.
• Fig. 1 shows a sectional view of a silicon solar cell according to an embodiment of the present invention.
• FIG. 2 shows an enlarged detail A of the solar cell shown in FIG. 1.
• FIG. 3 shows a flowchart for illustrating a processing sequence for a manufacturing method according to an embodiment of the present invention.
• FIG. 1 and 2 a simple form of a solar cell according to the invention is shown.
• a silicon substrate 1 has a flat metal contact 5 on its rear side 3.
• backside contact structures such as, for example, a planar BSF (Back Surface Field) or local contacts with an interposed dielectric layer as back reflector and / or passivation layer can be realized.
• a planar BSF Back Surface Field
• local contacts with an interposed dielectric layer as back reflector and / or passivation layer can be realized.
• a dielectric layer is deposited as a passivation layer 9. While the substrate 1 has a thickness of, for example, 150 to 300 ⁇ m, the passivation layer 9 is only 70 to 90 nm thick. On the one hand, the dielectric layer acts as an antireflection layer and on the other hand serves to passivate the surface 7.
• Metal contacts 1 1 contact the front side 7 of the substrate 1 locally with a finger-shaped structure. The metal contacts 1 1 engage locally through the
• the metal contacts 1 1 have a special structure.
• An inner region 13 of a metal contact 11 is composed of a multiplicity of nickel particles 15. These nickel particles 15 may be sintered together and stand
• the inner region 13 extends through the passivation layer 9 and contacts the front surface 7 of the substrate 1.
• nickel particles 15 have a layer 19 of nickel silicide at an interface with the silicon substrate 1.
• an outer region 21 which is formed from a highly conductive metal such as silver, nickel or copper and has a substantially homogeneous structure.
• the outer region 21 does not engage through the dielectric layer 9.
• a solar cell according to the invention as shown by way of example in FIGS. 1 and 2, can be produced using a production method according to the invention, as will be explained below with reference to the flowchart from FIG. 3.
• a silicon substrate 1 is provided (step SO).
• the silicon substrate 1 may be, for example, a silicon wafer or a silicon thin film.
• the silicon substrate 1 may include additional pretreatment steps, such as etching steps to remove a sawing damage or to create a surface erosion and
• an emitter are generated for example by diffusing suitable dopants.
• Passivation layer 9 deposited (step Sl).
• a passivation layer for example, a silicon nitride layer can be deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition).
• PECVD Plasma Enhanced Chemical Vapor Deposition
• an oxide layer may be grown thermally or chemically, or an aluminum oxide layer may be used as the passivation layer, e.g. by means of an atomic layer deposition (ALD) method, an atmospheric chemical vapor deposition (APCVD) method or a PECVD method.
• ALD atomic layer deposition
• APCVD atmospheric chemical vapor deposition
• PECVD PECVD
• a thin layer of amorphous silicon as
• Passivation layer are deposited.
• a printable paste is screen printed locally on the previously deposited passivation layer (step S2). Also alternative
• the printable paste includes both a corrosive medium based on, for example, phosphoric acid and a variety of nickel particles.
• the printable paste is for example in the form of elongated narrow contact fingers with finger widths of 20 to 150 ⁇ and finger heights of 5 to 50 ⁇ imprinted.
• step S3 the silicon substrate including the paste printed thereon is heated to a temperature of about 350 to 500 ° C and held at that temperature for several seconds.
• a heating step can be realized for example by passing through the silicon substrate by a belt furnace. Due to the elevated temperature, the reactivity of the corrosive medium contained in the printed paste increases, so that it etches through the passivation layer 9 within a few seconds. This can now lead to a direct contact of the also contained in the paste nickel particles 15 come with the silicon surface 7. Due to the elevated temperature of more than 350 ° C., a nickel silicide layer 19 is formed.
• the substrate 1 can be subjected to a rinsing step in deionized water for this purpose.
• the amount of corrosive medium contained in the paste and the duration and temperature of the heating step may be adjusted so that the corrosive medium completely evaporates during the heating step.
• the nickel contact structure thus produced may be thickened by plating.
• the outer plated region 21 has a substantially homogeneous structure and overlies the granular nickel contact structure and the surface Passivation layer 9 on.
• the formation of the nickel silicide regions 19 allows very low contact resistance between the inner region 13 of the metal contact 1 1 and the surface of the
• the plated-on outer region 21 of the metal contact 11 can provide very low series resistances along the finger-like contacts. Overall, this results in the possibility of very low series resistance losses through the metal contacts 11.
• step S5 For completing the solar cell, further method steps (step S5), such as, for example, the formation of a back contact and an edge isolation, can be carried out. Such and other supplementary method steps can alternatively also be carried out between the aforementioned method steps S 1 to S 4.
• step S5 further method steps
• step S5 further method steps
• Such and other supplementary method steps can alternatively also be carried out between the aforementioned method steps S 1 to S 4.
• the terms “comprise”, “exhibit” etc. are not intended to exclude the presence of additional elements.
• the term “a” also does not exclude the presence of a plurality of elements or objects
• further method steps may be necessary or advantageous in addition to the method steps mentioned in the claims in order to finalize, for example, a solar cell are only for better readability and are not intended to limit the scope of the claims in any way.

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• 2011
  • 2011-04-07 DE DE102011016335A patent/DE102011016335B4/de not_active Expired - Fee Related
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