JP2014514757A5 - - Google Patents
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- Publication number
- JP2014514757A5 JP2014514757A5 JP2014502758A JP2014502758A JP2014514757A5 JP 2014514757 A5 JP2014514757 A5 JP 2014514757A5 JP 2014502758 A JP2014502758 A JP 2014502758A JP 2014502758 A JP2014502758 A JP 2014502758A JP 2014514757 A5 JP2014514757 A5 JP 2014514757A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- gate stack
- spacer
- sidewall
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003989 dielectric material Substances 0.000 claims 39
- 125000006850 spacer group Chemical group 0.000 claims 20
- 238000000034 method Methods 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 6
- 238000001020 plasma etching Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 230000007704 transition Effects 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 239000004215 Carbon black (E152) Substances 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- 229930195733 hydrocarbon Natural products 0.000 claims 2
- 150000002430 hydrocarbons Chemical class 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 229910019142 PO4 Inorganic materials 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161468308P | 2011-03-28 | 2011-03-28 | |
| US61/468,308 | 2011-03-28 | ||
| US13/427,062 | 2012-03-22 | ||
| US13/427,062 US9496359B2 (en) | 2011-03-28 | 2012-03-22 | Integrated circuit having chemically modified spacer surface |
| PCT/US2012/030977 WO2012135363A2 (en) | 2011-03-28 | 2012-03-28 | Integrated circuit having chemically modified spacer surface |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017088445A Division JP6534163B2 (ja) | 2011-03-28 | 2017-04-27 | 化学的に改変されたスペーサ表面を有する集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014514757A JP2014514757A (ja) | 2014-06-19 |
| JP2014514757A5 true JP2014514757A5 (enExample) | 2015-05-14 |
Family
ID=46932319
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014502758A Pending JP2014514757A (ja) | 2011-03-28 | 2012-03-28 | 化学的に改変されたスペーサ表面を有する集積回路 |
| JP2017088445A Active JP6534163B2 (ja) | 2011-03-28 | 2017-04-27 | 化学的に改変されたスペーサ表面を有する集積回路 |
| JP2019079500A Active JP6916430B2 (ja) | 2011-03-28 | 2019-04-18 | 化学的に改変されたスペーサ表面を有する集積回路 |
| JP2021017147A Active JP7157835B2 (ja) | 2011-03-28 | 2021-02-05 | 化学的に改変されたスペーサ表面を有する集積回路 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017088445A Active JP6534163B2 (ja) | 2011-03-28 | 2017-04-27 | 化学的に改変されたスペーサ表面を有する集積回路 |
| JP2019079500A Active JP6916430B2 (ja) | 2011-03-28 | 2019-04-18 | 化学的に改変されたスペーサ表面を有する集積回路 |
| JP2021017147A Active JP7157835B2 (ja) | 2011-03-28 | 2021-02-05 | 化学的に改変されたスペーサ表面を有する集積回路 |
Country Status (2)
| Country | Link |
|---|---|
| JP (4) | JP2014514757A (enExample) |
| WO (1) | WO2012135363A2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952725B (zh) * | 2014-03-24 | 2018-02-06 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
| JP7019085B1 (ja) | 2021-04-26 | 2022-02-14 | Dmg森精機株式会社 | 工作機械 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3811518B2 (ja) * | 1995-01-12 | 2006-08-23 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| JP2002246463A (ja) * | 2001-02-13 | 2002-08-30 | Sony Corp | 半導体装置の製造方法及び半導体装置 |
| KR100416628B1 (ko) * | 2002-06-22 | 2004-01-31 | 삼성전자주식회사 | 게이트 스페이서를 포함하는 반도체 소자 제조 방법 |
| US6806149B2 (en) * | 2002-09-26 | 2004-10-19 | Texas Instruments Incorporated | Sidewall processes using alkylsilane precursors for MOS transistor fabrication |
| JP2004134687A (ja) * | 2002-10-15 | 2004-04-30 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6812073B2 (en) * | 2002-12-10 | 2004-11-02 | Texas Instrument Incorporated | Source drain and extension dopant concentration |
| KR20040051696A (ko) * | 2002-12-11 | 2004-06-19 | 주식회사 하이닉스반도체 | 반도체소자의 스페이서 형성방법 |
| JP2004200550A (ja) * | 2002-12-20 | 2004-07-15 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP4193638B2 (ja) * | 2003-08-20 | 2008-12-10 | ソニー株式会社 | 半導体装置の製造方法および半導体装置 |
| US6991979B2 (en) * | 2003-09-22 | 2006-01-31 | International Business Machines Corporation | Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs |
| US7229869B2 (en) * | 2005-03-08 | 2007-06-12 | Texas Instruments Incorporated | Method for manufacturing a semiconductor device using a sidewall spacer etchback |
| JP2007053296A (ja) * | 2005-08-19 | 2007-03-01 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| US7371649B2 (en) * | 2005-09-13 | 2008-05-13 | United Microelectronics Corp. | Method of forming carbon-containing silicon nitride layer |
| JP2007157870A (ja) * | 2005-12-02 | 2007-06-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| JP2008047820A (ja) * | 2006-08-21 | 2008-02-28 | Toshiba Corp | 半導体装置の製造方法および半導体装置 |
| JP2008117848A (ja) * | 2006-11-01 | 2008-05-22 | Nec Electronics Corp | 半導体装置の製造方法 |
| JP2009140967A (ja) * | 2007-12-03 | 2009-06-25 | Panasonic Corp | 半導体装置の製造方法 |
| JP2009170751A (ja) * | 2008-01-18 | 2009-07-30 | Fujitsu Ltd | 半導体装置の製造方法 |
| US8138045B2 (en) * | 2008-05-19 | 2012-03-20 | Texas Instruments Incorporated | Method of forming sidewall spacers to reduce formation of recesses in the substrate and increase dopant retention in a semiconductor device |
| JP2010118500A (ja) * | 2008-11-13 | 2010-05-27 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2012
- 2012-03-28 WO PCT/US2012/030977 patent/WO2012135363A2/en not_active Ceased
- 2012-03-28 JP JP2014502758A patent/JP2014514757A/ja active Pending
-
2017
- 2017-04-27 JP JP2017088445A patent/JP6534163B2/ja active Active
-
2019
- 2019-04-18 JP JP2019079500A patent/JP6916430B2/ja active Active
-
2021
- 2021-02-05 JP JP2021017147A patent/JP7157835B2/ja active Active
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