JP2014225704A - 液浸リソグラフィ用ウェハテーブル - Google Patents
液浸リソグラフィ用ウェハテーブル Download PDFInfo
- Publication number
- JP2014225704A JP2014225704A JP2014173592A JP2014173592A JP2014225704A JP 2014225704 A JP2014225704 A JP 2014225704A JP 2014173592 A JP2014173592 A JP 2014173592A JP 2014173592 A JP2014173592 A JP 2014173592A JP 2014225704 A JP2014225704 A JP 2014225704A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- optical system
- projection optical
- wafer
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Abstract
Description
本願は2003年7月8日に出願された米国特許仮出願第60/485,868号の優先権を主張し、その全体を援用して本文の記載の一部とする。
本発明は概して半導体処理装置に関する。より詳細には、本発明は液浸リソグラフィシステムにおいて、レンズの表面とレンズに相対して移動される平面との間に液体を効率的に収容することを可能とするための方法及び装置に関する。
半導体処理に用いられるフォトリソグラフィ機のような精密機器について、精密機器の例えば精度のような性能に影響を及ぼす因子は一般に対処しなければならず、かつ、可能な限り取り除かなければならない。液浸リソグラフィ露光システムのような精密機器の性能に悪影響が及ぼされるときは、精密機器を用いて作られた製品は不適切に製作されるかもしれず、それによって機能が不適切になるであろう。
に位置付けられた液体が、レンズとウェハテーブルの実質的に任意の表面との間から漏出することを防止するために好適なシステムである。
6及びレチクル68の光軸と垂直に連続的に移動される。このプロセスに続いて、レチクル68の像はウェハ64の領域に連続的に露光され、半導体ウェハ64の次の領域が、照明系42、レチクル68及び投影光学系46に相対する位置に搬送される。
テージの移動によって生じる反力は、米国特許第5,874,820号に記載され、特開平8−330224号に公開されているように、フレーム部材の使用によって、床(大地)に機械的に逃がしうる。これらの全体をここに援用して本文の記載の一部とする。
Claims (20)
- 投影光学系及び液体を介して光で基板を露光する液浸リソグラフィ装置であって、
前記投影光学系を支持するフレームと、
前記投影光学系の下方に配置されるベースと、
前記ベース上に配置され、前記基板を支持するテーブルを有する基板ステージと、
前記ベース上で浮上支持される前記基板ステージを駆動する平面モータと、
前記テーブルの表面と実質的に同一面となるように配置される表面を有するセンサーと、を備え、
前記基板ステージは、前記基板の表面が前記テーブルの表面と実質的に同一面となるように前記テーブルで前記基板を支持するとともに、前記テーブルの表面によって、前記投影光学系の下で前記基板の表面から外れる前記液体の少なくとも一部を維持可能であり、
前記平面モータは、前記センサーの表面と前記基板の表面とがそれぞれ前記投影光学系と対向して配置されるように前記基板ステージを駆動し、前記基板ステージの移動によって前記投影光学系と前記センサーの表面との間、及び前記投影光学系と前記基板の表面との間にそれぞれ前記液体が維持されるギャップが形成される。 - 請求項1に記載の液浸リソグラフィ装置において、
前記基板ステージは、前記テーブルの表面と、前記センサーの表面と、前記テーブルに支持される基板の表面とを含む上面が前記投影光学系と対向して配置されるように駆動されるとともに、前記投影光学系と前記上面の一部との間に形成されるギャップに維持される前記液体に対して前記テーブルが相対移動するように駆動される。 - 請求項1又は2に記載の液浸リソグラフィ装置において、
前記テーブルの表面と実質的に同一面となるように配置されかつマークが形成される表面を有する基準部材を、さらに備え、
前記基板ステージは、前記基準部材の表面が前記投影光学系と対向するように駆動され、前記投影光学系と前記基準部材の表面との間に前記液体が維持されるギャップが形成される。 - 請求項3に記載の液浸リソグラフィ装置において、
前記基板ステージは、前記テーブルの表面と、前記センサーの表面と、前記基準部材の表面と、前記テーブルに支持される基板の表面とを含む上面が前記投影光学系と対向して配置されるように駆動されるとともに、前記投影光学系と前記上面の一部との間に形成されるギャップに維持される前記液体に対して前記テーブルが相対移動するように駆動される。 - 請求項1〜4のいずれか一項に記載の液浸リソグラフィ装置において、
前記センサーは、前記投影光学系と、前記投影光学系と前記センサーの表面との間に維持される前記液体とを介して前記光を検出可能である。 - 請求項1〜5のいずれか一項に記載の液浸リソグラフィ装置において、
前記基板ステージは、前記基板の表面と前記テーブルの表面との間にギャップが形成されるように前記テーブルで前記基板を支持する。 - 請求項1〜6のいずれか一項に記載の液浸リソグラフィ装置において、
前記基板ステージは、前記投影光学系と前記基板の表面の一部との間に、前記液体が維持されるギャップが形成されるように、前記投影光学系に対向して配置されるとともに、前記ギャップに維持される前記液体に対して前記基板が相対移動するように駆動される。 - 請求項1〜7のいずれか一項に記載の液浸リソグラフィ装置において、
前記光が通過する液浸領域は、前記液体によって、前記投影光学系と前記テーブルとの間で前記基板の表面よりも小さい領域内に形成される。 - 請求項1〜8のいずれか一項に記載の液浸リソグラフィ装置において、
前記光で照明されるマスクを支持するマスクステージを、さらに備え、
前記基板ステージ及び前記マスクステージの移動によって、前記基板の走査露光が行われる。 - デバイス製造方法であって、
請求項1〜9のいずれか一項に記載の液浸リソグラフィ装置を用いて基板を露光することと、
前記露光された基板を現像することと、を含む。 - 投影光学系及び液体を介して光で基板を露光する液浸リソグラフィ方法であって、
前記基板の表面がテーブルの表面と実質的に同一面となるように、前記テーブルで前記基板を支持することと、
前記テーブルの表面と実質的に同一面となるように配置される、センサーの表面と、前記テーブルに支持される基板の表面とがそれぞれ前記投影光学系と対向して配置されるように、前記投影光学系の下方に配置されるベース上で浮上支持される、前記テーブルを有する基板ステージを、平面モータによって駆動することと、を含み、
前記基板ステージの移動によって、前記投影光学系と前記センサーの表面との間、及び前記投影光学系と前記基板の表面との間にそれぞれ前記液体が維持されるギャップが形成され、
前記テーブルの表面によって、前記投影光学系の下で前記基板の表面から外れる前記液体の少なくとも一部が維持される。 - 請求項11に記載の液浸リソグラフィ方法において、
前記基板ステージは、前記テーブルの表面と、前記センサーの表面と、前記テーブルに支持される基板の表面とを含む上面が前記投影光学系と対向して配置されるように駆動されるとともに、前記投影光学系と前記上面の一部との間に形成されるギャップに維持される前記液体に対して前記テーブルが相対移動するように駆動される。 - 請求項11又は12に記載の液浸リソグラフィ方法において、
前記基板ステージは、前記テーブルの表面と実質的に同一面となるように配置されかつマークが形成される表面を有する基準部材が前記投影光学系と対向するように駆動され、前記投影光学系と前記基準部材の表面との間に前記液体が維持されるギャップが形成される。 - 請求項13に記載の液浸リソグラフィ方法において、
前記基板ステージは、前記テーブルの表面と、前記センサーの表面と、前記基準部材の表面と、前記テーブルに支持される基板の表面とを含む上面が前記投影光学系と対向して配置されるように駆動されるとともに、前記投影光学系と前記上面の一部との間に形成されるギャップに維持される前記液体に対して前記テーブルが相対移動するように駆動される。 - 請求項11〜14のいずれか一項に記載の液浸リソグラフィ方法において、
前記光は、前記投影光学系と、前記投影光学系と前記センサーの表面との間に維持される前記液体とを介して前記センサーで検出される。 - 請求項11〜15のいずれか一項に記載の液浸リソグラフィ方法において、
前記基板はその表面と前記テーブルの表面との間にギャップが形成されるように前記テーブルに支持される。 - 請求項11〜16のいずれか一項に記載の液浸リソグラフィ方法において、
前記基板ステージは、前記投影光学系と前記基板の表面の一部との間に、前記液体が維持されるギャップが形成されるように、前記投影光学系に対向して配置されるとともに、前記ギャップに維持される前記液体に対して前記基板が相対移動するように駆動される。 - 請求項11〜17のいずれか一項に記載の液浸リソグラフィ方法において、
前記光が通過する液浸領域は、前記液体によって、前記投影光学系と前記テーブルとの間で前記基板の表面よりも小さい領域内に形成される。 - 請求項11〜18のいずれか一項に記載の液浸リソグラフィ方法において、
前記光で照明されるマスクを支持するマスクステージ、及び前記基板ステージの移動によって、前記基板の走査露光が行われる。 - デバイス製造方法であって、
請求項11〜19のいずれか一項に記載の液浸リソグラフィ方法を用いて基板を露光することと、
前記露光された基板を現像することと、を含む。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48586803P | 2003-07-08 | 2003-07-08 | |
US60/485,868 | 2003-07-08 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013222782A Division JP5708756B2 (ja) | 2003-07-08 | 2013-10-25 | 液浸リソグラフィ用ウェハテーブル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014225704A true JP2014225704A (ja) | 2014-12-04 |
JP5761436B2 JP5761436B2 (ja) | 2015-08-12 |
Family
ID=34102667
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006518633A Expired - Fee Related JP4697138B2 (ja) | 2003-07-08 | 2004-06-02 | 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法 |
JP2010140980A Expired - Fee Related JP5381910B2 (ja) | 2003-07-08 | 2010-06-21 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2012078273A Expired - Fee Related JP5472355B2 (ja) | 2003-07-08 | 2012-03-29 | 液浸露光装置、液浸露光方法、デバイス製造方法、及び液浸露光装置の製造方法 |
JP2013222780A Expired - Fee Related JP5708755B2 (ja) | 2003-07-08 | 2013-10-25 | 液浸リソグラフィ用ウェハテーブル |
JP2013222782A Expired - Fee Related JP5708756B2 (ja) | 2003-07-08 | 2013-10-25 | 液浸リソグラフィ用ウェハテーブル |
JP2014173592A Expired - Fee Related JP5761436B2 (ja) | 2003-07-08 | 2014-08-28 | 液浸リソグラフィ用ウェハテーブル |
JP2014173383A Expired - Fee Related JP5761435B2 (ja) | 2003-07-08 | 2014-08-28 | 液浸リソグラフィ用ウェハテーブル |
Family Applications Before (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006518633A Expired - Fee Related JP4697138B2 (ja) | 2003-07-08 | 2004-06-02 | 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法 |
JP2010140980A Expired - Fee Related JP5381910B2 (ja) | 2003-07-08 | 2010-06-21 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2012078273A Expired - Fee Related JP5472355B2 (ja) | 2003-07-08 | 2012-03-29 | 液浸露光装置、液浸露光方法、デバイス製造方法、及び液浸露光装置の製造方法 |
JP2013222780A Expired - Fee Related JP5708755B2 (ja) | 2003-07-08 | 2013-10-25 | 液浸リソグラフィ用ウェハテーブル |
JP2013222782A Expired - Fee Related JP5708756B2 (ja) | 2003-07-08 | 2013-10-25 | 液浸リソグラフィ用ウェハテーブル |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014173383A Expired - Fee Related JP5761435B2 (ja) | 2003-07-08 | 2014-08-28 | 液浸リソグラフィ用ウェハテーブル |
Country Status (6)
Country | Link |
---|---|
US (5) | US7301607B2 (ja) |
EP (6) | EP2853943B1 (ja) |
JP (7) | JP4697138B2 (ja) |
HK (2) | HK1206111A1 (ja) |
TW (6) | TWI476503B (ja) |
WO (1) | WO2005010611A2 (ja) |
Families Citing this family (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101713932B (zh) | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
EP2613193B1 (en) | 2003-04-11 | 2016-01-13 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TW201445617A (zh) | 2003-06-13 | 2014-12-01 | 尼康股份有限公司 | 基板載台、曝光裝置 |
TWI536430B (zh) | 2003-06-19 | 2016-06-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
EP2853943B1 (en) * | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4524669B2 (ja) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | 投影光学系の検査方法および検査装置 |
KR101239632B1 (ko) | 2003-08-21 | 2013-03-11 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
JP5136566B2 (ja) * | 2003-09-29 | 2013-02-06 | 株式会社ニコン | 露光装置及び露光方法並びにデバイス製造方法 |
KR101739711B1 (ko) | 2003-09-29 | 2017-05-24 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
JP4515209B2 (ja) * | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
TWI598934B (zh) | 2003-10-09 | 2017-09-11 | Nippon Kogaku Kk | Exposure apparatus, exposure method, and device manufacturing method |
WO2005043607A1 (ja) | 2003-10-31 | 2005-05-12 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
TWI470371B (zh) * | 2003-12-03 | 2015-01-21 | 尼康股份有限公司 | An exposure apparatus, an exposure method, an element manufacturing method, and an optical component |
JP2005175034A (ja) * | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
KR101499405B1 (ko) | 2003-12-15 | 2015-03-05 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101833247B (zh) | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | 微光刻投影曝光系统的投影物镜的光学测量的测量系统 |
KR101681101B1 (ko) | 2004-06-09 | 2016-11-30 | 가부시키가이샤 니콘 | 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트 |
WO2005124835A1 (ja) | 2004-06-21 | 2005-12-29 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP3267257B1 (en) * | 2004-08-03 | 2019-02-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
WO2006019124A1 (ja) | 2004-08-18 | 2006-02-23 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006030908A1 (ja) | 2004-09-17 | 2006-03-23 | Nikon Corporation | 基板保持装置、露光装置、及びデバイス製造方法 |
CN100533662C (zh) | 2004-11-01 | 2009-08-26 | 株式会社尼康 | 曝光装置及器件制造方法 |
US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI649790B (zh) | 2004-11-18 | 2019-02-01 | 日商尼康股份有限公司 | 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法 |
US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100576444C (zh) | 2004-12-15 | 2009-12-30 | 株式会社尼康 | 衬底保持装置、曝光装置以及器件制造方法 |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20090262316A1 (en) | 2005-01-31 | 2009-10-22 | Nikon Corporation | Exposure apparatus and method for producing device |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
KR100938271B1 (ko) | 2005-02-10 | 2010-01-22 | 에이에스엠엘 네델란즈 비.브이. | 침지 액체, 노광 장치, 및 노광 프로세스 |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684010B2 (en) * | 2005-03-09 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing |
US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US7291850B2 (en) | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101466533B1 (ko) | 2005-04-25 | 2014-11-27 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치 및 액체 공급 방법 |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7924416B2 (en) * | 2005-06-22 | 2011-04-12 | Nikon Corporation | Measurement apparatus, exposure apparatus, and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411658B2 (en) | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7633073B2 (en) * | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
CN101416076A (zh) * | 2006-04-03 | 2009-04-22 | 株式会社尼康 | 对浸没液体为疏溶的入射表面和光学窗 |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7638798B2 (en) * | 2006-08-24 | 2009-12-29 | Coherent, Inc. | Laminated wafer sensor system for UV dose measurement |
US20080158531A1 (en) * | 2006-11-15 | 2008-07-03 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP5055971B2 (ja) * | 2006-11-16 | 2012-10-24 | 株式会社ニコン | 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法 |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
JP2008258324A (ja) * | 2007-04-03 | 2008-10-23 | Canon Inc | 露光装置及びデバイスの製造方法 |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9013672B2 (en) | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
JP2009033111A (ja) * | 2007-05-28 | 2009-02-12 | Nikon Corp | 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 |
US8264662B2 (en) * | 2007-06-18 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-line particle detection for immersion lithography |
DE102007043896A1 (de) * | 2007-09-14 | 2009-04-02 | Carl Zeiss Smt Ag | Mikrooptik zur Messung der Position eines Luftbildes |
US8786829B2 (en) | 2008-05-13 | 2014-07-22 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8228482B2 (en) * | 2008-05-13 | 2012-07-24 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
NL2003638A (en) | 2008-12-03 | 2010-06-07 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2003758A (en) * | 2008-12-04 | 2010-06-07 | Asml Netherlands Bv | A member with a cleaning surface and a method of removing contamination. |
EP2196857A3 (en) | 2008-12-09 | 2010-07-21 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
JP6155581B2 (ja) * | 2012-09-14 | 2017-07-05 | 株式会社ニコン | 露光装置、露光方法、デバイス製造方法 |
US9177849B2 (en) | 2012-12-18 | 2015-11-03 | Intermolecular, Inc. | Chuck for mounting a semiconductor wafer for liquid immersion processing |
EP3559748B1 (en) | 2016-12-22 | 2023-03-29 | ASML Netherlands B.V. | A lithographic apparatus comprising an object with an upper layer having improved resistance to peeling off |
JP6418281B2 (ja) * | 2017-06-07 | 2018-11-07 | 株式会社ニコン | 露光装置 |
DE102017216679A1 (de) | 2017-09-20 | 2019-03-21 | Carl Zeiss Smt Gmbh | Mikrolithographische Projektionsbelichtungsanlage |
US11275312B1 (en) | 2020-11-30 | 2022-03-15 | Waymo Llc | Systems and methods for verifying photomask cleanliness |
Family Cites Families (162)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5645021A (en) * | 1979-09-19 | 1981-04-24 | Hitachi Ltd | Moving apparatus |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPH04305917A (ja) * | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
US5243195A (en) | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
US6078380A (en) | 1991-10-08 | 2000-06-20 | Nikon Corporation | Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP3747958B2 (ja) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JPH07220990A (ja) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JP3387075B2 (ja) * | 1994-12-12 | 2003-03-17 | 株式会社ニコン | 走査露光方法、露光装置、及び走査型露光装置 |
JPH08171054A (ja) | 1994-12-16 | 1996-07-02 | Nikon Corp | 反射屈折光学系 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
EP1341044A3 (en) * | 1995-05-30 | 2003-10-29 | ASML Netherlands B.V. | Positioning device with a reference frame for a measuring system |
KR970067585A (ko) | 1996-03-25 | 1997-10-13 | 오노 시게오 | 결상특성의 측정방법 및 투영노광방법 |
JPH103039A (ja) | 1996-06-14 | 1998-01-06 | Nikon Corp | 反射屈折光学系 |
JPH1020195A (ja) | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
US5892117A (en) | 1997-06-12 | 1999-04-06 | Albemarle Corporation | Preparation and uses of N-methylnitrone |
JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
JPH11260686A (ja) * | 1998-03-11 | 1999-09-24 | Toshiba Corp | 露光方法 |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
US6999162B1 (en) * | 1998-10-28 | 2006-02-14 | Nikon Corporation | Stage device, exposure system, method of device manufacture, and device |
JP2001143993A (ja) * | 1999-11-12 | 2001-05-25 | Mitsubishi Cable Ind Ltd | 露光装置及び露光方法、光源装置、並びにデバイス製造方法 |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
DE10051330C2 (de) * | 2000-10-09 | 2002-09-19 | Rados Technology Gmbh | Verfahren zur Verkürzung der statistischen Messzeiten im Bereich der Radioaktivitätsmessung |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US6529260B2 (en) * | 2001-05-03 | 2003-03-04 | Nikon Corporation | Lifting support assembly for an exposure apparatus |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
US6801301B2 (en) * | 2001-10-12 | 2004-10-05 | Canon Kabushiki Kaisha | Exposure apparatus |
US6635292B2 (en) * | 2001-10-26 | 2003-10-21 | Mars, Incorporated | Ultrasonic rotary forming of food products |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
US6829188B2 (en) * | 2002-08-19 | 2004-12-07 | Micron Technology, Inc. | Dual loop sensing scheme for resistive memory elements |
TWI242691B (en) | 2002-08-23 | 2005-11-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
CN101470360B (zh) * | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG121818A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101713932B (zh) * | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
EP1429188B1 (en) | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
US6992750B2 (en) * | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
CN100370533C (zh) | 2002-12-13 | 2008-02-20 | 皇家飞利浦电子股份有限公司 | 用于照射层的方法和用于将辐射导向层的装置 |
WO2004057589A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
ES2268450T3 (es) | 2002-12-19 | 2007-03-16 | Koninklijke Philips Electronics N.V. | Metodo y dispositivo para irradiar puntos en una capa. |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
SG121844A1 (en) * | 2002-12-20 | 2006-05-26 | Asml Netherlands Bv | Device manufacturing method |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) * | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
JP4650413B2 (ja) | 2003-04-10 | 2011-03-16 | 株式会社ニコン | 液浸リソグフラフィ装置用の移送領域を含む環境システム |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
CN1771463A (zh) | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
WO2004090634A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
EP2613193B1 (en) * | 2003-04-11 | 2016-01-13 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
JP4837556B2 (ja) | 2003-04-11 | 2011-12-14 | 株式会社ニコン | 液浸リソグラフィにおける光学素子の洗浄方法 |
SG152078A1 (en) | 2003-04-17 | 2009-05-29 | Nikon Corp | Optical arrangement of autofocus elements for use with immersion lithography |
WO2004099373A2 (en) * | 2003-05-02 | 2004-11-18 | University Of North Carolina At Charlotte | Biocompatible resists |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US6995833B2 (en) * | 2003-05-23 | 2006-02-07 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1486828B1 (en) * | 2003-06-09 | 2013-10-09 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) * | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4084710B2 (ja) * | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) * | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1639391A4 (en) | 2003-07-01 | 2009-04-29 | Nikon Corp | USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS |
EP2853943B1 (en) * | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
EP3223074A1 (en) | 2003-09-03 | 2017-09-27 | Nikon Corporation | Apparatus and method for immersion lithography for recovering fluid |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
KR101739711B1 (ko) * | 2003-09-29 | 2017-05-24 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US20070105050A1 (en) | 2003-11-05 | 2007-05-10 | Dsm Ip Assets B.V. | Method and apparatus for producing microchips |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
JP4747263B2 (ja) | 2003-11-24 | 2011-08-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | オブジェクティブにおける光学素子のための保持装置 |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
EP1700163A1 (en) | 2003-12-15 | 2006-09-13 | Carl Zeiss SMT AG | Objective as a microlithography projection objective with at least one liquid lens |
KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
WO2005106589A1 (en) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US7079242B2 (en) * | 2003-12-19 | 2006-07-18 | Core Laboratories L.P. | Method and apparatus for determining characteristics of particles in a fluid sample |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
KR101407204B1 (ko) * | 2004-01-14 | 2014-06-13 | 칼 짜이스 에스엠티 게엠베하 | 투영 대물렌즈 |
EP1716457B9 (en) | 2004-01-16 | 2012-04-04 | Carl Zeiss SMT GmbH | Projection system with a polarization-modulating element having a variable thickness profile |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
DE602005019689D1 (de) | 2004-01-20 | 2010-04-15 | Zeiss Carl Smt Ag | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
WO2005074606A2 (en) | 2004-02-03 | 2005-08-18 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
KR101115111B1 (ko) | 2004-02-13 | 2012-04-16 | 칼 짜이스 에스엠티 게엠베하 | 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈 |
JP2007523383A (ja) | 2004-02-18 | 2007-08-16 | コーニング インコーポレイテッド | 深紫外光による大開口数結像のための反射屈折結像光学系 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) * | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) * | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) * | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) * | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005111722A2 (en) | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20180078354A (ko) | 2004-05-17 | 2018-07-09 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-06-02 EP EP14189351.1A patent/EP2853943B1/en not_active Not-in-force
- 2004-06-02 EP EP12159430.3A patent/EP2466382B1/en not_active Not-in-force
- 2004-06-02 EP EP12159431.1A patent/EP2466383B1/en not_active Not-in-force
- 2004-06-02 EP EP04754129.7A patent/EP1652003B1/en not_active Not-in-force
- 2004-06-02 EP EP16197506.5A patent/EP3179309A1/en not_active Withdrawn
- 2004-06-02 WO PCT/US2004/017452 patent/WO2005010611A2/en active Application Filing
- 2004-06-02 JP JP2006518633A patent/JP4697138B2/ja not_active Expired - Fee Related
- 2004-06-02 EP EP14189363.6A patent/EP2843472B1/en not_active Not-in-force
- 2004-06-18 TW TW102130167A patent/TWI476503B/zh not_active IP Right Cessation
- 2004-06-18 TW TW102131512A patent/TWI476504B/zh not_active IP Right Cessation
- 2004-06-18 TW TW101127186A patent/TWI412875B/zh not_active IP Right Cessation
- 2004-06-18 TW TW093117615A patent/TWI412874B/zh not_active IP Right Cessation
- 2004-06-18 TW TW101127184A patent/TWI414879B/zh not_active IP Right Cessation
- 2004-06-18 TW TW100109479A patent/TWI461823B/zh not_active IP Right Cessation
-
2005
- 2005-12-29 US US11/319,399 patent/US7301607B2/en active Active
-
2006
- 2006-12-01 US US11/606,913 patent/US7486380B2/en active Active
-
2008
- 2008-12-22 US US12/318,122 patent/US8508718B2/en not_active Expired - Fee Related
-
2010
- 2010-06-21 JP JP2010140980A patent/JP5381910B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-29 JP JP2012078273A patent/JP5472355B2/ja not_active Expired - Fee Related
-
2013
- 2013-07-10 US US13/938,491 patent/US20130301018A1/en not_active Abandoned
- 2013-07-15 US US13/941,849 patent/US20130301016A1/en not_active Abandoned
- 2013-10-25 JP JP2013222780A patent/JP5708755B2/ja not_active Expired - Fee Related
- 2013-10-25 JP JP2013222782A patent/JP5708756B2/ja not_active Expired - Fee Related
-
2014
- 2014-08-28 JP JP2014173592A patent/JP5761436B2/ja not_active Expired - Fee Related
- 2014-08-28 JP JP2014173383A patent/JP5761435B2/ja not_active Expired - Fee Related
-
2015
- 2015-07-08 HK HK15106508.5A patent/HK1206111A1/xx not_active IP Right Cessation
- 2015-07-20 HK HK15106860.7A patent/HK1206434A1/xx not_active IP Right Cessation
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5761436B2 (ja) | 液浸リソグラフィ用ウェハテーブル | |
KR101187617B1 (ko) | 노광 장치 및 디바이스 제조방법 | |
JP2007180283A (ja) | リソグラフィ装置、リソグラフィ装置のレチクルマスキングデバイス、気体軸受け、およびこのような気体軸受けを有する装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140828 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150512 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150525 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5761436 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |