JP2014187220A - 半導体装置の製造方法 - Google Patents
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Abstract
【解決手段】実施形態の半導体装置の製造方法においては、第1の半導体チップ2A上に積層された第2の半導体チップ2Bの第3のアライメントマーク5Cと、第2の半導体チップ4B上に移動させた第3の半導体チップ2Cの第4のアライメントマーク5Dの位置情報を取得する。第1の半導体チップ2Aに設けられた第1のアライメントマーク5Aの位置情報と第3および第4のアライメントマーク5C、4Dの位置情報とに基づいて、第2の半導体チップ2Bと第3の半導体チップ2Cとを位置合わせして積層する。
【選択図】図3
Description
Claims (5)
- 第1の表面に設けられた第1のバンプ電極および第1のアライメントマークを備える第1の半導体チップを用意する工程と、
第2の表面に設けられた第2のバンプ電極および第2のアライメントマークと、前記第2の表面と反対側の第3の表面に設けられた第3のバンプ電極および第3のアライメントマークと、前記第2のバンプ電極と前記第3のバンプ電極とを電気的に接続する貫通電極とを備える第2の半導体チップを用意する工程と、
第4の表面に設けられた第4のバンプ電極および第4のアライメントマークを備える第3の半導体チップを用意する工程と、
前記第1の半導体チップ上に前記第2の半導体チップを移動させ、前記第1の表面と前記第2の表面とを対向させる工程と、
前記第1の半導体チップの前記第1のアライメントマークの位置情報として第1のxy座標と前記第1の半導体チップ上に移動させた前記第2の半導体チップの前記第2のアライメントマークの位置情報として第2のxy座標を取得する工程と、
前記第1および第2のアライメントマークの位置情報としての前記第1および第2のxy座標に基づいて、前記第1の半導体チップと前記第2の半導体チップとを位置合わせしつつ積層する工程と、
前記第1のバンプ電極と前記第2のバンプ電極とを接触させて加熱し、前記第1のバンプ電極と前記第2のバンプ電極とを接続する工程と、
前記第2の半導体チップ上に前記第3の半導体チップを移動させ、前記第3の表面と前記第4の表面とを対向させる工程と、
前記第2の半導体チップの前記第3のアライメントマークの位置情報として第3のxy座標と前記第2の半導体チップ上に移動させた前記第3の半導体チップの前記第4のアライメントマークの位置情報として第4のxy座標を取得する工程と、
前記第2の半導体チップの積層時に取得した前記第1のアライメントマークの位置情報としての第1のxy座標と前記第3のアライメントマークの位置情報としての第3のxy座標との平均座標を求め、前記平均座標に対して前記第4のアライメントマークを合わせることによって、前記第2の半導体チップと前記第3の半導体チップとを位置合わせしつつ積層する工程と、
前記第3のバンプ電極と前記第4のバンプ電極とを接触させて加熱し、前記第3のバンプ電極と前記第4のバンプ電極とを接続する工程と
を具備することを特徴とする半導体装置の製造方法。 - 第1の表面に設けられた第1のバンプ電極および第1のアライメントマークを備える第1の半導体チップを用意する工程と、
第2の表面に設けられた第2のバンプ電極および第2のアライメントマークと、前記第2の表面と反対側の第3の表面に設けられた第3のバンプ電極および第3のアライメントマークと、前記第2のバンプ電極と前記第3のバンプ電極とを電気的に接続する貫通電極とを備える第2の半導体チップを用意する工程と、
第4の表面に設けられた第4のバンプ電極および第4のアライメントマークを備える第3の半導体チップを用意する工程と、
前記第1の半導体チップ上に前記第2の半導体チップを移動させ、前記第1の表面と前記第2の表面とを対向させる工程と、
前記第1の半導体チップの前記第1のアライメントマークと前記第1の半導体チップ上に移動させた前記第2の半導体チップの前記第2のアライメントマークの位置情報を取得する工程と、
前記第1および第2のアライメントマークの位置情報に基づいて、前記第1の半導体チップと前記第2の半導体チップとを位置合わせしつつ積層する工程と、
前記第2の半導体チップ上に前記第3の半導体チップを移動させ、前記第3の表面と前記第4の表面とを対向させる工程と、
前記第2の半導体チップの前記第3のアライメントマークと前記第2の半導体チップ上に移動させた前記第3の半導体チップの前記第4のアライメントマークの位置情報を取得する工程と、
前記第1のアライメントマークの位置情報と前記第3および第4のアライメントマークの位置情報とに基づいて、前記第2の半導体チップと前記第3の半導体チップとを位置合わせしつつ積層する工程と
を具備することを特徴とする半導体装置の製造方法。 - 前記第3の半導体チップは、前記第4の表面と反対側の第5の表面に設けられた第5のバンプ電極および第5のアライメントマークと、前記第4のバンプ電極と前記第5のバンプ電極とを電気的に接続する貫通電極とを備え、
さらに、第6の表面に設けられた第6のバンプ電極および第6のアライメントマークを備える第4の半導体チップを用意する工程と、
前記第3の半導体チップ上に前記第4の半導体チップを移動させ、前記第5の表面と前記第6の表面とを対向させる工程と、
前記第3の半導体チップの前記第5のアライメントマークと前記第3の半導体チップ上に移動させた前記第4の半導体チップの前記第6のアライメントマークの位置情報を取得する工程と、
少なくとも前記第1のアライメントマークの位置情報と前記第5および第6のアライメントマークの位置情報とに基づいて、前記第3の半導体チップと前記第4の半導体チップとを位置合わせしつつ積層する工程と、
を具備する、請求項2に記載の半導体装置の製造方法。 - 前記第2の半導体チップと前記第3の半導体チップとの位置合わせは、前記第2の半導体チップの積層時に取得した前記第1のアライメントマークの位置情報としてのxy座標と前記第3のアライメントマークの位置情報としてのxy座標とが対角の頂点となる四角形領域の内側に、前記第4のアライメントマークを合わせることにより行われる、請求項2に記載の半導体装置の製造方法。
- 前記第2の半導体チップと前記第3の半導体チップとの位置合わせは、前記第2の半導体チップの積層時に取得した前記第1のアライメントマークの位置情報としてのxy座標と前記第3のアライメントマークの位置情報としてのxy座標との平均座標に対して、前記第4のアライメントマークを合わせることにより行われる、請求項2に記載の半導体装置の製造方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020150102A (ja) * | 2019-03-13 | 2020-09-17 | パナソニックIpマネジメント株式会社 | 部品搭載装置および部品搭載方法 |
JP2021027171A (ja) * | 2019-08-05 | 2021-02-22 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
US10964671B2 (en) | 2018-07-12 | 2021-03-30 | Toshiba Memory Corporation | Stacked chips comprising interconnects |
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KR102469828B1 (ko) * | 2014-12-18 | 2022-11-23 | 소니그룹주식회사 | 반도체 장치, 제조 방법, 전자 기기 |
DE102019100064B3 (de) * | 2019-01-03 | 2020-07-09 | Heinrich Georg Gmbh Maschinenfabrik | Verfahren und Positioniersystem zur Herstellung von Transformatorkernen |
WO2021146860A1 (zh) * | 2020-01-20 | 2021-07-29 | 深圳市汇顶科技股份有限公司 | 堆叠式的芯片、制造方法、图像传感器和电子设备 |
US11756921B2 (en) | 2021-03-18 | 2023-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for bonding semiconductor devices |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175263A (ja) * | 2003-12-12 | 2005-06-30 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、電子機器 |
JP2005217071A (ja) * | 2004-01-28 | 2005-08-11 | Nec Electronics Corp | マルチチップ半導体装置用チップ及びその製造方法 |
US20080188036A1 (en) * | 2007-02-07 | 2008-08-07 | La Tulipe Douglas C | Method, system, program product for bonding two circuitry-including substrates and related stage |
WO2011087003A1 (ja) * | 2010-01-15 | 2011-07-21 | 東レエンジニアリング株式会社 | 3次元実装方法および装置 |
WO2013017924A2 (en) * | 2011-08-02 | 2013-02-07 | Soitec | Method for correcting misalignment of positions on a first wafer bonded to a second wafer |
Family Cites Families (18)
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---|---|---|---|---|
JP2944449B2 (ja) * | 1995-02-24 | 1999-09-06 | 日本電気株式会社 | 半導体パッケージとその製造方法 |
JP3891838B2 (ja) * | 2001-12-26 | 2007-03-14 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
JP4056854B2 (ja) * | 2002-11-05 | 2008-03-05 | 新光電気工業株式会社 | 半導体装置の製造方法 |
JP2004281491A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体装置及びその製造方法 |
US7786572B2 (en) * | 2005-09-13 | 2010-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | System in package (SIP) structure |
KR100809726B1 (ko) * | 2007-05-14 | 2008-03-06 | 삼성전자주식회사 | 얼라인 마크, 상기 얼라인 마크를 구비하는 반도체 칩,상기 반도체 칩을 구비하는 반도체 패키지 및 상기 반도체칩과 상기 반도체 패키지의 제조방법들 |
US8759964B2 (en) * | 2007-07-17 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer level package structure and fabrication methods |
TWI358810B (en) * | 2007-10-12 | 2012-02-21 | Chipmos Technologies Inc | Alignment device for a chip package structure |
KR100886720B1 (ko) * | 2007-10-30 | 2009-03-04 | 주식회사 하이닉스반도체 | 적층 반도체 패키지 및 이의 제조 방법 |
TWI375310B (en) * | 2008-05-08 | 2012-10-21 | Powertech Technology Inc | Semiconductor chip having bumps on chip backside, its manufacturing method and its applications |
KR101486423B1 (ko) * | 2008-07-04 | 2015-01-27 | 삼성전자주식회사 | 반도체 패키지 |
WO2010032729A1 (ja) * | 2008-09-18 | 2010-03-25 | 国立大学法人東京大学 | 半導体装置の製造方法 |
KR20120057693A (ko) * | 2010-08-12 | 2012-06-07 | 삼성전자주식회사 | 적층 반도체 장치 및 적층 반도체 장치의 제조 방법 |
TWI533412B (zh) * | 2010-08-13 | 2016-05-11 | 金龍國際公司 | 半導體元件封裝結構及其形成方法 |
JP2012222141A (ja) * | 2011-04-08 | 2012-11-12 | Elpida Memory Inc | 半導体チップ |
US8710654B2 (en) * | 2011-05-26 | 2014-04-29 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
JP5400094B2 (ja) * | 2011-06-02 | 2014-01-29 | 力成科技股▲分▼有限公司 | 半導体パッケージ及びその実装方法 |
KR101906408B1 (ko) * | 2011-10-04 | 2018-10-11 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
-
2013
- 2013-03-25 JP JP2013061230A patent/JP5763116B2/ja active Active
- 2013-08-14 TW TW102129176A patent/TWI512862B/zh active
- 2013-08-19 CN CN201310360706.4A patent/CN104078372B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175263A (ja) * | 2003-12-12 | 2005-06-30 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、電子機器 |
JP2005217071A (ja) * | 2004-01-28 | 2005-08-11 | Nec Electronics Corp | マルチチップ半導体装置用チップ及びその製造方法 |
US20080188036A1 (en) * | 2007-02-07 | 2008-08-07 | La Tulipe Douglas C | Method, system, program product for bonding two circuitry-including substrates and related stage |
WO2011087003A1 (ja) * | 2010-01-15 | 2011-07-21 | 東レエンジニアリング株式会社 | 3次元実装方法および装置 |
WO2013017924A2 (en) * | 2011-08-02 | 2013-02-07 | Soitec | Method for correcting misalignment of positions on a first wafer bonded to a second wafer |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10964671B2 (en) | 2018-07-12 | 2021-03-30 | Toshiba Memory Corporation | Stacked chips comprising interconnects |
US11594521B2 (en) | 2018-07-12 | 2023-02-28 | Kioxia Corporation | Stacked chips comprising interconnects |
JP2020150102A (ja) * | 2019-03-13 | 2020-09-17 | パナソニックIpマネジメント株式会社 | 部品搭載装置および部品搭載方法 |
JP2021027171A (ja) * | 2019-08-05 | 2021-02-22 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
JP7285162B2 (ja) | 2019-08-05 | 2023-06-01 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
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TW201438122A (zh) | 2014-10-01 |
TWI512862B (zh) | 2015-12-11 |
CN104078372B (zh) | 2017-06-06 |
JP5763116B2 (ja) | 2015-08-12 |
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