TWI358810B - Alignment device for a chip package structure - Google Patents

Alignment device for a chip package structure Download PDF

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TWI358810B
TWI358810B TW96138202A TW96138202A TWI358810B TW I358810 B TWI358810 B TW I358810B TW 96138202 A TW96138202 A TW 96138202A TW 96138202 A TW96138202 A TW 96138202A TW I358810 B TWI358810 B TW I358810B
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wafer
alignment
thickness
alignment mark
shape
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TW96138202A
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Chinese (zh)
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TW200917451A (en
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Davide Chen
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Chipmos Technologies Inc
Chipmos Technologies Bermuda
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Description

I35S810 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種對位裝置β更詳細地來說’係關於一種用於 —晶片封裝構造之之對位裝置。 【先前技術】I35S810 IX. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to a aligning device β in more detail with respect to a aligning device for a wafer package construction. [Prior Art]

近年來,隨著半導體製程技術的不斷成熟與發展’各種高效能 的電子產品不斷推陳出新’而積體電路(Integrated Circuit,IC) 晶片之積集度(integration)也不斷提高。積體電路晶片封裝型態 可大致區分為打線接合封裝(Wire Bonding Package)、捲帶自動接 合封裝(Tape Automatic Bonding, TAB)與覆晶接合封裝(Flip Chip Package)等型式,且每種封裝形式均具有其特殊性與應用領域。 相較於傳統打線接合封裝技術,捲帶自動接合封裝具有可縮小晶 片的金屬焊墊間距(Pad Pitch )及薄化等優點。 目前運用於液晶顯示器驅動1C之封裝及行動化電子產品,例 如:筆記型電腦、手機、數位相機等之晶片封駿中,因為可挽性 基板具有動態連結、可撓曲性與薄化的特性,故大量地採用為素 材。而目前可撓性基板與晶片的接合多運用捲帶自動接合(TAB) 封裝技術來達成,其中捲帶自動接合封裝技術又可分成捲帶承載 封裝(Tape Carrier Package,TCP)及薄膜覆晶封| (Chip 〇n Film COF)二種技術。 薄膜覆晶封裝(COF)係以可換性基板上之弓丨腳(by)與晶片 上相對應之凸塊(bump)進行對位加塵接合,以於引腳與凸塊間 5 I35S810 建構一電性連接’俾使晶片之資料可藉由凸塊及5丨腳之連接而與 . 外部電路進行溝通。隨著製程的進步、積體電路密集产提高,引 • 腳及凸塊之尺寸及間距(pitch)也愈來愈小。然而,這亦代表了引腳 及凸塊之對位加壓接合更難以對齊,可容許之對位誤差也將愈趙 嚴格。此外,在加壓接合時;因應力易集中於晶片p 设盖區之角隅, 而造成外側引腳斷裂或剝離(peeling),以致不能遠5丨 %列電性連接,而 使晶片的功能受到影響無法正常運作。是故,若尤% ^ ^ ή 个遵一步改良對 位結構,將嚴重地影響封裝之良率。 魯 ▼ 習知對位技術中,係以人眼透過攝影機進行晶片及可挽性基板 之對位檢視。如第1圖所示’可撓性基板1 〇上具有一曰曰片覆蓋區 10〇,於此以晶片覆蓋區100之各邊均具有引腳為例。晶片覆蓋區 100具有二長邊10〇3與二短邊i〇〇b,於晶片覆蓋區100之二對角 隅(抑或四角隅)各定義一教讀區域104,其涵蓋—長邊1〇〇a之部 分一第一長邊引腳ll〇a與短邊l〇〇b之部分_第一短邊引腳 ll〇b;此外,晶片(圖未示出)亦具有相對應之二長邊與二短邊,而 # 晶片中相對應的角隅亦定義出教讀區域。透過攝影機分別檢視晶 片及可撓性基板100之教讀區域,並取得.各教讀區域之灰階值, 便可進行影像重疊對位。 然而對位時,若第一長邊引腳與第一短邊引腳距離較遠,為使 教讀區域同時包含長邊與短邊之引腳,便需放大教讀區域之範 圍,但此舉卻會使得解析度降低;此外,這種對位技術僅用於長 邊與短邊均具有引腳之可撓性基板,無法完成無短邊引腳之對 位;且若内引腳蝕刻不當導致引腳表面不均勻’亦會影響對位精 6 1358810 度;再者’此技術更無法提供引腳與凸塊對位時偏移量調整之依 . 據或壓合時角隅區域之支撐。 * 綜上所言’習知對位技術不但於使用時處處受限,更無法解決 角隅處應力集中造成外侧引腳斷裂等問題β因此,設計一個新的 對位結構且能同時提供引腳及凸塊在進行壓合時之保護,乃為此 業界所亟待解決的目標。 秦 【發明内容】 本發明之一目的在於提供一種用於一晶片封裝構造之對位裝 置,晶片封裝構造包含一可撓性基板、一導電層及一晶片,可撓 . 性基板具有一晶片覆蓋區,晶片覆蓋區包含一週邊區域。導電層 形成於晶片覆蓋區上,並將週邊區域界定成複數引腳區及複數無 引腳區。晶片係設置於導電層上。對位裝置包含至少一第一對位 私。己及至少一第二對位標記。至少一第一對位標記係形成於晶片 覆蓋區之至少一,隅上,至少一第二對位標記係形成於晶片之一 Φ 主動面。其中,當晶片電性定位於晶片覆蓋區上時,至少一第二 對位標記適可對應至少一第一對位標記。 藉由上述對位裝置,可撓性基板上之引腳及晶片上之凸塊便能 . 精確對位。此外,對位裝置更具有支撐及分散應力之作用,藉以 保護晶片覆蓋區上之外側引腳’不會因為應力集中於角隅處而產 生斷裂或剝離。 在參閱圖式及隨後描述之實施方式後,該技術領域具有通常知 識者便可瞭解本發明之目的,以及本發明之技術手段及實施態樣。 7 1358810 【實施方式】 本發明之第一實施例係為一種用於一晶片封裝構造之對位裝 置。晶片封裝構造2通過引腳及凸塊之剖面圖係如第2A圖所示’ 第2B圖與第2C圖則分別為晶片封裝構造2中’晶片22之仰視圖 與可撓性基板20之俯視圖。In recent years, with the continuous maturity and development of semiconductor process technology, 'a variety of high-performance electronic products are constantly being introduced,' and the integration of integrated circuit (IC) chips has also increased. The integrated circuit chip package type can be roughly classified into a wire bonding package (Wire Bonding Package), a tape automatic bonding (TAB), and a flip chip package (Flip Chip Package), and each package type. Both have their particularity and application areas. Compared to the traditional wire bonding package technology, the tape automatic bonding package has the advantages of reducing the pad pitch and thinning of the wafer. It is currently used in liquid crystal display driver 1C packaging and mobile electronic products, such as notebook computers, mobile phones, digital cameras, etc., because the switchable substrate has dynamic connection, flexibility and thinning characteristics. Therefore, it is widely used as material. At present, the bonding of the flexible substrate to the wafer is mostly achieved by using a tape automated bonding (TAB) packaging technology, wherein the tape automatic bonding and packaging technology can be further divided into a tape carrier package (TCP) and a film overlay package. | (Chip 〇n Film COF) two technologies. The film flip-chip package (COF) is used for the para-dusting bonding of the bumps on the replaceable substrate with the corresponding bumps on the wafer to form the 5 I35S810 between the leads and the bumps. An electrical connection '俾 enables the data of the chip to communicate with the external circuit by means of bumps and 5-pin connections. As the process progresses and the integrated circuit is intensively produced, the size and pitch of the pin and the bump are becoming smaller and smaller. However, this also means that the alignment of the pins and bumps is more difficult to align, and the tolerances that can be tolerated will be more stringent. In addition, during the press bonding, the stress tends to concentrate on the corner 隅 of the cover region of the wafer p, causing the outer pin to be broken or peeled, so that the electrical connection cannot be made far away, and the function of the wafer is made. It is affected and cannot function properly. Therefore, if the %^^ 遵 step by step improves the alignment structure, it will seriously affect the yield of the package. Lu ▼ In the conventional alignment technology, the alignment of the wafer and the slidable substrate is performed by the human eye through the camera. As shown in Fig. 1, the flexible substrate 1 has a cymbal footprint 10 〇, and a pin is provided on each side of the wafer footprint 100 as an example. The wafer footprint 100 has two long sides 10〇3 and two short sides i〇〇b, and two diagonal corners (or four corners) of the wafer coverage area 100 define a teaching area 104, which covers the long side. a portion of the first long side pin ll 〇 a and a short side l 〇〇 b _ first short side pin ll 〇 b; in addition, the wafer (not shown) also has a corresponding length The side and the two short sides, and the corresponding corners in the # wafer also define the teaching area. The image reading area of the wafer and the flexible substrate 100 is separately viewed by the camera, and the gray scale values of the respective teaching areas are obtained, so that the image overlap alignment can be performed. However, if the first long side pin is far away from the first short side pin, the range of the teaching area needs to be enlarged to make the teaching area contain both the long side and the short side pin. This will reduce the resolution; in addition, this alignment technique is only used for flexible substrates with pins on both the long side and the short side, which cannot be aligned without the short side pins; Improper lead to uneven surface of the pin will also affect the alignment of the fine 6 1358810 degrees; in addition, this technology can not provide the offset adjustment of the pin and the bump alignment. support. * In summary, the conventional alignment technology is not only limited in use, but also unable to solve the problem of stress concentration at the corners causing the outer pins to break. Therefore, a new alignment structure is designed and can be provided at the same time. And the protection of the bumps during the pressing is a goal that the industry has to solve. Qin [Invention] It is an object of the present invention to provide a aligning device for a chip package structure, the chip package structure comprising a flexible substrate, a conductive layer and a wafer, the flexible substrate having a wafer cover The area, the wafer footprint includes a peripheral area. A conductive layer is formed on the wafer footprint and defines the peripheral region as a plurality of pin regions and a plurality of pinless regions. The wafer system is disposed on the conductive layer. The aligning device includes at least one first pair of privilege. At least one second alignment mark. At least one first alignment mark is formed on at least one of the wafer footprints, and at least one second alignment mark is formed on one of the wafers Φ active planes. Wherein, when the wafer is electrically positioned on the wafer footprint, the at least one second alignment mark is adapted to correspond to the at least one first alignment mark. With the above-mentioned alignment device, the pins on the flexible substrate and the bumps on the wafer can be accurately aligned. In addition, the alignment device has the function of supporting and dispersing stress, thereby protecting the outer side pins on the wafer footprint from being broken or peeled due to stress concentration at the corners. The objects of the present invention, as well as the technical means and implementations of the present invention, will be apparent to those of ordinary skill in the art. 7 1358810 [Embodiment] A first embodiment of the present invention is a aligning device for a chip package construction. The cross-sectional view of the chip package structure 2 through the leads and the bumps is as shown in FIG. 2A. FIGS. 2B and 2C are respectively a bottom view of the wafer 22 and a plan view of the flexible substrate 20 in the chip package structure 2. .

同時參考第2A圖至第2C圖,晶片封裝構造2包含一可撓性基 板20、一導電層21及一晶片22。可撓性基板20具有一晶片覆蓋 區200,晶片覆蓋區200包含一週邊區域(圖未示出)’於此實施例 中,可撓性基板20係以聚亞醯胺製成,具有高度可撓性’在其他 實施態樣裡,可撓性基板20亦可由聚對苯二甲酸乙二醋 (Polyethylene terephthalate,PET)—類之材料所製成。導電層 21 包 含複數個引腳210,且導電層21係形成於晶片覆蓋區200上’並 將週邊區域界定成四個引腳區204a、204b、204c及204d及四個 無引腳區206a、206b、206c及206d,而該等引腳210即形成於四 個引腳區204a、204b、204c及204d上。晶片22則對位壓合於導 電層21之上,晶片22之一主動面220具有複數凸塊221,藉此對 應電性連接於該等引腳210。 進一步來看,對位裝置包含四個第一對位標記201a、201b、 201c、201d及四個第二對位標記222a、222b、222c、222d。四個 第一對位標記201a、201b、201c及201d係分別形成於晶片覆蓋 區200之四角隅,即四個無引腳區206a、206b、206c及206d上; 四個第二對位標記222a、222b、222c及222d則形成於晶片22之 8 1358810 主動面220。 四個第一對位標記201a、201b、201c及201d及四個第二對位 標記222a、222b、222c及222d之形狀係分別均為卍字形及十字 形。於其他實施態樣中,第一對位標記與第二對位標記亦可自卍 字形、十字形、米字形、T字形、L字形及方形等形狀之群組選出, 或可由其他習知此項技術者可輕易思及之形狀替代,故不限於上 述之形狀。 當晶片22電性定位於晶片覆蓋區200上時,四個第—對位標纪 ^ 201a、201b、201c及201d適可分別對應四個第二對位標記222a、 222b、222c及222d。同樣地,晶片覆蓋區2〇〇與晶片22亦定義 - 有教讀區域。以晶片覆蓋區200而言’其教讀區域即四個無引腳 區206a、206b、?06c及206d ’且各教讀區域中分別包含了第—對 位標記201a、201b、201c及201d ;以晶片22而言,其教讀區域 即為對應於無引腳區206a、206b、206c及206d之四角隅。而上 述之第一對位標記及第二對位標記之形狀係可使該等引腳21〇盘 φ 該等凸塊221進行對位接合時,透過攝影機檢視各個教讀區域, 以各教讀區域之灰階值比對第一對位標記及第二對位標記兩者之 間的相對位置(譬如X方向、y方向及偏移角Θ),藉以判斷兩者是 否接合正確並進行調整,俾使該等引腳210與該等凸塊221之對 位更加精準。對位後,再以機器進行壓合,完成兩者間的電性接 合0 更詳細而言’形成於四個引腳區204a ' 204b、204c及204d上 的該等引腳210具有一第一厚度’而四個第一對位標記201a、 9 1358810 201b、201c及201d具有一第二厚度,第一厚度係與第二厚度實質 上相等,且四個第一對位標記201a、201b、201c及201d與該等 引腳210均係由第一材料構成。此外,於蝕刻製備此實施例之引 腳時,亦同時蝕刻出第一對位標記,換言之,兩者係為同一材料 且同時形成。於本實施例中,第一材料係為銅,須注意的是,於 其他實施態樣中,第一材料並不限於以上所述之銅金屬,其可由 習知此項技術者可輕易思及之其他金屬所構成。Referring also to FIGS. 2A-2C, the chip package structure 2 includes a flexible substrate 20, a conductive layer 21, and a wafer 22. The flexible substrate 20 has a wafer footprint 200, and the wafer footprint 200 includes a peripheral region (not shown). In this embodiment, the flexible substrate 20 is made of polyamine, and has a height. Flexibility In other embodiments, the flexible substrate 20 can also be made of a material such as polyethylene terephthalate (PET). The conductive layer 21 includes a plurality of pins 210, and the conductive layer 21 is formed on the wafer footprint 200 and defines the peripheral regions into four lead regions 204a, 204b, 204c, and 204d and four leadless regions 206a. 206b, 206c, and 206d, and the pins 210 are formed on the four pin regions 204a, 204b, 204c, and 204d. The wafer 22 is aligned on the conductive layer 21, and one of the active faces 220 of the wafer 22 has a plurality of bumps 221, thereby electrically connecting to the pins 210. Further, the alignment device includes four first alignment marks 201a, 201b, 201c, 201d and four second alignment marks 222a, 222b, 222c, 222d. Four first alignment marks 201a, 201b, 201c and 201d are respectively formed on the four corners of the wafer footprint 200, that is, four leadless regions 206a, 206b, 206c and 206d; four second alignment marks 222a 222b, 222c, and 222d are formed on the 8 1358810 active surface 220 of the wafer 22. The shapes of the four first alignment marks 201a, 201b, 201c, and 201d and the four second alignment marks 222a, 222b, 222c, and 222d are each a U shape and a cross shape. In other implementations, the first alignment mark and the second alignment mark may also be selected from the group of shapes such as a 卍 shape, a cross shape, a m shape, a T shape, an L shape, and a square shape, or may be other known The shape can be easily replaced by the skilled person, and is not limited to the above shape. When the wafer 22 is electrically positioned on the wafer footprint 200, the four first-parameters 201a, 201b, 201c, and 201d may correspond to the four second alignment marks 222a, 222b, 222c, and 222d, respectively. Similarly, the wafer footprint 2 and wafer 22 are also defined - with a teach area. In the case of the wafer footprint 200, its teaching area is the four leadless areas 206a, 206b, ? 06c and 206d' and the respective alignment areas 201a, 201b, 201c, and 201d are included in the teaching area; in the case of the wafer 22, the teaching area corresponds to the leadless areas 206a, 206b, and 206c. The four corners of 206d. The shape of the first alignment mark and the second alignment mark are such that when the pins 21 are aligned, the bumps 221 are aligned, and each of the teaching areas is viewed through the camera. The grayscale value of the region compares the relative positions between the first alignment mark and the second alignment mark (such as the X direction, the y direction, and the offset angle Θ) to determine whether the two are properly joined and adjusted. The alignment of the pins 210 with the bumps 221 is more precise. After the alignment, the device is then pressed to complete the electrical bonding between the two. 0 In more detail, the pins 210 formed on the four pin regions 204a' 204b, 204c, and 204d have a first The thickness 'and the four first alignment marks 201a, 9 1358810 201b, 201c, and 201d have a second thickness, the first thickness is substantially equal to the second thickness, and the four first alignment marks 201a, 201b, 201c And 201d and the pins 210 are both made of a first material. Further, when the pins of this embodiment are prepared by etching, the first alignment mark is also etched at the same time, in other words, the two are formed of the same material and simultaneously. In this embodiment, the first material is copper. It should be noted that in other embodiments, the first material is not limited to the copper metal described above, which can be easily considered by those skilled in the art. It is made of other metals.

而於晶片22之主動面220上之該等凸塊221具有一第三厚度, 位於晶片22上之四個第二對位標記222a、222b、222c及222d則 具有一第四厚度,第三厚度係與第四厚度實質上相等,且四個第 二對位標記222a、222b、222c及222d與該等凸塊221係由第二 材料構成。於製備此實施例之凸塊時,亦同時形成第二對位標記, 故兩者係為同一材料且同時形成。於本實施例中,第二材料係為 金,須注意的是,於其他實施態樣中,.第一材料並不限於以上所 述之金金屬,其可由習知此項技術者可輕易思及之其他金屬所構 成。 由於此實施例中,第一對位標記及第二對位標記之厚度分別與 引腳及凸塊之厚度相等,故引腳與凸塊接合時,第一對位標記與 第二對位標記亦同時完成接合,可進一步於晶片22及晶片覆蓋區 200之四角隅提供支撐力,避免壓合時角隅處因應力集中而造成靠 近外側之該等引腳210斷裂或剝離,而降低電性連接短路或斷路 之可能性。 本發明之第二實施例亦為一種用於一晶片封裝構造之對位裝 1358810 置。與前一實施例不同的是,本實施例之晶片封裝構造2中’無 引腳區及對位裝置之數目有所不同,故於此僅特別描述無引腳區 及對位裝置之部分。同時對照第3A圖及第3B圖’其中第3A圖 為本實施例之晶片封裝構造2中晶片22’之仰視圖,第3B圖為本 實施例之晶片封裝構造2中可撓性基板20’之俯視圖。 於本實施例之晶片封裝構造2中,可撓性基板20,具有一晶片覆 盖區200’,晶片覆蓋區200’包含·一週邊區域。週邊區域界疋成四The bumps 221 on the active surface 220 of the wafer 22 have a third thickness, and the four second alignment marks 222a, 222b, 222c and 222d on the wafer 22 have a fourth thickness, a third thickness. The fourth thickness is substantially equal to the fourth thickness, and the four second alignment marks 222a, 222b, 222c, and 222d and the bumps 221 are composed of the second material. When the bump of this embodiment is prepared, the second alignment mark is also formed at the same time, so that both are formed of the same material and simultaneously. In this embodiment, the second material is gold. It should be noted that in other embodiments, the first material is not limited to the above-mentioned gold metal, which can be easily considered by those skilled in the art. And other metals. In this embodiment, the thicknesses of the first alignment mark and the second alignment mark are equal to the thicknesses of the pins and the bumps, respectively, so when the pins are bonded to the bumps, the first alignment mark and the second alignment mark At the same time, the bonding is completed, and the supporting force is further provided in the four corners of the wafer 22 and the wafer covering area 200, so as to avoid breakage or peeling of the pins 210 near the outer side due to stress concentration at the corners during pressing, thereby reducing electrical properties. The possibility of connecting a short circuit or an open circuit. The second embodiment of the present invention is also an alignment device 1358810 for a chip package construction. Different from the previous embodiment, the number of the no-pin regions and the alignment devices in the chip package structure 2 of the present embodiment is different, so only the portion of the leadless region and the alignment device will be specifically described herein. 3A and 3B, wherein FIG. 3A is a bottom view of the wafer 22' in the wafer package structure 2 of the present embodiment, and FIG. 3B is a flexible substrate 20' of the wafer package structure 2 of the present embodiment. Top view. In the wafer package structure 2 of the present embodiment, the flexible substrate 20 has a wafer covering region 200', and the wafer covering region 200' includes a peripheral region. The surrounding area is divided into four

個引腳區204a’、204b,、204c’及204d’及四個無引腳區206a’、 206b’、206c’及206d’,複數引腳210’即形成於四個引腳區204a’、 204b’、204c’及204d,上。而晶片22,之一主動面220,具有複數凸 塊221’,對應電性連接於該等引腳210’。 進一步來看,對位裝置包含兩個第一對位標記201a’、201c,、 及兩個第二對位標記222a,、222c’。兩個第一對位標記201a,、201c, 係分別形成於晶片覆蓋區200,之兩對角隅,即其中之兩個無引腳 區206a’及206c’i ;兩個第二對位標記222a’、222c’則形成於晶 片22’之主動面220,上,與第一對位標記201a’、201c’相對應之位 置》 當晶片22’電性定位於晶片覆蓋區200’上時,兩個第一對位標記 201a’及201c’適可分別對應兩個第二對位標記222a,及222c’。同 樣地’晶片覆蓋區200與晶片22’亦定義有教讀區域。以晶片覆蓋 區200’而言,其教讀區域即無引腳區206a,及206c’,且各教讀區 域中分別包含了第一對位標記201a’及201c’ ;以晶片22,而言,其 教讀區域即為對應於無引腳區206a’及206c’之二角隅。接著,亦 1358810 同樣使賴影驗視各個㈣區域,以各教讀區域之灰階值確認 第-對位標記及第二對位標記之相對位置(譬如χ方向、丫方向及 偏移肖Θ),藉以判斷兩者是否接合正確並進行調整,使弓|腳21〇, 與該等凸塊221,之對位更為精準。對位後,再以機器進行壓合, 完成兩者間的電性接合。 於此實施例中,雖僅將第一對位標記及第二對位標記設置於晶 片及晶片覆蓋區之兩對角隅’但亦可提供對準之機制及足夠之支 鲁推力。須注意的是,第一對位標記及第二對位標記之數目並不限 於上述實_之數目,而可任意增加或減少,並不為上述之數目 所限。第一對位標記與第二對位標記之形狀可相同亦可不同。 - 本發明之第二實施例同樣為一種用於一晶片封裝構造之對位裝 • 置。與前二實施例不同的是,本實施例之晶片封裝構造3之對位 裝置中,第一對位標記與第二對位標記均為較細之線條狀,亦即 本實施例中第一對位標記與第二對位標記之線條遠細於前述各實 • 施例之第一對位標記與第二對位標記《晶片封裝構造3同時通過 0 對位裝置、引腳及凸塊之剖面圖係如第4A圖所示,第4B圖與第 4C圖則分別為晶片封裝構造3中,晶片32之仰視圖與可撓性基 板30之俯視圖。 晶片封裝構造3中’可撓性基板30具有一晶片覆蓋區300,晶 片覆蓋區300包含一週邊區域。週邊區域界定成四個引腳區3〇4a、 304b、304c 及 304d 及四個無引腳區 306a、306b ' 306c 及 306d, 複數引腳310即形成於四個引腳區304a、304b、304c及304d上。 而晶片32之一主動面320具有複數凸塊321,藉此對應電性連接 12 1358810 於該等引腳310。Pin areas 204a', 204b, 204c' and 204d' and four leadless areas 206a', 206b', 206c' and 206d', the plurality of pins 210' are formed in the four pin areas 204a', 204b', 204c' and 204d, on. The wafer 22, one of the active faces 220, has a plurality of bumps 221' correspondingly electrically connected to the pins 210'. Further, the alignment device includes two first alignment marks 201a', 201c, and two second alignment marks 222a, 222c'. Two first alignment marks 201a, 201c are respectively formed on the wafer footprint 200, two diagonal corners, that is, two leadless regions 206a' and 206c'i; two second alignment marks 222a', 222c' are formed on the active surface 220 of the wafer 22', above the first alignment mark 201a', 201c'. When the wafer 22' is electrically positioned on the wafer footprint 200', The two first alignment marks 201a' and 201c' are adapted to correspond to the two second alignment marks 222a, and 222c', respectively. Similarly, the wafer footprint 200 and the wafer 22' are also defined with a teaching area. In the case of the wafer footprint 200', the teaching areas are the lead-free areas 206a, 206c', and the first alignment marks 201a' and 201c' are respectively included in each of the teaching areas; The teaching read area is the two corners corresponding to the leadless areas 206a' and 206c'. Then, 1358810 also makes the image look at each (4) region, and confirms the relative position of the first-alignment mark and the second alignment mark with the gray-scale value of each teaching region (such as the direction of the 丫, the direction of the 及, and the offset ), in order to judge whether the two are correctly connected and adjusted, so that the bow|foot 21〇, and the bumps 221, the alignment is more precise. After the alignment, press the machine to complete the electrical joint between the two. In this embodiment, only the first alignment mark and the second alignment mark are disposed on the two opposite corners of the wafer and the wafer footprint, but the alignment mechanism and the sufficient thrust can be provided. It should be noted that the number of the first alignment mark and the second alignment mark is not limited to the number of the above-mentioned real numbers, and may be arbitrarily increased or decreased, and is not limited to the above number. The shape of the first alignment mark and the second alignment mark may be the same or different. - The second embodiment of the invention is also a aligning device for a wafer package construction. Different from the first embodiment, in the alignment device of the chip package structure 3 of the embodiment, the first alignment mark and the second alignment mark are both thinner lines, that is, the first in the embodiment. The alignment mark and the second alignment mark are far thinner than the first alignment mark and the second alignment mark of the foregoing embodiments. The chip package structure 3 simultaneously passes through the 0 alignment device, the leads and the bumps. The cross-sectional view is as shown in FIG. 4A, and the fourth and fourth C-th views are respectively a top view of the wafer 32 and a plan view of the flexible substrate 30 in the chip package structure 3. In the wafer package construction 3, the flexible substrate 30 has a wafer footprint 300, and the wafer footprint 300 includes a peripheral region. The peripheral region is defined as four pin regions 3〇4a, 304b, 304c, and 304d and four leadless regions 306a, 306b' 306c and 306d, and the plurality of pins 310 are formed in the four pin regions 304a, 304b, and 304c. And on 304d. The active surface 320 of one of the wafers 32 has a plurality of bumps 321 , thereby electrically connecting 12 1358810 to the pins 310 .

進一步來看,對位裝置包含兩個第一對位標記301a、301c及兩 個第二對位標記322a、322c。兩個第一對位標記301a、301c係分 別形成於晶片覆蓋區300之兩對角隅,即其中之兩個無引腳區306a 及306c上;兩個第二對位標記322a、322c則形成於晶片32之主 動面320上,與第一對位標記301a、301c相對應之位置。其中第 一對位標記301a、301c較佳係均以相同製程(譬如蝕刻製程)與引 腳310同時形成,第一對位標記301a、301c之厚度會與引腳310 .之厚度相等。更詳細而言,各引腳310之第一厚度實質上會相當 於第一對位標記301a、301c之第二厚度。另一方面,第二對位標 記322a、322c較佳係與凸塊321同時形成,但由於第二對位標記 322a、322c之線條較細,故於實際製程中,第二對位標記322a、 322c之厚度通常會小於凸塊321之厚度。更詳細而言,各凸塊321 之第三厚度實質上會大於第二對位標記322a、322c之第四厚度。 第一對位標記301a、301c及第二對位標記322a、322c之形狀係 均為米字形之線條形標記,更詳細而言,此米字形之各筆劃寬度 係遠小於前述各實施例。於其他實施態樣中,第一對位標記與第 二對位標記亦可自卍字形、十字形、T字形、L字形及方形等形狀 之群組選出,或可由其他習知此項技術者可輕易思及之形狀替 代,故不限於上述之形狀。 當晶片32電性定位於晶片覆蓋區300上時,兩個第一對位標記 301a及301c適可分別對應兩個第二對位標記322a及322c。同樣 地,晶片覆蓋區300與晶片32亦定義有教讀區域。以晶片覆蓋區 13 1358810 300而言,其教讀區域即無引腳區306a及306c,且各教讀區域中 分別包含了第一對位標記301a及301c ;以晶片32而言,其教讀 區域即為對應於無引腳區306a及306c之二角隅。接著,亦同樣 使用攝影機檢視各個教讀區域,以各教讀區域之灰階值確認第一 對位標記及第二對位標記之偏移量(譬如X方向之偏移量、y方向 之偏移量及偏移角Θ),藉以判斷兩者之相對位置是否正確對準並 進行細部之偏移量調整,使引腳310與該等凸塊321之對位更為 精準。對位後,再以機器進行壓合,完成兩者間的電性接合。Further, the alignment device includes two first alignment marks 301a, 301c and two second alignment marks 322a, 322c. Two first alignment marks 301a, 301c are respectively formed on two diagonal corners of the wafer footprint 300, that is, two of the leadless regions 306a and 306c; two second alignment marks 322a, 322c are formed. On the active surface 320 of the wafer 32, the position corresponding to the first alignment mark 301a, 301c. Preferably, the first pair of bit marks 301a, 301c are formed simultaneously with the pin 310 by the same process (such as an etching process), and the thickness of the first bit mark 301a, 301c is equal to the thickness of the pin 310. In more detail, the first thickness of each of the pins 310 will substantially correspond to the second thickness of the first alignment marks 301a, 301c. On the other hand, the second alignment mark 322a, 322c is preferably formed simultaneously with the bump 321 , but since the lines of the second alignment mark 322a, 322c are thin, in the actual process, the second alignment mark 322a, The thickness of 322c is typically less than the thickness of bump 321 . In more detail, the third thickness of each bump 321 is substantially greater than the fourth thickness of the second alignment mark 322a, 322c. The shapes of the first alignment marks 301a, 301c and the second alignment marks 322a, 322c are all line-shaped marks of a m-shaped shape. More specifically, the stroke width of the rice-shaped shape is much smaller than that of the foregoing embodiments. In other implementations, the first alignment mark and the second alignment mark may also be selected from the group of shapes such as a chevron, a cross, a T, an L, and a square, or may be used by other known techniques. The shape can be easily replaced, so it is not limited to the above shape. When the wafer 32 is electrically positioned on the wafer footprint 300, the two first alignment marks 301a and 301c may correspond to the two second alignment marks 322a and 322c, respectively. Similarly, wafer footprint 300 and wafer 32 are also defined with a read area. In the case of the wafer footprint 13 1358810 300, the teaching areas are the lead-free areas 306a and 306c, and the first alignment marks 301a and 301c are respectively included in the teaching area; for the wafer 32, the teaching is performed. The area is the two corners corresponding to the leadless areas 306a and 306c. Then, the camera is also used to view each of the teaching areas, and the offset values of the first and second alignment marks are confirmed by the grayscale values of the teaching areas (for example, the offset in the X direction and the deviation in the y direction). The shift amount and the offset angle Θ) are used to judge whether the relative positions of the two are correctly aligned and perform the offset adjustment of the details, so that the alignment of the pins 310 and the bumps 321 is more accurate. After the alignment, press the machine to complete the electrical joint between the two.

於此實施例中,第一對位標記及第二對位標記僅設置於晶片及 晶片覆蓋區之兩對角隅,即可提供對準之機制,更詳細而言,因 其線條形之特性,在以攝影機檢視校讀區域時,可作為快速微調 之依據。須注意的是,第一對位標記及第二對位標記之數目並不 限於上述實施例之數目,而可任意增加或減少,並不為上述之數 目所限。此外,於其他實施態樣中,第一對位標記與第二對位標 記之形狀可相同亦可不同。 由上述各實施例可知,本發明藉由上述用於一晶片封裝構造且 分別設置於晶片上及可撓性基板上之對位裝置,能夠使可撓性基 板上之引腳及晶片上之凸塊在進行對位時,能精確地對準,並不 受限於長邊上之引腳與短邊上之引腳的距離,更可適用於僅於長 邊(或僅於短邊)具有引腳之情況。此外,本發明第一實施例與第二 實施例所述之對位裝置更可提供一支撐及分散應力之作用,藉以 保護靠近角隅之引腳及凸塊,不因壓合時角隅處應力集中而受損。 上述之實施例僅用來例舉本發明之實施態樣,以及闡述本發明 14 1358810 之技術特徵,並非用來限制本發明之範疇。任何熟悉此技術者可 輕易完成之改變或均等性之安排均屬於本發明所主張之範圍,本 發明之權利範圍應以申請專利範圍為準。 【圖式簡單說明】 第1圖係為習知技術之晶片封裝構造中,可撓性基板之俯視圖; 第2A圖係為本發明第一實施例之晶片封裝構造之剖面圖;In this embodiment, the first alignment mark and the second alignment mark are disposed only on two diagonal corners of the wafer and the wafer coverage area, thereby providing an alignment mechanism, and more specifically, due to the shape of the line shape. It can be used as a basis for rapid fine-tuning when viewing the school reading area with a camera. It should be noted that the number of the first aligning mark and the second aligning mark is not limited to the number of the above embodiments, and may be arbitrarily increased or decreased, and is not limited to the above. In addition, in other implementations, the shapes of the first alignment mark and the second alignment mark may be the same or different. It can be seen from the above embodiments that the present invention can be used for the pin on the flexible substrate and the bump on the wafer by the above-mentioned alignment device for a chip package structure and respectively disposed on the wafer and the flexible substrate. When the block is aligned, it can be precisely aligned, and is not limited to the distance between the pin on the long side and the pin on the short side, and is more applicable to only the long side (or only the short side). The case of the pin. In addition, the alignment device according to the first embodiment and the second embodiment of the present invention can provide a supporting and dispersing stress, thereby protecting the pins and the bumps near the corners, and not at the corners of the pressing. Stress is concentrated and damaged. The above-described embodiments are only intended to illustrate the embodiments of the present invention, and to illustrate the technical features of the present invention 14 1358810, and are not intended to limit the scope of the present invention. Any change or singularity that can be easily accomplished by those skilled in the art is within the scope of the invention, and the scope of the invention should be determined by the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view of a flexible substrate in a chip package structure of a prior art; FIG. 2A is a cross-sectional view showing a chip package structure according to a first embodiment of the present invention;

第2B圖係為本發明第一實施例之晶片封裝構造中,晶片之仰視 圖; 第2C圖係為本發明第一實施例之晶片封裝構造中,可撓性基板 之俯視圖; 第3A圖係為本發明第二實施例之晶片封裝構造中,晶片之仰視 圖, 第3B圖係為本發明第二實施例之晶片封裝構造中,可撓性基板 之俯視圖 第4A圖係為本發明第三實施例之晶片封裝構造之剖面圖; 第4B圖係為本發明第三實施例之晶片封裝構造中,晶片之仰視 圖;以及 第4C圖係為本發明第三實施例之晶片封裝構造中,可撓性基板 之俯視圖。 【主要元件符號說明】 10 :可撓性基板 15 1358810 100 :晶片覆蓋區 100a :長邊 100b :短邊 104 :教讀區域 110a ··第一長邊引腳 110b :第一短邊引腳 2 .晶片封裝構造2B is a bottom view of the wafer in the wafer package structure according to the first embodiment of the present invention; FIG. 2C is a plan view of the flexible substrate in the chip package structure according to the first embodiment of the present invention; In the wafer package structure of the second embodiment of the present invention, a bottom view of the wafer, and FIG. 3B is a wafer package structure according to a second embodiment of the present invention. FIG. 4A is a plan view of the flexible substrate. FIG. 4B is a bottom view of a wafer in a wafer package structure according to a third embodiment of the present invention; and FIG. 4C is a wafer package structure according to a third embodiment of the present invention, Top view of the flexible substrate. [Description of main component symbols] 10: Flexible substrate 15 1358810 100: Wafer footprint 100a: Long side 100b: Short side 104: Teaching area 110a · First long side pin 110b: First short side pin 2 Chip package construction

20 :可撓性基板 20’ :可撓性基板 200 :晶片覆蓋區 200’ :晶片覆蓋區20: Flexible substrate 20': Flexible substrate 200: Wafer coverage area 200': Wafer coverage area

201a、201b、201c、201d :第一對位標記 201a’、201c’ :第一對位標記 204a、204b、204c、204d :,引腳區 204a’、204b’、204c’、204d’ :引腳區 206a、206b、206c、206d :無引腳區 206a’、206b’、206c’、206d’ :無引腳區 21 :導電層 210 :引腳 210’ :引腳 22 :晶片 22’ :晶片 220 :主動面 16 1358810 220’ :主動面 222a、222b、222c、222d :第二對位標記 222a’、222c’ :第二對位標記 221 :凸塊 221’ :凸塊 3:晶片封裝構造 30 :可撓性基板 300 :晶片覆蓋區201a, 201b, 201c, 201d: first alignment mark 201a', 201c': first alignment mark 204a, 204b, 204c, 204d:, pin area 204a', 204b', 204c', 204d': pin Areas 206a, 206b, 206c, 206d: leadless areas 206a', 206b', 206c', 206d': leadless area 21: conductive layer 210: pin 210': pin 22: wafer 22': wafer 220 Active surface 16 1358810 220': active surface 222a, 222b, 222c, 222d: second alignment mark 222a', 222c': second alignment mark 221: bump 221': bump 3: wafer package construction 30: Flexible substrate 300: wafer footprint

301a、301c :第一對位標記 304a、304b、304c、304d :引腳區 306a、306b、306c、306d :無引腳區 310 :引腳 32 :晶片 320 :主動面 321 :凸塊301a, 301c: first alignment mark 304a, 304b, 304c, 304d: pin area 306a, 306b, 306c, 306d: leadless area 310: pin 32: wafer 320: active surface 321 : bump

322a、322c :第二對位標記 17322a, 322c: second alignment mark 17

Claims (1)

1358810 ,. EJnf 第096138202號專利申請i 申請專利範圍替換本(無劃線版本,丨〇〇年8頁' * 十、申請專利範圍: 1. 一種用於一晶片封裝構造之對位裝置,該晶片封裝構造包含: 一可撓性基板,具有一晶片覆蓋區,該晶片覆蓋區包含 一週邊區域; 一導電層,形成於該晶片覆蓋區上,並將該週邊區域界 定成複數引腳區及複數無引腳區; 一晶片,設置於該導電層上; 該對位裝置包含: ® 至少一第一對位標記,係形成於該晶片覆蓋區之至少一 角隅之該等無引腳區之至少其中之一上;以及 至少一第二對位標記,係形成於該晶片之一主動面, 其中,當該晶片電性定位於該晶片覆蓋區上時,該至少 一第二對位標記適可對應該至少一第一對位標記。 2. 如請求項1所述之對位裝置,其中該導電層包含複數個引腳及 該至少一第一對位標記。 φ 3.如請求項2所述之對位裝置,其中該複數無引腳區包含二無引 腳區,該等無引腳區分別形成於該晶片覆蓋區之二對角隅; 該對位裝置包含二第一對位標記及二第二對位標記,該二第 一對位標記分別形成於該等無引腳區上,當該晶片電性定位 於該晶片覆蓋區上時,該等第二對位標記適可對應該等第一 對位標記。 4.如請求項1所述之對位裝置,其中各該引腳區形成有複數引 腳,各該引腳具有一第一厚度,該至少一第一對位標記具有 18 1358810 一第二厚度,該第一厚度係與該第二厚度實質上相等。 5. 如請求項1所述之對位裝置,其中各該引腳區形成有複數引 腳,各該引腳具有一第一厚度,該至少一第一對位標記具有 一第二厚度,該第一厚度係實質上大於該第二厚度。 6. 如請求項1所述之對位裝置,其中該晶片之該主動面具有複數 凸塊,對應電性連接於該複數引腳,各該凸塊具有一第三厚 度,且該至少一第二對位標記具有一第四厚度,該第三厚度 係與該第四厚度實質上相等。 7. 如請求項1所述之對位裝置,其中該晶片之該主動面具有複數 凸塊,對應電性連接於該複數引腳,各該凸塊具有一第三厚 度,且該至少一第二對位標記具有一第四厚度,該第三厚度 係實質上大於該第四厚度。 8. 如請求項4所述之對位裝置,其中該至少一第一對位標記與該 些引腳,係由相同之一第一材料所形成。 9. 如請求項8所述之對位裝置,其中該第一材料為銅。 10. 如請求項6所述之對位裝置,其中該至少一第二對位標記與該 些凸塊,係由相同之一第二材料所形成。 11. 如請求項10所述之對位裝置,其中該第二材料為金。 12. 如請求項1所述之對位裝置,其中該至少一第一對位標記之形 狀係由卍字形、十字形、米字形、T字形、L字形及方形等形 狀群組中選出。 13. 如請求項1所述之對位裝置,其中該至少一第二對位標記之形 狀係為卍字形、十字形、米字形、T字形、L字形及方形等形 19 1358810 狀群組中選出。1358810,. EJnf Patent Application No. 096138202 i Patent Application Range Replacement (no-line version, 8 pages of the following year) * X. Patent application scope: 1. A registration device for a chip package structure, The chip package structure comprises: a flexible substrate having a wafer footprint, the wafer footprint comprising a peripheral region; a conductive layer formed on the wafer footprint and defining the peripheral region as a plurality of pin regions and a plurality of lead-free regions; a wafer disposed on the conductive layer; the alignment device comprising: ® at least a first alignment mark formed in the lead-free region of at least one corner of the wafer footprint And at least one second alignment mark is formed on one active surface of the wafer, wherein the at least one second alignment mark is suitable when the wafer is electrically positioned on the wafer coverage area 2. The alignment device according to claim 1, wherein the conductive layer comprises a plurality of pins and the at least one first alignment mark. φ 3. As claimed in claim 2 Place The alignment device, wherein the plurality of leadless regions comprise two leadless regions, wherein the leadless regions are respectively formed at two diagonal corners of the wafer coverage area; the alignment device includes two first alignment marks and And a second alignment mark, wherein the two first alignment marks are respectively formed on the lead-free areas, and when the wafer is electrically positioned on the wafer coverage area, the second alignment marks are adapted to correspond to 4. The alignment device according to claim 1, wherein each of the pin regions is formed with a plurality of pins, each of the pins having a first thickness, the at least one first alignment mark The first thickness is substantially equal to the second thickness, and the first thickness is substantially equal to the second thickness. 5. The alignment device of claim 1, wherein each of the pin regions is formed with a plurality of pins, each of the leads The foot has a first thickness, and the at least one first alignment mark has a second thickness, the first thickness being substantially greater than the second thickness. 6. The alignment device of claim 1, wherein the wafer The active surface has a plurality of bumps corresponding to the electrical connection Each of the bumps has a third thickness, and the at least one second alignment mark has a fourth thickness, the third thickness being substantially equal to the fourth thickness. 7. The pair of claim 1 The bit device, wherein the active surface of the wafer has a plurality of bumps correspondingly electrically connected to the plurality of pins, each of the bumps has a third thickness, and the at least one second alignment mark has a fourth thickness. The third thickness is substantially greater than the fourth thickness. 8. The alignment device of claim 4, wherein the at least one first alignment mark and the pins are the same one of the first materials 9. The alignment device of claim 8, wherein the first material is copper. 10. The alignment device of claim 6, wherein the at least one second alignment mark and the bumps , formed by one of the same second materials. 11. The alignment device of claim 10, wherein the second material is gold. 12. The alignment device of claim 1, wherein the shape of the at least one first alignment mark is selected from the group consisting of a U shape, a cross shape, a m shape, a T shape, an L shape, and a square shape. 13. The alignment device according to claim 1, wherein the shape of the at least one second alignment mark is a U-shape, a cross, a m-shape, a T-shape, an L-shape, and a square shape. Elected.
TW96138202A 2007-10-12 2007-10-12 Alignment device for a chip package structure TWI358810B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512862B (en) * 2013-03-25 2015-12-11 Toshiba Kk Manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512862B (en) * 2013-03-25 2015-12-11 Toshiba Kk Manufacturing method of semiconductor device

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