JP2014179611A - パワーオーバーレイ構造およびその製造方法 - Google Patents
パワーオーバーレイ構造およびその製造方法 Download PDFInfo
- Publication number
- JP2014179611A JP2014179611A JP2014048289A JP2014048289A JP2014179611A JP 2014179611 A JP2014179611 A JP 2014179611A JP 2014048289 A JP2014048289 A JP 2014048289A JP 2014048289 A JP2014048289 A JP 2014048289A JP 2014179611 A JP2014179611 A JP 2014179611A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- conductive
- thermal interface
- coupled
- pol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】パワーオーバーレイ(POL)構造のPOLサブモジュールは、誘電層と、誘電層に付着された上面を有する半導体デバイスとを含む。半導体デバイスの上面は、その上に少なくとも1つのコンタクトパッドが形成されている。POLサブモジュールは、また、誘電層を通って延び半導体デバイスの少なくとも1つのコンタクトパッドに電気的に結合されている金属配線構造を含む。導電性シムが半導体デバイスの底面に結合されていて、サーマルインターフェースの第1の側が導電性シムに結合されている。ヒートシンクが、電気絶縁性のサーマルインターフェースの第2の側に結合されている。
【選択図】図1
Description
12 パワー半導体デバイス
14 誘電層
16 接着剤
18 金属配線
22 ヒートシンク
24 DBC基板
26 セラミック基板
28 上側シート
30 下側シート
32 はんだ
34 誘電性有機材料
36 POLサブモジュール
38 サーマルパッドまたはサーマルグリース
40 POL構造
42 POLサブモジュール
43 半導体デバイス
44 半導体デバイス
45 半導体デバイス
46 追加的な回路構成部品
48 誘電層
50 接着層
52 配線構造
54 金属配線
56 バイア
58 コンタクトパッド
60 導電性シム
62 導電性コンタクト層
64 誘電性フィラ材料
66 ヒートシンク
68 サーマルインターフェース層
70 入力−出力(I/O)接続
72 ボールグリッドアレイ(BGA)はんだバンプ
74 はんだマスク層
76 別の実施形態によるPOL構造
78 別の実施形態によるPOLサブモジュール
80 多層サーマルインターフェース
82 第1のサーマルインターフェース層
84 セラミック絶縁層
86 第2のサーマルインターフェース層
88 離散的パッド
90 横方向の空間
92 POLアセンブリ
94 外部回路構成部品
96 半導体デバイスの上面
98 誘電層の上面
100 半導体デバイスの底面
102 導電性シムの底面
104 誘電性フィラ材料の一部
106 導電性シムの上面
108 誘電性フィラ材料の上面
110 サーマルインターフェースの第1の側
112 サーマルインターフェース
114 リード
116 サーマルインターフェースの第2の側
118 POLサブモジュール
120 導電性シム
122 リードフレーム
124 POLサブモジュール
126 半導体デバイス
128 半導体デバイス
130 ステップ状の構成を有する導電性シム
132 導電性シムの第1の部分
134 第1の高さまたは厚さ
136 導電性シムの第2の部分
138 第2の高さまたは厚さ
140 導電性シムの平坦な上面
142 第1の導電性シム
144 第1の導電性コンタクト層
146 第1の導電性シムの上面
148 半導体デバイスの上面
150 第2の導電性コンタクト層
152 第2の導電性シム
Claims (40)
- 誘電層、
前記誘電層に付着されており、少なくとも1つのコンタクトパッドがその上に形成されている上面を有する半導体デバイス、
前記誘電層を通って延び、前記半導体デバイスの前記少なくとも1つのコンタクトパッドに電気的に結合されている金属配線構造、
前記半導体デバイスの底面に結合された導電性シム、および
前記導電性シムに結合された第1の側を有するサーマルインターフェース
を備えているPOLサブモジュールと、
前記電気絶縁性のサーマルインターフェースの第2の側に結合されたヒートシンクと
を備えているパワーオーバーレイ(POL)構造。 - 前記サーマルインターフェースが熱伝導性である、請求項1記載のPOL構造。
- 前記誘電層と前記サーマルインターフェースとの間の空間において前記半導体デバイスと前記導電性シムとの周囲に位置決めされたカプセル封じ手段を更に備えている、請求項1記載のPOL構造。
- 前記サーマルインターフェースが、間に位置決めされたDBC基板を除いて、前記導電性シムに結合されている、請求項1記載のPOL構造。
- 前記導電性シムが銅、モリブデン、およびアルミニウムのうちの少なくとも1つを含む、請求項1記載のPOL構造。
- 前記半導体デバイスと前記導電性シムとの間に位置決めされており前記導電性シムを前記半導体デバイスに固定するはんだ材料、導電性接着剤、および焼結銀層のうちの1つを更に備えている、請求項1記載のPOL構造。
- プリント回路板を更に備えており、前記POLサブモジュールは入力/出力接続によって前記プリント回路板に取り付けられている、請求項1記載のPOL構造。
- 前記POLサブモジュールに電気的に結合されたリードフレームを更に備えており、
前記リードフレームが前記導電性シムに直接に取り付けられている、請求項1記載のPOL構造。 - パワーオーバーレイ(POL)構造を形成する方法であって、
半導体デバイスを用意するステップと、
前記半導体デバイスの第1の表面を誘電層に付着させるステップと、
前記誘電層を通るバイアを形成するステップと、
前記誘電層における前記バイアを通って延び、前記半導体デバイスと電気的に接続する金属配線構造を形成するステップと、
導電性シムの第1の表面を前記半導体デバイスの第2の表面に付着させるステップと、
前記導電性シムの第2の表面の上にサーマルインターフェースを形成するステップと、
ヒートシンクを前記導電性シムに、前記ヒートシンクと前記導電性シムとの間に位置決めされたDBC基板を除いて、熱的に結合させるステップと、
を含む方法。 - 前記サーマルインターフェースを形成する前に、ポリマー成型化合物を用いて前記半導体デバイスと前記導電性シムの少なくとも一部とをカプセル封じするステップを更に含む、請求項9記載の方法。
- 前記誘電層と前記サーマルインターフェースとの間にアンダーフィルを適用して前記半導体デバイスと前記導電性シムの少なくとも一部とをカプセル封じするステップを更に含む、請求項9記載の方法。
- 前記サーマルインターフェースを形成するステップが、熱伝導性液体か熱伝導性ペーストの一方を用いて前記導電性シムの前記第1の上面をコーティングするステップを含む、請求項9記載の方法。
- 前記サーマルインターフェースを硬化させるステップを更に含む、請求項12記載の方法。
- 導電性ペーストを用いて、前記導電性シムの前記第1の表面を前記半導体デバイスの前記第2の表面に付着させるステップを更に含む、請求項9記載の方法。
- 前記金属配線構造を外部回路構造に取り付けるステップを更に含む、請求項9記載の方法。
- 前記導電性シムに結合されたリードフレームアセンブリを用意するステップを更に含み、前記リードフレームが前記POL構造と外部回路構造との間に配線を形成する、請求項9記載の方法。
- 誘電層、
前記誘電層に取り付けられている第1の半導体デバイス、
前記第1の半導体デバイスの第1の側に電気的に結合された配線構造であって、前記誘電層を通って延び、前記第1の半導体デバイスの上の少なくとも1つのコンタクトパッドに電気的に接続する配線構造、
前記第1の半導体デバイスの第2の側に結合された底面を有する第1の導電性シム、および
間に位置決めされているDBC基板を除いて、前記第1の導電性シムの上面に結合されたサーマルインターフェース
を備えているPOLサブモジュールと、
前記サーマルインターフェースに直接結合されたヒートシンクと
を備えているパワーオーバーレイ(POL)パッケージング構造。 - 前記第1の導電性シムが銅を含む、請求項17記載のPOLパッケージング構造。
- 前記第1の半導体デバイスと前記第1の導電性シムの少なくとも一部とを包囲するフィラ材料を更に備えている、請求項17記載のPOLパッケージング構造。
- 前記誘電層に取り付けられた第1の側を有する第2の半導体デバイスを更に備えている、請求項17記載のPOLパッケージング構造。
- 前記第1の導電性シムの前記底側が前記第2の半導体デバイスの第2の側に結合されている、請求項20記載のPOLパッケージング構造。
- 前記第2の半導体デバイスが、前記第1の半導体デバイスの垂直方向の高さと異なる垂直方向の高さを有し、
前記第1の導電性シムの第1の部分が前記第1の半導体デバイスに結合されており、
前記第1の導電性シムの第2の部分が前記第2の半導体デバイスに結合されており、
前記第1の導電性シムの前記第1の部分と前記第1の半導体デバイスとの全体的な垂直方向の高さが、前記第1の導電性シムの前記第2の部分と前記第2の半導体デバイスとの全体的な垂直方向の高さとが実質的に等しい、請求項21記載のPOLパッケージング構造。 - 前記第2の半導体デバイスに結合された底面を有する第2の導電性シムを更に備えている、請求項20記載のPOLパッケージング構造。
- プリント回路板と、
前記第1の導電性シムに結合されており、前記POLサブモジュールを前記プリント回路板に電気的に接続するように構成されているリードフレームと、
を更に備えている、請求項20記載のPOLパッケージング構造。 - 第1の半導体デバイスと、
前記第1の半導体デバイスの厚さよりも大きな厚さを有する第2の半導体デバイスと、
前記第1および第2の半導体デバイスの第1の表面に結合された絶縁基板と、
前記絶縁基板を通って延び、前記第1および第2の半導体デバイスのコンタクトパッドに結合された第1の表面を有するメタライゼーション層と、
導電性コンタクト層を経由して前記第1の半導体デバイスに結合された第1の側を有する第1の導電性シムと、
前記導電性コンタクト層を経由して前記第1の半導体デバイスに結合された第1の側を有する第2の導電性シムと、を備えており、
前記第1の導電性シムは、前記第2の導電性シムの厚さよりも大きな厚さを有し、
前記第1および第2の導電性シムの第2の側は同一平面上にある、半導体デバイスパッケージ。 - 前記第1の導電性シムの第2の側と前記第2の導電性シムの第2の側とに結合されたサーマルインターフェース層を更に備えている、請求項25記載の半導体デバイスパッケージ。
- 前記サーマルインターフェース層が電気絶縁性であり熱導電性である、請求項26記載の半導体デバイスパッケージ。
- 前記サーマルインターフェース層が導電性であり熱導電性である、請求項26記載の半導体デバイスパッケージ。
- 前記サーマルインターフェース層が樹脂のマトリクスに浮遊された複数の導電性ファイバを含む、請求項26記載の半導体デバイスパッケージ。
- 前記サーマルインターフェース層の第1の部分が前記第1の導電性シムに結合され、前記サーマルインターフェース層の第2の部分が前記第2の導電性シムに結合され、
前記サーマルインターフェース層の前記第1の部分と前記第2の部分との間にギャップが形成されており、前記サーマルインターフェース層の前記第1の部分が前記サーマルインターフェース層の前記第2の部分から電気的に分離されている、請求項26記載の半導体デバイスパッケージ。 - 前記サーマルインターフェース層が多層基板を含み、前記多層基板が、
前記第1および第2の導電性シムに直接結合された第1の側を有する電気絶縁性で熱伝導性の材料を含む第1のサーマルインターフェース層と、
前記第1のサーマルインターフェース層の第2の側に直接結合された第1の側を有するセラミック基板と、
前記セラミック基板の第2の側に直接結合された電気絶縁性で熱伝導性の材料を含む第2のサーマルインターフェース層と、
を含む、請求項26記載の半導体デバイスパッケージ。 - 前記サーマルインターフェース層が多層基板を含み、前記多層基板が、
前記第1および第2の導電性シムに直接結合された第1の側を有する電気絶縁性で熱伝導性の材料を含む第1のサーマルインターフェース層と、
前記第1のサーマルインターフェース層の第2の側に直接結合された第1の側を有するセラミック基板と、
前記セラミック基板の第2の側に直接結合された導電性で熱伝導性の材料を含む第2のサーマルインターフェース層と、
を含む、請求項26記載の半導体デバイスパッケージ。 - 複数のバイアがそこを通って形成された誘電層と、
前記誘電層の上面に結合された第1の表面を有する半導体デバイスと、
前記誘電層の底面に結合されており、前記誘電層の前記複数のバイアを通って延び、前記半導体デバイスの前記第1の表面に接続する金属配線構造と、
前記半導体デバイスの第2の表面に結合された底面を有する導電性シムと、
この有機サーマルインターフェースと前記導電性シムとの間に位置決めされたDBC基板を除き、前記導電性シムの上面に結合された有機サーマルインターフェースと、
を備えている半導体デバイスパッケージ。 - 前記有機サーマルインターフェースが熱伝導性であり導電性である、請求項33記載の半導体デバイスパッケージ。
- 前記有機サーマルインターフェースが熱伝導性であり電気絶縁性である、請求項33記載の半導体デバイスパッケージ。
- 前記有機サーマルインターフェースが樹脂のマトリクスに浮遊された複数の導電性ファイバを含む、請求項33記載の半導体デバイスパッケージ。
- 前記誘電層と前記サーマルインターフェースとの間に位置する絶縁性アンダーフィル材料を更に備えている、請求項33記載の半導体デバイスパッケージ。
- 前記導電性シムが熱伝導性で導電性の材料を含む、請求項33記載の半導体デバイスパッケージ。
- 前記有機サーマルインターフェース層が多層基板を含み、前記多層基板が、
前記導電性シムに結合された第1の側を有する有機材料を含む第1の層と、
前記第1の層の第2の側に直接結合された第1の側を有するセラミック基板と、
前記セラミック基板の第2の側に直接結合された電気絶縁性で熱伝導性の材料を含む第2の層と、
を含む、請求項33記載の半導体デバイスパッケージ。 - 前記有機サーマルインターフェース層が多層基板を含み、前記多層基板が、
前記導電性シムに結合された第1の側を有する有機材料を含む第1の層と、
前記第1の層の第2の側に直接結合された第1の側を有するセラミック基板と、
前記セラミック基板の第2の側に直接結合された導電性で熱伝導性の材料を含む第2の層と、
を含む、請求項33記載の半導体デバイスパッケージ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361784834P | 2013-03-14 | 2013-03-14 | |
US61/784,834 | 2013-03-14 | ||
US13/897,638 | 2013-05-20 | ||
US13/897,638 US8987876B2 (en) | 2013-03-14 | 2013-05-20 | Power overlay structure and method of making same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014179611A true JP2014179611A (ja) | 2014-09-25 |
JP2014179611A5 JP2014179611A5 (ja) | 2017-03-30 |
JP6595158B2 JP6595158B2 (ja) | 2019-10-23 |
Family
ID=50390992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014048289A Active JP6595158B2 (ja) | 2013-03-14 | 2014-03-12 | パワーオーバーレイ構造およびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US8987876B2 (ja) |
EP (1) | EP2779230B1 (ja) |
JP (1) | JP6595158B2 (ja) |
KR (1) | KR102151047B1 (ja) |
CN (2) | CN111508912B (ja) |
TW (2) | TWI628750B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017059606A (ja) * | 2015-09-15 | 2017-03-23 | トヨタ自動車株式会社 | 半導体装置 |
JP2018049938A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社東芝 | 半導体装置 |
JP2018063994A (ja) * | 2016-10-11 | 2018-04-19 | トヨタ自動車株式会社 | 半導体冷却装置 |
WO2018164160A1 (ja) * | 2017-03-10 | 2018-09-13 | 株式会社村田製作所 | モジュール |
WO2023026511A1 (ja) * | 2021-08-25 | 2023-03-02 | キオクシア株式会社 | 半導体装置及び電子機器 |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11445617B2 (en) | 2011-10-31 | 2022-09-13 | Unimicron Technology Corp. | Package structure and manufacturing method thereof |
US8987876B2 (en) * | 2013-03-14 | 2015-03-24 | General Electric Company | Power overlay structure and method of making same |
US10269688B2 (en) | 2013-03-14 | 2019-04-23 | General Electric Company | Power overlay structure and method of making same |
US9312231B2 (en) * | 2013-10-31 | 2016-04-12 | Freescale Semiconductor, Inc. | Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process |
HUE052682T2 (hu) | 2013-11-05 | 2021-05-28 | Neograf Solutions Llc | Grafit árucikk |
US9576930B2 (en) * | 2013-11-08 | 2017-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive structure for heat dissipation in semiconductor packages |
US9960099B2 (en) * | 2013-11-11 | 2018-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive molding compound structure for heat dissipation in semiconductor packages |
US10510707B2 (en) | 2013-11-11 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive molding compound structure for heat dissipation in semiconductor packages |
JP6337957B2 (ja) * | 2014-03-19 | 2018-06-06 | 富士電機株式会社 | 半導体モジュールユニットおよび半導体モジュール |
US9425114B2 (en) * | 2014-03-28 | 2016-08-23 | Oracle International Corporation | Flip chip packages |
US9613843B2 (en) | 2014-10-13 | 2017-04-04 | General Electric Company | Power overlay structure having wirebonds and method of manufacturing same |
US9698116B2 (en) | 2014-10-31 | 2017-07-04 | Nxp Usa, Inc. | Thick-silver layer interface for a semiconductor die and corresponding thermal layer |
JP2016225413A (ja) * | 2015-05-28 | 2016-12-28 | 株式会社ジェイテクト | 半導体モジュール |
JP6418126B2 (ja) * | 2015-10-09 | 2018-11-07 | 三菱電機株式会社 | 半導体装置 |
JP6323622B2 (ja) | 2015-11-05 | 2018-05-16 | 株式会社村田製作所 | 部品実装基板 |
US10773952B2 (en) | 2016-05-20 | 2020-09-15 | Qorvo Us, Inc. | Wafer-level package with enhanced performance |
US10784149B2 (en) | 2016-05-20 | 2020-09-22 | Qorvo Us, Inc. | Air-cavity module with enhanced device isolation |
US10182514B2 (en) * | 2016-06-27 | 2019-01-15 | International Business Machines Corporation | Thermal interface material structures |
CN116884928A (zh) | 2016-08-12 | 2023-10-13 | Qorvo美国公司 | 具有增强性能的晶片级封装 |
US10109502B2 (en) | 2016-09-12 | 2018-10-23 | Qorvo Us, Inc. | Semiconductor package with reduced parasitic coupling effects and process for making the same |
US10312194B2 (en) | 2016-11-04 | 2019-06-04 | General Electric Company | Stacked electronics package and method of manufacturing thereof |
US9966371B1 (en) | 2016-11-04 | 2018-05-08 | General Electric Company | Electronics package having a multi-thickness conductor layer and method of manufacturing thereof |
US20180130731A1 (en) * | 2016-11-04 | 2018-05-10 | General Electric Company | Electronics package having a multi-thickness conductor layer and method of manufacturing thereof |
US10700035B2 (en) | 2016-11-04 | 2020-06-30 | General Electric Company | Stacked electronics package and method of manufacturing thereof |
US9966361B1 (en) | 2016-11-04 | 2018-05-08 | General Electric Company | Electronics package having a multi-thickness conductor layer and method of manufacturing thereof |
US10749518B2 (en) | 2016-11-18 | 2020-08-18 | Qorvo Us, Inc. | Stacked field-effect transistor switch |
US10224268B1 (en) | 2016-11-28 | 2019-03-05 | CoolStar Technology, Inc. | Enhanced thermal transfer in a semiconductor structure |
US10068831B2 (en) | 2016-12-09 | 2018-09-04 | Qorvo Us, Inc. | Thermally enhanced semiconductor package and process for making the same |
US9953917B1 (en) | 2016-12-12 | 2018-04-24 | General Electric Company | Electronics package with embedded through-connect and resistor structure and method of manufacturing thereof |
US9953913B1 (en) | 2016-12-12 | 2018-04-24 | General Electric Company | Electronics package with embedded through-connect structure and method of manufacturing thereof |
CN114760824A (zh) * | 2017-01-18 | 2022-07-15 | 台达电子工业股份有限公司 | 均热板 |
US10770405B2 (en) * | 2017-05-31 | 2020-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal interface material having different thicknesses in packages |
US10606327B2 (en) * | 2017-06-16 | 2020-03-31 | Qualcomm Incorporated | Heat reduction using selective insulation and thermal spreading |
US10410940B2 (en) * | 2017-06-30 | 2019-09-10 | Intel Corporation | Semiconductor package with cavity |
US10755992B2 (en) | 2017-07-06 | 2020-08-25 | Qorvo Us, Inc. | Wafer-level packaging for enhanced performance |
US10541153B2 (en) | 2017-08-03 | 2020-01-21 | General Electric Company | Electronics package with integrated interconnect structure and method of manufacturing thereof |
US10541209B2 (en) | 2017-08-03 | 2020-01-21 | General Electric Company | Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof |
US10804115B2 (en) | 2017-08-03 | 2020-10-13 | General Electric Company | Electronics package with integrated interconnect structure and method of manufacturing thereof |
KR102391008B1 (ko) * | 2017-08-08 | 2022-04-26 | 현대자동차주식회사 | 파워 모듈 및 그 파워 모듈을 포함하는 전력 변환 시스템 |
US10784233B2 (en) | 2017-09-05 | 2020-09-22 | Qorvo Us, Inc. | Microelectronics package with self-aligned stacked-die assembly |
US11328979B2 (en) | 2017-09-30 | 2022-05-10 | Intel Corporation | Substrate integrated posts and heat spreader customization for enhanced package thermomechanics |
KR20190047444A (ko) * | 2017-10-27 | 2019-05-08 | 에스케이하이닉스 주식회사 | 단열벽을 포함하는 반도체 패키지 |
WO2019124024A1 (ja) | 2017-12-20 | 2019-06-27 | 三菱電機株式会社 | 半導体パッケージおよびその製造方法 |
KR102404058B1 (ko) * | 2017-12-28 | 2022-05-31 | 삼성전자주식회사 | 반도체 패키지 |
US10734302B2 (en) * | 2018-01-12 | 2020-08-04 | KULR Technology Corporation | Method and apparatus of operating a compressible thermal interface |
US11152363B2 (en) | 2018-03-28 | 2021-10-19 | Qorvo Us, Inc. | Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process |
US10497648B2 (en) | 2018-04-03 | 2019-12-03 | General Electric Company | Embedded electronics package with multi-thickness interconnect structure and method of making same |
DE102018111989B4 (de) * | 2018-05-18 | 2024-05-08 | Rogers Germany Gmbh | Elektronikmodul und Verfahren zur Herstellung desselben |
US10804246B2 (en) | 2018-06-11 | 2020-10-13 | Qorvo Us, Inc. | Microelectronics package with vertically stacked dies |
US10622290B2 (en) | 2018-07-11 | 2020-04-14 | Texas Instruments Incorporated | Packaged multichip module with conductive connectors |
US11069590B2 (en) | 2018-10-10 | 2021-07-20 | Qorvo Us, Inc. | Wafer-level fan-out package with enhanced performance |
US10964554B2 (en) | 2018-10-10 | 2021-03-30 | Qorvo Us, Inc. | Wafer-level fan-out package with enhanced performance |
US10957832B2 (en) | 2018-10-22 | 2021-03-23 | General Electric Company | Electronics package for light emitting semiconductor devices and method of manufacturing thereof |
JP7251951B2 (ja) * | 2018-11-13 | 2023-04-04 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
US11646242B2 (en) * | 2018-11-29 | 2023-05-09 | Qorvo Us, Inc. | Thermally enhanced semiconductor package with at least one heat extractor and process for making the same |
US20200235040A1 (en) | 2019-01-23 | 2020-07-23 | Qorvo Us, Inc. | Rf devices with enhanced performance and methods of forming the same |
US11387157B2 (en) | 2019-01-23 | 2022-07-12 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
US11923313B2 (en) | 2019-01-23 | 2024-03-05 | Qorvo Us, Inc. | RF device without silicon handle substrate for enhanced thermal and electrical performance and methods of forming the same |
WO2020154440A1 (en) | 2019-01-23 | 2020-07-30 | Qorvo Us, Inc. | Rf semiconductor device and manufacturing method thereof |
US11830856B2 (en) * | 2019-03-06 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor package and related methods |
DE102019206523A1 (de) * | 2019-05-07 | 2020-11-12 | Zf Friedrichshafen Ag | Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers |
US11894286B2 (en) * | 2019-06-13 | 2024-02-06 | Bae Systems Information And Electronic Systems Integration Inc. | Hermetically sealed electronics module with enhanced cooling of core integrated circuit |
US11037860B2 (en) | 2019-06-27 | 2021-06-15 | International Business Machines Corporation | Multi layer thermal interface material |
TW202105643A (zh) * | 2019-07-23 | 2021-02-01 | 德商漢高智慧財產控股公司 | 高熱通量多元件總成之熱管理 |
US11830787B2 (en) | 2019-08-06 | 2023-11-28 | Intel Corporation | Thermal management in integrated circuit packages |
US20210043573A1 (en) * | 2019-08-06 | 2021-02-11 | Intel Corporation | Thermal management in integrated circuit packages |
US11784108B2 (en) | 2019-08-06 | 2023-10-10 | Intel Corporation | Thermal management in integrated circuit packages |
US11646289B2 (en) * | 2019-12-02 | 2023-05-09 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
US11923238B2 (en) | 2019-12-12 | 2024-03-05 | Qorvo Us, Inc. | Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive |
US11670561B2 (en) * | 2019-12-19 | 2023-06-06 | Intel Corporation | 3D buildup of thermally conductive layers to resolve die height differences |
US11774190B2 (en) | 2020-04-14 | 2023-10-03 | International Business Machines Corporation | Pierced thermal interface constructions |
US11398445B2 (en) | 2020-05-29 | 2022-07-26 | General Electric Company | Mechanical punched via formation in electronics package and electronics package formed thereby |
US11551993B2 (en) * | 2020-08-28 | 2023-01-10 | Ge Aviation Systems Llc | Power overlay module and method of assembling |
TWI800049B (zh) * | 2020-10-24 | 2023-04-21 | 新加坡商Pep創新私人有限公司 | 晶片封裝方法及晶片結構 |
TWI746391B (zh) * | 2021-03-15 | 2021-11-11 | 群豐科技股份有限公司 | 積體電路封裝系統 |
US20220418079A1 (en) * | 2021-06-25 | 2022-12-29 | Amulaire Thermal Technology, Inc. | Insulating metal substrate structure |
US11950394B2 (en) | 2021-10-12 | 2024-04-02 | Ge Aviation Systems Llc | Liquid-cooled assembly and method |
JP2023094391A (ja) * | 2021-12-23 | 2023-07-05 | 新光電気工業株式会社 | 半導体装置 |
US20230238301A1 (en) * | 2022-01-25 | 2023-07-27 | Ge Aviation Systems Llc | Power overlay module with thermal storage |
TWI811136B (zh) * | 2022-10-17 | 2023-08-01 | 創世電股份有限公司 | 半導體功率元件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6306680B1 (en) * | 1999-02-22 | 2001-10-23 | General Electric Company | Power overlay chip scale packages for discrete power devices |
JP2002050889A (ja) * | 2000-07-31 | 2002-02-15 | Furukawa Electric Co Ltd:The | 電子部品内蔵型筐体 |
JP2009130044A (ja) * | 2007-11-21 | 2009-06-11 | Denso Corp | 半導体装置の製造方法 |
JP2013042135A (ja) * | 2011-08-16 | 2013-02-28 | General Electric Co <Ge> | リードフレーム接続を有するパワーオーバレイ構造 |
Family Cites Families (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3586102A (en) * | 1969-02-17 | 1971-06-22 | Teledyne Inc | Heat sink pillow |
US4561011A (en) * | 1982-10-05 | 1985-12-24 | Mitsubishi Denki Kabushiki Kaisha | Dimensionally stable semiconductor device |
US4980753A (en) * | 1988-11-21 | 1990-12-25 | Honeywell Inc. | Low-cost high-performance semiconductor chip package |
US4892245A (en) * | 1988-11-21 | 1990-01-09 | Honeywell Inc. | Controlled compression furnace bonding |
US4948032A (en) * | 1988-11-21 | 1990-08-14 | Atmel Corporation | Fluxing agent |
JPH03116948A (ja) * | 1989-09-29 | 1991-05-17 | Yoshiki Tanigawa | 超高周波ic用窒化アルミニウムパッケージ |
EP0569949A3 (en) * | 1992-05-12 | 1994-06-15 | Akira Kitahara | Surface mount components and semifinished products thereof |
US5353498A (en) * | 1993-02-08 | 1994-10-11 | General Electric Company | Method for fabricating an integrated circuit module |
JPH07321257A (ja) * | 1994-05-20 | 1995-12-08 | Hitachi Ltd | マルチチップモジュール |
DE19530264A1 (de) * | 1995-08-17 | 1997-02-20 | Abb Management Ag | Leistungshalbleitermodul |
KR100261793B1 (ko) | 1995-09-29 | 2000-07-15 | 니시무로 타이죠 | 고강도 고신뢰성 회로기판 및 그 제조방법 |
US5880530A (en) | 1996-03-29 | 1999-03-09 | Intel Corporation | Multiregion solder interconnection structure |
JPH11121662A (ja) * | 1997-10-09 | 1999-04-30 | Hitachi Ltd | 半導体装置の冷却構造 |
US5981310A (en) * | 1998-01-22 | 1999-11-09 | International Business Machines Corporation | Multi-chip heat-sink cap assembly |
US6404065B1 (en) | 1998-07-31 | 2002-06-11 | I-Xys Corporation | Electrically isolated power semiconductor package |
US6612890B1 (en) * | 1998-10-15 | 2003-09-02 | Handy & Harman (Ny Corp.) | Method and system for manufacturing electronic packaging units |
US6232151B1 (en) | 1999-11-01 | 2001-05-15 | General Electric Company | Power electronic module packaging |
JP2001244376A (ja) | 2000-02-28 | 2001-09-07 | Hitachi Ltd | 半導体装置 |
JP3683179B2 (ja) | 2000-12-26 | 2005-08-17 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6707671B2 (en) * | 2001-05-31 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Power module and method of manufacturing the same |
US7196415B2 (en) | 2002-03-22 | 2007-03-27 | Broadcom Corporation | Low voltage drop and high thermal performance ball grid array package |
US6534859B1 (en) * | 2002-04-05 | 2003-03-18 | St. Assembly Test Services Ltd. | Semiconductor package having heat sink attached to pre-molded cavities and method for creating the package |
US6987032B1 (en) * | 2002-07-19 | 2006-01-17 | Asat Ltd. | Ball grid array package and process for manufacturing same |
US7015640B2 (en) | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
CN100380636C (zh) | 2002-09-30 | 2008-04-09 | 先进互连技术有限公司 | 用于整体成型组件的热增强封装及其制造方法 |
US6777800B2 (en) * | 2002-09-30 | 2004-08-17 | Fairchild Semiconductor Corporation | Semiconductor die package including drain clip |
JP2004172489A (ja) * | 2002-11-21 | 2004-06-17 | Nec Semiconductors Kyushu Ltd | 半導体装置およびその製造方法 |
US7550097B2 (en) | 2003-09-03 | 2009-06-23 | Momentive Performance Materials, Inc. | Thermal conductive material utilizing electrically conductive nanoparticles |
WO2005051525A1 (en) | 2003-11-25 | 2005-06-09 | Polyvalor, Limited Partnership | Permeation barrier coating or layer with modulated properties and methods of making the same |
JP3823974B2 (ja) * | 2004-02-13 | 2006-09-20 | 株式会社デンソー | 半導体装置の製造方法 |
US7119432B2 (en) * | 2004-04-07 | 2006-10-10 | Lsi Logic Corporation | Method and apparatus for establishing improved thermal communication between a die and a heatspreader in a semiconductor package |
US20050258533A1 (en) | 2004-05-21 | 2005-11-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device mounting structure |
WO2006068641A1 (en) * | 2004-12-20 | 2006-06-29 | Semiconductor Components Industries, L.L.C. | Electronic package having down-set leads and method |
US7135769B2 (en) * | 2005-03-29 | 2006-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packages and methods of manufacturing thereof |
US7262444B2 (en) | 2005-08-17 | 2007-08-28 | General Electric Company | Power semiconductor packaging method and structure |
DE102005054872B4 (de) * | 2005-11-15 | 2012-04-19 | Infineon Technologies Ag | Vertikales Leistungshalbleiterbauelement, Halbleiterbauteil und Verfahren zu deren Herstellung |
US8018056B2 (en) | 2005-12-21 | 2011-09-13 | International Rectifier Corporation | Package for high power density devices |
US7733554B2 (en) | 2006-03-08 | 2010-06-08 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
US7804131B2 (en) * | 2006-04-28 | 2010-09-28 | International Rectifier Corporation | Multi-chip module |
US20070295387A1 (en) | 2006-05-05 | 2007-12-27 | Nanosolar, Inc. | Solar assembly with a multi-ply barrier layer and individually encapsulated solar cells or solar cell strings |
US7462506B2 (en) * | 2006-06-15 | 2008-12-09 | International Business Machines Corporation | Carbon dioxide gettering method for a chip module assembly |
US7298623B1 (en) * | 2006-06-29 | 2007-11-20 | International Business Machines Corporation | Organic substrate with integral thermal dissipation channels, and method for producing same |
US20080036078A1 (en) * | 2006-08-14 | 2008-02-14 | Ciclon Semiconductor Device Corp. | Wirebond-less semiconductor package |
US7999369B2 (en) | 2006-08-29 | 2011-08-16 | Denso Corporation | Power electronic package having two substrates with multiple semiconductor chips and electronic components |
US20080128897A1 (en) * | 2006-12-05 | 2008-06-05 | Tong Wa Chao | Heat spreader for a multi-chip package |
US20080142954A1 (en) * | 2006-12-19 | 2008-06-19 | Chuan Hu | Multi-chip package having two or more heat spreaders |
KR101391924B1 (ko) | 2007-01-05 | 2014-05-07 | 페어차일드코리아반도체 주식회사 | 반도체 패키지 |
US7688497B2 (en) | 2007-01-22 | 2010-03-30 | E Ink Corporation | Multi-layer sheet for use in electro-optic displays |
US7851906B2 (en) * | 2007-03-26 | 2010-12-14 | Endicott Interconnect Technologies, Inc. | Flexible circuit electronic package with standoffs |
US20080237841A1 (en) * | 2007-03-27 | 2008-10-02 | Arana Leonel R | Microelectronic package, method of manufacturing same, and system including same |
JP2009059760A (ja) * | 2007-08-30 | 2009-03-19 | Toshiba Corp | 電子回路基板の放熱構造体 |
JP2009076657A (ja) * | 2007-09-20 | 2009-04-09 | Nitto Shinko Kk | 熱伝導シート |
US20090127700A1 (en) * | 2007-11-20 | 2009-05-21 | Matthew Romig | Thermal conductor lids for area array packaged multi-chip modules and methods to dissipate heat from multi-chip modules |
JP2009200338A (ja) * | 2008-02-22 | 2009-09-03 | Renesas Technology Corp | 半導体装置の製造方法 |
US8138587B2 (en) * | 2008-09-30 | 2012-03-20 | Infineon Technologies Ag | Device including two mounting surfaces |
CN101776248B (zh) * | 2009-01-09 | 2014-06-25 | 台达电子工业股份有限公司 | 灯具及其照明装置 |
US8202765B2 (en) * | 2009-01-22 | 2012-06-19 | International Business Machines Corporation | Achieving mechanical and thermal stability in a multi-chip package |
US8358000B2 (en) * | 2009-03-13 | 2013-01-22 | General Electric Company | Double side cooled power module with power overlay |
US20120069524A1 (en) * | 2009-05-27 | 2012-03-22 | Schulz-Harder Juergen | Cooled electric unit |
US8362607B2 (en) | 2009-06-03 | 2013-01-29 | Honeywell International Inc. | Integrated circuit package including a thermally and electrically conductive package lid |
US9324672B2 (en) | 2009-08-21 | 2016-04-26 | Stats Chippac, Ltd. | Semiconductor device and method of forming dual-active sided semiconductor die in fan-out wafer level chip scale package |
US8247900B2 (en) * | 2009-12-29 | 2012-08-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flip chip package having enhanced thermal and mechanical performance |
DE102010001565A1 (de) * | 2010-02-04 | 2011-08-04 | Robert Bosch GmbH, 70469 | Leistungsmodul mit einer Schaltungsanordnung, elektrische/elektronische Schaltungsanordnung, Verfahren zur Herstellung eines Leistungsmoduls |
US9013018B2 (en) | 2010-02-18 | 2015-04-21 | Beneq Oy | Multilayer moisture barrier |
US8299587B2 (en) * | 2010-04-21 | 2012-10-30 | Powertech Technology Inc. | Lead frame package structure for side-by-side disposed chips |
US8349658B2 (en) * | 2010-05-26 | 2013-01-08 | Stats Chippac, Ltd. | Semiconductor device and method of forming conductive posts and heat sink over semiconductor die using leadframe |
CN102339818B (zh) | 2010-07-15 | 2014-04-30 | 台达电子工业股份有限公司 | 功率模块及其制造方法 |
CN102447018A (zh) * | 2010-10-12 | 2012-05-09 | 柏腾科技股份有限公司 | 基板与散热结构的结合改良及其方法 |
JP2012118184A (ja) * | 2010-11-30 | 2012-06-21 | Mitsubishi Electric Corp | 画像表示装置、画像表示装置の解体治具、及び画像表示装置の解体方法 |
JP2012119597A (ja) * | 2010-12-03 | 2012-06-21 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
TWI449136B (zh) * | 2011-04-20 | 2014-08-11 | Cyntec Co Ltd | 金屬芯印刷電路板及電子封裝結構 |
US9000576B2 (en) * | 2011-04-22 | 2015-04-07 | Cyntec Co., Ltd. | Package structure and manufacturing method thereof |
CN102208498A (zh) * | 2011-05-09 | 2011-10-05 | 珠海市经典电子有限公司 | 一种led高导热绝缘基座封装的方法及器件 |
CN202058730U (zh) * | 2011-05-09 | 2011-11-30 | 珠海市经典电子有限公司 | 一种led高导热绝缘基座封装的器件 |
CN103534805B (zh) * | 2011-05-16 | 2016-08-24 | 丰田自动车株式会社 | 功率模块 |
JP5779042B2 (ja) * | 2011-08-18 | 2015-09-16 | 新光電気工業株式会社 | 半導体装置 |
CN202282342U (zh) * | 2011-08-29 | 2012-06-20 | 奇鋐科技股份有限公司 | 散热装置 |
WO2013065182A1 (ja) * | 2011-11-04 | 2013-05-10 | トヨタ自動車株式会社 | パワーモジュール、電力変換装置および電動車両 |
KR20130069108A (ko) * | 2011-12-16 | 2013-06-26 | 삼성전기주식회사 | 반도체 패키지 |
US8780561B2 (en) * | 2012-03-30 | 2014-07-15 | Raytheon Company | Conduction cooling of multi-channel flip chip based panel array circuits |
US8941208B2 (en) | 2012-07-30 | 2015-01-27 | General Electric Company | Reliable surface mount integrated power module |
US9299630B2 (en) | 2012-07-30 | 2016-03-29 | General Electric Company | Diffusion barrier for surface mount modules |
US10269688B2 (en) * | 2013-03-14 | 2019-04-23 | General Electric Company | Power overlay structure and method of making same |
US8987876B2 (en) * | 2013-03-14 | 2015-03-24 | General Electric Company | Power overlay structure and method of making same |
US9089051B2 (en) * | 2013-06-27 | 2015-07-21 | International Business Machines Corporation | Multichip module with stiffening frame and associated covers |
US9613930B2 (en) * | 2013-10-25 | 2017-04-04 | Infineon Technologies Ag | Semiconductor device and method for manufacturing a semiconductor device |
US9269694B2 (en) * | 2013-12-11 | 2016-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packages with thermal management features for reduced thermal crosstalk and methods of forming same |
US10553517B2 (en) * | 2018-01-18 | 2020-02-04 | Semiconductor Components Industries, Llc | High power module semiconductor package with multiple submodules |
US11075137B2 (en) * | 2018-05-02 | 2021-07-27 | Semiconductor Components Industries, Llc | High power module package structures |
-
2013
- 2013-05-20 US US13/897,638 patent/US8987876B2/en active Active
-
2014
- 2014-03-03 TW TW103107092A patent/TWI628750B/zh active
- 2014-03-03 TW TW107117243A patent/TWI703681B/zh active
- 2014-03-12 JP JP2014048289A patent/JP6595158B2/ja active Active
- 2014-03-13 KR KR1020140029835A patent/KR102151047B1/ko active IP Right Grant
- 2014-03-14 CN CN202010052240.1A patent/CN111508912B/zh active Active
- 2014-03-14 CN CN201410094386.7A patent/CN104051377B/zh active Active
- 2014-03-14 EP EP14159735.1A patent/EP2779230B1/en active Active
-
2015
- 2015-03-23 US US14/665,735 patent/US9704788B2/en active Active
-
2017
- 2017-05-22 US US15/601,735 patent/US20170263539A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6306680B1 (en) * | 1999-02-22 | 2001-10-23 | General Electric Company | Power overlay chip scale packages for discrete power devices |
JP2002050889A (ja) * | 2000-07-31 | 2002-02-15 | Furukawa Electric Co Ltd:The | 電子部品内蔵型筐体 |
JP2009130044A (ja) * | 2007-11-21 | 2009-06-11 | Denso Corp | 半導体装置の製造方法 |
JP2013042135A (ja) * | 2011-08-16 | 2013-02-28 | General Electric Co <Ge> | リードフレーム接続を有するパワーオーバレイ構造 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017059606A (ja) * | 2015-09-15 | 2017-03-23 | トヨタ自動車株式会社 | 半導体装置 |
JP2018049938A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社東芝 | 半導体装置 |
JP2018063994A (ja) * | 2016-10-11 | 2018-04-19 | トヨタ自動車株式会社 | 半導体冷却装置 |
WO2018164160A1 (ja) * | 2017-03-10 | 2018-09-13 | 株式会社村田製作所 | モジュール |
WO2023026511A1 (ja) * | 2021-08-25 | 2023-03-02 | キオクシア株式会社 | 半導体装置及び電子機器 |
Also Published As
Publication number | Publication date |
---|---|
TW201501248A (zh) | 2015-01-01 |
TW201830590A (zh) | 2018-08-16 |
CN104051377A (zh) | 2014-09-17 |
EP2779230A2 (en) | 2014-09-17 |
EP2779230A3 (en) | 2015-04-29 |
US20150194375A1 (en) | 2015-07-09 |
TWI703681B (zh) | 2020-09-01 |
US20140264799A1 (en) | 2014-09-18 |
KR20140113473A (ko) | 2014-09-24 |
JP6595158B2 (ja) | 2019-10-23 |
EP2779230B1 (en) | 2019-01-16 |
CN111508912B (zh) | 2023-08-01 |
CN104051377B (zh) | 2020-02-21 |
US9704788B2 (en) | 2017-07-11 |
CN111508912A (zh) | 2020-08-07 |
US8987876B2 (en) | 2015-03-24 |
TWI628750B (zh) | 2018-07-01 |
US20170263539A1 (en) | 2017-09-14 |
KR102151047B1 (ko) | 2020-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6595158B2 (ja) | パワーオーバーレイ構造およびその製造方法 | |
JP6401468B2 (ja) | パワーオーバーレイ構造およびその製造方法 | |
JP6302184B2 (ja) | 信頼性のある表面実装集積型パワーモジュール | |
KR101978512B1 (ko) | 리드프레임 접속을 갖는 pol 구조체 | |
JP2018120902A (ja) | 電力用電子回路パッケージおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170222 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180423 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180904 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181114 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190305 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190527 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190812 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20190812 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190828 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190926 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6595158 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |