JP2013527603A5 - - Google Patents

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Publication number
JP2013527603A5
JP2013527603A5 JP2013506145A JP2013506145A JP2013527603A5 JP 2013527603 A5 JP2013527603 A5 JP 2013527603A5 JP 2013506145 A JP2013506145 A JP 2013506145A JP 2013506145 A JP2013506145 A JP 2013506145A JP 2013527603 A5 JP2013527603 A5 JP 2013527603A5
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Japan
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JP2013506145A
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English (en)
Japanese (ja)
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JP2013527603A (ja
JP5893003B2 (ja
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Priority claimed from US12/763,287 external-priority patent/US8193602B2/en
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Publication of JP2013527603A5 publication Critical patent/JP2013527603A5/ja
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JP2013506145A 2010-04-20 2011-02-25 ショットキー・ダイオード Active JP5893003B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/763,287 2010-04-20
US12/763,287 US8193602B2 (en) 2010-04-20 2010-04-20 Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
PCT/US2011/026213 WO2011133247A2 (en) 2010-04-20 2011-02-25 Schottky diode

Publications (3)

Publication Number Publication Date
JP2013527603A JP2013527603A (ja) 2013-06-27
JP2013527603A5 true JP2013527603A5 (enExample) 2014-04-10
JP5893003B2 JP5893003B2 (ja) 2016-03-23

Family

ID=44787623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013506145A Active JP5893003B2 (ja) 2010-04-20 2011-02-25 ショットキー・ダイオード

Country Status (5)

Country Link
US (2) US8193602B2 (enExample)
JP (1) JP5893003B2 (enExample)
CN (1) CN102870222B (enExample)
TW (1) TWI563671B (enExample)
WO (1) WO2011133247A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456773B (zh) * 2012-05-30 2016-03-16 中芯国际集成电路制造(上海)有限公司 肖特基二极管及其制造方法
US10069023B2 (en) * 2013-01-18 2018-09-04 Texas Instruments Incorporated Optical sensor with integrated pinhole
US12382736B2 (en) 2021-10-01 2025-08-05 Texas Instruments Incorporated Wide angle optical angle sensor
KR102854105B1 (ko) * 2024-04-24 2025-09-04 서울과학기술대학교 산학협력단 쇼트키 장벽 다이오드 및 이를 포함하는 반도체 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201666A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体装置
JP3058040B2 (ja) * 1995-01-18 2000-07-04 株式会社村田製作所 半導体装置
DE69636818T2 (de) 1995-06-19 2007-11-08 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zur selbst-justierten Herstellung von implantierten Gebieten
US6784489B1 (en) * 1997-03-28 2004-08-31 Stmicroelectronics, Inc. Method of operating a vertical DMOS transistor with schottky diode body structure
US6399413B1 (en) 2000-04-18 2002-06-04 Agere Systems Guardian Corp. Self aligned gated Schottky diode guard ring structures
US20050139860A1 (en) * 2003-10-22 2005-06-30 Snyder John P. Dynamic schottky barrier MOSFET device and method of manufacture
JP2005209710A (ja) * 2004-01-20 2005-08-04 Hitachi Ulsi Systems Co Ltd 半導体集積回路装置の製造方法
US7544557B2 (en) 2004-12-15 2009-06-09 Tower Semiconductor Ltd. Gate defined Schottky diode
JP4695402B2 (ja) * 2005-01-26 2011-06-08 パナソニック株式会社 ショットキーバリアダイオードの製造方法
JP2006310555A (ja) * 2005-04-28 2006-11-09 Nec Electronics Corp 半導体装置およびその製造方法
JP2006319096A (ja) * 2005-05-12 2006-11-24 Renesas Technology Corp ショットキーバリアダイオード
KR100763848B1 (ko) 2006-07-05 2007-10-05 삼성전자주식회사 쇼트키 다이오드 및 그 제조 방법
KR100780967B1 (ko) 2006-12-07 2007-12-03 삼성전자주식회사 고전압용 쇼트키 다이오드 구조체
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
GB2451116A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Polysilicon devices
JP5085241B2 (ja) * 2007-09-06 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US8207559B2 (en) 2008-07-14 2012-06-26 Texas Instruments Incorporated Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures

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