CN102870222B - 肖特基二极管 - Google Patents

肖特基二极管 Download PDF

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Publication number
CN102870222B
CN102870222B CN201180020229.6A CN201180020229A CN102870222B CN 102870222 B CN102870222 B CN 102870222B CN 201180020229 A CN201180020229 A CN 201180020229A CN 102870222 B CN102870222 B CN 102870222B
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CN
China
Prior art keywords
strip
type
region
metal
conductive
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Active
Application number
CN201180020229.6A
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English (en)
Chinese (zh)
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CN102870222A (zh
Inventor
Z·A·莎菲
J·A·巴布科克
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National Semiconductor Corp
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National Semiconductor Corp
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Publication of CN102870222A publication Critical patent/CN102870222A/zh
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Publication of CN102870222B publication Critical patent/CN102870222B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN201180020229.6A 2010-04-20 2011-02-25 肖特基二极管 Active CN102870222B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/763,287 2010-04-20
US12/763,287 US8193602B2 (en) 2010-04-20 2010-04-20 Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
PCT/US2011/026213 WO2011133247A2 (en) 2010-04-20 2011-02-25 Schottky diode

Publications (2)

Publication Number Publication Date
CN102870222A CN102870222A (zh) 2013-01-09
CN102870222B true CN102870222B (zh) 2016-06-29

Family

ID=44787623

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180020229.6A Active CN102870222B (zh) 2010-04-20 2011-02-25 肖特基二极管

Country Status (5)

Country Link
US (2) US8193602B2 (enExample)
JP (1) JP5893003B2 (enExample)
CN (1) CN102870222B (enExample)
TW (1) TWI563671B (enExample)
WO (1) WO2011133247A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456773B (zh) * 2012-05-30 2016-03-16 中芯国际集成电路制造(上海)有限公司 肖特基二极管及其制造方法
US10069023B2 (en) * 2013-01-18 2018-09-04 Texas Instruments Incorporated Optical sensor with integrated pinhole
US12382736B2 (en) 2021-10-01 2025-08-05 Texas Instruments Incorporated Wide angle optical angle sensor
KR102854105B1 (ko) * 2024-04-24 2025-09-04 서울과학기술대학교 산학협력단 쇼트키 장벽 다이오드 및 이를 포함하는 반도체 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060125019A1 (en) * 2004-12-15 2006-06-15 Tower Semiconductor Ltd. Gate defined schottky diode
CN1855551A (zh) * 2005-04-28 2006-11-01 恩益禧电子股份有限公司 半导体器件及其制造方法
US20080135970A1 (en) * 2006-12-07 2008-06-12 Samsung Electronics Co., Ltd. High Voltage Shottky Diodes

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
JPS60201666A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体装置
JP3058040B2 (ja) * 1995-01-18 2000-07-04 株式会社村田製作所 半導体装置
DE69636818T2 (de) 1995-06-19 2007-11-08 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zur selbst-justierten Herstellung von implantierten Gebieten
US6784489B1 (en) * 1997-03-28 2004-08-31 Stmicroelectronics, Inc. Method of operating a vertical DMOS transistor with schottky diode body structure
US6399413B1 (en) 2000-04-18 2002-06-04 Agere Systems Guardian Corp. Self aligned gated Schottky diode guard ring structures
US20050139860A1 (en) * 2003-10-22 2005-06-30 Snyder John P. Dynamic schottky barrier MOSFET device and method of manufacture
JP2005209710A (ja) * 2004-01-20 2005-08-04 Hitachi Ulsi Systems Co Ltd 半導体集積回路装置の製造方法
JP4695402B2 (ja) * 2005-01-26 2011-06-08 パナソニック株式会社 ショットキーバリアダイオードの製造方法
JP2006319096A (ja) * 2005-05-12 2006-11-24 Renesas Technology Corp ショットキーバリアダイオード
KR100763848B1 (ko) 2006-07-05 2007-10-05 삼성전자주식회사 쇼트키 다이오드 및 그 제조 방법
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
GB2451116A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Polysilicon devices
JP5085241B2 (ja) * 2007-09-06 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US8207559B2 (en) 2008-07-14 2012-06-26 Texas Instruments Incorporated Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060125019A1 (en) * 2004-12-15 2006-06-15 Tower Semiconductor Ltd. Gate defined schottky diode
CN1855551A (zh) * 2005-04-28 2006-11-01 恩益禧电子股份有限公司 半导体器件及其制造方法
US20080135970A1 (en) * 2006-12-07 2008-06-12 Samsung Electronics Co., Ltd. High Voltage Shottky Diodes

Also Published As

Publication number Publication date
US8193602B2 (en) 2012-06-05
US20120244689A1 (en) 2012-09-27
CN102870222A (zh) 2013-01-09
WO2011133247A3 (en) 2011-12-22
JP2013527603A (ja) 2013-06-27
WO2011133247A2 (en) 2011-10-27
US8728920B2 (en) 2014-05-20
US20110254118A1 (en) 2011-10-20
JP5893003B2 (ja) 2016-03-23
TWI563671B (en) 2016-12-21
TW201145524A (en) 2011-12-16

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