JP5893003B2 - ショットキー・ダイオード - Google Patents
ショットキー・ダイオード Download PDFInfo
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- JP5893003B2 JP5893003B2 JP2013506145A JP2013506145A JP5893003B2 JP 5893003 B2 JP5893003 B2 JP 5893003B2 JP 2013506145 A JP2013506145 A JP 2013506145A JP 2013506145 A JP2013506145 A JP 2013506145A JP 5893003 B2 JP5893003 B2 JP 5893003B2
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- 229910052751 metal Inorganic materials 0.000 claims description 105
- 239000002184 metal Substances 0.000 claims description 105
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000002019 doping agent Substances 0.000 claims description 25
- 238000002955 isolation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 29
- 229910021332 silicide Inorganic materials 0.000 description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 25
- 239000000463 material Substances 0.000 description 24
- 125000006850 spacer group Chemical group 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (8)
- ショットキー・ダイオードであって、
或るドーパント濃度を有するn型領域を有する半導体構造、
前記半導体構造と接し、前記n型領域のドーパント濃度より大きいドーパント濃度を有する、第1のn型ストリップ、
前記半導体構造と接し、前記n型領域のドーパント濃度より大きいドーパント濃度を有し、前記第1のn型ストリップから間隔を空けて配置される、第2のn型ストリップであって、n型でn型領域のドーパント濃度より大きいドーパント濃度を有し、前記第1のn型ストリップ及び前記第2のn型ストリップ両方に接するドープされた領域がない、前記第2のn型ストリップ、
前記第1のn型ストリップ及び前記第2のn型ストリップを横方向に囲むように前記半導体構造に接し、前記第1のn型ストリップ及び前記第2のn型ストリップに接する、シャロートレンチアイソレーション(STI)リング、
前記第1のn型ストリップの上面に接する第1の金属ストリップ、
前記第2のn型ストリップの上面に接する第2の金属ストリップ、
前記半導体構造に接し、第1の金属ストリップと前記第2の金属ストリップとの間に横方向にあり、前記第1の金属ストリップ及び前記第2の金属ストリップから間隔を空けて配置される、金属領域であって、前記第1の金属ストリップ、前記第2の金属ストリップ及び前記金属領域が単一の面にある、前記金属領域、
前記半導体構造の上面に接し、前記第1の金属ストリップと前記金属領域との間に横方向にある、第1の非導電性ストリップ、
前記半導体構造の上面に接し、前記第1の非導電性ストリップから間隔を空けて配置され、前記第2の金属ストリップと前記金属領域との間に横方向にある、第2の非導電性ストリップ、
前記半導体構造に接し、前記第1のn型ストリップと前記第2のn型ストリップとの間に横方向にある、第1のp型領域、及び
前記半導体構造に接し、前記第1のn型ストリップと前記第2のn型ストリップとの間に横方向にある第2のp型領域であって、前記第1のp型領域及び前記第2のp型領域の両方に接するp型領域がないように前記第1のp型領域から間隔を空けて配置され、前記STIリングが前記第1のp型領域及び前記第2のp型領域に接する、前記第2のp型領域、
を含む、ショットキー・ダイオード。 - 請求項1に記載のショットキー・ダイオードであって、
前記第1のn型ストリップが、前記n型領域のドーパント濃度よりも大きいドーパント濃度を有する第1のn+領域と、前記第1のn+領域のドーパント濃度よりも小さいドーパント濃度を有する第1のLDD領域とを含み、前記第2のn型ストリップが、前記n型領域のドーパント濃度よりも大きいドーパント濃度を有する第2のn+領域と、前記第2のn+領域のドーパント濃度よりも小さいドーパント濃度を有する第2のLDD領域とを含む、ショットキー・ダイオード。 - 請求項1又は2に記載のショットキー・ダイオードであって、
前記第1の非導電性ストリップの上面に接する第1の導電性ストリップ、
前記第2の非導電性ストリップの上面に接する第2の導電性ストリップ、
前記第1の導電性ストリップの上面に接する第3の金属ストリップ、及び
前記第2の導電性ストリップの上面に接する第4の金属ストリップ、
を更に含む、ショットキー・ダイオード。 - 請求項3に記載のショットキー・ダイオードであって、
前記半導体構造内に位置する第1のSTIストリップであって、前記第1のn型ストリップが前記第1のSTIストリップと前記STIリングとの間にありかつそれらに接する、前記第1のSTIストリップ、及び
前記半導体構造内に位置する第2のSTIストリップであって、前記第2のn型ストリップが前記第2のSTIストリップと前記STIリングとの間にありかつそれらに接する、前記第2のSTIストリップ、
を更に含む、ショットキー・ダイオード。 - 請求項4に記載のショットキー・ダイオードであって、
前記第1の導電性ストリップが前記第1のSTIストリップの一部の直上にあり、前記第2の導電性ストリップが前記第2のSTIストリップの一部の直上にある、ショットキー・ダイオード。 - 請求項1又は2に記載のショットキー・ダイオードであって、
前記第1の非導電性ストリップ、前記第2の非導電性ストリップ、前記第1の金属ストリップ、前記第2の金属ストリップ、及び前記金属領域に接する非導電性層を更に含み、前記非導電性層と前記第1の非導電性ストリップの如何なる部分との間に導電性部材がなく、前記非導電性層と前記第2の非導電性ストリップの如何なる部分との間に導電性部材がない、ショットキー・ダイオード。 - 請求項3に記載のショットキー・ダイオードであって、
半導体構造が、絶縁層、前記絶縁層に接する第1のn型領域、及び前記絶縁層に接する第2のn型領域を含み、前記金属領域の底面が前記絶縁層に接する、ショットキー・ダイオード。 - 請求項7に記載のショットキー・ダイオードであって、
前記金属領域の側壁が前記第1及び第2のn型領域に接する、ショットキー・ダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/763,287 | 2010-04-20 | ||
US12/763,287 US8193602B2 (en) | 2010-04-20 | 2010-04-20 | Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown |
PCT/US2011/026213 WO2011133247A2 (en) | 2010-04-20 | 2011-02-25 | Schottky diode |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013527603A JP2013527603A (ja) | 2013-06-27 |
JP2013527603A5 JP2013527603A5 (ja) | 2014-04-10 |
JP5893003B2 true JP5893003B2 (ja) | 2016-03-23 |
Family
ID=44787623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013506145A Active JP5893003B2 (ja) | 2010-04-20 | 2011-02-25 | ショットキー・ダイオード |
Country Status (5)
Country | Link |
---|---|
US (2) | US8193602B2 (ja) |
JP (1) | JP5893003B2 (ja) |
CN (1) | CN102870222B (ja) |
TW (1) | TWI563671B (ja) |
WO (1) | WO2011133247A2 (ja) |
Families Citing this family (2)
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CN103456773B (zh) * | 2012-05-30 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 肖特基二极管及其制造方法 |
US10069023B2 (en) | 2013-01-18 | 2018-09-04 | Texas Instruments Incorporated | Optical sensor with integrated pinhole |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60201666A (ja) * | 1984-03-27 | 1985-10-12 | Nec Corp | 半導体装置 |
JP3058040B2 (ja) * | 1995-01-18 | 2000-07-04 | 株式会社村田製作所 | 半導体装置 |
US6153484A (en) | 1995-06-19 | 2000-11-28 | Imec Vzw | Etching process of CoSi2 layers |
US6784489B1 (en) * | 1997-03-28 | 2004-08-31 | Stmicroelectronics, Inc. | Method of operating a vertical DMOS transistor with schottky diode body structure |
US6399413B1 (en) | 2000-04-18 | 2002-06-04 | Agere Systems Guardian Corp. | Self aligned gated Schottky diode guard ring structures |
WO2005038901A1 (en) * | 2003-10-22 | 2005-04-28 | Spinnaker Semiconductor, Inc. | Dynamic schottky barrier mosfet device and method of manufacture |
JP2005209710A (ja) * | 2004-01-20 | 2005-08-04 | Hitachi Ulsi Systems Co Ltd | 半導体集積回路装置の製造方法 |
US7544557B2 (en) | 2004-12-15 | 2009-06-09 | Tower Semiconductor Ltd. | Gate defined Schottky diode |
JP4695402B2 (ja) * | 2005-01-26 | 2011-06-08 | パナソニック株式会社 | ショットキーバリアダイオードの製造方法 |
JP2006310555A (ja) * | 2005-04-28 | 2006-11-09 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2006319096A (ja) * | 2005-05-12 | 2006-11-24 | Renesas Technology Corp | ショットキーバリアダイオード |
KR100763848B1 (ko) | 2006-07-05 | 2007-10-05 | 삼성전자주식회사 | 쇼트키 다이오드 및 그 제조 방법 |
KR100780967B1 (ko) | 2006-12-07 | 2007-12-03 | 삼성전자주식회사 | 고전압용 쇼트키 다이오드 구조체 |
US8168466B2 (en) * | 2007-06-01 | 2012-05-01 | Semiconductor Components Industries, Llc | Schottky diode and method therefor |
GB2451116A (en) * | 2007-07-20 | 2009-01-21 | X Fab Uk Ltd | Polysilicon devices |
JP5085241B2 (ja) * | 2007-09-06 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8338906B2 (en) * | 2008-01-30 | 2012-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Schottky device |
US8207559B2 (en) | 2008-07-14 | 2012-06-26 | Texas Instruments Incorporated | Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures |
-
2010
- 2010-04-20 US US12/763,287 patent/US8193602B2/en active Active
-
2011
- 2011-02-25 CN CN201180020229.6A patent/CN102870222B/zh active Active
- 2011-02-25 JP JP2013506145A patent/JP5893003B2/ja active Active
- 2011-02-25 WO PCT/US2011/026213 patent/WO2011133247A2/en active Application Filing
- 2011-03-21 TW TW100109483A patent/TWI563671B/zh active
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2012
- 2012-06-01 US US13/486,166 patent/US8728920B2/en active Active
Also Published As
Publication number | Publication date |
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TWI563671B (en) | 2016-12-21 |
US20120244689A1 (en) | 2012-09-27 |
US20110254118A1 (en) | 2011-10-20 |
US8728920B2 (en) | 2014-05-20 |
US8193602B2 (en) | 2012-06-05 |
WO2011133247A3 (en) | 2011-12-22 |
CN102870222B (zh) | 2016-06-29 |
JP2013527603A (ja) | 2013-06-27 |
CN102870222A (zh) | 2013-01-09 |
TW201145524A (en) | 2011-12-16 |
WO2011133247A2 (en) | 2011-10-27 |
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