JP2008516437A - ゲート構造及び該構造を作る方法 - Google Patents
ゲート構造及び該構造を作る方法 Download PDFInfo
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- JP2008516437A JP2008516437A JP2007535216A JP2007535216A JP2008516437A JP 2008516437 A JP2008516437 A JP 2008516437A JP 2007535216 A JP2007535216 A JP 2007535216A JP 2007535216 A JP2007535216 A JP 2007535216A JP 2008516437 A JP2008516437 A JP 2008516437A
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- JP
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- Prior art keywords
- gate
- layer
- polysilicon
- mos transistor
- metal silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 41
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 229920005591 polysilicon Polymers 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical group [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 238000010924 continuous production Methods 0.000 claims description 2
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Abstract
【解決手段】本発明は、MOSトランジスタに関し、そのゲートは絶縁層(31)、金属シリサイド層(50)、導電性封入材料層(53)、及びポリシリコン層(55)を連続的に含む。
【選択図】図4
Description
ゲート酸化物層31の厚さ:1nmから5nm、
シリサイド層50の厚さ:10nmから30nm、
ニッケル封入層53の厚さ:10nm、
ポリシリコン層55の厚さ:60nmから120nm。
2 トランジスタ
3 絶縁領域
4 ポリシリコンゲート
5 ゲート絶縁物
8 低濃度ドープのドレイン領域
9 低濃度ドープのドレイン領域
10 スペーサ
11 ソース及びドレイン領域
12 ソース及びドレイン領域
13 金属シリサイド接点
14 金属シリサイド接点
16 金属シリサイド接点
20 ポリシリコンゲート
21 ソース領域のレベル
22 ドレイン領域のレベル
31 酸化ケイ素絶縁層
32 ポリシリコン層
33 酸化ケイ素のハードマスク層
34 ゲートパターン
36 ゲート酸化物
37 絶縁ゲート
38 ハードマスク
40 厚い酸化層
41 ニッケル層
46 ポリシリコン層
50 ポリシリコン層
51 マスク
52 矢印
53 導電性封入材料の層
55 ポリシリコン層
57 シリサイド領域
Claims (11)
- 絶縁層(31)、金属シリサイド層(50)、導電性封入材料の層(53)、及びポリシリコン層(55)を連続的に含むことを特徴とするMOSトランジスタゲート。
- 前記金属シリサイド層がニッケルシリサイド層であることを特徴とする請求項1に記載のゲート。
- 前記封入層が、窒化チタン及び窒化タンタルを含むグループから選択されることを特徴とする請求項1に記載のゲート。
- 前記金属シリサイド層の厚さが25nmより小さいことを特徴とする請求項1に記載のゲート。
- 前記封入層の厚さが20nmより小さいことを特徴とする請求項1に記載のゲート。
- 前記ポリシリコン層(55)の上方部分に第2の金属シリサイド層(57)をさらに含むことを特徴とする請求項1に記載のゲート。
- 請求項1から請求項6のいずれか一項に記載のゲートを有することを特徴とするMOSトランジスタ。
- 絶縁ゲートの絶縁層(31)を形成し;
薄いポリシリコン層(50)を形成し;
前記ポリシリコン層(50)にN型又はP型ドーパントを注入し;
前記ポリシリコン(50)を金属シリサイドに変化させ;
導電性封入材料の層(53)を形成し;及び
ポリシリコン層(55)を形成するという連続的な工程を含み、ゲートの厚さ全体が所定のMOSトランジスタ製造技術でのゲートの通常の厚さを有することを特徴とするMOSトランジスタゲートを製造する方法。 - 前記MOSトランジスタのソース及びドレイン領域を形成し、及び
前記ソース及びドレイン領域をケイ素化するという工程をさらに含むことを特徴とする請求項8に記載の方法。 - 前記金属シリサイドがニッケルシリサイドであることを特徴とする請求項8に記載の方法。
- 前記封入層が、窒化チタン及び窒化タンタルを含むグループから選択されることを特徴とする請求項8に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0452272 | 2004-10-05 | ||
PCT/FR2005/050812 WO2006037927A1 (fr) | 2004-10-05 | 2005-10-05 | Structure de grille et procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008516437A true JP2008516437A (ja) | 2008-05-15 |
Family
ID=34950484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007535216A Pending JP2008516437A (ja) | 2004-10-05 | 2005-10-05 | ゲート構造及び該構造を作る方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110095381A1 (ja) |
EP (1) | EP1831929A1 (ja) |
JP (1) | JP2008516437A (ja) |
CN (1) | CN101061586A (ja) |
TW (1) | TW200633216A (ja) |
WO (1) | WO2006037927A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63300562A (ja) * | 1987-05-22 | 1988-12-07 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | ゲート構造 |
JPH10303412A (ja) * | 1997-04-22 | 1998-11-13 | Sony Corp | 半導体装置及びその製造方法 |
JPH1117182A (ja) * | 1997-06-26 | 1999-01-22 | Sony Corp | 半導体装置およびその製造方法 |
JPH11135789A (ja) * | 1997-10-31 | 1999-05-21 | Nippon Steel Corp | 半導体装置およびその製造方法 |
JPH11261071A (ja) * | 1998-03-11 | 1999-09-24 | Sony Corp | ゲート電極およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2874626B2 (ja) * | 1996-01-23 | 1999-03-24 | 日本電気株式会社 | 半導体装置の製造方法 |
TW439308B (en) * | 1998-12-16 | 2001-06-07 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
US6737710B2 (en) * | 1999-06-30 | 2004-05-18 | Intel Corporation | Transistor structure having silicide source/drain extensions |
US20010045608A1 (en) * | 1999-12-29 | 2001-11-29 | Hua-Chou Tseng | Transister with a buffer layer and raised source/drain regions |
US6645798B2 (en) * | 2001-06-22 | 2003-11-11 | Micron Technology, Inc. | Metal gate engineering for surface p-channel devices |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
JP3607684B2 (ja) * | 2002-03-25 | 2005-01-05 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
JP3646718B2 (ja) * | 2002-10-04 | 2005-05-11 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-10-04 TW TW094134627A patent/TW200633216A/zh unknown
- 2005-10-05 CN CNA2005800338712A patent/CN101061586A/zh active Pending
- 2005-10-05 JP JP2007535216A patent/JP2008516437A/ja active Pending
- 2005-10-05 WO PCT/FR2005/050812 patent/WO2006037927A1/fr active Application Filing
- 2005-10-05 US US11/664,853 patent/US20110095381A1/en not_active Abandoned
- 2005-10-05 EP EP05810641A patent/EP1831929A1/fr not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63300562A (ja) * | 1987-05-22 | 1988-12-07 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | ゲート構造 |
JPH10303412A (ja) * | 1997-04-22 | 1998-11-13 | Sony Corp | 半導体装置及びその製造方法 |
JPH1117182A (ja) * | 1997-06-26 | 1999-01-22 | Sony Corp | 半導体装置およびその製造方法 |
JPH11135789A (ja) * | 1997-10-31 | 1999-05-21 | Nippon Steel Corp | 半導体装置およびその製造方法 |
JPH11261071A (ja) * | 1998-03-11 | 1999-09-24 | Sony Corp | ゲート電極およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200633216A (en) | 2006-09-16 |
CN101061586A (zh) | 2007-10-24 |
WO2006037927A1 (fr) | 2006-04-13 |
EP1831929A1 (fr) | 2007-09-12 |
US20110095381A1 (en) | 2011-04-28 |
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