JP5893003B2 - ショットキー・ダイオード - Google Patents

ショットキー・ダイオード Download PDF

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Publication number
JP5893003B2
JP5893003B2 JP2013506145A JP2013506145A JP5893003B2 JP 5893003 B2 JP5893003 B2 JP 5893003B2 JP 2013506145 A JP2013506145 A JP 2013506145A JP 2013506145 A JP2013506145 A JP 2013506145A JP 5893003 B2 JP5893003 B2 JP 5893003B2
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JP
Japan
Prior art keywords
strip
type
region
metal
contact
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JP2013506145A
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English (en)
Japanese (ja)
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JP2013527603A (ja
JP2013527603A5 (enExample
Inventor
アラン シャーフィ ジア
アラン シャーフィ ジア
エイ バブコック ジェフェリー
エイ バブコック ジェフェリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
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National Semiconductor Corp
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Publication date
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Publication of JP2013527603A publication Critical patent/JP2013527603A/ja
Publication of JP2013527603A5 publication Critical patent/JP2013527603A5/ja
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Publication of JP5893003B2 publication Critical patent/JP5893003B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Electrodes Of Semiconductors (AREA)
JP2013506145A 2010-04-20 2011-02-25 ショットキー・ダイオード Active JP5893003B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/763,287 2010-04-20
US12/763,287 US8193602B2 (en) 2010-04-20 2010-04-20 Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
PCT/US2011/026213 WO2011133247A2 (en) 2010-04-20 2011-02-25 Schottky diode

Publications (3)

Publication Number Publication Date
JP2013527603A JP2013527603A (ja) 2013-06-27
JP2013527603A5 JP2013527603A5 (enExample) 2014-04-10
JP5893003B2 true JP5893003B2 (ja) 2016-03-23

Family

ID=44787623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013506145A Active JP5893003B2 (ja) 2010-04-20 2011-02-25 ショットキー・ダイオード

Country Status (5)

Country Link
US (2) US8193602B2 (enExample)
JP (1) JP5893003B2 (enExample)
CN (1) CN102870222B (enExample)
TW (1) TWI563671B (enExample)
WO (1) WO2011133247A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456773B (zh) * 2012-05-30 2016-03-16 中芯国际集成电路制造(上海)有限公司 肖特基二极管及其制造方法
US10069023B2 (en) * 2013-01-18 2018-09-04 Texas Instruments Incorporated Optical sensor with integrated pinhole
US12382736B2 (en) 2021-10-01 2025-08-05 Texas Instruments Incorporated Wide angle optical angle sensor
KR102854105B1 (ko) * 2024-04-24 2025-09-04 서울과학기술대학교 산학협력단 쇼트키 장벽 다이오드 및 이를 포함하는 반도체 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201666A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体装置
JP3058040B2 (ja) * 1995-01-18 2000-07-04 株式会社村田製作所 半導体装置
DE69636818T2 (de) 1995-06-19 2007-11-08 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zur selbst-justierten Herstellung von implantierten Gebieten
US6784489B1 (en) * 1997-03-28 2004-08-31 Stmicroelectronics, Inc. Method of operating a vertical DMOS transistor with schottky diode body structure
US6399413B1 (en) 2000-04-18 2002-06-04 Agere Systems Guardian Corp. Self aligned gated Schottky diode guard ring structures
US20050139860A1 (en) * 2003-10-22 2005-06-30 Snyder John P. Dynamic schottky barrier MOSFET device and method of manufacture
JP2005209710A (ja) * 2004-01-20 2005-08-04 Hitachi Ulsi Systems Co Ltd 半導体集積回路装置の製造方法
US7544557B2 (en) 2004-12-15 2009-06-09 Tower Semiconductor Ltd. Gate defined Schottky diode
JP4695402B2 (ja) * 2005-01-26 2011-06-08 パナソニック株式会社 ショットキーバリアダイオードの製造方法
JP2006310555A (ja) * 2005-04-28 2006-11-09 Nec Electronics Corp 半導体装置およびその製造方法
JP2006319096A (ja) * 2005-05-12 2006-11-24 Renesas Technology Corp ショットキーバリアダイオード
KR100763848B1 (ko) 2006-07-05 2007-10-05 삼성전자주식회사 쇼트키 다이오드 및 그 제조 방법
KR100780967B1 (ko) 2006-12-07 2007-12-03 삼성전자주식회사 고전압용 쇼트키 다이오드 구조체
US8168466B2 (en) * 2007-06-01 2012-05-01 Semiconductor Components Industries, Llc Schottky diode and method therefor
GB2451116A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Polysilicon devices
JP5085241B2 (ja) * 2007-09-06 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US8207559B2 (en) 2008-07-14 2012-06-26 Texas Instruments Incorporated Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures

Also Published As

Publication number Publication date
US8193602B2 (en) 2012-06-05
US20120244689A1 (en) 2012-09-27
CN102870222A (zh) 2013-01-09
WO2011133247A3 (en) 2011-12-22
JP2013527603A (ja) 2013-06-27
WO2011133247A2 (en) 2011-10-27
US8728920B2 (en) 2014-05-20
US20110254118A1 (en) 2011-10-20
CN102870222B (zh) 2016-06-29
TWI563671B (en) 2016-12-21
TW201145524A (en) 2011-12-16

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