TWI563671B - Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown - Google Patents

Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown

Info

Publication number
TWI563671B
TWI563671B TW100109483A TW100109483A TWI563671B TW I563671 B TWI563671 B TW I563671B TW 100109483 A TW100109483 A TW 100109483A TW 100109483 A TW100109483 A TW 100109483A TW I563671 B TWI563671 B TW I563671B
Authority
TW
Taiwan
Prior art keywords
reverse
optimization
control gate
schottky diode
state resistance
Prior art date
Application number
TW100109483A
Other languages
English (en)
Chinese (zh)
Other versions
TW201145524A (en
Inventor
Zia Alan Shafi
Jeffrey A Babcock
Original Assignee
Nat Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Semiconductor Corp filed Critical Nat Semiconductor Corp
Publication of TW201145524A publication Critical patent/TW201145524A/zh
Application granted granted Critical
Publication of TWI563671B publication Critical patent/TWI563671B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
TW100109483A 2010-04-20 2011-03-21 Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown TWI563671B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/763,287 US8193602B2 (en) 2010-04-20 2010-04-20 Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown

Publications (2)

Publication Number Publication Date
TW201145524A TW201145524A (en) 2011-12-16
TWI563671B true TWI563671B (en) 2016-12-21

Family

ID=44787623

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100109483A TWI563671B (en) 2010-04-20 2011-03-21 Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown

Country Status (5)

Country Link
US (2) US8193602B2 (enExample)
JP (1) JP5893003B2 (enExample)
CN (1) CN102870222B (enExample)
TW (1) TWI563671B (enExample)
WO (1) WO2011133247A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456773B (zh) * 2012-05-30 2016-03-16 中芯国际集成电路制造(上海)有限公司 肖特基二极管及其制造方法
US10069023B2 (en) * 2013-01-18 2018-09-04 Texas Instruments Incorporated Optical sensor with integrated pinhole
US12382736B2 (en) 2021-10-01 2025-08-05 Texas Instruments Incorporated Wide angle optical angle sensor
KR102854105B1 (ko) * 2024-04-24 2025-09-04 서울과학기술대학교 산학협력단 쇼트키 장벽 다이오드 및 이를 포함하는 반도체 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08195403A (ja) * 1995-01-18 1996-07-30 Murata Mfg Co Ltd 半導体装置
US6399413B1 (en) * 2000-04-18 2002-06-04 Agere Systems Guardian Corp. Self aligned gated Schottky diode guard ring structures
JP2006210479A (ja) * 2005-01-26 2006-08-10 Matsushita Electric Ind Co Ltd ショットキーバリアダイオードおよびその製造方法
US20080006899A1 (en) * 2006-07-05 2008-01-10 Samsung Electronics Co., Ltd. Schottky diode and method of fabricating the same
TW200849610A (en) * 2007-06-01 2008-12-16 Semiconductor Components Ind Schottky diode and method therefor
US20100032731A1 (en) * 2008-07-14 2010-02-11 Babcock Jeffrey A Schottky junction-field-effect-transistor (jfet) structures and methods of forming jfet structures

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201666A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体装置
DE69636818T2 (de) 1995-06-19 2007-11-08 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zur selbst-justierten Herstellung von implantierten Gebieten
US6784489B1 (en) * 1997-03-28 2004-08-31 Stmicroelectronics, Inc. Method of operating a vertical DMOS transistor with schottky diode body structure
US20050139860A1 (en) * 2003-10-22 2005-06-30 Snyder John P. Dynamic schottky barrier MOSFET device and method of manufacture
JP2005209710A (ja) * 2004-01-20 2005-08-04 Hitachi Ulsi Systems Co Ltd 半導体集積回路装置の製造方法
US7544557B2 (en) 2004-12-15 2009-06-09 Tower Semiconductor Ltd. Gate defined Schottky diode
JP2006310555A (ja) * 2005-04-28 2006-11-09 Nec Electronics Corp 半導体装置およびその製造方法
JP2006319096A (ja) * 2005-05-12 2006-11-24 Renesas Technology Corp ショットキーバリアダイオード
KR100780967B1 (ko) 2006-12-07 2007-12-03 삼성전자주식회사 고전압용 쇼트키 다이오드 구조체
GB2451116A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Polysilicon devices
JP5085241B2 (ja) * 2007-09-06 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08195403A (ja) * 1995-01-18 1996-07-30 Murata Mfg Co Ltd 半導体装置
US6399413B1 (en) * 2000-04-18 2002-06-04 Agere Systems Guardian Corp. Self aligned gated Schottky diode guard ring structures
JP2006210479A (ja) * 2005-01-26 2006-08-10 Matsushita Electric Ind Co Ltd ショットキーバリアダイオードおよびその製造方法
US20080006899A1 (en) * 2006-07-05 2008-01-10 Samsung Electronics Co., Ltd. Schottky diode and method of fabricating the same
TW200849610A (en) * 2007-06-01 2008-12-16 Semiconductor Components Ind Schottky diode and method therefor
US20100032731A1 (en) * 2008-07-14 2010-02-11 Babcock Jeffrey A Schottky junction-field-effect-transistor (jfet) structures and methods of forming jfet structures

Also Published As

Publication number Publication date
US8193602B2 (en) 2012-06-05
US20120244689A1 (en) 2012-09-27
CN102870222A (zh) 2013-01-09
WO2011133247A3 (en) 2011-12-22
JP2013527603A (ja) 2013-06-27
WO2011133247A2 (en) 2011-10-27
US8728920B2 (en) 2014-05-20
US20110254118A1 (en) 2011-10-20
CN102870222B (zh) 2016-06-29
JP5893003B2 (ja) 2016-03-23
TW201145524A (en) 2011-12-16

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