JP2013509730A5 - - Google Patents

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Publication number
JP2013509730A5
JP2013509730A5 JP2012537174A JP2012537174A JP2013509730A5 JP 2013509730 A5 JP2013509730 A5 JP 2013509730A5 JP 2012537174 A JP2012537174 A JP 2012537174A JP 2012537174 A JP2012537174 A JP 2012537174A JP 2013509730 A5 JP2013509730 A5 JP 2013509730A5
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JP
Japan
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region
floating protection
base
collector
floating
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JP2012537174A
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English (en)
Japanese (ja)
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JP5746199B2 (ja
JP2013509730A (ja
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Priority claimed from US12/611,074 external-priority patent/US8350352B2/en
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Publication of JP2013509730A publication Critical patent/JP2013509730A/ja
Publication of JP2013509730A5 publication Critical patent/JP2013509730A5/ja
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Publication of JP5746199B2 publication Critical patent/JP5746199B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012537174A 2009-11-02 2010-11-01 バイポーラトランジスタ Expired - Fee Related JP5746199B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/611,074 2009-11-02
US12/611,074 US8350352B2 (en) 2009-11-02 2009-11-02 Bipolar transistor
PCT/US2010/055000 WO2011053927A1 (en) 2009-11-02 2010-11-01 Bipolar transistor

Publications (3)

Publication Number Publication Date
JP2013509730A JP2013509730A (ja) 2013-03-14
JP2013509730A5 true JP2013509730A5 (enExample) 2013-10-24
JP5746199B2 JP5746199B2 (ja) 2015-07-08

Family

ID=43618000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012537174A Expired - Fee Related JP5746199B2 (ja) 2009-11-02 2010-11-01 バイポーラトランジスタ

Country Status (5)

Country Link
US (2) US8350352B2 (enExample)
EP (1) EP2497113A1 (enExample)
JP (1) JP5746199B2 (enExample)
CN (1) CN102668087B (enExample)
WO (1) WO2011053927A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination
JP7386123B2 (ja) * 2020-04-28 2023-11-24 株式会社東海理化電機製作所 半導体装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614749U (de) * 1949-12-05 1950-10-19 Patra Patent Treuhand Doppelfassung zur aufnahme von zwei parallel nebeneinander angeordneten rohrenden von leuchtroehren.
DE1614749A1 (de) 1967-01-07 1970-12-10 Telefunken Patent Integrierte Halbleiteranordnung
US3772577A (en) 1972-02-10 1973-11-13 Texas Instruments Inc Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same
JPS4991776A (enExample) * 1973-01-05 1974-09-02
JPS61278161A (ja) 1985-06-04 1986-12-09 Tdk Corp 高耐圧半導体装置
JPS61285764A (ja) * 1985-06-12 1986-12-16 Tdk Corp 高耐圧半導体装置
JP2979554B2 (ja) 1989-09-26 1999-11-15 株式会社デンソー 半導体装置の製造方法
DE58908843D1 (de) 1989-10-30 1995-02-09 Siemens Ag Eingangsschutzstruktur für integrierte Schaltungen.
JPH04506588A (ja) 1990-01-08 1992-11-12 ハリス　コーポレーシヨン 薄い、絶縁分離したアイランドに納められた、低いコレクタ抵抗を持つ、トランジスタ構造
US5247201A (en) * 1990-02-15 1993-09-21 Siemens Aktiengesellschaft Input protection structure for integrated circuits
JP3798808B2 (ja) * 1991-09-27 2006-07-19 ハリス・コーポレーション 高いアーリー電壓，高周波性能及び高降伏電壓特性を具備した相補型バイポーラトランジスター及びその製造方法
US5274267A (en) 1992-01-31 1993-12-28 International Business Machines Corporation Bipolar transistor with low extrinsic base resistance and low noise
JP3110852B2 (ja) 1992-04-08 2000-11-20 株式会社ブリヂストン 空気入りタイヤ
JPH05291270A (ja) * 1992-04-13 1993-11-05 Sharp Corp 半導体装置
JP2812093B2 (ja) * 1992-09-17 1998-10-15 株式会社日立製作所 プレーナ接合を有する半導体装置
SE513512C2 (sv) * 1994-10-31 2000-09-25 Ericsson Telefon Ab L M Halvledaranordning med ett flytande kollektorområde
US5629552A (en) * 1995-01-17 1997-05-13 Ixys Corporation Stable high voltage semiconductor device structure
JPH10172980A (ja) * 1996-12-13 1998-06-26 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP3906181B2 (ja) * 2003-05-26 2007-04-18 株式会社東芝 電力用半導体装置
US7737469B2 (en) 2006-05-16 2010-06-15 Kabushiki Kaisha Toshiba Semiconductor device having superjunction structure formed of p-type and n-type pillar regions
EP1936390A1 (en) * 2006-12-20 2008-06-25 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Semiconductor device for measuring ultra small electrical currents and small voltages
US8008734B2 (en) * 2007-01-11 2011-08-30 Fuji Electric Co., Ltd. Power semiconductor device
JP5205856B2 (ja) * 2007-01-11 2013-06-05 富士電機株式会社 電力用半導体素子

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