JP2014017487A5 - - Google Patents

Download PDF

Info

Publication number
JP2014017487A5
JP2014017487A5 JP2013143177A JP2013143177A JP2014017487A5 JP 2014017487 A5 JP2014017487 A5 JP 2014017487A5 JP 2013143177 A JP2013143177 A JP 2013143177A JP 2013143177 A JP2013143177 A JP 2013143177A JP 2014017487 A5 JP2014017487 A5 JP 2014017487A5
Authority
JP
Japan
Prior art keywords
region
collector
semiconductor
bipolar transistor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013143177A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014017487A (ja
JP6188205B2 (ja
Filing date
Publication date
Priority claimed from US13/545,746 external-priority patent/US9099489B2/en
Application filed filed Critical
Publication of JP2014017487A publication Critical patent/JP2014017487A/ja
Publication of JP2014017487A5 publication Critical patent/JP2014017487A5/ja
Application granted granted Critical
Publication of JP6188205B2 publication Critical patent/JP6188205B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013143177A 2012-07-10 2013-07-09 高降伏電圧を有するバイポーラトランジスタ Active JP6188205B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/545,746 US9099489B2 (en) 2012-07-10 2012-07-10 Bipolar transistor with high breakdown voltage
US13/545,746 2012-07-10

Publications (3)

Publication Number Publication Date
JP2014017487A JP2014017487A (ja) 2014-01-30
JP2014017487A5 true JP2014017487A5 (enExample) 2016-08-25
JP6188205B2 JP6188205B2 (ja) 2017-08-30

Family

ID=49913281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013143177A Active JP6188205B2 (ja) 2012-07-10 2013-07-09 高降伏電圧を有するバイポーラトランジスタ

Country Status (3)

Country Link
US (1) US9099489B2 (enExample)
JP (1) JP6188205B2 (enExample)
CN (1) CN103545358A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9577035B2 (en) * 2012-08-24 2017-02-21 Newport Fab, Llc Isolated through silicon vias in RF technologies
US10600894B2 (en) * 2018-07-03 2020-03-24 Qualcomm Incorporated Bipolar junction transistor and method of fabricating the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758356A (en) 1980-09-26 1982-04-08 Toshiba Corp Manufacture of semiconductor device
US4536945A (en) 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
JPS6348864A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH01129457A (ja) * 1987-11-16 1989-05-22 Oki Electric Ind Co Ltd 半導体装置
JPH0294527A (ja) * 1988-09-30 1990-04-05 Nec Yamagata Ltd 半導体装置
US5124271A (en) 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
US5217909A (en) * 1990-07-18 1993-06-08 Siemens Aktiengesellschaft Method for manufacturing a bipolar transistor
US4987089A (en) 1990-07-23 1991-01-22 Micron Technology, Inc. BiCMOS process and process for forming bipolar transistors on wafers also containing FETs
TW297142B (enExample) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
SE513512C2 (sv) * 1994-10-31 2000-09-25 Ericsson Telefon Ab L M Halvledaranordning med ett flytande kollektorområde
JPH11251240A (ja) * 1998-02-27 1999-09-17 Matsushita Electron Corp 半導体装置およびその製造方法
US6724066B2 (en) 2001-04-30 2004-04-20 Texas Instruments Incorporated High breakdown voltage transistor and method
JP2006186225A (ja) * 2004-12-28 2006-07-13 Nec Electronics Corp 半導体装置
US7375410B2 (en) 2004-02-25 2008-05-20 International Business Machines Corporation Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
JP2006066788A (ja) * 2004-08-30 2006-03-09 Mitsubishi Electric Corp 半導体装置
EP1643549B8 (en) 2004-09-30 2019-03-06 Infineon Technologies AG Method for producing vertical bipolar transistors and integrated circuit with vertical bipolar transistors
KR100832716B1 (ko) * 2006-12-27 2008-05-28 동부일렉트로닉스 주식회사 바이폴라 트랜지스터 및 그 제조방법
US8791546B2 (en) * 2010-10-21 2014-07-29 Freescale Semiconductor, Inc. Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations

Similar Documents

Publication Publication Date Title
US10879388B2 (en) Methods of reducing the electrical and thermal resistance of SiC substrates and device made thereby
US8963258B2 (en) FinFET with bottom SiGe layer in source/drain
US20120037954A1 (en) Equal Potential Ring Structures of Power Semiconductor with Trenched Contact
JP2013517633A5 (enExample)
US9741838B2 (en) Semiconductor device
JP2016541114A5 (ja) 半導体構造、集積回路構造、及びそれらの製造方法
CN104247025B (zh) 具有高发射极栅极电容的绝缘栅双极晶体管
JP2015109472A5 (enExample)
JP2013514632A5 (enExample)
JP2017168668A (ja) 半導体装置
CN105280631A (zh) 瞬时电压抑制元件及其制造方法
JP2018537858A5 (enExample)
JP2014157896A (ja) 半導体装置とその製造方法
TW201332020A (zh) 溝槽蕭特基位障二極體及其製造方法
TW201618300A (zh) 碳化矽場效電晶體
JP2019054070A5 (enExample)
WO2012106101A3 (en) A schottky barrier diode, a method of forming the diode and a design structure for the diode
JP2017139293A5 (enExample)
JP2020088155A5 (enExample)
JP2014017487A5 (enExample)
JP2011066158A5 (enExample)
TWI429073B (zh) 半導體結構及其形成方法
JP2018186233A5 (enExample)
CN103258861A (zh) 沟槽肖特基势垒二极管及其制造方法
CN103515450B (zh) 一种沟槽电荷补偿肖特基半导体装置及其制造方法