CN103545358A - 带有高击穿电压的双极晶体管 - Google Patents

带有高击穿电压的双极晶体管 Download PDF

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Publication number
CN103545358A
CN103545358A CN201310285429.5A CN201310285429A CN103545358A CN 103545358 A CN103545358 A CN 103545358A CN 201310285429 A CN201310285429 A CN 201310285429A CN 103545358 A CN103545358 A CN 103545358A
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CN
China
Prior art keywords
region
collector
emitter
base
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310285429.5A
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English (en)
Chinese (zh)
Inventor
林欣
D·J·布隆伯格
左将凯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN103545358A publication Critical patent/CN103545358A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/134—Emitter regions of BJTs of lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

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  • Bipolar Transistors (AREA)
CN201310285429.5A 2012-07-10 2013-07-09 带有高击穿电压的双极晶体管 Pending CN103545358A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/545,746 US9099489B2 (en) 2012-07-10 2012-07-10 Bipolar transistor with high breakdown voltage
US13/545,746 2012-07-10

Publications (1)

Publication Number Publication Date
CN103545358A true CN103545358A (zh) 2014-01-29

Family

ID=49913281

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310285429.5A Pending CN103545358A (zh) 2012-07-10 2013-07-09 带有高击穿电压的双极晶体管

Country Status (3)

Country Link
US (1) US9099489B2 (enExample)
JP (1) JP6188205B2 (enExample)
CN (1) CN103545358A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9577035B2 (en) * 2012-08-24 2017-02-21 Newport Fab, Llc Isolated through silicon vias in RF technologies
US10600894B2 (en) * 2018-07-03 2020-03-24 Qualcomm Incorporated Bipolar junction transistor and method of fabricating the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758356A (en) 1980-09-26 1982-04-08 Toshiba Corp Manufacture of semiconductor device
US4536945A (en) 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
JPS6348864A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH01129457A (ja) * 1987-11-16 1989-05-22 Oki Electric Ind Co Ltd 半導体装置
JPH0294527A (ja) * 1988-09-30 1990-04-05 Nec Yamagata Ltd 半導体装置
US5124271A (en) 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
US5217909A (en) * 1990-07-18 1993-06-08 Siemens Aktiengesellschaft Method for manufacturing a bipolar transistor
US4987089A (en) 1990-07-23 1991-01-22 Micron Technology, Inc. BiCMOS process and process for forming bipolar transistors on wafers also containing FETs
TW297142B (enExample) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
SE513512C2 (sv) * 1994-10-31 2000-09-25 Ericsson Telefon Ab L M Halvledaranordning med ett flytande kollektorområde
JPH11251240A (ja) * 1998-02-27 1999-09-17 Matsushita Electron Corp 半導体装置およびその製造方法
US6724066B2 (en) 2001-04-30 2004-04-20 Texas Instruments Incorporated High breakdown voltage transistor and method
JP2006186225A (ja) * 2004-12-28 2006-07-13 Nec Electronics Corp 半導体装置
US7375410B2 (en) 2004-02-25 2008-05-20 International Business Machines Corporation Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
JP2006066788A (ja) * 2004-08-30 2006-03-09 Mitsubishi Electric Corp 半導体装置
EP1643549B8 (en) 2004-09-30 2019-03-06 Infineon Technologies AG Method for producing vertical bipolar transistors and integrated circuit with vertical bipolar transistors
KR100832716B1 (ko) * 2006-12-27 2008-05-28 동부일렉트로닉스 주식회사 바이폴라 트랜지스터 및 그 제조방법
US8791546B2 (en) * 2010-10-21 2014-07-29 Freescale Semiconductor, Inc. Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations

Also Published As

Publication number Publication date
US20140015090A1 (en) 2014-01-16
JP2014017487A (ja) 2014-01-30
US9099489B2 (en) 2015-08-04
JP6188205B2 (ja) 2017-08-30

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140129