JP6188205B2 - 高降伏電圧を有するバイポーラトランジスタ - Google Patents

高降伏電圧を有するバイポーラトランジスタ Download PDF

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Publication number
JP6188205B2
JP6188205B2 JP2013143177A JP2013143177A JP6188205B2 JP 6188205 B2 JP6188205 B2 JP 6188205B2 JP 2013143177 A JP2013143177 A JP 2013143177A JP 2013143177 A JP2013143177 A JP 2013143177A JP 6188205 B2 JP6188205 B2 JP 6188205B2
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region
collector
semiconductor
conductivity type
bipolar transistor
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JP2013143177A
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Japanese (ja)
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JP2014017487A (ja
JP2014017487A5 (enExample
Inventor
リン シン
リン シン
ジェイ．ブロンバーグ ダニエル
ジェイ．ブロンバーグ ダニエル
ツオ ジアン−カイ
ツオ ジアン−カイ
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NXP USA Inc
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NXP USA Inc
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Publication of JP2014017487A5 publication Critical patent/JP2014017487A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/134—Emitter regions of BJTs of lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

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  • Bipolar Transistors (AREA)
JP2013143177A 2012-07-10 2013-07-09 高降伏電圧を有するバイポーラトランジスタ Active JP6188205B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/545,746 US9099489B2 (en) 2012-07-10 2012-07-10 Bipolar transistor with high breakdown voltage
US13/545,746 2012-07-10

Publications (3)

Publication Number Publication Date
JP2014017487A JP2014017487A (ja) 2014-01-30
JP2014017487A5 JP2014017487A5 (enExample) 2016-08-25
JP6188205B2 true JP6188205B2 (ja) 2017-08-30

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ID=49913281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013143177A Active JP6188205B2 (ja) 2012-07-10 2013-07-09 高降伏電圧を有するバイポーラトランジスタ

Country Status (3)

Country Link
US (1) US9099489B2 (enExample)
JP (1) JP6188205B2 (enExample)
CN (1) CN103545358A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9577035B2 (en) * 2012-08-24 2017-02-21 Newport Fab, Llc Isolated through silicon vias in RF technologies
US10600894B2 (en) * 2018-07-03 2020-03-24 Qualcomm Incorporated Bipolar junction transistor and method of fabricating the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758356A (en) 1980-09-26 1982-04-08 Toshiba Corp Manufacture of semiconductor device
US4536945A (en) 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
JPS6348864A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH01129457A (ja) * 1987-11-16 1989-05-22 Oki Electric Ind Co Ltd 半導体装置
JPH0294527A (ja) * 1988-09-30 1990-04-05 Nec Yamagata Ltd 半導体装置
US5124271A (en) 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
US5217909A (en) * 1990-07-18 1993-06-08 Siemens Aktiengesellschaft Method for manufacturing a bipolar transistor
US4987089A (en) 1990-07-23 1991-01-22 Micron Technology, Inc. BiCMOS process and process for forming bipolar transistors on wafers also containing FETs
TW297142B (enExample) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
SE513512C2 (sv) * 1994-10-31 2000-09-25 Ericsson Telefon Ab L M Halvledaranordning med ett flytande kollektorområde
JPH11251240A (ja) * 1998-02-27 1999-09-17 Matsushita Electron Corp 半導体装置およびその製造方法
US6724066B2 (en) 2001-04-30 2004-04-20 Texas Instruments Incorporated High breakdown voltage transistor and method
JP2006186225A (ja) * 2004-12-28 2006-07-13 Nec Electronics Corp 半導体装置
US7375410B2 (en) 2004-02-25 2008-05-20 International Business Machines Corporation Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
JP2006066788A (ja) * 2004-08-30 2006-03-09 Mitsubishi Electric Corp 半導体装置
EP1643549B8 (en) 2004-09-30 2019-03-06 Infineon Technologies AG Method for producing vertical bipolar transistors and integrated circuit with vertical bipolar transistors
KR100832716B1 (ko) * 2006-12-27 2008-05-28 동부일렉트로닉스 주식회사 바이폴라 트랜지스터 및 그 제조방법
US8791546B2 (en) * 2010-10-21 2014-07-29 Freescale Semiconductor, Inc. Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations

Also Published As

Publication number Publication date
US20140015090A1 (en) 2014-01-16
JP2014017487A (ja) 2014-01-30
US9099489B2 (en) 2015-08-04
CN103545358A (zh) 2014-01-29

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