TWI377626B - Schottky device and method of forming - Google Patents

Schottky device and method of forming Download PDF

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TWI377626B
TWI377626B TW095109559A TW95109559A TWI377626B TW I377626 B TWI377626 B TW I377626B TW 095109559 A TW095109559 A TW 095109559A TW 95109559 A TW95109559 A TW 95109559A TW I377626 B TWI377626 B TW I377626B
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TW200723408A (en
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Vishnu K Khemka
Vijay Parthasarathy
Ronghua Zhu
Amitava Bose
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Freescale Semiconductor Inc
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
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Description

1377626 九、發明說明： 【發明所屬之技術領域】 本揭示案大體而言係關於一種半導體元件及方法，且更 特定言之本揭示案係關於一種具有一肖特基元件之半導體 元件及將該肖特基元件安置於一半導體基板上之方法。 【先前技術】 習知之肖特基二極管一般具有高漏電流，其隨反向偏壓 之增大而快速增大，藉此劣化元件效能。另外，所得之肖 特基區域之高電場導致該肖特基區域被擊穿，從而潛在地 破壞處於相對低之擊穿電壓的元件。因此，一種限制漏電 流且提供一較大擊穿電壓之元件及方法將係有用的。 【發明内容】 本發明係關於肖特基元件及形成方法。 本發明所揭示之側向RESURF(減量之表面電場）肖特基 元件，其利用RESURF作用以使得該元件之肖特基區域對高 電場產生屏蔽。本發明介紹一種雙重RESURF肖特基元件， 其在一水平及垂直方向上耗盡含有肖特基接觸之區域，藉 此當反向偏壓增大時更有效地箝制該肖特基接觸上之電 場。此雙重RESURF作用導致一在反向偏壓狀態下較不易受 高漏電流之影響的肖特基元件。 【實施方式】 參看圖1至圖1 3較佳地瞭解本發明之肖特基元件。 圖1說明根據本發明之一特定實施例之安置於一塊體基 板10之位置5處之一肖特基元件的橫截面圖。本文之圖2至 I09317.doc 1377626 圖12揭示形成圖丨之肖特基元件之特定處理流程。 圖2說明一包括一上層21之塊體基板1〇β在一實施例中， 塊體基板10為一 Ρ型摻雜單晶基板之半導體基板（諸如， 矽）。然而，塊體基板10可包括其他實施例，例如絕緣體上 矽、籃寶石上矽 '砷化鎵及其類似物。在一實施例中使 用Ρ型摻雜濃度處於約lel5_iel9/cmA3範圍内之矽的塊體 基板1〇,而層21為導電率類型與塊體材料相反之基板的一 φ 摻雜部分。舉例而言，層21可為摻雜濃度處於約 lel8-3ei9/Cm-3範圍内、典型範圍為1_2乂1619/(^3的1^型摻 雜層。 在一實施例中，層21用以在最終元件内產生一^^型内埋層 (NBL)，且可藉由使用已知之摻雜劑植入技術植入一諸如銻 之N型物質而形成。 在一替代實施例中，無需獨立之層21。舉例而言，可使 用N型摻雜劑濃度處於lel8_3el9/cmA3或 • 圍内之一塊體基板而無需唯一摻雜之上層21。因此，在一 替代貫施例中，層21僅表示該塊體基板丨〇之一上方部分。 圖3說明形成一磊晶層12後之位置5。通常，磊晶層以將 包含一與塊體基板10類似之半導體材料。為達成討論之目 的’假定蟲晶層12為一覆蓋層21之磊晶矽層。所形成之磊 晶層12具有與層21相反之導電率類型，意即，當前實施方 式中所述之p型摻雜磊晶層。在多個實施例中，層12之厚度 處於2-4微米（micron)、25·3 5微米或3 25 3 75微米範圍 内。層12之典型Ρ型摻雜劑濃度處於約2-5el5/cmA3範圍 109317.doc 1377626 内。在一實施例中’磊晶形成後植入摻雜物質以形成掺雜 县晶層12。在另一實施例中，在蟲晶形成期間提供掺雜物 質。儘管圖2及3之特定實施例揭示一覆蓋塊體基板之蟲晶 層，但應瞭解’可在並不使用一蠢晶層之情況下產生本揭 示案之肖特基元件。舉例而言，層10可為一未經處理之塊 體基板，而層21及12可為該塊體基板之摻雜部分。 圖4說明形成一遮罩層1〇1後之位置5。遮罩層ι〇1具有一 φ 開口 121(圖4說明其之部分），其界定待形成以具有與磊晶層 12相反之導電率類型之一或多個井區的位置。儘管較重地 摻雜區域11’但區域11為導電率與磊晶層12相同之一摻雜 區域。舉例而言’區域η可具有圍内或 2-3el6/Cm~範圍内之摻雜濃度。如圖i所說明，僅區 之下方部分將保持於最終之肖特基元件中。在一實施例 中，層11藉由植入一諸如硼之p型物質而形成。 圖5說明形成N型區域22後之位置5,其包括圖！之肖特基 • 元件之漂移區。區域22通常藉由將同一遮罩層101用作該區 域而形成。區域22形成於一具有相反導電率類型之區域 内。舉例而言，當區域22為一 N型區域時，其在為區域n 與12之組合之p型區域内形成且與該p型區域相鄰。N型井 22之摻雜劑濃度處於約2-4ei6/cmA3，且可藉由在形成區域 11後植入磷而形成《應瞭解，可使用所述方法在同一半導 體兀件上同時形成多個井區。在一特定實施例中，與區域 22類似之井將含有邏輯元件。肖特基區域安置於區域^處 以提供反向偏壓狀態期間之電壓阻斷能力及正向偏壓時之 109317.doc 1377626 良好導通電阻特性，此將在本文中詳細討論。 圖6說明毒區域12及22内分別形成介電區域31及32後之 位置5。通常，該等介電區域31及32為使用任何適合之淺溝 槽隔離製程形成之氧化區域。在一替代實施例中介電區 域31及32可形成於區域12及22上。 圖7說明形成一與區域12之導電率類型相同之區域13後 之位置5。舉例而言，區域13可為一使用已知之遮罩技術所 • 形成之P型區域。在一特定實施例中，P型區域丨3被稱作一 p 沒體，且具有一大於區域12之約處於i_5el7/cmA3之摻雜劑 濃度且可藉由植入一諸如棚之p型物質形成。所說明之區域 12直接與區域22相鄰，然而區域12之部分可部分地或完全 地位於區域13與22之間。 圖8說明形成摻雜區域24後之位置5。摻雜區域24(亦稱作 沉降區）具有與層21相同之導電率類型（極性）且藉此電耦接 至内埋層21。區域24之摻雜劑濃度通常大於内埋層21之摻 籲 雜劑濃度’且處於1 e 1 7至1 e 1 9/cmA3範圍内。在一實施例 中’區域24藉由植入一諸如構之N型物質形成。圖9說明形 成摻雜區域14及23後之位置5。摻雜區域23產生稱作與共同 摻雜區域24及22之連結的接觸。摻雜區域14產生一與區域 13之連結’其中區域13與14為同一導電率類型。區域14及 23之典型摻雜劑濃度處於約5ei9-le20/cmA3範圍内。 圖1說明形成一導電層41後之位置5，由於導電層41本身 與下伏區域22之間具有一適當之功函數差異以形成一肖特 基區域25’因此導電層41之一部分為一與區域22之肖特基 109317.doc 1377626 接觸。在一實施例中’導電層41為藉由鈷金屬之沉積及退 火所形成之矽化物41。端子53經說明以連接至矽化物4 1 上。術語"端子"廣泛地用以指示與圖1之肖特基元件之一部 分建立介面之一導電元件或一導電元件之部分。端子之導 電率通常大於其所接觸之肖特基元件之區域的導電率。舉 例而言’ 一由金屬或重摻雜之聚矽形成之接觸通道或導電 跡線通常用以形成一端子。在一實施例中，矽化物41為形 成肖特基元件之陽極之導電結構的一部分，而端子52為與 井連結23建立介面且形成一至肖特基元件之陰極接觸的導 電結構的一部分。 應注意’圖1亦說明一連接45，其為一導電連接，諸如一 連接區域22之連結23與區域24之連結23的金屬跡線。端子 51及52可視為連接45之部分或與連接45分離。在一替代實 施例中，連接45可由陽極53與區域24之連結23之間的一連 接替代’此將在本文中進一步討論。 矽化物41與導電率類型相反之一第一區域及一第二區域 接觸。在一實施例中，第一區域為一由區域u、12、13及 14形成之P型區域，而第二區域為一由區域22及23形成之n 銮區域。肖特基元件之端子52經由連結區23電輕接至區域 22 » P型區域Π之至少一部分直接位於區域22下方且經由p 型區域12、1 3及1 4與矽化物4丨電接觸。 圖1 0說明一肖特基元件之一特定實施例的三維圖。應注 意，為達成清楚之目的並未說明矽化物41且其通常覆蓋絕 緣區域3 1與32之間的交錯結構，且與端子53(諸如圖1所示） 109317.doc -10- 1377626 接觸。更特定言之’圖10說明自肖特基元件之平面圖所查 看到之由區域13與22形成之交錯結構。舉例而言，一共同 介面位置131在區域22之一交錯結構與區域13之一交錯結 構之間共用，藉此產生一與肖特基元件之上表面大體上正 父之平坦介面。應注意’共同介面13 1並非沿區域12及22之 整個深度共用於區域13與22之間，且P型區域12之部分可與 區域22交界，藉此分離區域13與22。 區域22之交錯結構亦與區域13共用一共同介面132，從而 通常產生一與肖特基元件之上表面及由共同介面131形成 之平面大體上正交之平坦介面。應注意，區域u、12及13 構成一具有共同導電率類型之區域，且在區域22之交錯結 構與下伏區域11之間形成一大體上平坦之介面。此介面與 由共同介面131及132形成之平面大體上正交。在一實施例 中，區域1 3之P型父錯結構擴展至内埋層丨丨。在一替代實施 例中，區域13之P型交錯結構终止於區域22内。如本文所使 用，大體上正交之平面包括相對於彼此成9〇度角、85 95度 角及80-100度角之平面。 圖11說明本揭示案之一替代實施例的三維圖。特定言 之，圖11說明一與圖10所述之肖特基元件類似之肖特基元 件。然而，圖U之肖特基元件並不具有區域13與22之交錯 結構，而疋經說明以具有類似於並無交錯結構之區域i 3與 22的非交錯區域63與72。 在運作過程中，當正向偏壓時，圖丨所揭示之肖特基元件 自陽極53傳導電流至陰極52。然而，在反向偏壓狀態期間， 109317.doc 1377626 形成於N型區域22中之處於矽化物41下方之肖特基區域25 限制反向流動之電流。在反向偏壓狀態期間，圓丨之肖特基 元件形成一自多個方向擴展至區域22中之空乏區。第一， 區域22自左至右耗盡，意即，自圖i所說明之區域第二， 當區域13與22交錯時，區域22自進入說明圖1之頁面内且朝 向頁面外之方向耗盡。由於第一及第二耗盡作用在與大體 上平行於區域22與矽化物41之間之介面之平面平行的方向 φ 上空乏區22，因此該等第一及第二耗盡導致單一 RESURF(減量之表面電場）作用。最後，因為陰極52經由區 域24電連接至内埋層22，所以區域丨丨在反向偏屋期間耗 盡’藉此增強在反向偏壓期間與由區域2 2與石夕化物41之間 之介面所形成之平面大體上正交之第二平面上的區域22的 耗盡。當包括自下而上之耗盡作用時，該效應被稱作雙重 RESURF作用。 在反向偏壓期間，區域22中自左至右產生之空乏區隨反 φ 向偏壓之增大越過處於矽化物41下方之肖特基區域擴展至 絕緣區域32»隨著反向偏壓之增大，空乏區越過肖特基區 域之此擴展大體上籍制肖特基區域上之電場，且因此限制 流經肖特基區域之反向漏電流。由於此箝制效應，圖1之肖 特基元件與習知元件相比大體上較不易受反向偏壓狀態下 之向漏電流的影響。 在一替代實施例中，肖特基元件之陽極5 3而並非陰極5 2 可連接至區域2 4之連結2 3上。在此組態中，反向偏壓不會 導致區域11之耗盡或自層22之底部的雙重reSURF作用。 109317.doc 1377626 圖12說明本揭示案之一替代實施例的橫截面圖。特定言 之，圖1 2之肖特基元件與圖1之肖特基元件類似，且類似區 域共同编號。然而，圖12之肖特基元件僅建構單一區域 211，而並非建構具有共同導電率類型之獨立層η及13。在 形成矽化物41之前安置一介電層202且其將連結區23與肖 特基區域225分離。一N型區域222安置於磊晶層12内且覆蓋 P型區域211之一部分。應注意，已說明N型區域222顯著地 薄於先前實施例之N型區域22以便強調不同實施例中之n 型區域之厚度可變化的事實。形成矽化物41之後，一肖特 基區域225將產生於N型區域222處。圖12之元件之運作與圖 1類似，其中側向發生耗盡以便在高壓反向偏壓狀態期間保 護肖特基區域225。 圖13說明本揭示案之一替代實施例的橫截面圖。特定言 之，圖13之肖特基元件與圖12之肖特基元件類似。圖12與 圖13之間之類似區域共同編號。圖13之肖特基元件與圖12 之肖特基元件之不同之處在於一介電隔片204安置於區域 3 1與矽化物4 1之間之P型區域2 11上。以此方式，肖特基區 域225之長度為介電隔片202與204之間之距離。一導電連接 246將矽化物41連接至連結區14。 圖14說明本揭示案之一替代實施例的橫戴面圖^特定言 之’圖14之肖特基元件與圖10之肖特基元件類似。圖14與 圖1 0之間之類似區域共同編號。圖14之肖特基元件與圖1 〇 之肖特基元件之不同之處在於介電隔片232及233安置於區 域13及22内之基板10上。以此方式’肖特基區域之長度為 109317.doc -13- 1377626 介電隔片233與232之間之距離。一導電連接247將矽化物“ 連接至連結區14。 圓15說明利用一先前所述之雙重rESUrf終止之肖特基 元件的一替代實施例。圖15所說明之肖特基元件包括形成 4肖特基元件之複數個單位單元。特定識別—單位單元 362，且單位單元362包括一第一導電率類型（意即，p型）之 區域314,該區域314由一第二導電率類型（意即，^^型）之區 域312之一部分側向環繞且覆蓋該部分。另外，單位單元362 包括形成於區域312與導電層341之介面處之一肖特基接 觸。單位單元361亦以此類似方式形成，儘管單位單元361 之肖特基接觸面積歸因於介電層331而小於單位單元362之 肖特基接觸面積。.在正向偏壓狀態期間，電流自陽極353流 經單位單元之肖特基接觸至層321，且最終流經區域324及 323至陰極352中。應注意，區域312、層321、區域a及層 323均屬於1同導電率類型。為達成討論之目的，假定該 等區域及層之每一者為心，其中區域M2具有 1615_5616/啦八3之摻雜濃度，其與形成於元件之一不同位置 處之邏輯閘（未說明）之擴展摻雜類似，而層321、區域似 及層323 A別具有與先前所揭示之層2卜區域μ及層η之推 雜濃度類似的摻雜濃度。 在反向偏壓狀態期間，沿每— 區域之介面形成一 單位單元之Ν型區域與Ρ型 態而在區域313與314 大，則區域3 1 3與3 14 二乏區。此導致（例如）回應於反向偏壓狀 之間形成一空乏區。若反向偏壓足夠 之間的位置將完全耗盡，藉此阻止任 109317.doc 1377626 何電流反向流動。為了進一步有助於保護肖特基元件形 成一包含層311及層322之终止結構370。層311為一 p型層且 經形成以覆蓋且鄰接層321。層321亦處於N型層322下方且 與其鄰接，且與區域324側向鄰接。應注意，如自一形成肖 特基接觸之平面處所量測，層311與層321之間之介面之深 度381大於區域313之深度382。通常，層322之摻雜劑濃度 將略大於層3 12之摻雜劑濃度，但並非為嚴格必需的。在一 實施例中，層312之摻雜濃度將與先前描述之層22之摻雜濃 度類似。 圖16說明圖15之元件的平面圖，其中圖15之橫截面圓沿 圖16之線350所界定之平面。圖16包括複數個單位單元，包 括單位單元361-366 ’該等單位單元之每一者包括一由一 N 型區域環繞之P型結構。應瞭解，單位單元之形狀可變化。 舉例而言，儘管每一單位單元363_366大體上符合一圓形p 型結構，但替代形狀之p型結構可經使用以界定單位單元之 其他形狀（例如，可使用橢圓$、矩形、六邊形及條狀？型 結構）。在其與區域312之介面處形成肖特基接觸之導電層 341位於邊界342内。介電層321位於邊界342與332之間。終 止結構370位於邊界323與321之間。應注意在所說明之實 轭例中層322與終止結構370具有重合之邊界。如所說明， 區域324位於邊界323之外。終止結構37〇為一環繞單位單元 313-3 17之環形結構。如本文所使用，環形結構意謂具有一 中心開口之閉合形狀，例如閉合之圓形結構（諸如環）、閉合 之矩形結構（諸如，322所形成之矩形結構）及其他形狀之結 I09317.doc -15- 1377626 構。 在正向偏壓運行期間’終止結構370並不影響肖特基元件 之運作。然而，在反向偏壓狀態期間，一自層3丨丨（圖i5)向 上及向外擴展之空乏區有助於快速耗盡單位單元361之肖 特基接觸處及下方之N型區域3 12，從而保護與終止結構相 鄰之單位單元之肖特基元件以使其免受反向偏壓期間產生 之破壞性電場的影響。應注意，介電層331防止在單位單元 籲 3 61與終止結構3 7 〇之間形成一肖特基接觸；因此，至陰極 接觸323上之最近肖特基接觸為P型區域313與3 14之間的肖 特基接觸® 圖17說明根據本揭示案之一肖特基元件的一替代實施 例’其界定一環繞單位單元之P型結構的N型區域。環繞單 位單元之P型結構的N型區域包括區域312及區域410。在一 貫施例中’區域41〇為一具有5el6-5el7/cmA3範圍内之典型 摻雜濃度的NDPLI型植入《使用區域410可在並不劣化肖特 瞻 基元件之反向偏壓特徵的情況下增強正向傳導。 提供本文之方法及裝置以用於一通用實施。儘管使用某 些特定實例來描述本發明’但熟習此項技術者將顯而易見 該等實例係說明性的且存在諸多變化。舉例而言，可適用 於本文所教示之方法的多種類型之沉積及摻雜技術及元件 為當前可用的。此實例之一者可為使用至每一單位單元之p 型區域之重摻雜的接觸（連結）。亦應注意，儘管本文已詳細 展示且描述本揭示案之一實施例及其某些變體，但熟習此 項技術者將易於建構倂入本揭示案之教示中之諸多其他經 109317.doc .16- 變化之實施例。上文已就特 及問題之解決方法n …（益處、其他優點 方法“、 乂而，可導致任何益處、優點或解決 方法產生或使其變得更加 顯者之益處、優點、問題之解決 去及任何元件不應解釋為任 絲& 々牡1』次所有申请專利範圍之關 鍵'必而或本質特徵或要辛 ^ ^ 因此，本揭不案並非意欲限 文所述之特定形式，相反，本揭示案意欲涵蓋可適 二於本揭示案之精神及料内之該等替代物、修正及 构寺物。 。 【圖式簡單說明】 圖1說明根據本揭示案之—肖特基元件的橫截面圖； 圖2至圖9說明處於根據本揭示案之製造過程之不同階段 的圖1的肖特基元件； 圖1 〇及圖11說明柄诚太_ 土 根據本揭不案之特定實施例之圖1的肖 特基元件的三維圖； 圖12至圖14說明根據本揭示案之替代實施例之肖特基元 件的橫截面圖； 圖5及圖17 „兒明根據本揭示案之替代實施例之肖特基元 件的橫截面圖；及 圖16說明圖15之肖特基元件的平面圖。 【主要元件符號說明】 5 位置 10 塊體基板 11 區域 12 區域 109317.doc •】7 · 1377626 13 14 21 22 23 24 25 3 11377626 IX. Description of the Invention: [Technical Field] The present disclosure relates generally to a semiconductor device and method, and more particularly to a semiconductor device having a Schottky device and A method in which a Schottky element is disposed on a semiconductor substrate. [Prior Art] A conventional Schottky diode generally has a high leakage current which rapidly increases as the reverse bias voltage increases, thereby degrading the element performance. In addition, the high electric field of the resulting Schottky region causes the Schottky region to be broken down, potentially destroying the component at a relatively low breakdown voltage. Therefore, an element and method for limiting leakage current and providing a large breakdown voltage would be useful. SUMMARY OF THE INVENTION The present invention relates to a Schottky element and a method of forming the same. The lateral RESURF (Degraded Surface Electric Field) Schottky element disclosed in the present invention utilizes RESURF action to cause the Schottky region of the element to shield the high electric field. The present invention describes a dual RESURF Schottky element that depletes regions containing Schottky contacts in a horizontal and vertical direction, thereby more effectively clamping the Schottky contact as the reverse bias is increased. electric field. This double RESURF action results in a Schottky element that is less susceptible to high leakage currents in the reverse bias state. [Embodiment] The Schottky element of the present invention is preferably understood with reference to Figs. 1 to 13. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates a cross-sectional view of a Schottky element disposed at a location 5 of a body substrate 10 in accordance with a particular embodiment of the present invention. Figures 2 to I09317.doc 1377626 herein Figure 12 discloses a particular process flow for forming a Schottky element of the figure. 2 illustrates a bulk substrate 1 〇β including an upper layer 21. In one embodiment, the bulk substrate 10 is a semiconductor substrate (such as ruthenium) of a ruthenium-doped single crystal substrate. However, the bulk substrate 10 may include other embodiments, such as an insulator, a sapphire, a gallium arsenide, and the like. In one embodiment, a bulk substrate having a germanium-type doping concentration in the range of about lel5_iel9/cmA3 is used, and layer 21 is a φ-doped portion of the substrate having a conductivity type opposite to that of the bulk material. For example, layer 21 can be a doped layer having a doping concentration in the range of about l8-8 ei9/cm-3, typically in the range of 1_2 乂 1619 / (3). In one embodiment, layer 21 is used. To create a buried layer (NBL) within the final component, and can be formed by implanting a N-type species such as germanium using known dopant implantation techniques. In an alternate embodiment, Separate layer 21. For example, an N-type dopant concentration may be used in one of the bulk substrates of le8_3el9/cmA3 or • without the need to uniquely dope the upper layer 21. Thus, in an alternative embodiment, layer 21 Only the upper portion of the bulk substrate is shown. Figure 3 illustrates the position 5 after formation of an epitaxial layer 12. Typically, the epitaxial layer will comprise a semiconductor material similar to the bulk substrate 10. Purpose 'Assume that the insecticidal layer 12 is an epitaxial layer of a cap layer 21. The epitaxial layer 12 is formed to have a conductivity type opposite to that of the layer 21, that is, the p-type doping described in the current embodiment. Crystalline layer. In various embodiments, layer 12 has a thickness of 2-4 micron, 25·3 5 micron, or 3 25 3 75 Within the range of meters, the typical erbium-type dopant concentration of layer 12 is in the range of about 2-5el5/cmA3, 109317.doc 1377626. In one embodiment, the dopant is implanted after epitaxial formation to form a doped county layer. 12. In another embodiment, a dopant species is provided during the formation of the crystallites. Although the specific embodiments of Figures 2 and 3 disclose a layer of insecticide covering the bulk substrate, it should be understood that 'it may not be used The Schottky element of the present disclosure is produced in the case of a crystalline layer. For example, layer 10 can be an unprocessed bulk substrate, and layers 21 and 12 can be doped portions of the bulk substrate. The position 5 after forming a mask layer 1 〇 1 is illustrated. The mask layer ι 〇 1 has a φ opening 121 (part of which is illustrated in FIG. 4 ) which defines a conductivity type to be formed to have an opposite conductivity to the epitaxial layer 12 . The position of one or more well regions. Although the region 11' is heavily doped, the region 11 is one of the same doping regions as the epitaxial layer 12. For example, the region η may have a circumference or 2-3el6 Doping concentration in the range of /Cm~. As illustrated in Figure i, only the lower part of the zone will remain in the final SCHOTT In an embodiment, layer 11 is formed by implanting a p-type material such as boron. Figure 5 illustrates position 5 after formation of N-type region 22, which includes the Schottky component drift of Figure! The region 22 is typically formed by using the same mask layer 101 as the region. The region 22 is formed in a region of the opposite conductivity type. For example, when the region 22 is an N-type region, it is Formed in and adjacent to the p-type region of the combination of regions n and 12. The dopant concentration of the N-well 22 is between about 2-4 ei6/cmA3 and can be implanted by forming region 11 Formation of Phosphorus "It should be understood that a plurality of well regions can be simultaneously formed on the same semiconductor component using the method. In a particular embodiment, a well similar to region 22 will contain logic elements. The Schottky region is placed at the region to provide voltage blocking capability during reverse bias conditions and good on-resistance characteristics during forward biasing, which will be discussed in detail herein. Figure 6 illustrates the location 5 after the dielectric regions 31 and 32 are formed in the poison regions 12 and 22, respectively. Typically, the dielectric regions 31 and 32 are oxidized regions formed using any suitable shallow trench isolation process. Intervening electrical regions 31 and 32 may be formed on regions 12 and 22 in an alternate embodiment. Figure 7 illustrates a position 5 after forming a region 13 of the same conductivity type as region 12. For example, region 13 can be a P-type region formed using known masking techniques. In a particular embodiment, the P-type region 丨3 is referred to as a p-body and has a dopant concentration greater than about region 12 at i_5el7/cmA3 and can be implanted into a p-type material such as a shed. form. The illustrated region 12 is directly adjacent to the region 22, however portions of the region 12 may be partially or completely located between the regions 13 and 22. FIG. 8 illustrates the position 5 after the doped region 24 is formed. Doped region 24 (also referred to as a sinker region) has the same conductivity type (polarity) as layer 21 and is thereby electrically coupled to buried layer 21. The dopant concentration of region 24 is typically greater than the dopant concentration of buried layer 21 and is in the range of 1 e 17 7 to 1 e 1 9/cm A3. In one embodiment, the ' region 24 is formed by implanting an N-type material such as a structure. Figure 9 illustrates the position 5 after forming the doped regions 14 and 23. Doped region 23 produces a contact referred to as a bond to common doped regions 24 and 22. Doped region 14 produces a junction with region 13 wherein regions 13 and 14 are of the same conductivity type. Typical dopant concentrations for regions 14 and 23 are in the range of about 5 ei9-le20/cmA3. Figure 1 illustrates a position 5 after forming a conductive layer 41. Since the conductive layer 41 itself and the underlying region 22 have a suitable work function difference to form a Schottky region 25', one portion of the conductive layer 41 is a Area 22 of Schottky 109317.doc 1377626 contact. In one embodiment, the conductive layer 41 is a telluride 41 formed by deposition and annealing of cobalt metal. Terminal 53 is illustrated for connection to the telluride 4 1 . The term "terminal" is used broadly to refer to a portion of a conductive element or a conductive element that interfaces with one of the Schottky elements of Figure 1. The conductivity of the terminals is typically greater than the conductivity of the area of the Schottky element to which it contacts. For example, a contact channel or conductive trace formed of a metal or heavily doped polysilicon is typically used to form a terminal. In one embodiment, the telluride 41 is part of a conductive structure forming the anode of the Schottky element, and the terminal 52 is part of a conductive structure that establishes an interface with the well bond 23 and forms a cathode contact to the Schottky element. It should be noted that Fig. 1 also illustrates a connection 45 which is a conductive connection such as a metal trace connecting the junction 23 of the region 22 to the junction 23 of the region 24. Terminals 51 and 52 can be considered as part of or connected to connection 45. In an alternate embodiment, the connection 45 can be replaced by a connection between the anode 53 and the junction 23 of the region 24, which will be discussed further herein. The telluride 41 is in contact with one of the first region and the second region of the conductivity type. In one embodiment, the first region is a P-type region formed by regions u, 12, 13, and 14, and the second region is a n-turn region formed by regions 22 and 23. The terminal 52 of the Schottky element is electrically connected to the region via the connection region 23. At least a portion of the P-type region 直接 is directly below the region 22 and is in electrical contact with the germanide 4丨 via the p-type regions 12, 13 and 14. Figure 10 illustrates a three-dimensional view of a particular embodiment of a Schottky element. It should be noted that the telluride 41 is not illustrated for clarity and generally covers the staggered structure between the insulating regions 31 and 32 and is in contact with terminal 53 (such as shown in Figure 1) 109317.doc -10- 1377626. More specifically, Fig. 10 illustrates the staggered structure formed by regions 13 and 22 as seen from the plan view of the Schottky element. For example, a common interface location 131 is shared between one of the interlaced structures of region 22 and one of the interleaved structures of region 13, thereby creating a planar interface that is substantially positively normal to the upper surface of the Schottky element. It should be noted that the 'common interface 13 1 is not commonly used between the regions 13 and 22 along the entire depth of the regions 12 and 22, and portions of the P-type region 12 may interface with the region 22, thereby separating the regions 13 and 22. The staggered structure of region 22 also shares a common interface 132 with region 13, thereby generally producing a planar interface that is substantially orthogonal to the upper surface of the Schottky element and the plane formed by common interface 131. It should be noted that the regions u, 12 and 13 constitute a region of the common conductivity type and form a substantially flat interface between the staggered structure of the region 22 and the underlying region 11. This interface is substantially orthogonal to the plane formed by the common interfaces 131 and 132. In one embodiment, the P-type parent fault structure of region 13 extends to the buried layer 丨丨. In an alternate embodiment, the P-type staggered structure of region 13 terminates within region 22. As used herein, a substantially orthogonal plane includes planes that are at a 9 degree angle, an 85 95 degree angle, and an 80-100 degree angle with respect to each other. Figure 11 illustrates a three-dimensional view of an alternate embodiment of the present disclosure. In particular, Figure 11 illustrates a Schottky element similar to the Schottky element described in Figure 10. However, the Schottky element of Figure U does not have the staggered structure of regions 13 and 22, but is illustrated to have non-interleaved regions 63 and 72 similar to regions i 3 and 22 having no staggered structure. During operation, the Schottky element disclosed in Figure 传导 conducts current from anode 53 to cathode 52 when forward biased. However, during the reverse bias state, 109317.doc 1377626 is formed in the N-type region 22 and the Schottky region 25 below the germanide 41 limits the current flowing in the reverse direction. During the reverse bias state, the Schottky elements of the circle form a depletion region that extends from multiple directions into region 22. First, the area 22 is exhausted from left to right, that is, the area illustrated in Figure i is second. When the areas 13 and 22 are interlaced, the area 22 is self-contained in the direction of the page of Figure 1 and toward the outside of the page. Do it. Since the first and second depletion effects in the vacant region 22 in a direction φ parallel to the plane substantially parallel to the interface between the region 22 and the telluride 41, the first and second depletions result in a single RESURF ( Decrease the surface electric field). Finally, because the cathode 52 is electrically connected to the buried layer 22 via the region 24, the region 耗尽 is depleted during the reverse biased home' thereby enhancing the relationship between the reverse bias and the region 2 2 and the lithium 41 Depletion of the region 22 on the second plane that is substantially orthogonal to the plane formed by the interface. This effect is referred to as dual RESURF action when including bottom-up depletion. During reverse biasing, the depletion region from left to right in region 22 increases with the anti-φ bias and extends beyond the Schottky region below the germanide 41 to the insulating region 32» with reverse bias The increase, the expansion of the depletion region across the Schottky region substantially dominates the electric field on the Schottky region, and thus limits the reverse leakage current flowing through the Schottky region. Due to this clamping effect, the Schottky element of Figure 1 is substantially less susceptible to leakage currents in the reverse biased state than conventional components. In an alternate embodiment, the anode 53 of the Schottky element, rather than the cathode 5 2, may be coupled to the junction 2 3 of the region 24. In this configuration, the reverse bias does not result in depletion of region 11 or dual reSURF action from the bottom of layer 22. 109317.doc 1377626 Figure 12 illustrates a cross-sectional view of an alternate embodiment of the present disclosure. In particular, the Schottky elements of Figure 12 are similar to the Schottky elements of Figure 1, and similar regions are numbered together. However, the Schottky element of Figure 12 only constructs a single region 211, rather than constructing separate layers η and 13 of a common conductivity type. A dielectric layer 202 is disposed prior to formation of the telluride 41 and separates the junction region 23 from the Schottky region 225. An N-type region 222 is disposed within the epitaxial layer 12 and covers a portion of the P-type region 211. It should be noted that the fact that the N-type region 222 is significantly thinner than the N-type region 22 of the previous embodiment has been described to emphasize the fact that the thickness of the n-type region in different embodiments can vary. After the formation of the telluride 41, a Schottky region 225 will be produced at the N-type region 222. The operation of the elements of Figure 12 is similar to that of Figure 1, in which lateral depletion occurs to protect the Schottky region 225 during the high voltage reverse bias state. Figure 13 illustrates a cross-sectional view of an alternate embodiment of the present disclosure. In particular, the Schottky element of Figure 13 is similar to the Schottky element of Figure 12. Similar areas between Figure 12 and Figure 13 are numbered together. The Schottky element of Figure 13 differs from the Schottky element of Figure 12 in that a dielectric spacer 204 is disposed over the P-type region 21 between the region 31 and the germanide 41. In this manner, the length of the Schottky region 225 is the distance between the dielectric spacers 202 and 204. A conductive connection 246 connects the telluride 41 to the junction region 14. Figure 14 illustrates a cross-sectional view of an alternative embodiment of the present disclosure. The Schottky element of Figure 14 is similar to the Schottky element of Figure 10. The similar areas between Figure 14 and Figure 10 are numbered together. The Schottky element of Figure 14 differs from the Schottky element of Figure 1 in that dielectric spacers 232 and 233 are disposed on substrate 10 in regions 13 and 22. In this way the length of the Schottky region is 109317.doc -13 - 1377626 the distance between the dielectric spacers 233 and 232. A conductive connection 247 "connects the germanide to the bond region 14. Circle 15 illustrates an alternate embodiment of a Schottky device terminated with a dual rESUrf as previously described. The Schottky device illustrated in Figure 15 includes a 4 a plurality of unit cells of the special element, a specific identification unit cell 362, and the unit cell 362 includes a region 314 of a first conductivity type (ie, p-type), the region 314 being of a second conductivity type (meaning That is, a portion of the region 312 of the shape is laterally surrounded and covers the portion. In addition, the unit cell 362 includes a Schottky contact formed at the interface between the region 312 and the conductive layer 341. The unit cell 361 is similar thereto. The mode is formed, although the Schottky contact area of the unit cell 361 is less than the Schottky contact area of the unit cell 362 due to the dielectric layer 331. During the forward bias state, current flows from the anode 353 through the unit cell. Schottky contacts layer 321 and eventually flows through regions 324 and 323 into cathode 352. It should be noted that region 312, layer 321, region a, and layer 323 all belong to the same conductivity type. For purposes of discussion, assume Each of the regions and layers is a core, wherein the region M2 has a doping concentration of 1615_5616/la 8.3, which is similar to the extended doping of a logic gate (not illustrated) formed at a different position of the component, and The layer 321, the region-like layer 323 A has a doping concentration similar to that of the previously disclosed layer 2 and region η. During the reverse bias state, a layer is formed along the interface of each region. The Ν-type region of the unit cell and the Ρ-type region are larger in the regions 313 and 314, and the regions 3 1 3 and 3 14 are the second-depletion region. This causes, for example, a depletion region to be formed in response to the reverse biased shape. The position between the reverse biases is sufficient to be completely depleted, thereby preventing any current reverse flow of 109317.doc 1377626. To further assist in protecting the Schottky element, a termination structure 370 comprising layer 311 and layer 322 is formed. Layer 311 is a p-type layer and is formed to cover and adjoin layer 321. Layer 321 is also below and adjacent to N-type layer 322 and laterally adjacent to region 324. It should be noted that Schottky contact is formed from one. Measured at the plane, the layer between layer 311 and layer 321 The depth 381 of the face is greater than the depth 382 of the region 313. Typically, the dopant concentration of layer 322 will be slightly greater than the dopant concentration of layer 3 12, but is not strictly necessary. In one embodiment, the doping of layer 312 The concentration will be similar to the doping concentration of layer 22 previously described. Figure 16 illustrates a plan view of the elements of Figure 15, wherein the cross-section circle of Figure 15 is along a plane defined by line 350 of Figure 16. Figure 16 includes a plurality of unit cells, The unit cells 361-366 are included. Each of the unit cells includes a P-type structure surrounded by an N-type region. It should be understood that the shape of the unit cell can vary. For example, although each unit cell 363_366 generally conforms to a circular p-type structure, an alternative shape p-type structure can be used to define other shapes of unit cells (eg, ellipse $, rectangle, hexagon can be used) And strip-shaped structure). A conductive layer 341 that forms a Schottky contact at its interface with region 312 is located within boundary 342. Dielectric layer 321 is located between boundaries 342 and 332. The termination structure 370 is located between the boundaries 323 and 321 . It should be noted that layer 322 and termination structure 370 have coincident boundaries in the illustrated embodiment. As illustrated, region 324 is located outside of boundary 323. The termination structure 37 is a ring structure surrounding the unit cells 313-3. As used herein, a toroidal structure means a closed shape having a central opening, such as a closed circular structure (such as a ring), a closed rectangular structure (such as a rectangular structure formed by 322), and other shapes of knots I09317.doc -15- 1377626 Structure. Termination of the structure 370 during forward bias operation does not affect the operation of the Schottky element. However, during the reverse bias state, a depletion region extending upward and outward from the layer 3 (Fig. i5) helps to quickly deplete the Schottky contact of the unit cell 361 and the underlying N-type region 3 12, thereby protecting the Schottky element of the unit cell adjacent to the termination structure from the destructive electric field generated during reverse biasing. It should be noted that the dielectric layer 331 prevents a Schottky contact from being formed between the unit cell 3 61 and the termination structure 3 7 ;; therefore, the closest Schottky contact to the cathode contact 323 is the P-type regions 313 and 3 14 Inter-Schottky Contact® Figure 17 illustrates an alternative embodiment of a Schottky element in accordance with the present disclosure 'which defines an N-type region of a P-type structure surrounding a unit cell. The N-type region of the P-type structure surrounding the unit cell includes a region 312 and a region 410. In a consistent embodiment, the 'region 41' is an NDPLI-type implant having a typical doping concentration in the range of 5el6-5el7/cmA3. The use region 410 can be used without degrading the reverse bias characteristics of the Schottky element. In the case of enhanced forward conduction. The methods and apparatus herein are provided for a general implementation. Although certain specific examples are used to describe the invention, it will be apparent to those skilled in the art For example, various types of deposition and doping techniques and components that are applicable to the methods taught herein are currently available. One of the examples may be a heavily doped contact (link) using a p-type region to each unit cell. It should also be noted that, although an embodiment of the present disclosure and some variations thereof have been shown and described in detail herein, those skilled in the art will readily appreciate the many other embodiments of the present disclosure. 16- The embodiment of the change. The above-mentioned solutions to specific problems n ... (benefits, other advantages of the method ", can lead to any benefits, advantages or solutions to produce or make it more obvious benefits, advantages, problems to solve And any element shall not be construed as a key to the scope of all patent applications, or the essential features or singularity of the patent application. Therefore, this disclosure is not intended to limit the specific form described. The present disclosure is intended to cover such alternatives, modifications, and structures as may be included in the spirit and scope of the present disclosure. [FIG. 1 illustrates a Schottky component in accordance with the present disclosure. FIG. 2 to FIG. 9 illustrate the Schottky element of FIG. 1 at various stages of the manufacturing process in accordance with the present disclosure; FIG. 1 and FIG. 11 illustrate the specificity of the handle according to the present disclosure. FIG. 12 to FIG. 14 illustrate cross-sectional views of a Schottky element in accordance with an alternative embodiment of the present disclosure; FIGS. 5 and 17 Alternative embodiment of Schottky A cross-sectional view of the device; and Figure 16 illustrates a plan view of the Schottky element of Figure 15. [Explanation of main component symbols] 5 Position 10 Block substrate 11 Region 12 Region 109317.doc •] 7 · 1377626 13 14 21 22 23 24 25 3 1

41 45 51 52 53 6341 45 51 52 53 63

101 13 1 132 202 204 211 222 225 109317.doc 區域 區域 層 區域 區域 區域 肖特基區域 區域 絕緣區域 矽化物 連接 端子 端子 陽極 區域 區域 遮罩層 共同介面 共同介面 介電隔片 介電隔片 P型區域 N型區域 肖特基區域 -18- 1377626101 13 1 132 202 204 211 222 225 109317.doc Area Area Layer Area Area Area Schottky Area Area Insulation Area Telluride Connection Terminal Terminal Anode Area Area Mask Layer Common Interface Common Interface Dielectric Septum Dielectric Septum P Type Regional N-type area Schottky area -18- 1377626

232 233 246 247 311 312 313 314 321 322 323 324 331 332 341 342 350 352 353 361 362 363 370 381 介電隔片 介電隔片 導電連接 導電連接 層 N型區域 p型區域 p型區域 層 層 區域 區域 介電層 邊界 導電層 邊界 線 陰極 陽極 單位單元 單位單元 單位單元 終止結構 深度 109317.doc -19- 1377626 382 深度 410 區域232 233 246 247 311 312 313 321 321 322 323 324 331 332 341 342 350 352 353 361 362 363 370 381 Dielectric spacer Dielectric spacer Conductive connection Conductive connection layer N-type region p-type region p-type region layer region area Dielectric layer boundary Conductive layer boundary line Cathode anode Unit unit Unit unit Unit cell termination structure depth 109317.doc -19- 1377626 382 Depth 410 area

109317.doc •20109317.doc •20

Claims (1)

1377626 十、申請專利範圍： 一種形成一肖特基元件之方法，其包含： 在一半導體基板之/第一位置處形成—第_單位單 元，其中該第一單位單元包含一肖特基接觸及—第一導 電率類型之一結構，該結構由一第二導電率類型之一第 —區域側向環繞且覆蓋，其中該肖特基接觸係—至該第 一區域之肖特基接觸；1377626 X. Patent Application Range: A method of forming a Schottky device, comprising: forming a -th unit cell at a first position of a semiconductor substrate, wherein the first unit cell comprises a Schottky contact a structure of a first conductivity type, the structure being laterally surrounded and covered by a first region of a second conductivity type, wherein the Schottky contact system - a Schottky contact to the first region; 在該半導體基板之-第二位置處形成一終止 盆 包含： 〃 該第-導電率類型之-第二層，其覆蓋且鄰接該第 —層且鄰接該第一區域’其中-第-介面係由該第一 ::該第二層形成且該第一介面相對於該肖特基接觸 Γ成之—平面的深度大於最遠離則特基接觸所形 =平面之一位置處的該第-單位單元之該結構的 其覆蓋且鄰接該苐 三層與該第二層形 該第二導電率類型之一第三層， 二層，其中一第二介面係由該第 成；及 中，去6 T 战一陰極接觸；其 田 平面圖查看時，該終6士 位單元盥分认上 此、、。構係位於該第一單 平7^與孩陰極端子接觸之間。 平 2 ·如6月求項1之方法，苴中 位單k㈣結構構包含—環繞該第一單 八6玄第二層係該環形結構之一部 1093J7.doc 3·如請求項丨之方 元之複數個單二，:。進-步包含形成包括該第-單位單 4 ·如請求項1 $ 居夕^ 法，其進一步包含形成一電耦接至 層之陰極接觸。 电祸接至5亥第— 5. 如請求項 法，其進一步包含形成一電 層之該第-道恭十 电祸接至该第一 第一導電率類型的第二盆 經由該第_ F # $ ，、甲。亥陰極接觸係 捧雜劑二Γ輕接至該第一層且該第二區域具有- 6. 如請I!:大於該第一區域之推雜劑濃度。 7 ^ ^ 之方法，其中該第二區域鄰接該第-声 7·如請求項丨之古、土 ^ 4郇莰忒第二層。 該第-導雷主、、中該第-導電率類型係p型摻雜且 弟—導電率類型係N型摻雜。 ^如請求们之方法’其進 止結構及亨笛匕3形成一覆盍且鄰接該終 9 生 ΒΑ 早位單7L·之該結構的介電層。 °月求項1之方法，其中該第一層位於該第 邊如請求項9之方法“ ^第£域下方。 j】 ，其中該第一層鄰接該第一區域。 ."月求項1之方法，苴中兮i你留- a -F ^ '、 Μ早位卓711進一步包含位於該第 £域下方的單位單元。 12 項1之方法’其中該單位單元進一步包含位於一形 單位\特基接觸之導電結構下方且與該導電結構鄰接的 早位皁元。 13. —種肖特基元件，其包含· 二-半導體基板之一第—位置處之一第一單位單元， ”該第一早位包含—肖特基接觸及一第—導電率 I09317.doc 1377626 類塑之一結構，該結構由一第二導電率類型之一第一區 域側向環繞且覆蓋，其中該肖特基接觸係一至該第一= 域之肖特基接觸； 在該半導體基板之-第二位置處之_終止結構其包 含： 咕斥一导冤平 該第-導電率類型之-第二層’其覆蓋且鄰接該第Forming a termination basin at the second position of the semiconductor substrate comprises: 〃 the first conductivity type-second layer covering and adjacent to the first layer and adjacent to the first region 'the-first-interface system Formed by the first:: the second layer and the first interface is formed with respect to the Schottky contact - the depth of the plane is greater than the first unit at a position farthest from the farthest contact The structure of the unit covers and abuts the third layer and the second layer forms one of the second conductivity types, the third layer, the second layer, wherein a second interface is formed by the first; and T is a cathodic contact; when the field plan is viewed, the final 6-segment unit recognizes this. The structure is located between the first flat 7^ and the cathode terminal of the child. Ping 2 · As in June, the method of item 1, the 苴 median single k (four) structure contains - around the first single VIII 6 玄 second layer is one of the ring structure 1093J7.doc 3 · as requested The plural of the yuan is a single two,:. The further step includes forming the first unit unit 4, such as the request item 1 $, which further comprises forming a cathode contact electrically coupled to the layer. The electrical fault is connected to the 5th cemetery - 5. The method of claim, further comprising forming the first layer of the electrical layer to be connected to the second basin of the first first conductivity type via the first _F # $ ,, A. The cathode contact system is held to the first layer and the second region has - 6. If I!: greater than the dopant concentration of the first region. The method of 7 ^ ^, wherein the second region is adjacent to the first sound 7 · such as the request item 丨古,土 ^ 4 郇莰忒 second layer. The first-lead conductor, the first conductivity type is p-type doped, and the conductivity type is N-type doping. ^ The method of the requester's termination structure and the hexagram 3 form a dielectric layer of the structure adjacent to the terminal 7L. The method of claim 1, wherein the first layer is located at the first side as in the method of claim 9 "below the field. j], wherein the first layer is adjacent to the first area. . 1 method, 苴中兮i you leave - a -F ^ ', Μ早位卓711 further contains the unit cell below the tenth field. 12 item 1 method 'where the unit unit further contains the unit An early soap element below the conductive structure and adjacent to the conductive structure. 13. A Schottky element comprising one of the first unit cells at one of the first positions of the semiconductor substrate," The first early position includes a Schottky contact and a first conductivity-type I09317.doc 1377626-type plastic structure, the structure is laterally surrounded and covered by a first region of a second conductivity type, wherein the first a Schottky contact of the first contact region to the first = domain; a termination structure at a second position of the semiconductor substrate comprising: a first layer of the first conductivity type - a second layer 'It covers and abuts the first 一層且鄰接該第-區域’其中-第-介面係由該第一 層與該第二層形成且該第—介面相對於該肖特基接觸 所形成之-平面的深度大於最遠離該肖特基接觸所形 成之該平面之一位置處的該第—單位單元 深度； ^ 二層’其中-第二介面係由該第三層與該第二層形 成；及 在=半導體基板之1三位置處之—陰極接觸；其 虽自-平面圖查看時’該終止結構係位於該第一單 位早7L與該陰極端子接觸之間。 14.如請求項13之元件，复狄 . OD 〃、中忒，.、止、、、。構包含一環繞該第一 單元之球形結構，Η兮繁：T風及A 八 且δ玄第一層仏泫環形結構之一部 分0 電耦接至該第一層 覆蓋且鄰接該終止 。月求項13之元件，其進一步包含— 之陰極接觸。 1 6 ·如請求項1 3& 之70件，其進一步包含一 1093l7.doc 1377626 結構及該第-單位單元之該結構的介電層。 17·如請求項13之元件，直中兮欲 m 终止結構之該第-層位於該 第一區域下方。 18.如請求項13之元件，其中該 早位早兀進一步位於該第一 區域下方。 19·如請求項13之元件，其中該 早位單兀進一步位於一形成 該肖特基接觸之導電結構下方且 Γ万且與该導電結構鄰接。 20·種形成一肖特基元件之方法，其包含： 在—半導體基板之一第一付® 一 位置處形成一第一單位單 元’其中該第一單位嚴开治人 平皁兀包含一肖特基接觸及一第一導 電率類型之一結構’該結構由-第二導電率類型之一第 -區域側向環繞且覆蓋’其中該肖特基接觸係一至該第 一區域之肖特基接觸； 在該半導體基板之一第-办里+ 弟一位置處形成一終止結構，呈 包含： 〃 該第二導電率類型之一第—層； 該第一導電率類型之一第- 甘鬼 弟一層，其覆盍且鄰接該第 層且鄰接該第一區域，^ ^ 丹T —第一介面係由該第一 層與該第二層形成且兮笛 * , 战且β玄第—介面相對於該肖特基接觸 所形成之-平面的深度大於最遠離該肖特基接觸所形 ' /平面之位置處的該第一單位單元之該結構的 深度； 該第二導電率類型之_第 乐一層’其覆盍於且鄰接兮 第二層，苴中一第-介而私山 /、 弟—；丨面仏由該第三層與該第二層形 1093I7.doc ⑸7626 成， 形成一電耦接至該第一層的該第二導電率類型的第二 區域，其令該第二區域具有一大於該第三層之一摻雜劑 濃度的摻雜劑濃度； 、，形成連接至該第二區域之陰極接觸，其中，當自一 千面圖查看時’該終止結構係位於 陰極接觸之間；及 早位早兀與該 形成一覆蓋且鄰接該終 結構的介電層。 、，。構及該第-早位單元之該a layer adjacent to the first region' wherein the first interface is formed by the first layer and the second layer and the depth of the plane formed by the first interface relative to the Schottky contact is greater than the farthest from the Schott a depth of the first unit cell at a position of the plane formed by the base contact; ^ a second layer wherein the second interface is formed by the third layer and the second layer; and at a position of the semiconductor substrate Wherein - the cathode contact; the end structure is located between the first unit 7L and the cathode terminal contact, although viewed from a plan view. 14. For the elements of claim 13, Du Di. OD 忒, Lieutenant, ., 、, ,,. The structure includes a spherical structure surrounding the first unit, a plurality of T-wind and A VIII and a portion of the δ 第一 first layer 仏泫 ring structure is electrically coupled to the first layer to cover and abut the termination. The component of the monthly claim 13, which further comprises - a cathode contact. 1 6 - 70 of claim 1 3&, further comprising a 1093l7.doc 1377626 structure and a dielectric layer of the structure of the first unit cell. 17. The component of claim 13 wherein the first layer of the termination structure is located below the first region. 18. The element of claim 13, wherein the early bit is further located below the first region. 19. The component of claim 13, wherein the early bit is further located below a conductive structure forming the Schottky contact and is contiguous with the conductive structure. 20. A method of forming a Schottky device, comprising: forming a first unit cell at a position of a first substrate of a semiconductor substrate, wherein the first unit is a saponin containing a saponin a special contact type and a structure of a first conductivity type 'the structure laterally surrounding and covering the first region of the second conductivity type and covering the Schottky of the Schottky contact system to the first region Contacting: forming a termination structure at a position of the first substrate of the semiconductor substrate, comprising: 之一 one of the second conductivity types, the first layer; the first conductivity type a layer of a layer that is adjacent to the first layer and adjacent to the first region, ^ ^ 丹 T - the first interface is formed by the first layer and the second layer and is 兮 , , , β β β β β β β The depth of the plane formed with respect to the Schottky contact is greater than the depth of the structure of the first unit cell farthest from the '/plane of the Schottky contact; the second conductivity type The first layer of 'they' is covered and adjacent to The second layer, the middle one is the first and the other is the private mountain, and the younger one is formed by the third layer and the second layer 1093I7.doc (5) 7626 to form an electrical coupling to the first layer. a second region of the second conductivity type, the second region having a dopant concentration greater than a dopant concentration of the third layer; forming a cathode contact connected to the second region, wherein When viewed from a thousand-sided view, the termination structure is located between the cathode contacts; and the early formation is preceded by a dielectric layer that covers and abuts the final structure. ,,. Constructing the first-early unit 109317.doc109317.doc
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