JP2013232562A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013232562A JP2013232562A JP2012104230A JP2012104230A JP2013232562A JP 2013232562 A JP2013232562 A JP 2013232562A JP 2012104230 A JP2012104230 A JP 2012104230A JP 2012104230 A JP2012104230 A JP 2012104230A JP 2013232562 A JP2013232562 A JP 2013232562A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 288
- 239000010410 layer Substances 0.000 claims abstract description 138
- 239000000758 substrate Substances 0.000 claims abstract description 59
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- 230000015556 catabolic process Effects 0.000 claims description 72
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 31
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
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- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
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- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 238000002513 implantation Methods 0.000 description 1
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Abstract
【解決手段】活性領域100aにおいて、n+半導体基板1上のn-ドリフト層2の表面層には、p+領域3が選択的に設けられている。n-ドリフト層2およびp+領域3の表面には、pベース層4が設けられている。pベース層4には、MOS構造が設けられている。活性領域100aのMOS構造が形成されていない部分には、p+領域3上にp+領域33が設けられている。p+領域33は、ソース電極10と接する。耐圧構造領域100bには、活性領域100aを囲むように、少なくともp-領域21からなるJTE構造13が設けられている。JTE構造13は、p+領域3およびpベース層4から離れて設けられている。また、活性領域100aと耐圧構造領域100bとの境界近傍の、MOS構造が形成されていない部分において、p-領域21はp+領域33に接する。
【選択図】図1
Description
実施の形態1にかかる半導体装置について、半導体材料として炭化珪素(SiC)を用いた縦型プレーナーゲート構造のSiC−MOSFETを例に説明する。図1は、実施の形態1にかかる半導体装置の構成を示す断面図である。図1(a)には、オン時に電流が流れる活性領域100aにおける1つの素子構造の断面構造を示す。図示省略するが、活性領域100aには、図1(a)に示す素子構造が複数並列して設けられている。図1(b)には、活性領域100aの最外周部を囲み、耐圧を保持する耐圧構造領域100bの断面構造を模式的に示す(以下、図5〜12においても同様)。
実施の形態2にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、n+炭化珪素基板1の主面が例えば<1120>方向に4度程度のオフ角を有する(0001)面である点である。実施の形態2にかかる半導体装置のそれ以外の構成は、実施の形態1にかかる半導体装置と同様である。実施の形態2にかかる半導体装置の製造方法は、実施の形態1にかかる半導体装置の製造方法と同様である。
実施の形態3にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、p+領域3に代えて、n-ドリフト層2の表面層にpベース層(第1の第2導電型半導体領域)4を選択的に形成する点である。pベース層4は、イオン注入法によりn-ドリフト層2の表面層に選択的に形成される。すなわち、実施の形態3にかかる半導体装置においては、p+領域3およびnウェル領域7が設けられていない。また、実施の形態3にかかる半導体装置のそれ以外の構成は、実施の形態1にかかる半導体装置と同様である。
実施の形態4にかかる半導体装置が実施の形態3にかかる半導体装置と異なる点は、n+炭化珪素基板1の主面が例えば<1120>方向に4度程度のオフ角を有する(0001)面である点である。実施の形態4にかかる半導体装置のそれ以外の構成は、実施の形態3にかかる半導体装置と同様である。実施の形態4にかかる半導体装置の製造方法は、実施の形態3にかかる半導体装置の製造方法と同様である。
2 n-ドリフト層
3 p+領域
4 pベース層
5 n+ソース領域
6 p+コンタクト領域
7 nウェル領域
8 ゲート絶縁膜
9 ゲート電極
10 ソース電極
11 層間絶縁膜
12 パッシベーション保護膜
13 JTE構造
100a 活性領域
100b 耐圧構造領域
Claims (11)
- 半導体基板に設けられた活性領域と、前記活性領域を囲むように前記半導体基板に設けられた耐圧構造領域と、を有する半導体装置であって、
前記活性領域は、
前記半導体基板上に設けられた、前記半導体基板よりも不純物濃度が低い第1導電型半導体層と、
前記第1導電型半導体層の前記半導体基板側に対して反対側の表面層に、前記活性領域と前記耐圧構造領域との境界に達するように選択的に設けられた第1の第2導電型半導体領域と、
前記第1の第2導電型半導体領域に電気的に接続された入力電極と、
少なくとも前記第1の第2導電型半導体領域および前記入力電極で構成されたおもて面素子構造と、
前記半導体基板の裏面に設けられた出力電極と、
前記おもて面素子構造が設けられた領域を除く領域に、前記第1の第2導電型半導体領域に接し、かつ前記活性領域と前記耐圧構造領域との境界位置まで設けられた第2の第2導電型半導体領域と、
を備え、
前記耐圧構造領域は、
前記第1導電型半導体層の前記半導体基板側に対して反対側の表面層に、前記活性領域と前記耐圧構造領域との境界から離れて設けられた、前記第1の第2導電型半導体領域よりも不純物濃度の低い複数の第3の第2導電型半導体領域を備え、
前記第2の第2導電型半導体領域は、前記入力電極に接し、
複数の前記第3の第2導電型半導体領域のうち、少なくとも最も前記活性領域側の前記第3の第2導電型半導体領域は、前記活性領域と前記耐圧構造領域との境界近傍において前記第2の第2導電型半導体領域に電気的に接続されていることを特徴とする半導体装置。 - 前記おもて面素子構造は、さらに、
前記第1導電型半導体層および前記第1の第2導電型半導体領域の上に設けられた、前記第1の第2導電型半導体領域よりも不純物濃度が低い第2導電型半導体層と、
前記第2導電型半導体層の前記第1の第2導電型半導体領域側に対して反対側の表面層に選択的に形成された第4の第1導電型半導体領域と、
前記第2導電型半導体層を深さ方向に貫通し、前記第1導電型半導体層に達する第5の第1導電型半導体領域と、
前記第2導電型半導体層の、前記第4の第1導電型半導体領域と前記第5の第1導電型半導体領域とに挟まれた部分の表面にゲート絶縁膜を介して設けられたゲート電極と、
前記第4の第1導電型半導体領域および前記第2導電型半導体層に接する前記入力電極と、で構成されていることを特徴とする請求項1に記載の半導体装置。 - 複数の前記第3の第2導電型半導体領域は、前記第1の第2導電型半導体領域および前記第2導電型半導体層から離れて設けられていることを特徴とする請求項1または2に記載の半導体装置。
- 複数の前記第3の第2導電型半導体領域のうち、少なくとも最も前記活性領域側の前記第3の第2導電型半導体領域の前記活性領域側の端部と、前記第1の第2導電型半導体領域の前記耐圧構造領域の端部との距離は、20μm以下であることを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。
- 複数の前記第3の第2導電型半導体領域のうち、少なくとも最も前記活性領域側の前記第3の第2導電型半導体領域の前記活性領域側の端部と、前記第2導電型半導体層の前記耐圧構造領域の端部との距離は、20μm以下であることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記第2導電型半導体層は、エピタキシャル成長法により形成されたエピタキシャル層であることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 前記第1導電型半導体層は、エピタキシャル成長法により形成されたエピタキシャル層であることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置。
- 前記第1の第2導電型半導体領域、前記第4の第1導電型半導体領域、前記第5の第1導電型半導体領域は、イオン注入法により形成された不純物拡散領域であることを特徴とする請求項1〜7のいずれか一つに記載の半導体装置。
- 前記半導体基板は、炭化珪素であることを特徴とする請求項1〜8のいずれか一つに記載の半導体装置。
- 前記半導体基板のおもて面は、(000−1)面に平行な面または(000−1)面に対して10度以内の傾きをもつ面であることを特徴とする請求項1〜9のいずれか一つに記載の半導体装置。
- 前記半導体基板のおもて面は、(0001)面に平行な面または(0001)面に対して10度以内の傾きをもつ面であることを特徴とする請求項1〜9のいずれか一つに記載の半導体装置。
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