JP2013214767A - スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 - Google Patents
スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 Download PDFInfo
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- JP2013214767A JP2013214767A JP2013140491A JP2013140491A JP2013214767A JP 2013214767 A JP2013214767 A JP 2013214767A JP 2013140491 A JP2013140491 A JP 2013140491A JP 2013140491 A JP2013140491 A JP 2013140491A JP 2013214767 A JP2013214767 A JP 2013214767A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】特定の実施形態では、本方法は、メモリセルの安定動作を可能にする磁気トンネル接合(MTJ)構造のスイッチング電流比を決定することを含む。メモリセルは、アクセストランジスタに直列に結合されたMTJ構造を含む。本方法は、MTJ構造の自由層に入射するオフセット磁場を変更することも含む。変更されたオフセット磁場によって、MTJ構造がそのスイッチング電流比を示すようにする。
【選択図】図5
Description
102 メモリアレイ
104 ビットライン
106 ビットライン論理回路
108 ワードライン
110 ワードライン論理回路
112 アンプ
Claims (3)
- 複数のメモリセルを備えたメモリデバイスを備えた装置であって、
前記複数のメモリセルのうち少なくとも一つのメモリセルが、磁気トンネル接合(MTJ)構造、及び前記MTJ構造に結合されたアクセストランジスタを備え、
前記MTJ構造の自由層の磁気モーメントが、第一の状態では前記MTJ構造のピンド層の磁気モーメントに対して実質的に平行であり、第二の状態では前記ピンド層の磁気モーメントに対して実質的に反平行であり、
前記MTJ構造を前記第一の状態から前記第二の状態にスイッチさせる第一のスイッチング電流の大きさの比が、前記MTJ構造を前記第二の状態から前記第一の状態にスイッチさせる第二のスイッチング電流の半分未満である、装置。 - 少なくとも一つの半導体ダイに集積された請求項1に記載の装置。
- 前記メモリデバイスが集積されるセットトップボックス、ミュージックプレイヤ、ビデオプレイヤ、エンターテイメントユニット、ナビゲーションデバイス、通信デバイス、PDA、固定データユニット、及びコンピュータから成る群から選択されたデバイスを更に備えた請求項1に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/396,295 | 2009-03-02 | ||
US12/396,295 US8587993B2 (en) | 2009-03-02 | 2009-03-02 | Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM) |
Related Parent Applications (1)
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JP2011553016A Division JP5426694B2 (ja) | 2009-03-02 | 2010-03-02 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
Publications (2)
Publication Number | Publication Date |
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JP2013214767A true JP2013214767A (ja) | 2013-10-17 |
JP6000908B2 JP6000908B2 (ja) | 2016-10-05 |
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Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
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JP2011553016A Expired - Fee Related JP5426694B2 (ja) | 2009-03-02 | 2010-03-02 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
JP2013140490A Active JP6214246B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
JP2013140491A Active JP6000908B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
JP2013140492A Active JP5752750B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
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JP2011553016A Expired - Fee Related JP5426694B2 (ja) | 2009-03-02 | 2010-03-02 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
JP2013140490A Active JP6214246B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
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JP2013140492A Active JP5752750B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
Country Status (10)
Country | Link |
---|---|
US (4) | US8587993B2 (ja) |
EP (1) | EP2404298B1 (ja) |
JP (4) | JP5426694B2 (ja) |
KR (1) | KR101293610B1 (ja) |
CN (2) | CN104282327B (ja) |
BR (1) | BRPI1009229A2 (ja) |
HR (1) | HRP20161195T1 (ja) |
SM (1) | SMT201600438B (ja) |
TW (1) | TW201106353A (ja) |
WO (1) | WO2010101860A2 (ja) |
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- 2010-03-02 CN CN201410563657.9A patent/CN104282327B/zh not_active Expired - Fee Related
- 2010-03-02 TW TW099106059A patent/TW201106353A/zh unknown
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- 2010-03-02 CN CN201080009766.6A patent/CN102334166B/zh not_active Expired - Fee Related
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- 2010-03-02 BR BRPI1009229A patent/BRPI1009229A2/pt not_active IP Right Cessation
- 2010-03-02 EP EP10709600.0A patent/EP2404298B1/en active Active
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KR101293610B1 (ko) | 2013-08-13 |
HRP20161195T1 (hr) | 2016-11-04 |
JP6214246B2 (ja) | 2017-10-18 |
CN104282327A (zh) | 2015-01-14 |
US20150349244A1 (en) | 2015-12-03 |
WO2010101860A3 (en) | 2010-11-11 |
CN102334166B (zh) | 2014-11-26 |
TW201106353A (en) | 2011-02-16 |
EP2404298A2 (en) | 2012-01-11 |
BRPI1009229A2 (pt) | 2016-03-15 |
JP2013214768A (ja) | 2013-10-17 |
US8587993B2 (en) | 2013-11-19 |
JP5752750B2 (ja) | 2015-07-22 |
US20130161771A1 (en) | 2013-06-27 |
JP6000908B2 (ja) | 2016-10-05 |
JP5426694B2 (ja) | 2014-02-26 |
US20140015077A1 (en) | 2014-01-16 |
SMT201600438B (it) | 2017-01-10 |
CN104282327B (zh) | 2017-06-23 |
JP2012519348A (ja) | 2012-08-23 |
KR20110134447A (ko) | 2011-12-14 |
US20100220516A1 (en) | 2010-09-02 |
CN102334166A (zh) | 2012-01-25 |
US9105340B2 (en) | 2015-08-11 |
JP2013214766A (ja) | 2013-10-17 |
US9368715B2 (en) | 2016-06-14 |
US8913423B2 (en) | 2014-12-16 |
WO2010101860A2 (en) | 2010-09-10 |
EP2404298B1 (en) | 2016-08-31 |
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