HRP20161195T1 - Smanjenje efekta opterećenja izvora kod spin prijenosa sile magnetnootporne memorije s nasumičnim pristupom (stt-mram) - Google Patents
Smanjenje efekta opterećenja izvora kod spin prijenosa sile magnetnootporne memorije s nasumičnim pristupom (stt-mram) Download PDFInfo
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- HRP20161195T1 HRP20161195T1 HRP20161195TT HRP20161195T HRP20161195T1 HR P20161195 T1 HRP20161195 T1 HR P20161195T1 HR P20161195T T HRP20161195T T HR P20161195TT HR P20161195 T HRP20161195 T HR P20161195T HR P20161195 T1 HRP20161195 T1 HR P20161195T1
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- mtj structure
- alternating current
- memory cell
- magnetic field
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- 230000000694 effects Effects 0.000 title claims 2
- 238000012546 transfer Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 claims 12
- 230000006978 adaptation Effects 0.000 claims 3
- 238000013461 design Methods 0.000 claims 2
- 238000012986 modification Methods 0.000 claims 2
- 230000004048 modification Effects 0.000 claims 2
- 230000006399 behavior Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000004590 computer program Methods 0.000 claims 1
- 238000013500 data storage Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000013178 mathematical model Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000012360 testing method Methods 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Claims (15)
1. Postupak dizajniranja memorijske ćelije koja obuhvaća MTJ strukturu spojenu s pristupnim odašiljačem, postupak obuhvaća:
uporabu računalnog programa za :
određivanje izmjeničnog omjera MTJ strukture koja smanjuje efekt opterećenja izvora memorijske ćelije, omjer izmjenične struje predstavlja omjer:
prvi omjer izmjenične struje potreban za promjenu MTJ strukture od stanja visokog otpora do stanja niskog otpora; od jačine struje potrebne za drugo prebacivanje za prebacivanje MTJ strukture od stanja niskog otpora do stanja visokog otpora; i
prilagođavanja dizajna barem jednog sloja MTJ strukture da modificira offset magnetsko polje koje je vezano za slobodni sloj MTJ strukture, na način da offset magnetsko polje uzrokuje da MTJ struktura pokazuje omjer izmjenične struje.
2. Postupak sukladno zahtjevu 1, pri čemu prilagodba obuhvaća prilagođavanje memorijske ćelije iz prve konfiguracije koja ima pristupni odašiljač električno spojen s pričvršćenim slojem MJT strukture drugoj konfiguraciji koja ima pristupni tranzistor električno spojen sa slobodnim slojem MTJ strukture.
3. Postupak sukladno zahtjevu 2, pri čemu prilagodba memorijske ćelije iz prve do druge konfiguracije uključuje promjenu redoslijeda slaganja slobodnog i pričvršćenog sloja.
4. Postupak sukladno zahtjevu 2, pri čemu prilagodba memorijske ćelije iz prve do druge konfiguracije uključuje promjenu trase vodećeg puta između pristupnog odašiljača i MTJ strukture.
5. Postupak sukladno zahtjevu 1, pri čemu određivanje omjera izmjenične struje obuhvaća: određivanje izmjenične karakteristike memorijske ćelije; i izvođenje analize linije opterećenja prijemnika kako bi se odredio omjer izmjenične struje.
6. Postupak sukladno zahtjevu 1, nadalje obuhvaća: određivanje količine modifikacije offset magnetskog polja temeljem magnitude omjera izmjenične struje.
7. Postupak sukladno zahtjevu 6, pri čemu je količina modifikacije offset magnetskog polja određena pomoću barem jednog od matematičkih modela i empirijskih modela veze između omjera izmjenične struje, offset magnetskog polja, i snage polja izmjenične struje.
8. Postupak sukladno zahtjevu 1, pri čemu prilagodba dizajna barem jednog sloja MTJ strukture obuhvaća prilagodbu debljine pričvršćenog sloja MTJ strukture.
9. Postupak sukladno zahtjevu 8, nadalje obuhvaća, prije prilagođavanja debljine pričvršćenog sloja: proizvodnju memorijske ćelije;
mjerenje spin prijenosa sile (STT) mijenjanjem karakteristika memorijske ćelije;
provođenje linije opterećenja prijenosnika kako bi se odredio omjer izmjenične struje;
primjenu vanjskog magnetnog polja kako bi se simuliralo djelovanje MTJ strukture s prilagođenom debljinom pričvršćenog sloja; i
testiranje termalne stabilnosti memorijske ćelije u prisutnostot eksternog magnetskog polja.
10. Postupak sukladno zahtjevu 9, pri čemu je omjer izmjenične struje manji od neprilagođenog omjera izmjenične struje MTJ strukture bez offset magnetskog polja i pri čemu je pričvršćeni sloj sintetički sloj koji uključuje:
prvi magnetski sloj koji je odmah uz slobodan sloj; i
drugi magnetski sloj koji ima magnetski moment koji je antiparalelan magnetskom momentu prvog magnetskog sloja,
pri čemu prilagodba gustoće pričvršćenog sloja obuhvaća smanjenje gustoće drugog magnetskog sloja kako bi se na offset magnetskog polja primijenio negativni pomak.
11. Uređaj obuhvaća:
memorijsku ćeliju koja obuhvaća:
strukturu magnetskog tunelskog spoja (MTJ) koja uključuje:
slobodni sloj spojen na bit liniju; i
pričvršćeni sloj, pri čemu je magnetski moment slobodnog sloja supstancijalno paralelan magnetskom momentu pričvršćenog sloja u prvom stanju i supstancijalno antiparalelan magnetskom momentu pričvršćenog sloja u drugom stanju,
naznačen time što
pričvršćeni sloj ima fizičku dimenziju za proizvodnju offset magnetskog polja koje odgovara prvoj izmjeničnoj struji MTJ strukture kako bi se omogućilo izmjenjivanje između prvog i drugog stanja kada je prvi napon primijenjen iz bit linije na liniju izvora spojenu s pristupnim prijemnikom i druga izmjenična struja omogućuje izmjenjivanje između drugog stanja i prvog stanja kada je prvi napon primijenjen iz linije izvora na bit liniju.
12. Uređaj sukladno zahtjevu 11, pri čemu je prva izmjenična struja niža od prvog praga povezanog s karakteristikama operativne struje pristupnog prijemnika, i pri čemu operativne karakteristike prijemnika obuhvaćaju struju iz odvodnog terminala pristupnog prijemnika na terminal izvora pristupnog prijemnika pod prethodno određenim naponom između ulaznog terminala pristupnog prijemnika i odvodnog terminala pristupnog prijemnika.
13. Uređaj sukladno zahtjevu 11, pri čemu je slobodni sloj smješten na prvoj udaljenosti od odvodnog terminala, i pri čemu vodeći put električno spaja odvodni terminal sa slobodnim slojem.
14. Uređaj sukladno zahtjevu 11 integriran u barem jedan poluvodički element.
15. Opipljivi medij za pohranu podataka koji je moguće računalno čitati i računalnom izvršiti, upute obuhvaćaju: upute koje može izvršiti računalo kako bi se provela metoda sukladno bilo kojem od zahtjeva 1 do 8.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/396,295 US8587993B2 (en) | 2009-03-02 | 2009-03-02 | Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM) |
| PCT/US2010/025834 WO2010101860A2 (en) | 2009-03-02 | 2010-03-02 | Reducing source loading effect in spin torque transfer magnetoresitive random access memory (stt-mram) |
| EP10709600.0A EP2404298B1 (en) | 2009-03-02 | 2010-03-02 | Reducing source loading effect in spin torque transfer magnetoresistive random access memory (stt-mram) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HRP20161195T1 true HRP20161195T1 (hr) | 2016-11-04 |
Family
ID=42216683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HRP20161195TT HRP20161195T1 (hr) | 2009-03-02 | 2016-09-19 | Smanjenje efekta opterećenja izvora kod spin prijenosa sile magnetnootporne memorije s nasumičnim pristupom (stt-mram) |
Country Status (10)
| Country | Link |
|---|---|
| US (4) | US8587993B2 (hr) |
| EP (1) | EP2404298B1 (hr) |
| JP (4) | JP5426694B2 (hr) |
| KR (1) | KR101293610B1 (hr) |
| CN (2) | CN104282327B (hr) |
| BR (1) | BRPI1009229A2 (hr) |
| HR (1) | HRP20161195T1 (hr) |
| SM (1) | SMT201600438B (hr) |
| TW (1) | TW201106353A (hr) |
| WO (1) | WO2010101860A2 (hr) |
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2009
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2010
- 2010-03-02 CN CN201410563657.9A patent/CN104282327B/zh not_active Expired - Fee Related
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- 2010-03-02 TW TW099106059A patent/TW201106353A/zh unknown
- 2010-03-02 CN CN201080009766.6A patent/CN102334166B/zh not_active Expired - Fee Related
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- 2010-03-02 BR BRPI1009229A patent/BRPI1009229A2/pt not_active IP Right Cessation
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| BRPI1009229A2 (pt) | 2016-03-15 |
| CN102334166A (zh) | 2012-01-25 |
| EP2404298B1 (en) | 2016-08-31 |
| JP6000908B2 (ja) | 2016-10-05 |
| WO2010101860A2 (en) | 2010-09-10 |
| KR101293610B1 (ko) | 2013-08-13 |
| SMT201600438B (it) | 2017-01-10 |
| US8913423B2 (en) | 2014-12-16 |
| JP2013214768A (ja) | 2013-10-17 |
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| US20100220516A1 (en) | 2010-09-02 |
| JP2013214766A (ja) | 2013-10-17 |
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| JP2013214767A (ja) | 2013-10-17 |
| US20140015077A1 (en) | 2014-01-16 |
| WO2010101860A3 (en) | 2010-11-11 |
| JP5426694B2 (ja) | 2014-02-26 |
| JP6214246B2 (ja) | 2017-10-18 |
| CN104282327B (zh) | 2017-06-23 |
| JP2012519348A (ja) | 2012-08-23 |
| US20150349244A1 (en) | 2015-12-03 |
| EP2404298A2 (en) | 2012-01-11 |
| CN104282327A (zh) | 2015-01-14 |
| TW201106353A (en) | 2011-02-16 |
| US9368715B2 (en) | 2016-06-14 |
| US20130161771A1 (en) | 2013-06-27 |
| US8587993B2 (en) | 2013-11-19 |
| CN102334166B (zh) | 2014-11-26 |
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