JP5676177B2 - 回転−トルク転送磁気リード・アクセス・メモリのための選択デバイス - Google Patents
回転−トルク転送磁気リード・アクセス・メモリのための選択デバイス Download PDFInfo
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- JP5676177B2 JP5676177B2 JP2010184990A JP2010184990A JP5676177B2 JP 5676177 B2 JP5676177 B2 JP 5676177B2 JP 2010184990 A JP2010184990 A JP 2010184990A JP 2010184990 A JP2010184990 A JP 2010184990A JP 5676177 B2 JP5676177 B2 JP 5676177B2
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 142
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000000295 complement effect Effects 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- 230000005294 ferromagnetic effect Effects 0.000 description 8
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910000616 Ferromanganese Inorganic materials 0.000 description 2
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
米国政府は、海軍と契約番号N00030-08-C-0010に従って、本発明の特定の権利を得た。
少なくとも2つのトランジスタを含む選択デバイスと第1の導電性ラインとの間に結合された磁気ビットを含む回転-トルク転送磁気リード・アクセス・メモリ(STT-MRAM)を、本願明細書において開示する。選択デバイスは、(a) 少なくとも2つのトランジスタが第1の状態にあるとき、回転-トルク転送(STT)書き込みオペレーションのために磁気ビットを選択し、(b)少なくとも2つのトランジスタが第2の状態にあるとき、読み込みオペレーションのための磁気ビットを選択するように作動する。選択デバイスはまた、(a)少なくとも2つのトランジスタが第1の状態にあるとき、所定のトランジスタを書き込みアーキテクチャに結合させ、(b)少なくとも2つのトランジスタが第2の状態にあるとき、所定のトランジスタを読み込みアーキテクチャに連結するように作動する。選択デバイスは、シリコン−オン−絶縁物(SOI)相補型金属酸化物半導体(CMOS)技術で実装されることができ、トランジスタはボディタイを含むことができる。選択デバイスはまた、放射線硬化されてもよい。
Claims (3)
- 第1の伝導体ラインと、
選択デバイスと、
第1の伝導体ラインと選択デバイスとの間に結合された磁気ビットと、
を有し、
前記選択デバイスが直列構成に配列された少なくとも第1のトランジスタ及び第2のトランジスタを包含し、
前記少なくとも第1のトランジスタ及び第2のトランジスタが第1の状態にあるとき、前記選択デバイスが、回転-トルク転送(STT)書き込みオペレーションのための磁気ビットを選択するように作用し、
前記第1の状態では、前記第1のトランジスタ及び第2のトランジスタが、完全に使用可能であり、
前記少なくとも第1のトランジスタ及び第2のトランジスタが第2の状態にあるとき、前記選択デバイスが、読み込みオペレーションのための磁気ビットを選択するように作用し、前記第2の状態において、前記第1のトランジスタが部分的に使用可能にされ、前記第2のトランジスタが完全に使用可能にされる、ことを特徴とする回転-トルク転送磁気ランダムアクセスメモリ(STT-MRAM)。 - 前記選択デバイスが更に、
(a)少なくとも第1のトランジスタ及び第2のトランジスタが第1の状態にあるとき、書き込みアーキテクチャに第2のトランジスタのソースを結合させ、
(b)少なくとも第1のトランジスタ及び第2のトランジスタが第2の状態にあるとき、読み込みアーキテクチャに第2のトランジスタのソースを結合させる
ように作用することを特徴とする請求項1に記載のSTT-MRAM。 - 前記直列構成が、第1の直列構成に配列され、
前記選択デバイスが、
第2の直列構成に配列された第3のトランジスタおよび第4のトランジスタと、
を有し、前記第1の直列構成および前記第2の直列構成が、並列構成に配置されることを特徴とする請求項1に記載のSTT-MRAM。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/610,158 US8411493B2 (en) | 2009-10-30 | 2009-10-30 | Selection device for a spin-torque transfer magnetic random access memory |
US12/610,158 | 2009-10-30 |
Publications (3)
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JP2011100530A JP2011100530A (ja) | 2011-05-19 |
JP2011100530A5 JP2011100530A5 (ja) | 2013-10-03 |
JP5676177B2 true JP5676177B2 (ja) | 2015-02-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010184990A Active JP5676177B2 (ja) | 2009-10-30 | 2010-08-20 | 回転−トルク転送磁気リード・アクセス・メモリのための選択デバイス |
Country Status (4)
Country | Link |
---|---|
US (1) | US8411493B2 (ja) |
EP (1) | EP2320425B1 (ja) |
JP (1) | JP5676177B2 (ja) |
AT (1) | ATE536618T1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11495636B2 (en) | 2019-09-18 | 2022-11-08 | Kioxia Corporation | Nonvolatile memory device having a resistance change memory element and switching element portions serially connected thereto |
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KR102011138B1 (ko) | 2013-04-25 | 2019-10-21 | 삼성전자주식회사 | 전류 생성기를 포함하는 불휘발성 메모리 장치 및 그것의 동작 전류 보정 방법 |
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US20160064452A1 (en) * | 2014-08-26 | 2016-03-03 | Kabushiki Kaisha Toshiba | Memory device |
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2009
- 2009-10-30 US US12/610,158 patent/US8411493B2/en active Active
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2010
- 2010-08-12 AT AT10172703T patent/ATE536618T1/de active
- 2010-08-12 EP EP10172703A patent/EP2320425B1/en active Active
- 2010-08-20 JP JP2010184990A patent/JP5676177B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11495636B2 (en) | 2019-09-18 | 2022-11-08 | Kioxia Corporation | Nonvolatile memory device having a resistance change memory element and switching element portions serially connected thereto |
Also Published As
Publication number | Publication date |
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JP2011100530A (ja) | 2011-05-19 |
US20120287708A1 (en) | 2012-11-15 |
EP2320425B1 (en) | 2011-12-07 |
US8411493B2 (en) | 2013-04-02 |
EP2320425A1 (en) | 2011-05-11 |
ATE536618T1 (de) | 2011-12-15 |
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