ATE536618T1 - Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer - Google Patents
Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transferInfo
- Publication number
- ATE536618T1 ATE536618T1 AT10172703T AT10172703T ATE536618T1 AT E536618 T1 ATE536618 T1 AT E536618T1 AT 10172703 T AT10172703 T AT 10172703T AT 10172703 T AT10172703 T AT 10172703T AT E536618 T1 ATE536618 T1 AT E536618T1
- Authority
- AT
- Austria
- Prior art keywords
- selection device
- transistors
- magnetorresistive
- memory
- spin
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/610,158 US8411493B2 (en) | 2009-10-30 | 2009-10-30 | Selection device for a spin-torque transfer magnetic random access memory |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE536618T1 true ATE536618T1 (de) | 2011-12-15 |
Family
ID=42697643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT10172703T ATE536618T1 (de) | 2009-10-30 | 2010-08-12 | Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer |
Country Status (4)
Country | Link |
---|---|
US (1) | US8411493B2 (de) |
EP (1) | EP2320425B1 (de) |
JP (1) | JP5676177B2 (de) |
AT (1) | ATE536618T1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130028010A1 (en) * | 2011-07-29 | 2013-01-31 | Qualcomm Incorporated | Fast MTJ Switching Write Circuit For MRAM Array |
WO2014119537A1 (ja) * | 2013-01-29 | 2014-08-07 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法 |
KR102011138B1 (ko) | 2013-04-25 | 2019-10-21 | 삼성전자주식회사 | 전류 생성기를 포함하는 불휘발성 메모리 장치 및 그것의 동작 전류 보정 방법 |
US20150070981A1 (en) * | 2013-09-06 | 2015-03-12 | Yoshinori Kumura | Magnetoresistance element and magnetoresistive memory |
US9087535B2 (en) * | 2013-10-31 | 2015-07-21 | Seagate Technology Llc | Spin transport sensor |
US9406368B2 (en) | 2014-01-21 | 2016-08-02 | International Business Machines Corporation | Dynamic temperature adjustments in spin transfer torque magnetoresistive random-access memory (STT-MRAM) |
US9418721B2 (en) | 2014-01-21 | 2016-08-16 | International Business Machines Corporation | Determining and storing bit error rate relationships in spin transfer torque magnetoresistive random-access memory (STT-MRAM) |
US20160064452A1 (en) * | 2014-08-26 | 2016-03-03 | Kabushiki Kaisha Toshiba | Memory device |
US9171560B1 (en) * | 2014-09-26 | 2015-10-27 | Western Digital Technologies, Inc. | Sloping transition on a ramp of a hard disk drive |
US9257970B1 (en) | 2014-12-19 | 2016-02-09 | Honeywell International Inc. | Magnetic latch |
JP2021048223A (ja) | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | 不揮発性記憶装置 |
US20230014296A1 (en) * | 2021-07-14 | 2023-01-19 | Honeywell International Inc. | Magnetic shielding for magnetic devices |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5024965A (en) * | 1990-02-16 | 1991-06-18 | Chang Chen Chi P | Manufacturing high speed low leakage radiation hardened CMOS/SOI devices |
JPH09148916A (ja) | 1995-11-24 | 1997-06-06 | Nec Corp | 半導体集積回路 |
US6483962B1 (en) | 2000-05-24 | 2002-11-19 | Vlad J. Novotny | Optical cross connect switching array system with optical feedback |
US6905614B1 (en) | 2000-05-24 | 2005-06-14 | Active Optical Networks, Inc. | Pattern-transfer process for forming micro-electro-mechanical structures |
US6812091B1 (en) | 2000-09-26 | 2004-11-02 | Infineon Technologies Ag | Trench capacitor memory cell |
GB0026205D0 (en) * | 2000-10-26 | 2000-12-13 | Koninkl Philips Electronics Nv | An image sensor |
US6545906B1 (en) | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US6633498B1 (en) | 2002-06-18 | 2003-10-14 | Motorola, Inc. | Magnetoresistive random access memory with reduced switching field |
ATE467264T1 (de) * | 2002-07-05 | 2010-05-15 | Dialog Semiconductor Gmbh | Spannungspuffer für grosse gate ladungen über den gesamten versorgungsspannungsbereich und vorzugsweiser nutzung in spannungsregler mit kleiner verlustspannung |
JP3824600B2 (ja) | 2003-07-30 | 2006-09-20 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
JP4192060B2 (ja) * | 2003-09-12 | 2008-12-03 | シャープ株式会社 | 不揮発性半導体記憶装置 |
US7148531B2 (en) | 2004-04-29 | 2006-12-12 | Nve Corporation | Magnetoresistive memory SOI cell |
TWI293213B (en) | 2004-10-05 | 2008-02-01 | Taiwan Semiconductor Mfg | Magnetoresistive structures, magnetoresistive devices, and memory cells |
US7230844B2 (en) | 2004-10-12 | 2007-06-12 | Nve Corporation | Thermomagnetically assisted spin-momentum-transfer switching memory |
US7272034B1 (en) * | 2005-08-31 | 2007-09-18 | Grandis, Inc. | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells |
US7430135B2 (en) | 2005-12-23 | 2008-09-30 | Grandis Inc. | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density |
KR100706806B1 (ko) | 2006-01-27 | 2007-04-12 | 삼성전자주식회사 | 자기 메모리 소자 및 그 제조 방법 |
US7515457B2 (en) | 2006-02-24 | 2009-04-07 | Grandis, Inc. | Current driven memory cells having enhanced current and enhanced current symmetry |
US20070246787A1 (en) | 2006-03-29 | 2007-10-25 | Lien-Chang Wang | On-plug magnetic tunnel junction devices based on spin torque transfer switching |
JP4157571B2 (ja) | 2006-05-24 | 2008-10-01 | 株式会社東芝 | スピン注入磁気ランダムアクセスメモリ |
US7379327B2 (en) | 2006-06-26 | 2008-05-27 | Grandis, Inc. | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins |
JP4987386B2 (ja) | 2006-08-16 | 2012-07-25 | 株式会社東芝 | 抵抗変化素子を有する半導体メモリ |
US7851840B2 (en) | 2006-09-13 | 2010-12-14 | Grandis Inc. | Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier |
JP2008123641A (ja) * | 2006-11-15 | 2008-05-29 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US7742329B2 (en) * | 2007-03-06 | 2010-06-22 | Qualcomm Incorporated | Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory |
US7692954B2 (en) | 2007-03-12 | 2010-04-06 | International Business Machines Corporation | Apparatus and method for integrating nonvolatile memory capability within SRAM devices |
US20080229269A1 (en) | 2007-03-12 | 2008-09-18 | International Business Machines Corporation | Design structure for integrating nonvolatile memory capability within sram devices |
US7888756B2 (en) | 2007-03-22 | 2011-02-15 | Everspin Technologies, Inc. | MRAM tunnel barrier structure and methods |
JP4435207B2 (ja) | 2007-06-13 | 2010-03-17 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US7742328B2 (en) | 2007-06-15 | 2010-06-22 | Grandis, Inc. | Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors |
JP4496242B2 (ja) | 2007-08-29 | 2010-07-07 | 株式会社東芝 | スピントランジスタ及び磁気メモリ |
US7881098B2 (en) * | 2008-08-26 | 2011-02-01 | Seagate Technology Llc | Memory with separate read and write paths |
JP4846817B2 (ja) * | 2009-03-23 | 2011-12-28 | 株式会社東芝 | 抵抗変化型メモリ |
US8400822B2 (en) * | 2010-03-22 | 2013-03-19 | Qualcomm Incorporated | Multi-port non-volatile memory that includes a resistive memory element |
-
2009
- 2009-10-30 US US12/610,158 patent/US8411493B2/en active Active
-
2010
- 2010-08-12 EP EP10172703A patent/EP2320425B1/de active Active
- 2010-08-12 AT AT10172703T patent/ATE536618T1/de active
- 2010-08-20 JP JP2010184990A patent/JP5676177B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP5676177B2 (ja) | 2015-02-25 |
US8411493B2 (en) | 2013-04-02 |
JP2011100530A (ja) | 2011-05-19 |
EP2320425A1 (de) | 2011-05-11 |
EP2320425B1 (de) | 2011-12-07 |
US20120287708A1 (en) | 2012-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE536618T1 (de) | Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer | |
TW200802365A (en) | Semiconductor device | |
WO2016144436A3 (en) | Multi-bit spin torque transfer magnetoresistive random access memory stt-mram using series magnetic tunnel junctions | |
MX2010006978A (es) | Dispositivo de mram con linea fuente compartida. | |
WO2007117392A3 (en) | On-plug magnetic tunnel junction devices based on spin torque transfer switching | |
WO2009031677A1 (ja) | 半導体装置 | |
ATE534997T1 (de) | Magnetoresistiver stt-ram und entwurfsverfahren | |
JP2011181905A5 (de) | ||
Kwon et al. | SHE-NVFF: Spin Hall effect-based nonvolatile flip-flop for power gating architecture | |
GB2529773A (en) | MTJ spin hall MRAM bit-cell and array | |
WO2009028298A1 (ja) | スピン注入磁化反転mtjを用いた不揮発性sram/ラッチ回路 | |
BRPI0808640A8 (pt) | controle de força de transistor de linha de palavra para leitura e escrita em memória de acesso aleatório magnetoresistiva de transferência de torque por meio do spin (stt-mram) | |
WO2010118181A3 (en) | Shared transistor in a spin-torque transfer magnetic random access memory (sttmram) cell | |
MX2010006977A (es) | Dispositivo de union magnetica en forma de tunel con vias de lectura y escritura separadas. | |
TW200741708A (en) | Structure and access method for magnetic memory cell structure and circuit of magnetic memory | |
MX2009010402A (es) | Logica programable de software usando dispositivos magnetoresistivos de torsion de transferencia de espin. | |
JP2012256398A5 (ja) | 半導体装置 | |
ATE540407T1 (de) | Magnetspeicher mit magnettunnelübergang | |
WO2006133342A3 (en) | Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein | |
TW200638422A (en) | Magnetic random access memory device | |
WO2010101860A3 (en) | Reducing source loading effect in spin torque transfer magnetoresitive random access memory (stt-mram) | |
JP2014026719A5 (de) | ||
TW201612905A (en) | Storage element, storage device, and signal processing circuit | |
EP2782100A3 (de) | Speicher zum Lesen und Schreiben von Daten bei einem magnetischen Tunnelübergangselement | |
BRPI1013772A2 (pt) | "junção de túnel magnético (mtj) e métodos, e memória de acesso aleatório magnética (mram) empregando os mesmos." |