JP6000908B2 - スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 - Google Patents
スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 Download PDFInfo
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- JP6000908B2 JP6000908B2 JP2013140491A JP2013140491A JP6000908B2 JP 6000908 B2 JP6000908 B2 JP 6000908B2 JP 2013140491 A JP2013140491 A JP 2013140491A JP 2013140491 A JP2013140491 A JP 2013140491A JP 6000908 B2 JP6000908 B2 JP 6000908B2
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- mtj
- memory cell
- memory
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Description
102 メモリアレイ
104 ビットライン
106 ビットライン論理回路
108 ワードライン
110 ワードライン論理回路
112 アンプ
Claims (3)
- 複数のメモリセルを備えたメモリデバイスを備えた装置を製造する方法であって、
前記複数のメモリセルのうち少なくとも一つのメモリセルが、磁気トンネル接合(MTJ)構造、及び前記MTJ構造に結合されたアクセストランジスタを備え、
前記MTJ構造の自由層の磁気モーメントが、第一の状態では前記MTJ構造のピンド層の磁気モーメントに対して実質的に平行であり、第二の状態では前記ピンド層の磁気モーメントに対して実質的に反平行であり、
1.1 < |JC(P→AP)|/JC(AP→P) < 2.0
との関係を満たし、
JC(P→AP)が、前記MTJ構造を前記第一の状態から前記第二の状態にスイッチさせる第一のスイッチング電流の大きさであり、
JC(AP→P)が、前記MTJ構造を前記第二の状態から前記第一の状態にスイッチさせる第二のスイッチング電流の大きさである、装置を、
前記ピンド層から前記自由層へ入射するオフセット磁場を変更することで、|J C(P→AP) |/J C(AP→P) を減少又は増大させることによって製造する方法。 - 前記装置が少なくとも一つの半導体ダイに集積される、請求項1に記載の方法。
- 前記装置が、前記メモリデバイスが集積されるセットトップボックス、ミュージックプレイヤ、ビデオプレイヤ、エンターテイメントユニット、ナビゲーションデバイス、通信デバイス、PDA、固定データユニット、及びコンピュータから成る群から選択されたデバイスを更に備える、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/396,295 | 2009-03-02 | ||
US12/396,295 US8587993B2 (en) | 2009-03-02 | 2009-03-02 | Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM) |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011553016A Division JP5426694B2 (ja) | 2009-03-02 | 2010-03-02 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013214767A JP2013214767A (ja) | 2013-10-17 |
JP6000908B2 true JP6000908B2 (ja) | 2016-10-05 |
Family
ID=42216683
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011553016A Expired - Fee Related JP5426694B2 (ja) | 2009-03-02 | 2010-03-02 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
JP2013140490A Active JP6214246B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
JP2013140491A Active JP6000908B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
JP2013140492A Active JP5752750B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011553016A Expired - Fee Related JP5426694B2 (ja) | 2009-03-02 | 2010-03-02 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
JP2013140490A Active JP6214246B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013140492A Active JP5752750B2 (ja) | 2009-03-02 | 2013-07-04 | スピントルク移動磁気抵抗ランダムアクセスメモリ(stt‐mram)のソースローディング効果の低減 |
Country Status (10)
Country | Link |
---|---|
US (4) | US8587993B2 (ja) |
EP (1) | EP2404298B1 (ja) |
JP (4) | JP5426694B2 (ja) |
KR (1) | KR101293610B1 (ja) |
CN (2) | CN104282327B (ja) |
BR (1) | BRPI1009229A2 (ja) |
HR (1) | HRP20161195T1 (ja) |
SM (1) | SMT201600438B (ja) |
TW (1) | TW201106353A (ja) |
WO (1) | WO2010101860A2 (ja) |
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2009
- 2009-03-02 US US12/396,295 patent/US8587993B2/en active Active
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2010
- 2010-03-02 TW TW099106059A patent/TW201106353A/zh unknown
- 2010-03-02 EP EP10709600.0A patent/EP2404298B1/en active Active
- 2010-03-02 KR KR1020117023282A patent/KR101293610B1/ko active IP Right Grant
- 2010-03-02 CN CN201410563657.9A patent/CN104282327B/zh not_active Expired - Fee Related
- 2010-03-02 BR BRPI1009229A patent/BRPI1009229A2/pt not_active IP Right Cessation
- 2010-03-02 CN CN201080009766.6A patent/CN102334166B/zh not_active Expired - Fee Related
- 2010-03-02 JP JP2011553016A patent/JP5426694B2/ja not_active Expired - Fee Related
- 2010-03-02 WO PCT/US2010/025834 patent/WO2010101860A2/en active Application Filing
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2013
- 2013-02-21 US US13/772,576 patent/US8913423B2/en active Active
- 2013-07-04 JP JP2013140490A patent/JP6214246B2/ja active Active
- 2013-07-04 JP JP2013140491A patent/JP6000908B2/ja active Active
- 2013-07-04 JP JP2013140492A patent/JP5752750B2/ja active Active
- 2013-09-16 US US14/027,503 patent/US9105340B2/en active Active
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2015
- 2015-08-10 US US14/822,295 patent/US9368715B2/en active Active
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2016
- 2016-09-19 HR HRP20161195TT patent/HRP20161195T1/hr unknown
- 2016-11-30 SM SM201600438T patent/SMT201600438B/it unknown
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US8587993B2 (en) | 2013-11-19 |
US20150349244A1 (en) | 2015-12-03 |
JP5426694B2 (ja) | 2014-02-26 |
JP5752750B2 (ja) | 2015-07-22 |
JP2013214766A (ja) | 2013-10-17 |
CN104282327A (zh) | 2015-01-14 |
JP2012519348A (ja) | 2012-08-23 |
SMT201600438B (it) | 2017-01-10 |
CN102334166B (zh) | 2014-11-26 |
JP2013214767A (ja) | 2013-10-17 |
EP2404298B1 (en) | 2016-08-31 |
US20140015077A1 (en) | 2014-01-16 |
KR101293610B1 (ko) | 2013-08-13 |
EP2404298A2 (en) | 2012-01-11 |
KR20110134447A (ko) | 2011-12-14 |
US20100220516A1 (en) | 2010-09-02 |
JP2013214768A (ja) | 2013-10-17 |
US20130161771A1 (en) | 2013-06-27 |
TW201106353A (en) | 2011-02-16 |
WO2010101860A3 (en) | 2010-11-11 |
BRPI1009229A2 (pt) | 2016-03-15 |
US8913423B2 (en) | 2014-12-16 |
WO2010101860A2 (en) | 2010-09-10 |
CN104282327B (zh) | 2017-06-23 |
US9368715B2 (en) | 2016-06-14 |
US9105340B2 (en) | 2015-08-11 |
JP6214246B2 (ja) | 2017-10-18 |
CN102334166A (zh) | 2012-01-25 |
HRP20161195T1 (hr) | 2016-11-04 |
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