JP2013084770A - ウェーハの研削方法 - Google Patents

ウェーハの研削方法 Download PDF

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Publication number
JP2013084770A
JP2013084770A JP2011223714A JP2011223714A JP2013084770A JP 2013084770 A JP2013084770 A JP 2013084770A JP 2011223714 A JP2011223714 A JP 2011223714A JP 2011223714 A JP2011223714 A JP 2011223714A JP 2013084770 A JP2013084770 A JP 2013084770A
Authority
JP
Japan
Prior art keywords
resin
wafer
cured
grinding
support substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011223714A
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English (en)
Japanese (ja)
Inventor
Akihito Kawai
章仁 川合
Yasutaka Mizomoto
康隆 溝本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2011223714A priority Critical patent/JP2013084770A/ja
Priority to TW101133141A priority patent/TWI549172B/zh
Priority to KR1020120112369A priority patent/KR20130039308A/ko
Priority to CN2012103820380A priority patent/CN103042449A/zh
Publication of JP2013084770A publication Critical patent/JP2013084770A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2011223714A 2011-10-11 2011-10-11 ウェーハの研削方法 Pending JP2013084770A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011223714A JP2013084770A (ja) 2011-10-11 2011-10-11 ウェーハの研削方法
TW101133141A TWI549172B (zh) 2011-10-11 2012-09-11 Wafer grinding method
KR1020120112369A KR20130039308A (ko) 2011-10-11 2012-10-10 웨이퍼의 연삭 방법
CN2012103820380A CN103042449A (zh) 2011-10-11 2012-10-10 晶片磨削方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011223714A JP2013084770A (ja) 2011-10-11 2011-10-11 ウェーハの研削方法

Publications (1)

Publication Number Publication Date
JP2013084770A true JP2013084770A (ja) 2013-05-09

Family

ID=48055433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011223714A Pending JP2013084770A (ja) 2011-10-11 2011-10-11 ウェーハの研削方法

Country Status (4)

Country Link
JP (1) JP2013084770A (zh)
KR (1) KR20130039308A (zh)
CN (1) CN103042449A (zh)
TW (1) TWI549172B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015233034A (ja) * 2014-06-09 2015-12-24 三菱電機株式会社 半導体装置の製造方法
JP2017157749A (ja) * 2016-03-03 2017-09-07 株式会社ディスコ ウェーハの加工方法
JP2018049973A (ja) * 2016-09-23 2018-03-29 株式会社岡本工作機械製作所 半導体装置の製造方法及び半導体製造装置
CN108807257A (zh) * 2017-04-27 2018-11-13 株式会社冈本工作机械制作所 静电吸附夹盘及其制造方法、以及半导体装置的制造方法
JP2019009372A (ja) * 2017-06-28 2019-01-17 株式会社ディスコ ウエーハの研削方法
WO2022045278A1 (ja) * 2020-08-27 2022-03-03 富士フイルム株式会社 加工された基材の製造方法、半導体素子の製造方法、及び、仮接着剤層形成用組成物

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6698337B2 (ja) * 2015-12-24 2020-05-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体ウェハの保持方法及び半導体デバイスの製造方法
JP7115932B2 (ja) * 2018-08-14 2022-08-09 株式会社ディスコ 被加工物の加工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203827A (ja) * 2000-12-28 2002-07-19 Lintec Corp 半導体ウエハの裏面研削方法
JP2007324370A (ja) * 2006-06-01 2007-12-13 Tokyo Ohka Kogyo Co Ltd 基板の薄板化方法、貼り合わせシステムおよび薄板化システム
JP2008182015A (ja) * 2007-01-24 2008-08-07 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2008235527A (ja) * 2007-03-20 2008-10-02 Fujitsu Ltd 部品内蔵基板の製造方法
JP2011159815A (ja) * 2010-02-01 2011-08-18 Sekisui Chem Co Ltd 接着剤層付き半導体チップの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3535318B2 (ja) * 1996-09-30 2004-06-07 富士通株式会社 半導体装置およびその製造方法
TW516116B (en) * 2002-01-16 2003-01-01 Taiwan Semiconductor Mfg Backside grinding method for bumped wafer
JP2006278610A (ja) * 2005-03-29 2006-10-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4688545B2 (ja) * 2005-03-31 2011-05-25 富士通セミコンダクター株式会社 多層配線基板
JP5517615B2 (ja) * 2007-06-22 2014-06-11 電気化学工業株式会社 半導体ウエハ研削方法とそれに用いる樹脂組成物及び保護シート
JP2011015815A (ja) * 2009-07-09 2011-01-27 Misawa Homes Co Ltd オープン型キッチン

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203827A (ja) * 2000-12-28 2002-07-19 Lintec Corp 半導体ウエハの裏面研削方法
JP2007324370A (ja) * 2006-06-01 2007-12-13 Tokyo Ohka Kogyo Co Ltd 基板の薄板化方法、貼り合わせシステムおよび薄板化システム
JP2008182015A (ja) * 2007-01-24 2008-08-07 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2008235527A (ja) * 2007-03-20 2008-10-02 Fujitsu Ltd 部品内蔵基板の製造方法
JP2011159815A (ja) * 2010-02-01 2011-08-18 Sekisui Chem Co Ltd 接着剤層付き半導体チップの製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015233034A (ja) * 2014-06-09 2015-12-24 三菱電機株式会社 半導体装置の製造方法
JP2017157749A (ja) * 2016-03-03 2017-09-07 株式会社ディスコ ウェーハの加工方法
JP2018049973A (ja) * 2016-09-23 2018-03-29 株式会社岡本工作機械製作所 半導体装置の製造方法及び半導体製造装置
CN108807257A (zh) * 2017-04-27 2018-11-13 株式会社冈本工作机械制作所 静电吸附夹盘及其制造方法、以及半导体装置的制造方法
CN108807257B (zh) * 2017-04-27 2022-10-28 株式会社冈本工作机械制作所 静电吸附夹盘及其制造方法、以及半导体装置的制造方法
JP2019009372A (ja) * 2017-06-28 2019-01-17 株式会社ディスコ ウエーハの研削方法
WO2022045278A1 (ja) * 2020-08-27 2022-03-03 富士フイルム株式会社 加工された基材の製造方法、半導体素子の製造方法、及び、仮接着剤層形成用組成物

Also Published As

Publication number Publication date
TW201320175A (zh) 2013-05-16
TWI549172B (zh) 2016-09-11
CN103042449A (zh) 2013-04-17
KR20130039308A (ko) 2013-04-19

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