JP2013021628A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2013021628A JP2013021628A JP2011155409A JP2011155409A JP2013021628A JP 2013021628 A JP2013021628 A JP 2013021628A JP 2011155409 A JP2011155409 A JP 2011155409A JP 2011155409 A JP2011155409 A JP 2011155409A JP 2013021628 A JP2013021628 A JP 2013021628A
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- Waveguide Aerials (AREA)
Abstract
【解決手段】半導体装置(半導体モジュール)10aは、回路基板(モジュール基板)11、及び回路基板11に実装された半導体素子12を含む。半導体素子12の上面には電磁波をシールドするシールド層13が配設され、シールド層13の上方にアンテナ素子14が配設される。半導体素子12とアンテナ素子14とは、接続部15によって電気的に接続される。これにより、電磁波のシールド機能とアンテナ機能を兼ね備えた小型の半導体装置10aが実現される。
【選択図】図1
Description
図1に示す半導体装置(半導体モジュール)10aは、回路基板(モジュール基板)11、半導体素子12、シールド層13、アンテナ素子14、及び接続部15を有している。
図2に示す半導体装置(半導体モジュール)10bは、上面にシールド層13が設けられた半導体素子12が実装されているモジュール基板11と、シールド層13の上に設けられたアンテナ素子14とが、接続部15によって電気的に接続された構造を有している。モジュール基板11とアンテナ素子14の間の半導体素子12及び接続部15は、封止樹脂16によって封止されている。
まず、第1の実施の形態について説明する。
図3は第1の実施の形態に係る半導体モジュールの一例を示す図である。図3には、第1の実施の形態に係る半導体モジュールの断面を模式的に図示している。
第1アンテナ層141は、シールド層130上に設けられ、第1アンテナ層141上に、誘電体層143を介して第2アンテナ層142が設けられている。第1アンテナ層141及び第2アンテナ層142は、Cu又はCu主体の金属材料を用いて形成される。第1アンテナ層141と第2アンテナ層142は、誘電体層143を貫通する、Cuや半田等を用いた導通部144によって電気的に接続されている。
上記半導体モジュール100aにおけるアンテナ素子140の第2アンテナ層142には、前述のように、所定の導波パターンが形成される。
図4(A),(B)に示すアンテナ層400は、一対の長方形のスロット401a(開口部(貫通孔))を互いの長軸方向が交差するような向きで配置したスロットペア401を用いて、導波パターンが形成されている。図4(A)には、複数のスロットペア401が並設された、いわゆるマルチスロットペアアンテナの導波パターンを示している。図4(B)には、複数のスロットペア401が渦巻き状(点線で図示)に並設された、いわゆるラジアルラインスロットペアアンテナを示している。
図5(A)には、第1アンテナ層141にプレーン状の導波パターンが形成され、第2アンテナ層142にスロット401a(スロットペア401)を含む導波パターンが形成されたアンテナ素子140を例示している。第1アンテナ層141及び第2アンテナ層142は、各スロットペア401の位置に設けられた導通部144で電気的に接続されている。中央部に位置する導通部144a(144)は、接続部150に電気的に接続されている。
また、接続部150と第1アンテナ層141の間には、それらを絶縁する構成、例えば、絶縁性の膜を設けたり、第1アンテナ層141のエッジを接続部150の側面から離間させたりする構成を採用してもよい。
半導体モジュール100aでは、モジュール基板110に実装した半導体素子120の上に、シールド層130、アンテナ素子140を設けることにより、モジュールサイズを小型化することが可能になる。
まず、図6(A)に示すような半導体素子120を準備する。尚、図6(A)には1つの半導体素子120のみを図示しているが、この準備段階では、個々の半導体素子120に個片化するダイシング前の、ウェハ状態のものを用いることができる。
尚、ここではシールド層130として、磁性体粒子を樹脂中に分散させたシートを用いる場合を例にして、半導体モジュール100aの形成方法を説明した。このほか、シールド層130の全部又は一部(表層部)に金属層を用いた場合(シールド層130をアンテナ素子の一部として機能させる場合)にも、これと同様の流れでモジュール形成を行うことが可能である。即ち、上記図6(B)の工程では、半導体素子120の上面に、金属層又は金属層を含むシールド層130をめっき法や蒸着法等で形成する。図6(C)の工程では、レーザ照射により、そのシールド層130を貫通し半導体素子120の内部に達する開口部151の形成を行う。その後、O2プラズマガスを用いたアッシングを実施して開口部151内面(半導体素子120の半導体基板、シールド層130)の絶縁性を確保し、接続部150を充填形成する。以降の工程は、上記同様に行うことが可能である。
図10及び図11は第2の実施の形態に係る半導体モジュールの一例を示す図である。図10には、第2の実施の形態に係る半導体モジュールの一例の断面を模式的に図示している。図11には、第2の実施の形態に係る半導体モジュールの一例の上面から見た外観を模式的に図示している。尚、図10は図11のL1−L1断面に相当する断面模式図である。
まず、図12(A)に示すような半導体素子120(ウェハ状態)を準備する。次いで、図12(B)に示すように、半導体素子120の上面(半導体基板面)にシールド層130を形成する。シールド層130には、磁性体粒子を樹脂中に分散させたシートのほか、全部又は一部が磁性体層や金属層であるもの等を用いることができる。そして、図12(C)に示すように、半導体素子120の下面(配線層等が形成された回路面)に設けた電極パッド121上にバンプ122を形成する。尚、バンプ122の形成は、ウェハ状態の半導体素子120に行うことができ、また、ダイシングで個片化した後の個々の半導体素子120に行うこともできる。ウェハ状態でバンプ122を形成した場合は、その後、ダイシングで個々の半導体素子120に個片化される。
上記のような構成を有する半導体モジュール100bによれば、マザー基板300上の少ないスペースに、シールド機能とアンテナ機能を組み込むことができる。ここで比較のため、別形態の半導体モジュールについて、図17を参照して説明する。
第2の実施の形態で述べたような構成及び形成方法によれば、比較的簡便に形成可能で、所望の特性及び信頼性を有する、小型の半導体モジュール100bを実現することができる。
図18及び図19は第3の実施の形態に係る半導体モジュールの一例を示す図である。図18には、第3の実施の形態に係る半導体モジュールの一例の断面を模式的に図示している。図19には、第3の実施の形態に係る半導体モジュールの一例の上面から見た外観を模式的に図示している。尚、図18は図19のL2−L2断面に相当する断面模式図である。
図20及び図21は第4の実施の形態に係る半導体モジュールの一例を示す図である。図20には、第4の実施の形態に係る半導体モジュールの一例の断面を模式的に図示している。図21には、第4の実施の形態に係る半導体モジュールの一例の上面から見た外観を模式的に図示している。尚、図20は図21(B)のL3−L3断面に相当する断面模式図である。
(付記1) 回路基板と、
前記回路基板に実装された半導体素子と、
前記半導体素子の上面に配設されたシールド層と、
前記シールド層の上方に配設されたアンテナ素子と、
前記半導体素子と前記アンテナ素子とを電気的に接続する、前記シールド層を貫通した接続部と、
を含むことを特徴とする半導体装置。
(付記3) 前記接続部は、柱状であって、前記シールド層を貫通して前記半導体素子に電気的に接続され、当該接続部に前記アンテナ素子が電気的に接続されることを特徴とする付記1に記載の半導体装置。
前記アンテナ素子は、前記封止樹脂上に配設され、
前記接続部は、柱状であって、前記封止樹脂を貫通して前記回路基板に電気的に接続され、当該接続部に前記アンテナ素子が電気的に接続されることを特徴とする付記1に記載の半導体装置。
前記シールド層の上方に配設された第1アンテナ層と、
前記第1アンテナ層の上方に配設された第2アンテナ層と、
前記第1アンテナ層と前記第2アンテナ層の間に配設された誘電体層と、
を含むことを特徴とする付記1乃至4のいずれかに記載の半導体装置。
前記シールド層の上方に配設されたアンテナ層と、
前記シールド層と前記アンテナ層の間に配設された誘電体層と、
を含むことを特徴とする付記1乃至3のいずれかに記載の半導体装置。
(付記8) 前記シールド層は、磁性体粒子を含有する樹脂層を含むことを特徴とする付記1乃至7のいずれかに記載の半導体装置。
(付記10) 前記シールド層は、金属材料からなる金属層を含むことを特徴とする付記1乃至7のいずれかに記載の半導体装置。
前記シールド層を貫通して前記半導体素子に電気的に接続される柱状の接続部を配設する工程と、
前記シールド層の上方に、前記接続部に電気的に接続されるアンテナ素子を配設する工程と、
前記アンテナ素子の配設後、前記半導体素子を回路基板に実装する工程と、
を含むことを特徴とする半導体装置の製造方法。
(付記12) 前記柱状の接続部は、前記半導体素子を貫通するTSVであることを特徴とする付記11に記載の半導体装置の製造方法。
前記シールド層の配設後、前記半導体素子を回路基板に実装する工程と、
前記回路基板上に柱状の接続部を電気的に接続する工程と、
前記半導体素子及び前記接続部を封止樹脂で封止する工程と、
前記封止樹脂の上方に、前記接続部に電気的に接続されるアンテナ素子を配設する工程と、
を含むことを特徴とする半導体装置の製造方法。
11,110,1110 モジュール基板(回路基板)
11a,12b,111,112,121,301 電極パッド
11b,113,113d 接合部
12,120,1120 半導体素子
12a,101,122 バンプ
13,130 シールド層
14,140 アンテナ素子
15,150,150c 接続部
16,160 封止樹脂
124 半導体基板
131 磁性体粒子
132 樹脂
133 炭化層
141 第1アンテナ層
142 第2アンテナ層
143 誘電体層
144,144a 導通部
145 中空部
151 開口部
170 アンダーフィル樹脂
180,1180 電子素子
300 マザー基板
400 アンテナ層
401 スロットペア
401a スロット
500 レジストマスク
1000 電子装置(半導体装置)
1190 金属ケース
1200 アンテナ部品
Claims (6)
- 回路基板と、
前記回路基板に実装された半導体素子と、
前記半導体素子の上面に配設されたシールド層と、
前記シールド層の上方に配設されたアンテナ素子と、
前記半導体素子と前記アンテナ素子とを電気的に接続する、前記シールド層を貫通した接続部と、
を含むことを特徴とする半導体装置。 - 前記接続部は、TSVであることを特徴とする請求項1に記載の半導体装置。
- 前記アンテナ素子は、
前記シールド層の上方に配設された第1アンテナ層と、
前記第1アンテナ層の上方に配設された第2アンテナ層と、
前記第1アンテナ層と前記第2アンテナ層の間に配設された誘電体層と、
を含むことを特徴とする請求項1又は2に記載の半導体装置。 - 前記アンテナ素子は、
前記シールド層の上方に配設されたアンテナ層と、
前記シールド層と前記アンテナ層の間に配設された誘電体層と、
を含むことを特徴とする請求項1又は2に記載の半導体装置。 - 半導体素子の上面にシールド層を配設する工程と、
前記シールド層を貫通して前記半導体素子に電気的に接続される柱状の接続部を配設する工程と、
前記シールド層の上方に、前記接続部に電気的に接続されるアンテナ素子を配設する工程と、
前記アンテナ素子の配設後、前記半導体素子を回路基板に実装する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記柱状の接続部は、前記半導体素子を貫通するTSVであることを特徴とする請求項5に記載の半導体装置の製造方法。
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JP2017076656A (ja) * | 2015-10-13 | 2017-04-20 | リンテック株式会社 | 半導体装置および複合シート |
JP2017118476A (ja) * | 2015-12-21 | 2017-06-29 | ホシデン株式会社 | 非接触通信モジュール |
WO2017110273A1 (ja) * | 2015-12-21 | 2017-06-29 | ホシデン株式会社 | 非接触通信モジュール |
TWI700807B (zh) * | 2015-12-21 | 2020-08-01 | 日商星電股份有限公司 | 非接觸通訊模組 |
US11756902B2 (en) | 2017-04-03 | 2023-09-12 | Murata Manufacturing Co., Ltd. | High-frequency module |
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US20130015564A1 (en) | 2013-01-17 |
JP5729186B2 (ja) | 2015-06-03 |
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CN102881680A (zh) | 2013-01-16 |
US8994153B2 (en) | 2015-03-31 |
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