JP2012522264A - 有機物質を除去するための組成物及び方法 - Google Patents
有機物質を除去するための組成物及び方法 Download PDFInfo
- Publication number
- JP2012522264A JP2012522264A JP2012501991A JP2012501991A JP2012522264A JP 2012522264 A JP2012522264 A JP 2012522264A JP 2012501991 A JP2012501991 A JP 2012501991A JP 2012501991 A JP2012501991 A JP 2012501991A JP 2012522264 A JP2012522264 A JP 2012522264A
- Authority
- JP
- Japan
- Prior art keywords
- diethylene glycol
- weight
- solvent
- composition
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 85
- 239000005416 organic matter Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 70
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000002904 solvent Substances 0.000 claims description 59
- 229920000642 polymer Polymers 0.000 claims description 52
- 238000004140 cleaning Methods 0.000 claims description 47
- 229920005989 resin Polymers 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 34
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 31
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 27
- 239000000654 additive Substances 0.000 claims description 23
- 239000003795 chemical substances by application Substances 0.000 claims description 21
- 229920000728 polyester Polymers 0.000 claims description 21
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 18
- 230000000996 additive effect Effects 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 12
- 238000004090 dissolution Methods 0.000 claims description 11
- -1 alkylbenzene sulfonate Chemical class 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 8
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 7
- 150000001412 amines Chemical class 0.000 claims description 7
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 6
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 6
- 150000007513 acids Chemical class 0.000 claims description 6
- 239000000908 ammonium hydroxide Substances 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 5
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 5
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 claims description 4
- 229930185605 Bisphenol Natural products 0.000 claims description 4
- 150000004703 alkoxides Chemical class 0.000 claims description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 4
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000001913 cellulose Chemical class 0.000 claims description 3
- 229920002678 cellulose Chemical class 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 3
- OELQSSWXRGADDE-UHFFFAOYSA-N 2-methylprop-2-eneperoxoic acid Chemical compound CC(=C)C(=O)OO OELQSSWXRGADDE-UHFFFAOYSA-N 0.000 claims description 2
- PYSRRFNXTXNWCD-UHFFFAOYSA-N 3-(2-phenylethenyl)furan-2,5-dione Chemical compound O=C1OC(=O)C(C=CC=2C=CC=CC=2)=C1 PYSRRFNXTXNWCD-UHFFFAOYSA-N 0.000 claims description 2
- 229920000623 Cellulose acetate phthalate Chemical class 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 229920002873 Polyethylenimine Polymers 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 2
- 229920002472 Starch Polymers 0.000 claims description 2
- 229920000147 Styrene maleic anhydride Polymers 0.000 claims description 2
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 125000004848 alkoxyethyl group Chemical class 0.000 claims description 2
- QHZOMAXECYYXGP-UHFFFAOYSA-N ethene;prop-2-enoic acid Chemical compound C=C.OC(=O)C=C QHZOMAXECYYXGP-UHFFFAOYSA-N 0.000 claims description 2
- 229920006226 ethylene-acrylic acid Polymers 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 235000019698 starch Nutrition 0.000 claims description 2
- 239000008107 starch Substances 0.000 claims description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 125000003158 alcohol group Chemical group 0.000 claims 1
- 229940081734 cellulose acetate phthalate Drugs 0.000 claims 1
- 229920005606 polypropylene copolymer Polymers 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 52
- 235000012431 wafers Nutrition 0.000 abstract description 24
- 238000000576 coating method Methods 0.000 abstract description 17
- 239000011368 organic material Substances 0.000 abstract description 17
- 239000011248 coating agent Substances 0.000 abstract description 15
- 238000004377 microelectronic Methods 0.000 abstract description 8
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 5
- 239000004634 thermosetting polymer Substances 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 45
- 239000000126 substance Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 29
- 239000000243 solution Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 229920003986 novolac Polymers 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000007787 solid Substances 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 8
- 239000003513 alkali Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 6
- 150000002148 esters Chemical group 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000011550 stock solution Substances 0.000 description 5
- 125000000542 sulfonic acid group Chemical group 0.000 description 5
- 229920003169 water-soluble polymer Polymers 0.000 description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 238000013019 agitation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229920006397 acrylic thermoplastic Polymers 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000013626 chemical specie Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002009 diols Chemical class 0.000 description 3
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229920003049 isoprene rubber Polymers 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920001634 Copolyester Polymers 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 239000003849 aromatic solvent Substances 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000004945 emulsification Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 150000002334 glycols Chemical class 0.000 description 2
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 2
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- PXGZQGDTEZPERC-UHFFFAOYSA-N 1,4-cyclohexanedicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)CC1 PXGZQGDTEZPERC-UHFFFAOYSA-N 0.000 description 1
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- VSSAADCISISCOY-UHFFFAOYSA-N 1-(4-furo[3,4-c]pyridin-1-ylphenyl)furo[3,4-c]pyridine Chemical compound C1=CN=CC2=COC(C=3C=CC(=CC=3)C3=C4C=CN=CC4=CO3)=C21 VSSAADCISISCOY-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- 125000001462 1-pyrrolyl group Chemical group [*]N1C([H])=C([H])C([H])=C1[H] 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- QOFLTGDAZLWRMJ-UHFFFAOYSA-N 2-methylpropane-1,1-diol Chemical compound CC(C)C(O)O QOFLTGDAZLWRMJ-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical class N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OFHLHPIUVGQCNM-UHFFFAOYSA-N CC(C)(C)[K].O Chemical compound CC(C)(C)[K].O OFHLHPIUVGQCNM-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- UGQMRVRMYYASKQ-KQYNXXCUSA-N Inosine Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(O)=C2N=C1 UGQMRVRMYYASKQ-KQYNXXCUSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- 125000005360 alkyl sulfoxide group Chemical group 0.000 description 1
- 229920006125 amorphous polymer Polymers 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 235000015241 bacon Nutrition 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000000711 cancerogenic effect Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 231100000357 carcinogen Toxicity 0.000 description 1
- 239000003183 carcinogenic agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000001142 dicarboxylic acid group Chemical group 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- GFUIDHWFLMPAGY-UHFFFAOYSA-N ethyl 2-hydroxy-2-methylpropanoate Chemical compound CCOC(=O)C(C)(C)O GFUIDHWFLMPAGY-UHFFFAOYSA-N 0.000 description 1
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 1
- IZRVEUZYBVGCFC-UHFFFAOYSA-N ethyl 2-hydroxyisovalerate Chemical compound CCOC(=O)C(O)C(C)C IZRVEUZYBVGCFC-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229940015043 glyoxal Drugs 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 239000002920 hazardous waste Substances 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- OJURWUUOVGOHJZ-UHFFFAOYSA-N methyl 2-[(2-acetyloxyphenyl)methyl-[2-[(2-acetyloxyphenyl)methyl-(2-methoxy-2-oxoethyl)amino]ethyl]amino]acetate Chemical compound C=1C=CC=C(OC(C)=O)C=1CN(CC(=O)OC)CCN(CC(=O)OC)CC1=CC=CC=C1OC(C)=O OJURWUUOVGOHJZ-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 229940017219 methyl propionate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JIKUXBYRTXDNIY-UHFFFAOYSA-N n-methyl-n-phenylformamide Chemical compound O=CN(C)C1=CC=CC=C1 JIKUXBYRTXDNIY-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 150000003014 phosphoric acid esters Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920006149 polyester-amide block copolymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229940048842 sodium xylenesulfonate Drugs 0.000 description 1
- QUCDWLYKDRVKMI-UHFFFAOYSA-M sodium;3,4-dimethylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1C QUCDWLYKDRVKMI-UHFFFAOYSA-M 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- MWOOGOJBHIARFG-UHFFFAOYSA-N vanillin Chemical compound COC1=CC(C=O)=CC=C1O MWOOGOJBHIARFG-UHFFFAOYSA-N 0.000 description 1
- FGQOOHJZONJGDT-UHFFFAOYSA-N vanillin Natural products COC1=CC(O)=CC(C=O)=C1 FGQOOHJZONJGDT-UHFFFAOYSA-N 0.000 description 1
- 235000012141 vanillin Nutrition 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C11D2111/22—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Abstract
Description
(i) 少なくとも1種のジカルボン酸のモノマー残基;
(ii) すべての、酸及びヒドロキシル同等物の合計を基準として約4〜25モルパーセントの、芳香環に結合された少なくとも1つの金属スルホン酸基を含有する少なくとも1種の二官能性スルホモノマーのモノマー残基(官能基はヒドロキシ又はカルボキシル又はアミノであり、そしてスルホン酸基の金属はNa、Li、K、Mg、Ca、Cu、Ni、Fe、及びこれらの混合物である);及び必要に応じて
(iii) 式−(OCH2CH2)n−(nは2〜約500であり、但しこのような残基のモルパーセントは、nの値に対して反比例することを条件とする)を有する少なくとも1種のポリ(アルキレングリコール)のモノマー残基;及び
(iv) 最大約75モルパーセントの、少なくとも1種のジオールのモノマー残基(前記ジオールはポリ(アルキレングリコール)以外のものである)
から成る。
すべての例において、予め形成された原液を添加することにより、スルホポリエステルを導入した。これらの原液は、親水性溶剤(成分A)と、水溶性、水分散性、又は水散逸性のポリマー(成分B)とから成った。選択されたポリマーは、線状及び分枝状類双方の、ガラス転移温度及び粘度が異なる種々のスルホポリエステルであった。このようなポリマーは、当業者によく知られており、Eastman AQポリマーの商品名でEastman Chemical Companyから入手可能である。具体的には、このようなスルホポリエステルは、好ましくは約80℃未満の温度で水性分散体中に溶解、分散、又は散逸させることができる。このようなポリエステルは、米国特許第3,734,874号明細書により詳細に記載されている。この開示内容は参照することにより本明細書中に組み込まれる。本発明の候補として考えられるポリエステルの一例としては、Eastman AQ 38S Polymer, Eastman AQ 48 Ultra Polymer, Eastman AQ 55S Polymer, EastONE S85030 Copolyester, Eastman ES-100 Water-Dispersible Polymer, Eastman AQ 1350 Copolymer, 及びEastman AQ 2350 Copolymerが挙げられる。選択された溶剤は、エチレングリコール、ジエチレングリコール、トリエチレングリコール、プロピレングリコール、ジエチレングリコールメチルエーテル(Eastman DM Solvent)、ジエチレングリコールエチルエーテル(Eastman DE Solvent)、ジエチレングリコールプロピルエーテル(Eastman DP Solvent)、ジエチレングリコールブチルエーテル(Eastman DB Solvent)、エチレングリコールプロピルエーテル(Eastman EP Solvent)、及びエチレングリコールブチルエーテル(Eastman EB Solvent)であった。スクリーニング研究において、10、20、及び30wt%固形分のポリマー・溶剤対のそれぞれに対して溶液を試みた。加えて、それぞれ40wt%固形分のEastman AQ 38S Polymer、及びEastman AQ 48 Ultra Polymerの溶液を、4種のジエチレングリコールエーテル溶剤中で試みた。攪拌機、凝縮器、及び窒素源が接続された丸底フラスコに溶剤を添加することによって、これらの原液を調製した。次いで適量の固形スルホポリエステルを添加し、そして溶液が得られるまで、混合物を攪拌しながら加熱した。ポリマー・溶剤対、及び固形物ローディング量に応じて、30分間90℃〜70分間180℃の範囲で、種々様々な時間にわたって異なる温度で溶液を加熱した。下記表2はこれらの原液をまとめている。「好適な溶液」とは、調製条件下で容易に溶解されたポリエステルが、冷却した場合に可溶性のままであったものであり、この溶液は塗膜を形成するのに適している。「悪い溶液」とは、固形分が調製条件下で溶剤中に不溶性であるか、又は形成された溶液が短時間で不安定になるものである。「不適格溶液」とは、同じポリマーと溶剤との対の溶液が、より低い固形物ローディング量で悪い溶液を予め形成したものである。「疑わしい溶液」とは、形成された溶液が極度に高粘度であるか、又は潜在的な長期不安定性の兆候を示すが、しかしさらに研究すれば価値があるかもしれないものである。
表4は、表1に記載されているように塗布されたPHost樹脂に対して行われたクリーニング研究からの結果を含む。15分間にわたって200℃で樹脂を硬化した。すべてのクリーニング組成物は6wt%のスルホポリエステルと、24wt%のDE溶剤とから成り、残りの70wt%は、表6に示された2種の添加剤から成った。クリーニング段階のためのプロセス温度は100℃、150℃、及び200℃であった。
表5は、表1に記載されているように塗布されたノボラック樹脂に対して行われたクリーニング研究からの結果を含む。15分間にわたって200℃で樹脂を硬化させた。すべてのクリーニング組成物は6wt%のスルホポリエステルと、24wt%のDE溶剤とから成り、残りの70wt%は、表7に示された2種の添加剤から成った。クリーニング段階のためのプロセス温度は100℃、150℃、及び200℃であった。
表6は、表1に記載されているように塗布されたアクリル樹脂に対して行われたクリーニング研究からの結果を含む。15分間にわたって150℃で樹脂を硬化した。すべてのクリーニング組成物は6wt%のスルホポリエステルと、24wt%のDE溶剤とから成り、残りの70wt%は、表8に示された2種の添加剤から成った。クリーニング段階のためのプロセス温度は100℃、150℃、及び200℃であった。結果を下記表に示す。
表7は、表1に記載されているように塗布されたポリイミド樹脂に対して行われたクリーニング研究からの結果を含む。軟質ベーキング後、ウエハーを15分間にわたって200℃で硬化し、続いてさらに30分間にわたって350℃で硬化した。すべてのクリーニング組成物は6wt%のスルホポリエステルと、24wt%のDE溶剤とから成り、残りの70wt%は、表9に示された3種の添加剤から成った。クリーニング段階のためのプロセス温度は100℃、150℃、及び200℃であった。結果を下記表に示す。
表8は、表1に記載されているように塗布されたイソプレン樹脂に対して行われたクリーニング研究からの結果を含む。ウエハーを15分間にわたって150℃で硬化した。すべてのクリーニング組成物は6wt%のスルホポリエステルと、24wt%のDE溶剤とから成り、68wt%は、表7に示された2種の添加剤から成り、そして2wt%は界面活性剤、例えばZelec(登録商標)UN (アルコキシホスフェートエステル界面活性剤)から成る。クリーニング段階のためのプロセス温度は100℃、150℃、及び200℃であった。
Claims (15)
- 溶剤又は溶剤の混合物と、
10.0%を上回る重量%の少なくとも1種のスルホン化ポリエステルと
を含み、
該溶剤が、エチレングリコール、ジエチレングリコール、プロピレングリコール、ジエチレングリコールエチルエーテル、ジエチレングリコールメチルエーテル、ジエチレングリコールブチルエーテル、ジエチレングリコールプロピルエーテル、エチレングリコールプロピルエーテル、エチレングリコールブチルエーテル、及びこれらの混合物から成る群から選択される、
無機基板から有機樹脂をクリーニングするための組成物。 - 該溶剤が約40%〜約97%の重量%で存在する、請求項1に記載の組成物。
- 約0.5%〜約99.0の重量%の有機溶剤又は溶剤の混合物と、
約0.5%〜約99.0の重量%の少なくとも1種のスルホン化ポリエステルと、
約0.01%〜約99.0の重量%の、クリーニング性能を増強する少なくとも1種の添加剤と
を含み、
該溶剤が、エチレングリコール、ジエチレングリコール、プロピレングリコール、ジエチレングリコールエチルエーテル、ジエチレングリコールメチルエーテル、ジエチレングリコールブチルエーテル、ジエチレングリコールプロピルエーテル、エチレングリコールプロピルエーテル、エチレングリコールブチルエーテル、及びこれらの混合物から成る群から選択される、
無機基板から有機樹脂を除去するための組成物。 - 該溶剤が約30%〜約95%の重量%で存在し、該ポリマーが約3%〜約60%の重量%で存在し、そして該添加剤が約2%〜約60%の重量%で存在する、請求項3に記載の組成物。
- 該添加剤が、水酸化アンモニウム、水酸化第四アンモニウム、アミン、アルカノールアミン、元素水酸化物、元素アルコキシド、メタンスルホン酸、p−トルエンスルホン酸、ドデシルベンゼンスルホン酸、蟻酸、硫酸、硝酸、リン酸、又はこれらの混合物から成る群から選択される、請求項3に記載の組成物。
- (a) i 約0.5%〜約99.0の重量%の有機溶剤又は有機溶剤の混合物と、
ii 約0.5%〜約99.0の重量%の少なくとも1種の水溶性、水分散性、又は水散逸性のポリマーと
を含む組成物で前記有機樹脂を塗布する工程、
(b) 該有機樹脂の溶解を達成するのに十分な温度まで、そして十分な時間にわたって該基板を加熱する工程、そして
(c) 該組成物及び該有機樹脂を除去するのに十分な容量のリンス剤で、該基板を濯ぐ工程
を含む、無機基板から有機樹脂を除去する方法。 - 該組成物がさらに、約0.01%〜約99.0の重量%の、クリーニング性能を増強する少なくとも1種の添加剤を含む、請求項6に記載の方法。
- 該溶剤が約30%〜約95%の重量%で存在し、該ポリマーが約3%〜約60%の重量%で存在し、そして該添加剤が約2%〜約60%の重量%で存在する、請求項6に記載の方法。
- 該溶剤が、エチレングリコール、ジエチレングリコール、プロピレングリコール、ジエチレングリコールエチルエーテル、ジエチレングリコールメチルエーテル、ジエチレングリコールブチルエーテル、ジエチレングリコールプロピルエーテル、エチレングリコールプロピルエーテル、エチレングリコールブチルエーテル、及びこれらの混合物から成る群から選択される、請求項6に記載の方法。
- 該ポリマーが、アルコールエトキシレート、ビスフェノールエトキシレート、ビスフェノールプロポキシレート、アルキルベンゼンスルホン酸塩、セルロースアセテートフタレート、アルコキシエチルのセルロース誘導体、ヒドロキシプロピルのセルロース誘導体、エチレンのコポリマー、プロピレンオキシドのコポリマー、樹枝状ポリエステル、エトキシル化アミン、エトキシル化アルコール塩、エチレンアクリル酸、ヒドロキシ−メタクリレート、ホスフェートエステル、ポリエチレングリコール、ポリエチレンイミン、ポリエチレンオキシド、ポリビニルアルコール、ポリビニルピロリジノン、澱粉、スチレンマレイン酸無水物、スルホン化アクリル、スルホン化ポリスチレン、スルホポリエステル、ロジン酸、及びこれらの混合物から成る群から選択される、請求項6に記載の方法。
- 該添加剤が、水酸化アンモニウム、水酸化第四アンモニウム、アミン、アルカノールアミン、元素水酸化物、元素アルコキシド、メタンスルホン酸、p−トルエンスルホン酸、ドデシルベンゼンスルホン酸、蟻酸、硫酸、硝酸、リン酸、又はこれらの混合物から成る群から選択される、請求項6に記載の方法。
- 該基板が、約25℃〜約400℃の温度まで加熱される、請求項6に記載の方法。
- 該無機基板が半導体ウエハー、フラットパネルディスプレイ、又はプリント回路板を含む、請求項6に記載の方法。
- 前記塗布が、スプレー塗布、スピン塗布、又はスリット塗布を含む、請求項6に記載の方法。
- 該リンス剤が、水、アセトン、イソプロピルアルコール、又はこれらの混合物である、請求項6に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/413,085 | 2009-03-27 | ||
US12/413,085 US8444768B2 (en) | 2009-03-27 | 2009-03-27 | Compositions and methods for removing organic substances |
PCT/US2010/000776 WO2010110848A1 (en) | 2009-03-27 | 2010-03-15 | Compositions and methods for removing organic substances |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012522264A true JP2012522264A (ja) | 2012-09-20 |
JP2012522264A5 JP2012522264A5 (ja) | 2013-04-18 |
Family
ID=42173237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012501991A Pending JP2012522264A (ja) | 2009-03-27 | 2010-03-15 | 有機物質を除去するための組成物及び方法 |
Country Status (8)
Country | Link |
---|---|
US (3) | US8444768B2 (ja) |
EP (1) | EP2411874A1 (ja) |
JP (1) | JP2012522264A (ja) |
KR (1) | KR20110137818A (ja) |
CN (1) | CN102449554A (ja) |
SG (1) | SG174416A1 (ja) |
TW (1) | TW201039386A (ja) |
WO (1) | WO2010110848A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012522068A (ja) * | 2009-03-27 | 2012-09-20 | イーストマン ケミカル カンパニー | 有機物質の除去のための組成物および方法 |
WO2015083636A1 (ja) * | 2013-12-03 | 2015-06-11 | Jsr株式会社 | 洗浄液、半導体基板洗浄方法、および金属パターン形成方法 |
JP2018511079A (ja) * | 2015-03-12 | 2018-04-19 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 低pka駆動ポリマーストリップ中の電荷錯体銅保護を促進する組成物および方法 |
JPWO2018062053A1 (ja) * | 2016-09-30 | 2019-09-19 | 東京応化工業株式会社 | 洗浄組成物、洗浄方法、及び半導体の製造方法 |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US7632796B2 (en) * | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
WO2014160962A2 (en) | 2013-03-29 | 2014-10-02 | Life Technologies Corporation | Method for treating a semiconductor device |
JP5476388B2 (ja) * | 2008-10-09 | 2014-04-23 | アバントール パフォーマンス マテリアルズ, インコーポレイテッド | 酸化銅エッチ残渣除去および、銅電着の防止のための水性の酸性洗浄用組成物 |
KR101579846B1 (ko) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US8614053B2 (en) * | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
JP5624753B2 (ja) * | 2009-03-31 | 2014-11-12 | 東京応化工業株式会社 | リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法 |
KR101799602B1 (ko) * | 2009-05-07 | 2017-11-20 | 바스프 에스이 | 레지스트 스트리핑 조성물 및 전기 소자의 제조 방법 |
US8449681B2 (en) * | 2010-12-16 | 2013-05-28 | Intermolecular, Inc. | Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate |
JP5817139B2 (ja) | 2011-02-18 | 2015-11-18 | 富士通株式会社 | 化合物半導体装置の製造方法及び洗浄剤 |
CN102672297B (zh) * | 2011-03-11 | 2015-03-04 | 华晴国际有限公司 | 应用于表面粘着锡膏印刷装置的水基溶液自动清洗方法 |
FR2976290B1 (fr) * | 2011-06-09 | 2014-08-15 | Jerome Daviot | Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques |
US8957007B2 (en) * | 2011-08-17 | 2015-02-17 | John Cleaon Moorre | Aluminum safe compositions for removing cured polysulfide resins |
US9335206B2 (en) * | 2012-08-30 | 2016-05-10 | Kla-Tencor Corporation | Wave front aberration metrology of optics of EUV mask inspection system |
US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
US20140137899A1 (en) * | 2012-11-21 | 2014-05-22 | Dynaloy, Llc | Process for removing substances from substrates |
US9158202B2 (en) * | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
CN103257534B (zh) * | 2013-05-02 | 2015-07-15 | 上海华力微电子有限公司 | 光刻返工去胶工艺 |
CN103286091B (zh) * | 2013-06-09 | 2017-09-19 | 京东方科技集团股份有限公司 | 一种基板的清洗方法 |
US9784072B2 (en) | 2013-08-30 | 2017-10-10 | Halliburton Energy Services, Inc. | Removing cured resins from subterranean formations and completions |
WO2015069288A1 (en) * | 2013-11-11 | 2015-05-14 | Halliburton Energy Services, Inc. | Removing resin coatings from surfaces |
US9365809B1 (en) | 2014-03-12 | 2016-06-14 | 710-Cleaner, Llc | Cleaning solution for smoking paraphernalia and method therefor |
EP3143117B1 (en) * | 2014-05-13 | 2019-09-04 | Basf Se | Tin pull-back and cleaning composition |
KR101554103B1 (ko) * | 2014-06-10 | 2015-09-17 | 동우 화인켐 주식회사 | 레지스트 도포성 개선용 및 제거용 신너 조성물 |
TWI546376B (zh) * | 2014-08-25 | 2016-08-21 | 柯伊珊 | 晶圓處理液及使用其移除並平坦晶圓邊緣塗佈薄膜及平坦化光阻表面的設備和方法 |
US9548199B2 (en) * | 2014-09-09 | 2017-01-17 | Texas Instruments Incorporated | Method of forming a thin film that eliminates air bubbles |
KR102296739B1 (ko) | 2014-10-27 | 2021-09-01 | 삼성전자 주식회사 | 포토마스크용 세정 조성물을 이용한 집적회로 소자 제조 방법 |
US10072237B2 (en) * | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
WO2017023348A1 (en) * | 2015-08-06 | 2017-02-09 | Kyzen Corporation | Water tolerant solutions and process to remove polymeric soils and clean micro electronic substrates |
EP3424074B1 (en) | 2016-07-01 | 2021-10-27 | Carbon, Inc. | Method and system for spin-coating multi-layer thin films having liquid conservation features |
CN106154772A (zh) * | 2016-08-01 | 2016-11-23 | 江阴润玛电子材料股份有限公司 | 一种半导体凸块制程用正胶去胶液 |
KR102305256B1 (ko) * | 2016-09-21 | 2021-09-29 | 가부시키가이샤 후지미인코퍼레이티드 | 표면 처리 조성물 |
KR20180069185A (ko) * | 2016-12-14 | 2018-06-25 | 삼성전자주식회사 | 기판 가공 방법 및 접착층 세정 조성물 |
CN106773562A (zh) * | 2016-12-23 | 2017-05-31 | 昆山艾森半导体材料有限公司 | 一种去除az光刻胶的去胶液 |
JP6899220B2 (ja) * | 2017-01-11 | 2021-07-07 | 株式会社ダイセル | レジスト除去用組成物 |
CN107085357A (zh) * | 2017-06-23 | 2017-08-22 | 昆山欣谷微电子材料有限公司 | 一种光刻胶剥离液 |
US10948826B2 (en) * | 2018-03-07 | 2021-03-16 | Versum Materials Us, Llc | Photoresist stripper |
CN110161812A (zh) * | 2019-06-06 | 2019-08-23 | 成都中电熊猫显示科技有限公司 | 重工药液及其制备方法、重工装置 |
CN115461215A (zh) * | 2020-05-11 | 2022-12-09 | 克里奥瓦克公司 | 具有可溶性粘结层的多层膜和用于消散的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63168651A (ja) * | 1987-01-06 | 1988-07-12 | Asahi Chem Ind Co Ltd | フオトレジストの剥離剤組成物 |
JPH07295239A (ja) * | 1994-04-26 | 1995-11-10 | Nec Corp | 剥離液組成物および剥離洗浄方法 |
JP2002520659A (ja) * | 1998-07-10 | 2002-07-09 | クラリアント・インターナシヨナル・リミテッド | フォトレジストおよび有機物質を基体表面から取り除くための組成物 |
Family Cites Families (149)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH225144A (de) | 1941-10-27 | 1943-01-15 | Chem Ind Basel | Reinigungsmittel. |
US3582401A (en) | 1967-11-15 | 1971-06-01 | Mallinckrodt Chemical Works | Photosensitive resist remover compositions and methods |
US3779993A (en) | 1970-02-27 | 1973-12-18 | Eastman Kodak Co | Polyesters and polyesteramides containing ether groups and sulfonate groups in the form of a metallic salt |
US3734874A (en) | 1970-02-27 | 1973-05-22 | Eastman Kodak Co | Polyesters and polyesteramides containing ether groups and sulfonate groups in the form of a metallic salt |
US3724874A (en) * | 1971-07-30 | 1973-04-03 | G Simpson | Vehicle drawbar assembly |
US3828010A (en) | 1973-06-04 | 1974-08-06 | Eastman Kodak Co | Water-dissipatable polyesteramides |
US4169068A (en) | 1976-08-20 | 1979-09-25 | Japan Synthetic Rubber Company Limited | Stripping liquor composition for removing photoresists comprising hydrogen peroxide |
US4231804A (en) | 1978-01-17 | 1980-11-04 | Petterson Robert C | Vapor stripping method |
US4233196A (en) | 1979-04-30 | 1980-11-11 | Eastman Kodak Company | Polyester and polyesteramide compositions |
US4861512A (en) | 1984-12-21 | 1989-08-29 | The Procter & Gamble Company | Sulfonated block polyesters useful as soil release agents in detergent compositions |
US4744834A (en) | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
IE59971B1 (en) | 1986-11-10 | 1994-05-04 | Baker J T Inc | Stripping compositions and their use for stripping resists from substrates |
US4770713A (en) | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
DE3765773D1 (de) | 1986-12-24 | 1990-11-29 | Rhone Poulenc Chimie | Latex gegen wiederverschmutzung beim waschen von textilien. |
WO1990000579A1 (en) | 1988-07-15 | 1990-01-25 | Advanced Chemical Systems International Corporation | Stripping composition using n-cyclohexyl-2-pyrrolidone |
DE3902748A1 (de) | 1989-01-31 | 1990-08-02 | Hoechst Ag | Entschichtungsloesung fuer elektrophotographisch bebilderte platten und verfahren zum entschichten solcher platten |
US5182043A (en) | 1989-10-31 | 1993-01-26 | The Procter & Gamble Company | Sulfobenzoyl end-capped ester oligomers useful as soil release agents in granular detergent compositions |
DE4001415A1 (de) | 1990-01-19 | 1991-07-25 | Basf Ag | Polyester, die nichtionische tenside einkondensiert enthalten, ihre herstellung und ihre verwendung in waschmitteln |
US5006598A (en) | 1990-04-24 | 1991-04-09 | Eastman Kodak Company | Water-dispersible polyesters imparting improved water resistance properties to inks |
US5091103A (en) | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
US6110881A (en) | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US5496491A (en) | 1991-01-25 | 1996-03-05 | Ashland Oil Company | Organic stripping composition |
US5431847A (en) | 1991-07-17 | 1995-07-11 | Charles B. Barris | Aqueous cleaning concentrates |
US5218042A (en) | 1991-09-25 | 1993-06-08 | Thauming Kuo | Water-dispersible polyester resins and process for their preparation |
US5268260A (en) | 1991-10-22 | 1993-12-07 | International Business Machines Corporation | Photoresist develop and strip solvent compositions and method for their use |
FR2682956B1 (fr) | 1991-10-29 | 1994-01-07 | Rhone Poulenc Chimie | Procede de preparation de polyesters hydrosolubles et/ou hydrodispersables et utilisation de ces polyesters pour l'encollage de fils textiles. |
DE4222012A1 (de) | 1991-12-21 | 1993-06-24 | Hoechst Ag | Waessrige fuellerzusammensetzung |
US6825156B2 (en) | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US5411596A (en) | 1993-04-01 | 1995-05-02 | Deluxe Corporation | Oil based composition clean up method and composition for use therein |
US5415807A (en) | 1993-07-08 | 1995-05-16 | The Procter & Gamble Company | Sulfonated poly-ethoxy/propoxy end-capped ester oligomers suitable as soil release agents in detergent compositions |
US5843878A (en) | 1993-07-08 | 1998-12-01 | Procter & Gamble Company | Detergent compositions comprising soil release agents |
US5710119A (en) | 1993-07-23 | 1998-01-20 | The Procter & Gamble Company | Detergent compositions inhibiting dye transfer comprising copolymers of N-vinylimidazole and N-vinylpyrrolidone |
DE4332170A1 (de) | 1993-09-22 | 1995-03-23 | Hoechst Ag | Polyestersalze und ihre Verwendung als Ladungssteuermittel |
US6187729B1 (en) | 1993-12-14 | 2001-02-13 | Petroferm Inc. | Cleaning composition comprising solvating agent and rinsing agent |
US5543488A (en) | 1994-07-29 | 1996-08-06 | Eastman Chemical Company | Water-dispersible adhesive composition and process |
KR970700743A (ko) | 1993-12-29 | 1997-02-12 | 해리 제이. 그윈넬 | 수분산성 접착제 조성물 및 방법(water-dispersible adhesive composition and process) |
FR2720400B1 (fr) | 1994-05-30 | 1996-06-28 | Rhone Poulenc Chimie | Nouveaux polyesters sulfones et leur utilisation comme agent anti-salissure dans les compositions détergentes, de rinçage, d'adoucissage et de traitement des textiles. |
WO1995031528A1 (en) | 1994-05-13 | 1995-11-23 | Unilever N.V. | Detergent composition |
DE19539394A1 (de) | 1994-10-13 | 1996-04-25 | Lobeck Concept Ag | Farb-, Lack- und Folienablösemittel sowie Verwendung desselben |
EP0709419B1 (en) | 1994-10-24 | 2004-04-14 | Eastman Chemical Company | Water-dispersible block copolyesters |
US6162890A (en) | 1994-10-24 | 2000-12-19 | Eastman Chemical Company | Water-dispersible block copolyesters useful as low-odor adhesive raw materials |
US5691298A (en) | 1994-12-14 | 1997-11-25 | The Procter & Gamble Company | Ester oligomers suitable as soil release agents in detergent compositions |
US5554312A (en) | 1995-01-13 | 1996-09-10 | Ashland | Photoresist stripping composition |
US5547612A (en) | 1995-02-17 | 1996-08-20 | National Starch And Chemical Investment Holding Corporation | Compositions of water soluble polymers containing allyloxybenzenesulfonic acid monomer and methallyl sulfonic acid monomer and methods for use in aqueous systems |
JPH08231989A (ja) | 1995-02-23 | 1996-09-10 | Kurita Water Ind Ltd | 洗浄剤組成物及び洗浄方法 |
US6060547A (en) | 1995-04-28 | 2000-05-09 | The Proctor & Gamble Company | Film forming foundation |
EP0752468B1 (en) | 1995-07-06 | 2003-08-27 | Unilever Plc | Soil release polyetheresters and detergent compositions containing them |
US5728671A (en) | 1995-12-21 | 1998-03-17 | The Procter & Gamble Company | Soil release polymers with fluorescent whitening properties |
JP3255931B2 (ja) | 1996-06-28 | 2002-02-12 | ザ、プロクター、エンド、ギャンブル、カンパニー | 特定のアルキルベンゼンスルホネート界面活性剤を含有する非水性洗剤組成物 |
JP3645362B2 (ja) | 1996-07-22 | 2005-05-11 | 富士写真フイルム株式会社 | ネガ型画像記録材料 |
US5989353A (en) | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
JPH10249913A (ja) | 1997-03-12 | 1998-09-22 | Japan Steel Works Ltd:The | 注水発泡脱揮方法及び装置 |
US6240933B1 (en) | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
US6815151B2 (en) | 1997-09-05 | 2004-11-09 | Tokyo Ohika Kogyo Co., Ltd. | Rinsing solution for lithography and method for processing substrate with the use of the same |
US5962388A (en) | 1997-11-26 | 1999-10-05 | The Procter & Gamble Company | Acidic aqueous cleaning compositions |
JP3810538B2 (ja) | 1997-11-28 | 2006-08-16 | 富士写真フイルム株式会社 | ポジ型画像形成材料 |
US5863881A (en) | 1998-02-02 | 1999-01-26 | Citra Science Ltd. | Heavy oil remover |
JP3366859B2 (ja) | 1998-03-05 | 2003-01-14 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性ポリイミド前駆体用現像液及びこれを用いたパターン製造法 |
US6348679B1 (en) | 1998-03-17 | 2002-02-19 | Ameritherm, Inc. | RF active compositions for use in adhesion, bonding and coating |
US5985816A (en) | 1998-04-17 | 1999-11-16 | Dotolo Research Ltd. | Heavy oil remover |
CN100370360C (zh) | 1998-05-18 | 2008-02-20 | 马林克罗特有限公司 | 用于清洗微电子衬底的含硅酸盐碱性组合物 |
US6319884B2 (en) | 1998-06-16 | 2001-11-20 | International Business Machines Corporation | Method for removal of cured polyimide and other polymers |
KR100288769B1 (ko) | 1998-07-10 | 2001-09-17 | 윤종용 | 포토레지스트용스트리퍼조성물 |
KR100268108B1 (ko) | 1998-08-25 | 2000-12-01 | 윤종용 | 포토레지스트용 스트리퍼 조성물 |
US20040065540A1 (en) | 2002-06-28 | 2004-04-08 | Novellus Systems, Inc. | Liquid treatment using thin liquid layer |
DE19906367A1 (de) | 1999-02-16 | 2000-08-17 | Clariant Gmbh | Verwendung von Kammpolymeren als Schutzablösepolymere |
US20040029395A1 (en) * | 2002-08-12 | 2004-02-12 | Peng Zhang | Process solutions containing acetylenic diol surfactants |
US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US20030017960A1 (en) * | 1999-06-15 | 2003-01-23 | The Procter & Gamble Company | Cleaning compositions |
TW593674B (en) | 1999-09-14 | 2004-06-21 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
US6093689A (en) | 1999-09-20 | 2000-07-25 | Dotolo Research Ltd. | Asphalt and heavy oil degreaser |
JP2001100436A (ja) | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
US6369016B1 (en) | 1999-11-08 | 2002-04-09 | Dotolo Research Ltd. | Heavy oil remover |
US6310263B1 (en) | 1999-11-08 | 2001-10-30 | Dotolo Research Ltd. | Heavy oil remover |
KR20010065038A (ko) | 1999-12-21 | 2001-07-11 | 구본준, 론 위라하디락사 | 박막트랜지스터 및 액정표시장치용 어레이기판 제조방법 |
DE10003137A1 (de) | 2000-01-26 | 2001-08-02 | Clariant Gmbh | Wäßrige oder wäßrig-alkoholische Körperreinigungsmittel enthaltend Oligoester |
TW558736B (en) | 2000-02-26 | 2003-10-21 | Shipley Co Llc | Method of reducing defects |
JP2001291989A (ja) | 2000-04-04 | 2001-10-19 | Tokin Corp | 金属筐体を備えた電子部品 |
US6455479B1 (en) | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
US6949495B2 (en) | 2000-09-01 | 2005-09-27 | Tokuyama Corporation | Cleaning solution for removing residue |
JP3738996B2 (ja) | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
US7385751B2 (en) * | 2001-06-11 | 2008-06-10 | Sipix Imaging, Inc. | Process for imagewise opening and filling color display components and color displays manufactured thereof |
JP4810764B2 (ja) | 2001-06-29 | 2011-11-09 | 三菱瓦斯化学株式会社 | レジスト剥離剤組成物 |
MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
JP2004538503A (ja) | 2001-07-13 | 2004-12-24 | イーケーシー テクノロジー,インコーポレイティド | スルホキシド−ピロリドン(ピロリジノン)−アルカノールアミン系剥離および洗浄組成物 |
US6657017B2 (en) | 2001-07-27 | 2003-12-02 | Rhodia Inc | Sulfonated polyester compounds with enhanced shelf stability and processes of making the same |
US6756183B2 (en) | 2001-08-24 | 2004-06-29 | Fuji Photo Film Co., Ltd. | Method for preparing lithographic printing plate |
WO2003021642A2 (en) | 2001-08-31 | 2003-03-13 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
US6551973B1 (en) | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
JP3914842B2 (ja) | 2001-10-23 | 2007-05-16 | 有限会社ユーエムエス | 有機被膜の除去方法および除去装置 |
US7543592B2 (en) | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US6943142B2 (en) | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
CN1441043A (zh) | 2002-02-06 | 2003-09-10 | 希普利公司 | 清洁用组合物 |
FR2837205B1 (fr) | 2002-03-15 | 2005-05-06 | Rhodia Chimie Sa | Copolyesteramides et leur utilisation comme agent antisalissure |
JP3813890B2 (ja) | 2002-03-22 | 2006-08-23 | 富士写真フイルム株式会社 | 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
US6827807B2 (en) | 2002-04-09 | 2004-12-07 | Eastman Chemical Company | Process for producing multilayer structures having a layer formed from a blend of an ethylene-alpha-olefin interpolymer and an ethylene-alkyl acrylate interpolymer |
JP2004252395A (ja) | 2002-05-07 | 2004-09-09 | Shipley Co Llc | 残渣削減安定濃縮物 |
US20040159335A1 (en) | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
FR2840915B1 (fr) | 2002-06-18 | 2004-08-27 | Ferrari S Tissage & Enduct Sa | Procede de revetement d'un textile architectural avec au moins une couche d'elastomere silicone, a partir d'une emulsion silicone aqueuse et textile architectural ainsi revetu |
US7393819B2 (en) | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
US6677286B1 (en) | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
JP4150557B2 (ja) | 2002-09-02 | 2008-09-17 | 富士フイルム株式会社 | 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
US6837943B2 (en) | 2002-12-17 | 2005-01-04 | Samsung Electronics Co., Ltd. | Method and apparatus for cleaning a semiconductor substrate |
KR100835606B1 (ko) | 2002-12-30 | 2008-06-09 | 엘지디스플레이 주식회사 | 구리용 레지스트 제거용 조성물 |
JP4085262B2 (ja) | 2003-01-09 | 2008-05-14 | 三菱瓦斯化学株式会社 | レジスト剥離剤 |
TWI286679B (en) | 2003-06-04 | 2007-09-11 | Kao Corp | Removing agent composition |
US7198681B2 (en) | 2003-10-23 | 2007-04-03 | Halliburton Energy Services, Inc. | Methods and compositions for removing resin coatings |
JP4381778B2 (ja) * | 2003-11-17 | 2009-12-09 | パナソニック株式会社 | テクスチャ処理装置 |
US7183245B2 (en) | 2003-12-23 | 2007-02-27 | General Chemical Performance Products, Llc | Stripper for cured negative-tone isoprene-based photoresist and bisbenzocyclobutene coatings |
TWI365491B (en) | 2003-12-24 | 2012-06-01 | Kao Corp | Composition for cleaning semiconductor device |
JP4166167B2 (ja) | 2004-02-05 | 2008-10-15 | 富士フイルム株式会社 | 感光性平版印刷版用現像液及び平版印刷版の製版方法 |
US8338087B2 (en) | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
EP2246741A1 (en) | 2004-05-19 | 2010-11-03 | Fujifilm Corporation | Image recording method |
US8030263B2 (en) | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
JP4792396B2 (ja) | 2004-08-31 | 2011-10-12 | 三洋化成工業株式会社 | 界面活性剤 |
US7923423B2 (en) | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
KR101331747B1 (ko) | 2005-01-27 | 2013-11-20 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 반도체 기판 처리 조성물 |
JP4678673B2 (ja) | 2005-05-12 | 2011-04-27 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US7700533B2 (en) | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
JP4741315B2 (ja) | 2005-08-11 | 2011-08-03 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ポリマー除去組成物 |
US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US20070243773A1 (en) | 2005-10-28 | 2007-10-18 | Phenis Michael T | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US20070224811A1 (en) | 2006-03-16 | 2007-09-27 | Xinming Wang | Substrate processing method and substrate processing apparatus |
US7402341B2 (en) | 2006-05-23 | 2008-07-22 | Printar Ltd. | Methods and compositions for printable surface pre-treatment |
US8288330B2 (en) | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
JP4777197B2 (ja) | 2006-09-11 | 2011-09-21 | 富士フイルム株式会社 | 洗浄液及びそれを用いた洗浄方法 |
US20080139436A1 (en) | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
US20080163892A1 (en) | 2007-01-08 | 2008-07-10 | United Microelectronics Corp. | Cleaning wafer including detergent layer for exposure apparatus of immersion lithography system, composition of detergent layer, method of using cleaning wafer and application system |
US20080223414A1 (en) | 2007-03-13 | 2008-09-18 | Dober Chemical Corporation | Compositions and methods for removing titanium dioxide from surfaces |
US20080230092A1 (en) | 2007-03-23 | 2008-09-25 | Alexander Sou-Kang Ko | Method and apparatus for single-substrate cleaning |
US7799139B2 (en) | 2007-03-28 | 2010-09-21 | Intel Corporation | Chemistry for removal of photo resist, organic sacrificial fill material and etch polymer |
CN101827928B (zh) | 2007-08-08 | 2012-10-03 | 荒川化学工业株式会社 | 用于除去无铅助焊剂的清洁剂组合物以及用于除去无铅助焊剂的方法 |
KR101488265B1 (ko) | 2007-09-28 | 2015-02-02 | 삼성디스플레이 주식회사 | 박리 조성물 및 박리 방법 |
US20090120457A1 (en) | 2007-11-09 | 2009-05-14 | Surface Chemistry Discoveries, Inc. | Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices |
US8226775B2 (en) | 2007-12-14 | 2012-07-24 | Lam Research Corporation | Methods for particle removal by single-phase and two-phase media |
US20090163402A1 (en) | 2007-12-19 | 2009-06-25 | Eastman Chemical Company | Fabric softener |
US8404626B2 (en) | 2007-12-21 | 2013-03-26 | Lam Research Corporation | Post-deposition cleaning methods and formulations for substrates with cap layers |
US7687447B2 (en) | 2008-03-13 | 2010-03-30 | Air Products And Chemicals, Inc. | Semi-aqueous stripping and cleaning composition containing aminobenzenesulfonic acid |
JP5066471B2 (ja) | 2008-03-26 | 2012-11-07 | 富士フイルム株式会社 | 平版印刷版原版の製版方法 |
US8314055B2 (en) | 2008-06-02 | 2012-11-20 | Lam Research Corporation | Materials and systems for advanced substrate cleaning |
US7968506B2 (en) | 2008-09-03 | 2011-06-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process |
US8925001B2 (en) | 2008-09-12 | 2014-12-30 | At&T Intellectual Property I, L.P. | Media stream generation based on a category of user expression |
US8105997B2 (en) | 2008-11-07 | 2012-01-31 | Lam Research Corporation | Composition and application of a two-phase contaminant removal medium |
US8227394B2 (en) | 2008-11-07 | 2012-07-24 | Lam Research Corporation | Composition of a cleaning material for particle removal |
JP5639755B2 (ja) | 2008-11-27 | 2014-12-10 | 富士フイルム株式会社 | 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液 |
US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US8309502B2 (en) | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
-
2009
- 2009-03-27 US US12/413,085 patent/US8444768B2/en not_active Expired - Fee Related
-
2010
- 2010-03-15 EP EP10711102A patent/EP2411874A1/en not_active Withdrawn
- 2010-03-15 CN CN2010800237981A patent/CN102449554A/zh active Pending
- 2010-03-15 SG SG2011066636A patent/SG174416A1/en unknown
- 2010-03-15 KR KR1020117025376A patent/KR20110137818A/ko not_active Application Discontinuation
- 2010-03-15 JP JP2012501991A patent/JP2012522264A/ja active Pending
- 2010-03-15 WO PCT/US2010/000776 patent/WO2010110848A1/en active Application Filing
- 2010-03-25 TW TW099108946A patent/TW201039386A/zh unknown
-
2012
- 2012-01-10 US US13/346,877 patent/US8389455B2/en not_active Expired - Fee Related
-
2013
- 2013-01-02 US US13/732,710 patent/US20130123411A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63168651A (ja) * | 1987-01-06 | 1988-07-12 | Asahi Chem Ind Co Ltd | フオトレジストの剥離剤組成物 |
JPH07295239A (ja) * | 1994-04-26 | 1995-11-10 | Nec Corp | 剥離液組成物および剥離洗浄方法 |
JP2002520659A (ja) * | 1998-07-10 | 2002-07-09 | クラリアント・インターナシヨナル・リミテッド | フォトレジストおよび有機物質を基体表面から取り除くための組成物 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012522068A (ja) * | 2009-03-27 | 2012-09-20 | イーストマン ケミカル カンパニー | 有機物質の除去のための組成物および方法 |
WO2015083636A1 (ja) * | 2013-12-03 | 2015-06-11 | Jsr株式会社 | 洗浄液、半導体基板洗浄方法、および金属パターン形成方法 |
JP2018511079A (ja) * | 2015-03-12 | 2018-04-19 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 低pka駆動ポリマーストリップ中の電荷錯体銅保護を促進する組成物および方法 |
JP7045190B2 (ja) | 2015-03-12 | 2022-03-31 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 低pka駆動ポリマーストリップ中の電荷錯体銅保護を促進する組成物および方法 |
JPWO2018062053A1 (ja) * | 2016-09-30 | 2019-09-19 | 東京応化工業株式会社 | 洗浄組成物、洗浄方法、及び半導体の製造方法 |
US11441101B2 (en) | 2016-09-30 | 2022-09-13 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition, cleaning method, and method for manufacturing semiconductor |
Also Published As
Publication number | Publication date |
---|---|
KR20110137818A (ko) | 2011-12-23 |
US8444768B2 (en) | 2013-05-21 |
SG174416A1 (en) | 2011-10-28 |
TW201039386A (en) | 2010-11-01 |
CN102449554A (zh) | 2012-05-09 |
US20120108486A1 (en) | 2012-05-03 |
US20100242998A1 (en) | 2010-09-30 |
WO2010110848A1 (en) | 2010-09-30 |
EP2411874A1 (en) | 2012-02-01 |
US20130123411A1 (en) | 2013-05-16 |
US8389455B2 (en) | 2013-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8389455B2 (en) | Compositions and methods for removing organic substances | |
JP5576471B2 (ja) | 有機物質の除去のための組成物および方法 | |
US8916338B2 (en) | Processes and compositions for removing substances from substrates | |
US20120073607A1 (en) | Polymeric or monomeric compositions comprising at least one mono-amide and/or at least one diamide for removing substances from substrates and methods for using the same | |
JP5860020B2 (ja) | 厚いフィルム・レジストを除去するための剥離及びクリーニング用組成物 | |
KR101493294B1 (ko) | 두꺼운 필름 레지스트를 제거하기 위한 스트리핑 및 세정 조성물 | |
EP3743773B1 (en) | Photoresist remover compositions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130228 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130228 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140304 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140805 |