JP2012517684A - 半導体プロセスシステムにおけるイオンソース(イオン源)のクリーニング - Google Patents
半導体プロセスシステムにおけるイオンソース(イオン源)のクリーニング Download PDFInfo
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- JP2012517684A JP2012517684A JP2011550109A JP2011550109A JP2012517684A JP 2012517684 A JP2012517684 A JP 2012517684A JP 2011550109 A JP2011550109 A JP 2011550109A JP 2011550109 A JP2011550109 A JP 2011550109A JP 2012517684 A JP2012517684 A JP 2012517684A
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
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Abstract
【選択図】図7
Description
3F2(g)+W(s)→WF6(g) (1)
6F(g)+W(s)→WF6(g) (2)
同様に、(3)のようなクリーニングガスとアークチャンバのタングステン材料との間の反応があってもよい。
3XeF2+W→3Xe+WF6 (3)
これに代えて、WF6(またはWF5またはWF4)は、システムに直接供給されてもよい。
WF6→W+3F2 (4)
2WF5→2W+5F2 (5)
WF4→W+2F2 (6)
WF6(g)+2W(s)→3WF2(g) (7)
2WF6(g)+W(s)→3WF4(g) (8)
5WF6(g)+W(s)→6WF5(g) (9)
2XeF2(g)+Si(s)→2Xe(g)+SiF4(g) (10)
シリコン/XeF2反応は、活性化(換言すればプラズマまたは加熱)無しで起こる。XeF2とSiの反応速度は、XeF2とSiO2の反応速度より大変大きく、XeF2はSiとの反応に対して選択的である。
3XeF2(g)+2B(s)→3Xe(g)+2BF3(g) (11)
XeF2の砒素、リンおよびゲルマニウムへのエッチャントとしての使用は本発明により予期され、下記の反応を含んでよい。
5XeF2(g)+2As(s)→5Xe(g)+2AsF5(g) (12)
5XeF2(g)+2P(s)→5Xe(g)+2PF5(g) (13)
2XeF2(g)+Ge(s)→2Xe(g)+GeF4(g) (14)
このような反応はエネルギー活性化を含んでまたは含まずに実行されてよい。
5XeF2(g)+2P(s)→5Xe(g)+2PF5(g)
合成エンタルピー(kJ/mol)は、Lange's Handbook of Chemistry(第14版)から取られ、反応時の放熱を決定するためにここにリストされる。XeF2(−164)、Xe(0)、P(0)およびPF5(−1594.4)
Claims (8)
- イオンインプランテーションシステム内の間接加熱カソードソースの状態を制御する方法であって、
(a)予め定められた時間におけるカソードバイアス電力を測定することで、前記間接加熱カソードソースの消費電力を決定することと、
(b)前記予め定められた時間における前記消費電力と初期電力とを比較することと、(c)この比較に応じて、前記間接加熱カソードの状態を制御するために(i)または(ii)の修正動作を行うこととを備え、
(i)の修正動作は、もし前記予め定められた時間の前記消費電力が前記初期電力よりも高ければ、前記間接加熱カソードをエッチングすることであり、
(ii)の修正動作は、もし前記予め定められた時間の前記消費電力が前記初期電力よりも低ければ、前記間接加熱カソードを再生することである、方法。 - (c)(i)の修正動作におけるエッチングは、エッチングに十分となるような低から中温度条件下で、前記間接加熱カソードを操作することを含む、請求項1に記載の方法。
- (c)(ii)の修正動作における再生は、前記間接加熱カソード上にプラズマ状態でフッ素化ガスを流すことを含む、請求項1に記載の方法。
- 前記フッ素化ガスは、XeF2、XeF4、XeF6、GeF4、SiF4、BF3、AsF5、AsF3、PF5、PF3、F2、TaF3、TaF5、WF6、WF5、WF4、NF3、IF5、IF7、KrF2、SF6、C2F6、CF4、ClF3、N2F4、N2F2、N3F、NFH2、NH2F、BrF3、C3F8、C4F8、C5F8、CHF3、CH2F2、CH3F、COF2、HF、C2HF5、C2H2F4、C2H3F3、C2H4F2、C2H5F、C3F6およびMoF6のうち、1または複数を含む、請求項3に記載の方法。
- (c)(ii)の修正動作の再生は、金属堆積が起こるのに十分な高温条件下で、前記間接加熱カソードを操作することを含む、請求項1に記載の方法。
- 前記フッ素化ガスは、XeF2およびN2F4のうち1または複数を含む、請求項4に記載の方法。
- イオンソースのアークチャンバ内にカソードを備えるイオンインプランテーションシステムを動作させて、前記イオンソースの動作効率を維持する方法であって、
(a)および(b)からなるグループから選択される条件下で、前記カソードとタングステン試薬とを接触させることを含み、
(a)の条件は、前記カソード上にタングステンの堆積を生じさせるような条件であり、
(b)の条件は、堆積された材料が前記カソードからエッチングされるような条件である方法。 - 1または複数の部材からイオン化に関連した堆積物を少なくとも部分的に除去するために、イオンインプランテーションシステムの当該1または複数の部材をクリーニングする方法であって、
(a)および(b)からなるグループから選択される条件下でシステムを通してクリーニングガスを流すことを含み、
(a)の条件は、カソード上に材料の堆積が生じるような条件であり、
(b)の条件は、前記カソードから堆積された材料のエッチングが生じるような条件である、方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140114735A (ko) * | 2013-03-19 | 2014-09-29 | 가부시키가이샤 에스이엔 | 이온주입장치 및 이온주입장치의 클리닝방법 |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7819981B2 (en) | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
CN102747336A (zh) | 2006-04-26 | 2012-10-24 | 高级技术材料公司 | 半导体加工系统的清洁方法和装置 |
SG188150A1 (en) * | 2008-02-11 | 2013-03-28 | Advanced Tech Materials | Ion source cleaning in semiconductor processing systems |
US8809800B2 (en) * | 2008-08-04 | 2014-08-19 | Varian Semicoductor Equipment Associates, Inc. | Ion source and a method for in-situ cleaning thereof |
US20110021011A1 (en) * | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
US20110073136A1 (en) * | 2009-09-10 | 2011-03-31 | Matheson Tri-Gas, Inc. | Removal of gallium and gallium containing materials |
US20110108058A1 (en) * | 2009-11-11 | 2011-05-12 | Axcelis Technologies, Inc. | Method and apparatus for cleaning residue from an ion source component |
TWI466179B (zh) * | 2010-02-26 | 2014-12-21 | Advanced Tech Materials | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
KR20180104171A (ko) * | 2010-09-15 | 2018-09-19 | 프랙스에어 테크놀로지, 인코포레이티드 | 이온 소스의 수명 연장 방법 |
US9984855B2 (en) * | 2010-11-17 | 2018-05-29 | Axcelis Technologies, Inc. | Implementation of co-gases for germanium and boron ion implants |
US9805912B2 (en) | 2010-11-17 | 2017-10-31 | Axcelis Technologies, Inc. | Hydrogen COGas for carbon implant |
RU2522662C2 (ru) * | 2011-08-03 | 2014-07-20 | Федеральное государственное бюджетное учреждение "Государственный научный центр Российской Федерации - Институт Теоретической и Экспериментальной Физики" (ФГБУ "ГНЦ РФ ИТЭФ") | Способ нерпрерываемого производства пучка ионов карборана с постоянной самоочисткой ионного источника и компонент системы экстракции ионного имплантатора |
KR20220025123A (ko) * | 2012-02-14 | 2022-03-03 | 엔테그리스, 아이엔씨. | 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류 |
US9064795B2 (en) | 2012-03-30 | 2015-06-23 | Varian Semiconductor Equipment Associates, Inc. | Technique for processing a substrate |
US9396902B2 (en) * | 2012-05-22 | 2016-07-19 | Varian Semiconductor Equipment Associates, Inc. | Gallium ION source and materials therefore |
US20130341761A1 (en) * | 2012-06-20 | 2013-12-26 | Ashwini K. Sinha | Methods for extending ion source life and improving ion source performance during carbon implantation |
US8603363B1 (en) * | 2012-06-20 | 2013-12-10 | Praxair Technology, Inc. | Compositions for extending ion source life and improving ion source performance during carbon implantation |
CN103785647A (zh) * | 2012-10-26 | 2014-05-14 | 上海华虹宏力半导体制造有限公司 | 离子注入设备自动清洁离子腔体以提高部件寿命的方法 |
US9552990B2 (en) * | 2012-12-21 | 2017-01-24 | Praxair Technology, Inc. | Storage and sub-atmospheric delivery of dopant compositions for carbon ion implantation |
US9570271B2 (en) | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
FR3024161B1 (fr) * | 2014-07-24 | 2016-08-12 | Altatech Semiconductor | Procede de nettoyage d'une chambre de depot |
TWI674614B (zh) | 2014-10-27 | 2019-10-11 | 美商恩特葛瑞斯股份有限公司 | 離子佈植方法及設備 |
WO2016182648A1 (en) * | 2015-05-08 | 2016-11-17 | Applied Materials, Inc. | Method for controlling a processing system |
JP6499754B2 (ja) * | 2015-05-25 | 2019-04-10 | 株式会社日立ハイテクノロジーズ | イオンミリング装置、及びイオンミリング方法 |
CN106298421A (zh) * | 2015-06-23 | 2017-01-04 | 应用材料公司 | 用以消除来自离子注入工艺的自燃副产物的方法和装置 |
FR3046801B1 (fr) * | 2016-01-19 | 2020-01-17 | Kobus Sas | Procede d'elimination d'un depot metallique dispose sur une surface dans une enceinte |
JP2018049915A (ja) * | 2016-09-21 | 2018-03-29 | マイクロン テクノロジー, インク. | 半導体装置及びその製造方法 |
US10256069B2 (en) * | 2016-11-24 | 2019-04-09 | Axcelis Technologies, Inc. | Phosphorous trifluoride co-gas for carbon implants |
US10361081B2 (en) * | 2016-11-24 | 2019-07-23 | Axcelis Technologies, Inc. | Phosphine co-gas for carbon implants |
US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
JP6529000B2 (ja) * | 2017-09-27 | 2019-06-12 | 日新イオン機器株式会社 | イオン源、イオン源の運転方法 |
US10700207B2 (en) | 2017-11-30 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device integrating backside power grid and related integrated circuit and fabrication method |
KR20200089764A (ko) * | 2017-12-15 | 2020-07-27 | 엔테그리스, 아이엔씨. | 플라즈마 플러드 건(pfg) 작동을 위해 불소 함유 가스 및 불활성 가스를 사용하는 방법 및 어셈블리 |
US11299802B2 (en) | 2018-05-17 | 2022-04-12 | Entegris, Inc. | Germanium tetraflouride and hydrogen mixtures for an ion implantation system |
US10643823B2 (en) | 2018-09-07 | 2020-05-05 | Varian Semiconductor Equipment Associates, Inc. | Foam in ion implantation system |
US11222768B2 (en) * | 2018-09-07 | 2022-01-11 | Varian Semiconductor Equipment Associates, Inc. | Foam in ion implantation system |
US10784079B2 (en) * | 2018-09-26 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion implantation system and source bushing thereof |
EP3895198A4 (en) * | 2018-12-15 | 2022-10-05 | Entegris, Inc. | FLUORINE ION IMPLANTATION PROCESS AND SYSTEM |
US11127601B2 (en) * | 2019-05-21 | 2021-09-21 | Applied Materials, Inc. | Phosphorus fugitive emission control |
CN111081516B (zh) * | 2019-12-27 | 2022-10-04 | 华虹半导体(无锡)有限公司 | 离子注入机清洁方法 |
TWI793852B (zh) * | 2021-11-11 | 2023-02-21 | 南亞科技股份有限公司 | 清洗方法 |
WO2023091299A1 (en) * | 2021-11-16 | 2023-05-25 | Lam Research Corporation | Silicon etch with organochloride |
US20240112883A1 (en) * | 2022-09-30 | 2024-04-04 | Applied Materials, Inc. | Helical voltage standoff |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6348730A (ja) * | 1986-08-13 | 1988-03-01 | Texas Instr Japan Ltd | イオン発生装置 |
JP2008518482A (ja) * | 2004-10-26 | 2008-05-29 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | イオン注入装置の構成部品を洗浄するための新規な方法 |
JP2009021066A (ja) * | 2007-07-11 | 2009-01-29 | Sharp Corp | イオンドーピング装置、イオンドーピング装置用フィラメントおよびその製造方法 |
WO2009102762A2 (en) * | 2008-02-11 | 2009-08-20 | Sweeney Joseph D | Ion source cleaning in semiconductor processing systems |
Family Cites Families (174)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3625749A (en) | 1966-04-06 | 1971-12-07 | Matsushita Electronics Corp | Method for deposition of silicon dioxide films |
DE1789021C3 (de) | 1967-09-25 | 1975-04-10 | Hitachi, Ltd., Tokio | Zenerdiode und Verfahren zu ihrer Herstellung |
JPS4820106B1 (ja) | 1968-03-08 | 1973-06-19 | ||
US3658586A (en) | 1969-04-11 | 1972-04-25 | Rca Corp | Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals |
US3725749A (en) | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
JPS5183473A (en) | 1975-01-20 | 1976-07-22 | Hitachi Ltd | Fujunbutsuno doopinguhoho |
US4128733A (en) | 1977-12-27 | 1978-12-05 | Hughes Aircraft Company | Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same |
US4369031A (en) | 1981-09-15 | 1983-01-18 | Thermco Products Corporation | Gas control system for chemical vapor deposition system |
US4498953A (en) | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
JPS60138247A (ja) | 1983-12-27 | 1985-07-22 | Diesel Kiki Co Ltd | 燃料噴射時期制御装置 |
US4619729A (en) | 1984-02-14 | 1986-10-28 | Energy Conversion Devices, Inc. | Microwave method of making semiconductor members |
JPS60138247U (ja) * | 1984-02-24 | 1985-09-12 | 日新電機株式会社 | イオン照射装置 |
US4600801A (en) | 1984-11-02 | 1986-07-15 | Sovonics Solar Systems | Fluorinated, p-doped microcrystalline silicon semiconductor alloy material |
US4718240A (en) | 1985-03-01 | 1988-01-12 | Helix Technology Corporation | Cryopump regeneration method and apparatus |
JP2651530B2 (ja) | 1988-04-15 | 1997-09-10 | 住友化学工業株式会社 | 気相成長用有機金属化合物供給装置 |
JP2813762B2 (ja) | 1990-02-23 | 1998-10-22 | 東京エレクトロン株式会社 | イオン注入装置 |
JPH04112441A (ja) | 1990-08-31 | 1992-04-14 | Toshiba Corp | イオン注入装置及びそのクリーニング方法 |
JPH04333572A (ja) | 1991-05-10 | 1992-11-20 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | 酸化物超電導体用mo原料の気化方法 |
US5565038A (en) | 1991-05-16 | 1996-10-15 | Intel Corporation | Interhalogen cleaning of process equipment |
US5716494A (en) | 1992-06-22 | 1998-02-10 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate |
US5347460A (en) | 1992-08-25 | 1994-09-13 | International Business Machines Corporation | Method and system employing optical emission spectroscopy for monitoring and controlling semiconductor fabrication |
US5370568A (en) | 1993-03-12 | 1994-12-06 | Harris Corporation | Curing of a tungsten filament in an ion implanter |
US5413670A (en) | 1993-07-08 | 1995-05-09 | Air Products And Chemicals, Inc. | Method for plasma etching or cleaning with diluted NF3 |
US5421957A (en) | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
JPH0786242A (ja) | 1993-09-10 | 1995-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2889098B2 (ja) | 1993-10-13 | 1999-05-10 | 株式会社本山製作所 | 特定ガスの供給制御装置 |
US5436180A (en) | 1994-02-28 | 1995-07-25 | Motorola, Inc. | Method for reducing base resistance in epitaxial-based bipolar transistor |
JP3593363B2 (ja) * | 1994-08-10 | 2004-11-24 | 株式会社東芝 | 半導体薄膜を具備するアクティブマトリックス型液晶表示装置の製造方法 |
US5518528A (en) | 1994-10-13 | 1996-05-21 | Advanced Technology Materials, Inc. | Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds |
US5554845A (en) | 1994-11-14 | 1996-09-10 | Santa Barbara Research Center | Method and apparatus to effectively eliminate optical interference structure in detector response |
US5497006A (en) | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
FR2727322B1 (fr) | 1994-11-30 | 1996-12-27 | Kodak Pathe | Procede pour la sublimation d'un materiau solide et dispositif pour la mise en oeuvre du procede |
JP3609131B2 (ja) | 1994-12-06 | 2005-01-12 | 株式会社半導体エネルギー研究所 | イオンドーピング装置のクリーニング方法 |
US5554854A (en) | 1995-07-17 | 1996-09-10 | Eaton Corporation | In situ removal of contaminants from the interior surfaces of an ion beam implanter |
US5633506A (en) | 1995-07-17 | 1997-05-27 | Eaton Corporation | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
US6194628B1 (en) * | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Method and apparatus for cleaning a vacuum line in a CVD system |
US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
US5977552A (en) | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
JPH09298166A (ja) | 1996-05-09 | 1997-11-18 | Hitachi Ltd | 半導体製造方法および装置 |
JP3077591B2 (ja) | 1996-06-20 | 2000-08-14 | 日本電気株式会社 | Cvd装置及びcvd成膜方法 |
US5988187A (en) | 1996-07-09 | 1999-11-23 | Lam Research Corporation | Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports |
US6080297A (en) | 1996-12-06 | 2000-06-27 | Electron Transfer Technologies, Inc. | Method and apparatus for constant composition delivery of hydride gases for semiconductor processing |
US6322756B1 (en) | 1996-12-31 | 2001-11-27 | Advanced Technology And Materials, Inc. | Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases |
US6224785B1 (en) | 1997-08-29 | 2001-05-01 | Advanced Technology Materials, Inc. | Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates |
US5834371A (en) | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
US5993685A (en) | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
AU7147798A (en) | 1997-04-23 | 1998-11-13 | Advanced Chemical Systems International, Inc. | Planarization compositions for cmp of interlayer dielectrics |
US5940724A (en) | 1997-04-30 | 1999-08-17 | International Business Machines Corporation | Method for extended ion implanter source lifetime |
US5943594A (en) * | 1997-04-30 | 1999-08-24 | International Business Machines Corporation | Method for extended ion implanter source lifetime with control mechanism |
GB9709659D0 (en) | 1997-05-13 | 1997-07-02 | Surface Tech Sys Ltd | Method and apparatus for etching a workpiece |
US5851270A (en) | 1997-05-20 | 1998-12-22 | Advanced Technology Materials, Inc. | Low pressure gas source and dispensing apparatus with enhanced diffusive/extractive means |
US6534007B1 (en) | 1997-08-01 | 2003-03-18 | Applied Komatsu Technology, Inc. | Method and apparatus for detecting the endpoint of a chamber cleaning |
US6379575B1 (en) | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6018065A (en) | 1997-11-10 | 2000-01-25 | Advanced Technology Materials, Inc. | Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor |
US6143191A (en) | 1997-11-10 | 2000-11-07 | Advanced Technology Materials, Inc. | Method for etch fabrication of iridium-based electrode structures |
US6846424B2 (en) | 1997-11-10 | 2005-01-25 | Advanced Technology Materials, Inc. | Plasma-assisted dry etching of noble metal-based materials |
TW444270B (en) | 1997-11-12 | 2001-07-01 | Nippon Kogaku Kk | Exposure apparatus, apparatus for fabricating device and fabricating method of exposure apparatus |
US6136211A (en) | 1997-11-12 | 2000-10-24 | Applied Materials, Inc. | Self-cleaning etch process |
JP3099819B2 (ja) | 1997-11-28 | 2000-10-16 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
TW466266B (en) | 1997-12-18 | 2001-12-01 | Central Glass Co Ltd | Gas for removing deposit and removal method using same |
US6194038B1 (en) | 1998-03-20 | 2001-02-27 | Applied Materials, Inc. | Method for deposition of a conformal layer on a substrate |
US6135128A (en) | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
US6620256B1 (en) | 1998-04-28 | 2003-09-16 | Advanced Technology Materials, Inc. | Non-plasma in-situ cleaning of processing chambers using static flow methods |
US6101816A (en) | 1998-04-28 | 2000-08-15 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system |
JPH11317174A (ja) * | 1998-04-30 | 1999-11-16 | Sozo Kagaku:Kk | ガスによるイオン源絶縁フランジのクリーニング方法とクリーニング機構 |
KR20010025043A (ko) | 1998-05-18 | 2001-03-26 | 바누치 유진 지. | 반도체 기판용 스트립팅 조성물 |
US6355933B1 (en) | 1999-01-13 | 2002-03-12 | Advanced Micro Devices, Inc. | Ion source and method for using same |
JP3836991B2 (ja) | 1999-02-02 | 2006-10-25 | 三菱化学株式会社 | 製膜方法および磁気記録媒体の製造方法 |
US6756600B2 (en) | 1999-02-19 | 2004-06-29 | Advanced Micro Devices, Inc. | Ion implantation with improved ion source life expectancy |
US6346452B1 (en) | 1999-05-03 | 2002-02-12 | National Semiconductor Corporation | Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers |
JP2000350970A (ja) | 1999-05-10 | 2000-12-19 | Eaton Corp | イオン注入装置における汚染された表面を洗浄するための方法および装置 |
US6259105B1 (en) | 1999-05-10 | 2001-07-10 | Axcelis Technologies, Inc. | System and method for cleaning silicon-coated surfaces in an ion implanter |
US6221169B1 (en) | 1999-05-10 | 2001-04-24 | Axcelis Technologies, Inc. | System and method for cleaning contaminated surfaces in an ion implanter |
JP4182535B2 (ja) | 1999-05-27 | 2008-11-19 | 株式会社Ihi | セルフクリ−ニングイオンドーピング装置およびその方法 |
US6344432B1 (en) | 1999-08-20 | 2002-02-05 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
US6290864B1 (en) | 1999-10-26 | 2001-09-18 | Reflectivity, Inc. | Fluoride gas etching of silicon with improved selectivity |
JP3732697B2 (ja) | 1999-12-09 | 2006-01-05 | 住友イートンノバ株式会社 | イオン注入装置及びイオンビームラインのクリーニング方法 |
US6772781B2 (en) | 2000-02-04 | 2004-08-10 | Air Liquide America, L.P. | Apparatus and method for mixing gases |
DE10011274A1 (de) | 2000-03-08 | 2001-09-13 | Wolff Walsrode Ag | Plasmabehandelte bahnförmige Werkstoffe |
US20030010354A1 (en) | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
AU2001247685A1 (en) | 2000-03-30 | 2001-10-15 | Tokyo Electron Limited | Method of and apparatus for tunable gas injection in a plasma processing system |
US6537606B2 (en) | 2000-07-10 | 2003-03-25 | Epion Corporation | System and method for improving thin films by gas cluster ion beam processing |
JP2002057149A (ja) | 2000-08-08 | 2002-02-22 | Tokyo Electron Ltd | 処理装置及びそのクリーニング方法 |
US6893907B2 (en) | 2002-06-05 | 2005-05-17 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
US7288491B2 (en) | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US7037813B2 (en) | 2000-08-11 | 2006-05-02 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage |
US6887337B2 (en) | 2000-09-19 | 2005-05-03 | Xactix, Inc. | Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto |
JP2002110611A (ja) | 2000-10-04 | 2002-04-12 | Texas Instr Japan Ltd | 半導体ウェハの洗浄方法及び装置 |
US6333272B1 (en) | 2000-10-06 | 2001-12-25 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
JP3891773B2 (ja) * | 2000-10-20 | 2007-03-14 | 大陽日酸株式会社 | ガスの分離精製方法及びその装置 |
US6559462B1 (en) | 2000-10-31 | 2003-05-06 | International Business Machines Corporation | Method to reduce downtime while implanting GeF4 |
US6566315B2 (en) | 2000-12-08 | 2003-05-20 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
AU2001218942A1 (en) | 2000-12-18 | 2002-07-01 | Sumitomo Precision Products Co., Ltd. | Cleaning method and etching method |
US6843258B2 (en) | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
TW536739B (en) * | 2001-01-09 | 2003-06-11 | Applied Materials Inc | Apparatus for exhaust white powder elimination in substrate processing |
JP4014913B2 (ja) | 2001-04-13 | 2007-11-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6627587B2 (en) | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
JP2002313776A (ja) | 2001-04-19 | 2002-10-25 | Toshiba Corp | ドライエッチング方法及びドライエッチング装置 |
US6529424B2 (en) | 2001-05-17 | 2003-03-04 | Koninklijke Philips Electronics N.V. | Propagation delay independent SDRAM data capture device and method |
JP3824058B2 (ja) | 2001-05-23 | 2006-09-20 | 独立行政法人産業技術総合研究所 | カルボランスーパークラスターおよびその製造方法 |
US6685803B2 (en) | 2001-06-22 | 2004-02-03 | Applied Materials, Inc. | Plasma treatment of processing gases |
US6835414B2 (en) | 2001-07-27 | 2004-12-28 | Unaxis Balzers Aktiengesellschaft | Method for producing coated substrates |
JP3987312B2 (ja) | 2001-08-31 | 2007-10-10 | 株式会社東芝 | 半導体装置の製造装置および製造方法ならびに半導体製造装置のクリーニング方法 |
US6718126B2 (en) | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US20030098038A1 (en) | 2001-11-26 | 2003-05-29 | Siegele Stephen H. | System and method for on-site generation and distribution of fluorine for fabrication processes |
JP3891834B2 (ja) * | 2001-12-04 | 2007-03-14 | 大陽日酸株式会社 | ガス供給方法及び装置 |
US6620225B2 (en) | 2002-01-10 | 2003-09-16 | Advanced Technology Materials, Inc. | Adsorbents for low vapor pressure fluid storage and delivery |
JP2003272554A (ja) | 2002-03-15 | 2003-09-26 | Seiko Epson Corp | イオン注入装置及びその稼動制御方法 |
JP2003297280A (ja) | 2002-03-29 | 2003-10-17 | Toshiba Corp | イオン注入装置 |
US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US6902629B2 (en) | 2002-04-12 | 2005-06-07 | Applied Materials, Inc. | Method for cleaning a process chamber |
US6617175B1 (en) | 2002-05-08 | 2003-09-09 | Advanced Technology Materials, Inc. | Infrared thermopile detector system for semiconductor process monitoring and control |
TWI271443B (en) | 2002-06-17 | 2007-01-21 | Asm Int | Method of producing vapor from solid precursor and substrate processing system using the same |
KR100788472B1 (ko) | 2002-06-26 | 2007-12-24 | 세미이큅, 인코포레이티드 | 이온 소스용 증기 소스 |
US20040006249A1 (en) | 2002-07-08 | 2004-01-08 | Showa Denko K.K., Nikon Corporation | Fluorination treatment apparatus, process for producing fluorination treated substance, and fluorination treated substance |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US7300038B2 (en) | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US7192486B2 (en) | 2002-08-15 | 2007-03-20 | Applied Materials, Inc. | Clog-resistant gas delivery system |
US6767836B2 (en) | 2002-09-04 | 2004-07-27 | Asm Japan K.K. | Method of cleaning a CVD reaction chamber using an active oxygen species |
US6841141B2 (en) | 2002-09-26 | 2005-01-11 | Advanced Technology Materials, Inc. | System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers |
US7296458B2 (en) | 2002-10-17 | 2007-11-20 | Advanced Technology Materials, Inc | Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same |
US20040163445A1 (en) | 2002-10-17 | 2004-08-26 | Dimeo Frank | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US7080545B2 (en) | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US7228724B2 (en) | 2002-10-17 | 2007-06-12 | Advanced Technology Materials, Inc. | Apparatus and process for sensing target gas species in semiconductor processing systems |
US6818566B2 (en) | 2002-10-18 | 2004-11-16 | The Boc Group, Inc. | Thermal activation of fluorine for use in a semiconductor chamber |
US6812648B2 (en) | 2002-10-21 | 2004-11-02 | Guardian Industries Corp. | Method of cleaning ion source, and corresponding apparatus/system |
US6908846B2 (en) | 2002-10-24 | 2005-06-21 | Lam Research Corporation | Method and apparatus for detecting endpoint during plasma etching of thin films |
KR100505065B1 (ko) | 2002-12-26 | 2005-07-29 | 삼성전자주식회사 | 증착 챔버 세정 방법 및 인시튜 세정이 가능한 증착 장치 |
US7037376B2 (en) | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
US7098143B2 (en) | 2003-04-25 | 2006-08-29 | Texas Instruments Incorporated | Etching method using an at least semi-solid media |
US6936505B2 (en) | 2003-05-20 | 2005-08-30 | Intel Corporation | Method of forming a shallow junction |
JP4374487B2 (ja) * | 2003-06-06 | 2009-12-02 | 株式会社Sen | イオン源装置およびそのクリーニング最適化方法 |
WO2005028871A1 (en) * | 2003-09-23 | 2005-03-31 | The Boc Group Plc | Cleaning method of a rotary piston vacuum pump |
US20080223409A1 (en) | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
JP4643588B2 (ja) * | 2003-12-12 | 2011-03-02 | セメクイップ, インコーポレイテッド | 固体から昇華した蒸気の流れの制御 |
US7791047B2 (en) | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
TWI375660B (en) | 2004-01-22 | 2012-11-01 | Semequip Inc | Isotopically-enriched boranes and methods of preparing them |
US7015108B2 (en) | 2004-02-26 | 2006-03-21 | Intel Corporation | Implanting carbon to form P-type drain extensions |
GB2412488B (en) | 2004-03-26 | 2007-03-28 | Applied Materials Inc | Ion sources |
US20050252529A1 (en) | 2004-05-12 | 2005-11-17 | Ridgeway Robert G | Low temperature CVD chamber cleaning using dilute NF3 |
US20050260354A1 (en) | 2004-05-20 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | In-situ process chamber preparation methods for plasma ion implantation systems |
US20060005856A1 (en) | 2004-06-29 | 2006-01-12 | Applied Materials, Inc. | Reduction of reactive gas attack on substrate heater |
GB0415560D0 (en) * | 2004-07-12 | 2004-08-11 | Boc Group Plc | Pump cleaning |
US8058156B2 (en) | 2004-07-20 | 2011-11-15 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having multiple ion shower grids |
DE102004051635A1 (de) | 2004-10-23 | 2006-05-18 | Man Roland Druckmaschinen Ag | Verfahren zur Schnittregistereinstellung bei einer Rollenrotationsdruckmaschine |
US7955797B2 (en) | 2004-10-25 | 2011-06-07 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel |
US7459704B2 (en) | 2004-11-12 | 2008-12-02 | Varian Semiconductor Equipment Associates, Inc. | Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms |
US20060115590A1 (en) | 2004-11-29 | 2006-06-01 | Tokyo Electron Limited; International Business Machines Corporation | Method and system for performing in-situ cleaning of a deposition system |
US7438079B2 (en) | 2005-02-04 | 2008-10-21 | Air Products And Chemicals, Inc. | In-line gas purity monitoring and control system |
WO2006101767A2 (en) | 2005-03-16 | 2006-09-28 | Advanced Technology Materials, Inc. | System for delivery of reagents from solid sources thereof |
KR100706792B1 (ko) * | 2005-08-01 | 2007-04-12 | 삼성전자주식회사 | 펌프 유닛을 가지는 반도체 소자 제조 장치 및 상기 펌프유닛을 세정하는 방법 |
US7491947B2 (en) * | 2005-08-17 | 2009-02-17 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving performance and extending lifetime of indirectly heated cathode ion source |
US20100112795A1 (en) | 2005-08-30 | 2010-05-06 | Advanced Technology Materials, Inc. | Method of forming ultra-shallow junctions for semiconductor devices |
US20080220596A1 (en) | 2005-08-30 | 2008-09-11 | Advanced Technology Materials, Inc. | Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source |
SG2014011944A (en) | 2005-08-30 | 2014-08-28 | Advanced Tech Materials | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
US20070117396A1 (en) | 2005-11-22 | 2007-05-24 | Dingjun Wu | Selective etching of titanium nitride with xenon difluoride |
US8278222B2 (en) | 2005-11-22 | 2012-10-02 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
US7666771B2 (en) | 2005-12-09 | 2010-02-23 | Semequip, Inc. | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
JP2007190448A (ja) * | 2006-01-17 | 2007-08-02 | Taiyo Nippon Sanso Corp | 混合ガス製造装置及び方法 |
CN102747336A (zh) | 2006-04-26 | 2012-10-24 | 高级技术材料公司 | 半导体加工系统的清洁方法和装置 |
US20070259111A1 (en) | 2006-05-05 | 2007-11-08 | Singh Kaushal K | Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film |
US8013312B2 (en) | 2006-11-22 | 2011-09-06 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
US7853364B2 (en) | 2006-11-30 | 2010-12-14 | Veeco Instruments, Inc. | Adaptive controller for ion source |
US7919402B2 (en) | 2006-12-06 | 2011-04-05 | Semequip, Inc. | Cluster ion implantation for defect engineering |
US20080142039A1 (en) | 2006-12-13 | 2008-06-19 | Advanced Technology Materials, Inc. | Removal of nitride deposits |
TW200839829A (en) | 2007-03-21 | 2008-10-01 | Advanced Micro Fab Equip Inc | Capacitance-coupled plasma chamber, structure and manufacturing method of gas distribution head, refurbishment and reuse method thereof |
US8021492B2 (en) * | 2007-05-29 | 2011-09-20 | United Microelectronics Corp. | Method of cleaning turbo pump and chamber/turbo pump clean process |
US20080305598A1 (en) | 2007-06-07 | 2008-12-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species |
US7947582B2 (en) | 2009-02-27 | 2011-05-24 | Tel Epion Inc. | Material infusion in a trap layer structure using gas cluster ion beam processing |
US9627180B2 (en) | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
US8237136B2 (en) | 2009-10-08 | 2012-08-07 | Tel Epion Inc. | Method and system for tilting a substrate during gas cluster ion beam processing |
US8187971B2 (en) | 2009-11-16 | 2012-05-29 | Tel Epion Inc. | Method to alter silicide properties using GCIB treatment |
JP5714831B2 (ja) | 2010-03-18 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2009
- 2009-02-11 SG SG2013010889A patent/SG188150A1/en unknown
- 2009-02-11 TW TW098104345A patent/TWI494975B/zh not_active IP Right Cessation
- 2009-02-11 TW TW104114198A patent/TWI573179B/zh active
- 2009-02-11 KR KR1020157026700A patent/KR101755970B1/ko active IP Right Grant
- 2009-02-11 KR KR1020167030195A patent/KR101822779B1/ko active IP Right Grant
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-
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-
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- 2014-10-29 JP JP2014220215A patent/JP6208109B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6348730A (ja) * | 1986-08-13 | 1988-03-01 | Texas Instr Japan Ltd | イオン発生装置 |
JP2008518482A (ja) * | 2004-10-26 | 2008-05-29 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | イオン注入装置の構成部品を洗浄するための新規な方法 |
JP2009021066A (ja) * | 2007-07-11 | 2009-01-29 | Sharp Corp | イオンドーピング装置、イオンドーピング装置用フィラメントおよびその製造方法 |
WO2009102762A2 (en) * | 2008-02-11 | 2009-08-20 | Sweeney Joseph D | Ion source cleaning in semiconductor processing systems |
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KR20140114735A (ko) * | 2013-03-19 | 2014-09-29 | 가부시키가이샤 에스이엔 | 이온주입장치 및 이온주입장치의 클리닝방법 |
JP2014182919A (ja) * | 2013-03-19 | 2014-09-29 | Sen Corp | イオン注入装置およびイオン注入装置のクリーニング方法 |
US10030304B2 (en) | 2013-03-19 | 2018-07-24 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Ion implantation apparatus and method of cleaning ion implantation apparatus |
KR102020684B1 (ko) | 2013-03-19 | 2019-09-10 | 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 | 이온주입장치 및 이온주입장치의 클리닝방법 |
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WO2009102762A2 (en) | 2009-08-20 |
KR20110005683A (ko) | 2011-01-18 |
EP2248153A4 (en) | 2012-01-18 |
CN101981661A (zh) | 2011-02-23 |
KR101822779B1 (ko) | 2018-01-26 |
JP2015026623A (ja) | 2015-02-05 |
TW201724209A (zh) | 2017-07-01 |
WO2009102762A3 (en) | 2009-11-12 |
KR20150115960A (ko) | 2015-10-14 |
JP6208109B2 (ja) | 2017-10-04 |
SG188150A1 (en) | 2013-03-28 |
TWI573179B (zh) | 2017-03-01 |
KR101755970B1 (ko) | 2017-07-07 |
US9991095B2 (en) | 2018-06-05 |
EP2248153A2 (en) | 2010-11-10 |
KR20160128462A (ko) | 2016-11-07 |
US20120058252A1 (en) | 2012-03-08 |
JP2011512015A (ja) | 2011-04-14 |
EP2248153B1 (en) | 2016-09-21 |
JP5686423B2 (ja) | 2015-03-18 |
JP5433025B2 (ja) | 2014-03-05 |
TWI494975B (zh) | 2015-08-01 |
TW201530624A (zh) | 2015-08-01 |
TWI619153B (zh) | 2018-03-21 |
JP2014089968A (ja) | 2014-05-15 |
US20110259366A1 (en) | 2011-10-27 |
TW201005806A (en) | 2010-02-01 |
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