TW536739B - Apparatus for exhaust white powder elimination in substrate processing - Google Patents

Abstract

Provided herein is a substrate processing system for semiconductor manufacturing. Such system comprises a process chamber; and exhaust system; and a means to provide cleaning gas. The exhaust system comprises a vacuum pump, a vacuum exhaust line, and a filtering apparatus installed downstream from the vacuum pump and within the vacuum exhaust line. Also provided is a method for eliminating or reducing solid residue accumulation in an exhaust line by introducing cleaning gas to the process chamber and further to the exhaust line; trapping solid residue by a filtering apparatus downstream from vacuum pump and within the exhaust line; heating the filtering apparatus to re-activate the cleaning gas, which reacts with trapped solid residue and convert it to gaseous residue; and releasing the gaseous residue through the exhaust line. In-situ or remote plasma resource cleaning may be employed in conjunction with the above method.

Description

536739 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention () Field of the Invention: The present invention summarizes the field of substrate processing. More specifically, the present invention relates to an apparatus and / or method for removing solid residues (ie, white powder), wherein the solid residues are accumulated in the exhaust line of a vacuum pump during substrate processing . BACKGROUND OF THE INVENTION: In a typical substrate processing process, a deposition gas in a processing chamber forms a thin film layer on the surface of the substrate being processed. During the deposition process, any remaining active chemical species and derivatives are pumped out of the processing chamber via a vacuum pump. The vacuum line is often referred to as the front line. The incompletely consumed gas molecules are taken out of the processing chamber through the front line along with a part of the reacted compounds and reaction organisms, and enter the vacuum exhaust line through the exhaust line. The effluent from the exhaust line is then subjected to environmental discharge 'or further processed using, for example, a scrubber, and then discharged. Many compounds in the exhausted gas are still in a highly reactive state and / or contain residues or particulate matter, and these substances will form excess deposits in the exhaust line. Accumulated powder residue can cause serious problems. For example, when there is enough residue accumulated in the exhaust line, the exhaust line will be blocked. Even if it is cleaned regularly, the accumulated and accumulated residues in the exhaust line will still hinder the normal operation of the vacuum pump, and will shorten the service life of the vacuum pump significantly. Page 5 This paper size applies to China National Standard (CNS) A4 (210X 297 mm) ii-! ...... ί (Please read the precautions on the back before (Fill in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536739 A 7 ______ B7 V. Description of Invention () Therefore, we must often perform maintenance, repair or replacement work on vacuum pumps. Over time, repairs and replacements of vacuum pumps can become very expensive and increase the cost of owning the equipment. Therefore, the exhaust line usually needs to be cleaned at a certain time and depends on the type and number of deposition processes. When cleaning is performed, the substrate processing system must be removed from the production line; this is very expensive in terms of lost throughput. In an attempt to avoid the above problems, the internal surface of the front pipeline is often cleaned 'in order to remove already deposited material. This procedure is performed during a standard chamber cleaning process; during this process, excess deposits on the walls and other parts of the chamber are removed. Common chamber cleaning techniques include the use of an etching gas, such as fluoride or chloride, to remove deposits from the walls and other parts of the chamber. In this type of cleaning procedure, the etching gas is introduced into the chamber, and a plasma is formed at the same time, so that the etching gas and the deposition material react to remove the deposition material on the wall of the chamber. These cleaning procedures are usually performed between each deposition step of each substrate or every N substrates. Since the plasma system is established in the vicinity of the deposited material in the chamber, it is easy to remove the deposited material on the wall surface of the chamber. There is no serious problem when removing the deposits in the front line, because the semiconductor process is performed at high temperature. However, 'removing sediment from the exhaust line has proven to be very difficult' because the exhaust line is located downstream of the vacuum pump. Therefore, after a period of time, although the chamber and the front pipeline may have been sufficiently cleaned up, residues and similar deposits will still remain in the exhaust pipeline. Page 6 This paper applies Chinese National Standard (CNS) A4 specifications. (2i0x297 public love) 丨 —..................... Order ... :: Γ (Please read the precautions on the back before filling this page) 536739 A7 B7 V. Description of the invention () Internal 0 In the conventional technology, the attempt to sufficiently clean the exhaust pipeline includes extending the cleaning operation. However, the extended cleaning operation did not meet our needs because it would have a negative impact on substrate yield. Furthermore, such residual products can only be cleaned to a certain extent, that is, the reactants originating from the cleaning step will be discharged into the exhaust line, and in this case, these reactants may Residues in the gas line react. In some systems and applications, the exhausted reactants are not enough to reach the exhaust line, thus forming more residual products than expected.

Raoux ψ Λ {Plasma Source Sci, TechnoL, 6: 405-414, 1997) introduces a plasma cleaning equipment (dpa) trap, which is installed in the front pipeline connecting the processing chamber and the vacuum pump. This trap uses electrostatic potential to collect particles and removes the particles with a plasma inside the trap. Other attempts to remove excess deposits include heating the entire exhaust line to a previously set temperature. Unfortunately, heating to high temperatures has several disadvantages. For example, combustion can form very fine powders that can block the system. In addition, particles are usually collected by water washing treatment, and the washing water itself must be treated before disposal to remove particles and water-soluble pollutants. Therefore, the conventional technology lacks an effective device for removing or reducing pollution and residues (white powder) in an exhaust line connected downstream of a vacuum pump. The invention can meet the long-standing needs of the conventional technology. Page 7 This paper size applies Chinese National Standard (CNS) A4 Regulations 10 × 297 Public Love) (Please read the precautions on the back before writing this page) ¥ Order Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperative 536739 Economy Printed by the Intellectual Property Bureau employee consumer cooperative A7 B7 V. Description of the invention () Summary and summary of the invention 5 'The present invention is to provide a system to reduce solid residues deposited in the exhaust pipeline of the vacuum pump and method. One embodiment of the present invention provides a substrate processing system for substrate manufacturing. Such a system includes at least a processing chamber; an exhaust system; and means for supplying a cleaning gas to the processing chamber. The aforementioned exhaust system includes at least a vacuum pump; a vacuum exhaust line; and a filtering device installed downstream of the vacuum pump and located within the vacuum pump exhaust pipe line. Another embodiment of the present invention provides a method for removing or reducing solid residues accumulated in an exhaust line of a substrate processing system. This method includes at least the following steps: (1) introducing at least one cleaning gas into a processing chamber and further flowing into the exhaust line; (2) trapping solid residues generated during the processing of the substrate, wherein the residues are It is intercepted or filtered by a filtering device located downstream of the vacuum pump and in the exhaust line; (3) heating the filtering device, in which the cleaning gas is activated again and further interacts with the trapped solid residue Generate a reaction to transform the solid residues into gaseous residues; and (4) discharge the gaseous residues through the exhaust line, thereby substantially removing or reducing solid residues accumulated in the exhaust line. In another aspect, an embodiment of the present invention also provides a method for removing or reducing solid residue accumulated in an exhaust line of a substrate processing system. The method includes at least the following steps: (1) at least A precursor gas is introduced into the processing chamber of the substrate processing system, and further flows into the exhaust pipe. Page 8 This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling (This page)

536739 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () line; (2) Applying a plasma to the precursor gas at the proximal end, wherein the plasma activates the precursor gas to form a cleaning gas Plasma of the cleaning gas further flows into the exhaust line; (3) traps solid residues generated during substrate processing, wherein the residues are located downstream of the vacuum pump and the The filtering equipment in the exhaust line is trapped or filtered; (4) the filtering equipment is heated, in which the cleaning gas is activated again, and further reacts with the trapped solid residues, thereby transforming the solid residues Gaseous residues; and (5) the gaseous residues are discharged through the exhaust line, thereby substantially removing solid residues accumulated in the exhaust line ^ In another aspect, embodiments of the present invention are Provided is a method for removing or reducing solid residue accumulated in an exhaust line of a substrate processing system. The method includes at least the following steps: (1) at least The precursor gas is introduced into a remote chamber, wherein the remote chamber is connected to the interior of the processing chamber of the substrate processing system; (2) the precursor gas in the remote chamber is activated to form a gas for cleaning gas; (3) the plasma of the cleaning gas is introduced into the processing chamber, wherein the plasma of the cleaning gas further flows into the exhaust line; (4) the solid residue generated during the processing of the substrate is intercepted, of which The residue is trapped or filtered by a filtering device located downstream of the vacuum pump and in the exhaust line; (5) heating the filtering device, wherein the cleaning gas is activated again, and further with the trapped solid state The residue reacts to convert the solid residues into gaseous residues; and (6) the gaseous residues are discharged through the exhaust line, thereby substantially removing the solid residues accumulated in the exhaust line. Page 9 This paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) C Please read the precautions on the back before filling in this page) [Binding · Binding · 536739 A7 B7 Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printing 5. Description of the invention () 'Other further aspects, features, and advantages of the present invention will be apparent from the detailed description of the embodiments disclosed below. gjL is simple-description:-The features, advantages, and objects of the present invention described above can be demonstrated with reference to specific embodiments and the drawings. These drawings are part of this specification. It should be noted, however, that the drawings are only used to illustrate embodiments of the present invention, and should not be construed as limiting the scope of the present invention. FIG. 1 is a schematic diagram of a filtering device 100 according to an embodiment of the present invention. The device 100 includes a heater 101, a CAP white particle filter 102, a "0" ring 103, a wire tube 104, a filter disk 105, and a spacer 1060. The second figure illustrates one aspect of the present invention. kind. Fig. 2 shows that the cleaning gas 300 is introduced into the processing chamber 200 and is further guided to the filtering apparatus 100 of the present invention. More specifically, the processing chamber 200 has a resistive heating crystal base 210 supporting a substrate 220, a shielding frame 240 for protecting an edge of the substrate 220, and a shower head 230 parallel to and above the crystal base 21, and connected A front line 250 that is discharged from the processing chamber 200. The cleaning gas 300 is introduced through the shower head 230, and is then discharged from the processing chamber 200 to the front line 250. The pump 260 downstream of the front line 250 sucks the exhaust gas to the downstream exhaust line • The filtering equipment 100 in the gas line 270. Fig. 3 illustrates another aspect of the present invention; that is, a remote plasma source 280 is applied to the filtering apparatus 100 of the present invention. More precisely page 10 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) ......... 0 ........., order ... ....: ^ · {Please read the precautions on the back before writing this page j 536739 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () The equipment is to prevent such particulate matter from being exhausted. Accumulated in the pipeline. This filtering equipment is positioned downstream of the vacuum pump in the exhaust line. This type of equipment 部分 connects or partially replaces the exhaust output line located downstream of the vacuum pump. Gases containing solid residues and exhausted from the processing chamber then pass through the filtering equipment, while solid residues are trapped in the filtering equipment. After heating, the trapped solid residues are removed by the cleaning gas flowing into the filtering equipment during the chamber cleaning process. Two or more filtration devices can be connected to the exhaust outlet line. For example, this architecture can use two optimized filtering devices to collect particles to further avoid the accumulation of particles and residues in the exhaust line. The device of the present invention can be used in combination with any substrate treatment method that generates harmful derivatives, such as a flat panel display (FPD) process, a chemical vapor deposition process—such as a plasma-excited chemical vapor deposition process (ie, a pECVD process), an etching process Or heat treatment. Therefore, as described above, one aspect of the present invention is a substrate processing system for semiconductor manufacturing. Such a system includes at least a processing chamber; an exhaust system; and a device for supplying a cleaning gas to the processing chamber. The aforementioned exhaust system includes at least a vacuum pump; a vacuum exhaust line; and a filtering device 'which is installed downstream of the true pump and located in the vacuum pump exhaust line. The aforementioned filtering equipment traps solid residues. When the temperature rises, the trapped solid residue is removed by the cleaning gas flowing into the exhaust line, so it can reduce or avoid the accumulation of solid residue in the vacuum exhaust line. ....... MW ......... Order ......... line · (Please read the notes on the back before filling in this page)

536739 A7 B7 Member of the Intellectual Property Bureau of the Ministry of Economy X Printed by Consumer Cooperatives V. Invention Description (To be precise, the filtering device of the present invention is a closed system that includes at least one or more filter disks, a heater, and an enclosure The duct filter plate of the heater is a gold seal disposed on the wall surface of the aforementioned closed system and the interior of the duct of the heater duct. To be more precise, the tray has enough holes J and Xiao b to trap solid residues. For example, the size of the perforation holes of the filter disk is about 10 to 30 microns. If multiple filter disks are used, the filter disks are arranged in a way that the filter disks with larger filter holes are arranged in smaller filter holes. Upstream of the filter disc. More precisely, the processing chamber may be a flat display (FPD) chamber or a semiconductor processing chamber (such as a PECVD chamber or an etching process chamber). The representative of the solid residue filtered by the filtering device of the present invention Examples include: siN, SiO, a-Si, (NH4) 2SiF6, NH4F and their adsorbents, such as siH4, NH3 and HF. The aforementioned cleaning gas may be a fluorine-containing gas, a chlorine-containing gas Or pixel-containing gas. Representative examples of fluorine-containing gas include Hf, f2, NF3, SF6, C2F6, CF4, C3F80, and CxFy. In another aspect, it provides a method for removing or reducing substrate processing systems. Method for accumulating solid residues in an exhaust line. This method includes at least the following steps: (1) introducing at least one cleaning gas into a processing chamber and further flowing into the exhaust line; (2) during the process of retaining the substrate The solid residue produced, wherein the residue is retained or filtered by a filtering device located downstream of the vacuum pump and in the exhaust line; (3) heating the filtering device, wherein the cleaning gas Activated again, and further react with the trapped solid residues, so that the solid residues are converted into gaseous residues; and (4) the page 13 is discharged through the exhaust line ... .......... 0 ......... # ......... (Please read the notes on the back before filling this page) 536739

V. Description of the invention (Gaseous residue, Iβ, + so reduce y or roughly clear the solid residue accumulated in the exhaust pipeline. (Please read the precautions on the back before writing this page.) Exactly I, the aforementioned heating The equipment is heated to 100 ° C to 25 ° C. The treatment process can be a flat display (FpD) chamber, a chemical vapor deposition (CVD) chamber, an etching process chamber or a heat treatment chamber. The filtering device of the present invention Representative examples of the filtered solid residues include: SiN, SiO, a-Si, (NH4) 2SiF6, NH4F and their adsorbents—such as SiH4, NH3, and HF. The aforementioned cleaning gas may be a fluorine-containing gas, chlorine Gas or gas containing 1¾. Representative examples of gas containing gas include HF, F2, NF3, SF6, c2F6, cf4, c3f80, and CxFy. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Line Economy is printed in another of this invention In one aspect, it provides a method for removing or reducing solid residues accumulated in the exhaust line of a substrate processing system. The Havan method includes at least the following steps: (1) introducing at least one precursor gas into the substrate Material processing system processing room, And further flows into the exhaust line; (2) applying a plasma to the precursor gas at the proximal end, wherein the plasma activates the precursor gas to form a plasma of a cleaning gas, and the plasma of the cleaning gas further flows into the Exhaust lines; (3) Retaining solid residues generated during substrate treatment, where the residues are retained or filtered by a filtering device located downstream of the vacuum pump and in the exhaust line; (4) heating the filtering equipment, wherein the cleaning gas is activated again, and further reacts with the trapped solid residues, thereby transforming the solid residues into gaseous residues; and (5) passing through the exhaust The gas line discharges these gaseous residues, so the solid residues accumulated in the exhaust line are roughly removed. Page 14 This paper size applies to China National Standard (CNS) A4 (210X297 public) 536739 A7

Specifically, the aforementioned heating equipment is heated to 100t to 250t. The aforementioned processing chamber may be a flat display (FPD) chamber, a CVD chamber, an etching process chamber, or a heat treatment chamber. Representative examples of solid residues considered by the device of the present invention include: SiN, si0, ^ Si, (Hall 4) 2 ^, NΗ4ρ and its adsorbent, muscle, leg 3, and HF. The aforementioned cleaning gas may be a fluorine-containing gas, a gas-containing gas, or a gas containing elements. Representative examples of fluorine-containing gases include HF, f2, NF3, SF6, C2F6, CF4, "M, and ay. In another aspect, it provides a method for removing or reducing the inside of an exhaust line of a substrate processing system. A method for accumulating solid residues. The method includes at least the following steps: (1) introducing at least one precursor gas into a remote chamber, wherein the remote chamber is connected to the interior of the processing chamber of the substrate processing system; (2) activating the precursor gas in the remote chamber to form a plasma of the cleaning gas; (3) introducing the plasma of the cleaning gas into the processing chamber, wherein the plasma of the cleaning gas further flows into the row Gas lines; (4) trapping solid residues generated during substrate processing, where the residues are retained or filtered by a filtering device located downstream of the pump and in the exhaust line; (5) ) Heating the filtering device, wherein the cleaning gas is activated again, and further reacts with the trapped solid residues, thereby transforming the solid residues into gaseous residues; and (6) passing through the exhaust The gas line discharges these gaseous residues, thereby roughly removing the solid residues accumulated in the exhaust line. To be precise, the aforementioned heating equipment is heated to 100 ° C to 250 ° c. The aforementioned processing chamber may be a flat display (FPD) chamber, CVD chamber, etching process chamber or heat treatment chamber. Solid residues filtered by the filtering device of the present invention page 15 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) ... ....... #-. < Please read the notes on the back before writing this page) Order · Printed by the Consumers Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 536739

Representative examples of printed products from the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs include: SiN, Si0, U_ &, (NH ^ 2SiF6, nh # f 2 and their adsorbents, such as SiH4, NH3, and HF. The aforementioned cleaning gas can be It is a fluorine-containing gas, a chlorine-containing gas, or a tooth-containing gas. Representative examples of the fluorine-containing gas include HF, F2, NF3, SF6, C2F6, CF4, C3F80, and CxFy. The following examples are to illustrate various implementations of the present invention Examples, which are not intended to limit the scope of the present invention in any way. Examples include a white powder Qingqin. The present invention (filtration equipment (herein referred to as a white powder remover or destroyer) 1 00 series installation The exhaust output line of the vacuum pump is further connected to a flat panel display (FPD) processing room or a semiconductor process system. Please refer to Figure 1. The filtering equipment 100 is a closed system, which is connected by the first connection. The port is connected to the upstream vacuum pump, and is connected to the exhaust system by the second port. The aforementioned equipment includes at least a heater 10, a CAP white particle filter 1 0 2, 0, a "ring 1 03", a wire tube 1 〇4, filter plate 〇5 and Spacer 1 06. The heater 101 is sealed in the duct without being exposed to the cleaning gas flowing into the filter enclosure. During the cleaning process, the cleaning gas flows from the upstream vacuum pump into the filter, containment chamber and passes through the chamber. The reactivation of the cleaning gas takes place here. The final product is discharged to the exhaust system. The filter assembly contains at least one or several disks, which are sealed and arranged on the inner wall of the filter enclosure and the heater duct Inside the wall. Each disc provides a cycle of filtering action. The filter holes of the discs upstream of the airflow are larger than the filter holes of the discs downstream of the airflow. The filter discs with larger filter holes are larger. National Standard (CNS) A4 specification (210X 297 mm)

....... 0; (Please read the notes on the back before filling in this page} 、 一 Τ 线 一 536739 A7

The particles then pass through a filter disk located downstream, where only fine particles pass through. A filter disc with a smaller filter hole can provide a higher filtration efficiency of ~ 1000 *, however, this will reduce the gas flow rate and affect the suction rate. Please refer to Figure 1, which shows an example of a third-order particle filter. = The filter disc provides three-stage filtration for higher retention efficiency. The filter holes of the filter disc are about 30 microns, while the filter discs of the third filter disc are about 10 microns. In summary, the material used to construct the filter can be any material that is resistant to the environment. For example, the filter may be one or several discs made of porous -Xi P sentence materials (Ah03 or A1N), and is compatible with high temperature gas etching ring households. (Please read the notes on the back before writing this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is related to the discharge ... The deposition and removal of molybdenum from the white volume two-body cleaner (Si0x, siNX, sioxNy, etc.) or semiconductor (a-Si, P-Si, etc.) CVD thin films are deposited on the substrate. During the cleaning process, the 'cleaning gas system' continues to flow into the chamber. Fluorine-containing gas, chlorine-containing gas and halogen-containing gas can be used as the cleaning gas. For example, HF, f2, NF3, SF6, C2F6, cf4, c3f80 and CxFy can be used for cleaning. Fig. 2 illustrates one aspect of the present invention, in which the cleaning gas 300 is introduced into the processing unit 200, and is further guided to the filtering device 100 of the present invention for the purpose of removing α accumulated in the downstream of the pump. White powder in exhaust line 27. Plasma plasma treatment can be used to clean up the gas. On the page 17 of this system, this paper standard applies the Chinese National Standard (CNS) A4 specification (2Η) × 297 public love) 536739 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. In the description of the invention (), then Purge gas is supplied into the chamber. Next, a glow discharge plasma is applied to the precursor gas at the proximal end to cause it to generate reactive species in the chamber. These reactive species form volatile compounds on the surface of the chamber with process residues, thereby removing the surface of the chamber. In another complaint, the 'plasma can be supplied at the far end. The remote plasma source cleaning system includes at least one source of cleaning gas connected to a remote activation chamber. The gas source includes a precursor gas source; an electronic control valve and a flow control mechanism for controlling the gas flow of the precursor; and a conduit for gas to flow into the remote activation chamber, wherein the activation chamber is located in the processing chamber Outside and at a distance from the processing chamber. A start-up power source, such as a high-power microwave generator, is used to activate a precursor gas in a remote activation chamber. The distal chamber can be a sapphire tube, and the power source can be a 2 54GHZ microwave energy source for the sapphire tube output. The precursor gas may be a fluorine-containing gas, a chlorine-containing gas, or a tooth-containing gas, such as NF3. The flow rate of the activated species is about 2 liters per minute, and the pressure in the processing chamber is about 0.5 Torr. The microwave source delivers approximately 3,000 "to 2,000 watts to the remote activation chamber to activate the precursor gas. In many applications 5,000 watts can be used. When activated, a plasma of cleaning gas is generated in the terminal chamber, and a part of the plasma is subsequently introduced into the processing chamber. FIG. 3 illustrates another embodiment of the present invention, in which the processing chamber 200 is cleaned by a remote electric beam source 280, and the cleaning gas 300 is further guided to the filtering device 100 of the present invention to clear the accumulation White powder in exhaust line 280 downstream of pump 260. During substrate processing, various gaseous wastes and pollutants are discharged from the processing chamber into the vacuum manifold. These effluents may include some of the anti-first items. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ......... AW ...... ... 1T ......... $ · (Please read the precautions on the back before writing this page) 536739 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

Product and / or derivative 'and leave residues or similar powdery substances in the exhaust line. With the filtering device of the present invention, particles can be trapped by a particle filter disc located inside the filtering device. Unused, remaining cleaning gas, such as F2 or F, will flow into the exhaust line during the cleaning process. The aforementioned filtering equipment is heated to 100-250 ° C. When the temperature rises, the cleaning gas is reactivated so that it can react with solid residues and change to a gaseous state. For example, the reaction of a solid residue (such as SiN) with a cleaning gas (such as F 2 or F) is expressed by the following reaction formula:

SiN (solid) + F (F2) + SiF4 (gaseous) The converted gaseous residue is then extracted. It can be visually observed that the trap and self-cleaning method of the present invention can reduce white powder in the exhaust line. Example 3 Discharge of white powder remover The AKT PECVD system is an example of using the method and equipment of the present invention, 'where the CVD silane process (oxides, nitrides, and amorphous stones) is completed' and the chamber needs to be cleaned regularly. Solid residue (white powder) will accumulate in the exhaust line of the vacuum pump and form a high-pressure blockage in the exhaust line. High pressure blockages in the exhaust lines can cause vacuum pumping to fail. Solid residues can reduce the diameter of the exhaust line and can even completely block the exhaust line. Solid residues will also shorten the life of the vacuum pump. Examples of excess solid residues include SiN, Si0, j By, (NhhSiF6, NHJ, SiH4, Y3, and HF. By page 19 of the vacuum pump ... .... 0 ........., order ......... $ · f Please read the notes on the back before filling in this page} 536739 A7

Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention () A white powder remover is installed on the exhaust line, and the white powder will be trapped and removed in the filtering airtight room. This treatment can prolong the service life of the vacuum pump, and can greatly reduce the system downtime, thereby greatly reducing the maintenance costs. In summary, the filtering equipment of the present invention uses existing chamber resources and reactivation means (such as heating) to clean the exhaust line of the substrate processing chamber. Compared with conventional cleaning equipment (such as Raoux's plasma cleaning equipment (DPA)), the filtering equipment disclosed herein has the following advantages: Raoux's DPA is located in the front line of the chamber, which will affect the Pump performance. In order to operate a DPA, the operation of the system must be heavily controlled, such as using additional plasma sources and electrostatic potential energy. In comparison, the filtering device of the present invention is far simpler than DPA... No additional plasma source is required to be applied to the exhaust line; no additional gas is required for cleaning; and no or only a small amount of maintenance is required. Since the filtering device of the present invention is installed downstream of the f pump and is located inside the exhaust line, the performance of the pump will not be affected; it will be affected. Those skilled in the art can easily understand that the present invention can realize the above-mentioned purpose, and obtain the above-mentioned effects and advantages and their inherent effects and advantages. Those skilled in the art can make various changes and modifications to the present invention while implementing the present invention, without departing from the spirit and scope of the present invention. Changes and other applications adopted by those skilled in the art will not depart from the scope defined by the scope of patent application. —............. AW ........ 1T ......... $ · (Please read the notes on the back before filling this page) Page 20 page

Claims (1)

536739 Sixth, the Intellectual Property Bureau of the Ministry of Economic Affairs printed a patent application scope for a consumer cooperative. 1 A substrate processing system includes at least: a processing chamber; an exhaust system, wherein the exhaust system includes at least a vacuum pump; a vacuum An exhaust line, and a filtering device, wherein the filtering device is disposed downstream of the vacuum pump and located in the vacuum exhaust line; and a device for providing at least one cleaning gas to the processing chamber. 2 · The substrate processing system according to item 1 of the scope of the patent application, wherein the processing chamber is selected from the group consisting of a flat display chamber and a semiconductor processing chamber. 3. The substrate processing system according to item 2 of the scope of patent application, wherein the semiconductor processing chamber is selected from the group consisting of a chemical vapor deposition chamber and an etching processing chamber. 4. The substrate processing system according to item 1 of the scope of patent application, wherein the filtering device is a closed system, the closed system includes one or more filter disks, a heater, and a duct surrounding the heater Wherein, the filter disc is hermetically arranged inside the wall surface of the closed system and the wall surface of the duct. Page 21 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) ——One 丨 · Installation ............ Order ......... Refer (Please read first Note on the back, please fill out this page again) Printed 536739 as B8 C8 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, and applied for the patent coverage c ^ ^ ^ β described in the substrate processing system '5 of the above. 4 hazards: a hole of 30 μm in size. It is considered that the disk has a substrate processing system of about 10 micrometers. 6 described by the state of society_α, in which the above 6 · is a filter with a larger filter hole as described in Feng Qingbo, No. 4 of the scope of patent application. Plate configuration filter plate < The configuration method is to use 6, U 〇 in the filter plate with smaller filter holes 7. The substrate processing system as described in the scope of patent application item i, wherein the above-mentioned equipment is free or Less solid stagnation builds up in the vacuum exhaust line. 8. The substrate processing system according to item 7 in the scope of the patent application, wherein the above-mentioned filtering equipment traps the solid residues. 9. The substrate processing system according to item 7 in the scope of the patent application, wherein the solid residue is selected from the group consisting of SiN, SiO, a-Si, (NH4) 2SiF6, NH4F, SiH4, NH3, and HF . I 0 · The substrate processing system according to item 1 of the scope of the patent application, wherein the cleaning gas system is selected from the group consisting of a fluorine-containing gas, a gas-containing gas, and a pixel-containing gas. II · The substrate processing system as described in item 10 of the scope of patent application, wherein the above-mentioned fluorine-containing gas system is selected from the group consisting of HF, F2, NF3, SF6, C2F6, CF4, and 22nd paper. This paper standard is applicable to Chinese national standards (CNS ) A4 specification (210X 297 public love) ---- Γ ... install ......... Order ... (Please read the precautions on the back before filling this page) 536739 ABCD VI. The group of patent applications C3F80 and CxFy. 1 2 · —A method for removing or reducing solid residues accumulated in an exhaust line of a substrate processing system, the method includes at least the following steps: introducing at least one cleaning gas into a processing chamber, wherein the cleaning gas further Flowing into the exhaust line; trapping solid residues generated during the processing of the substrate, wherein the residues are retained or filtered by a filtering device located downstream of the vacuum pump and in the exhaust line; The heating is performed through a thorium device, wherein the cleaning gas is activated again, and further reacts with the trapped solid residues, thereby transforming the solid residues into gaseous residues; and discharging the gaseous residues through the exhaust line Solids, thus removing or reducing solid residues accumulated in the exhaust line. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 3. The method described in item 12 of the scope of patent application, wherein the solid residue is selected from the group consisting of SiN, SiO , A -Si, (NH4) 2SiF6, NKUF, SiH4, NH3 and HF. 14. The method according to item 12 of the scope of patent application, wherein the cleaning gas system is selected from the group consisting of a fluorine-containing gas, a chlorine-containing gas, and a halogen-containing gas. Page 23 This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) 536739 A8 B8 C8 ~ --—_ B! _____ / 、 W patent scope 1 5 The method described above, wherein the fluorine-containing gas system is selected from the group consisting of HF, F2, NF3 'SF6, C2F6, CF4, C3F80, and CxFy. 16. The method according to item i2 of the scope of patent application, wherein the processing chamber is selected from the group consisting of a flat display chamber and a semiconductor processing chamber. 17. The method according to item 16 of the scope of patent application, wherein the semiconductor processing chamber is selected from the group consisting of a chemical vapor deposition chamber and an etching processing chamber. 18. The method according to item 12 of the scope of patent application, wherein the above-mentioned heating device is heated to 100 to 250. (：. 1 9 · A method for removing or reducing solid residue accumulated in the exhaust line of a substrate processing system, the method includes at least the following steps: a process of introducing at least one precursor gas into the substrate processing system Chamber; applying a plasma to a precursor gas in the processing chamber, wherein the electropolymerization activates the precursor gas to form a plasma of a cleaning gas, and wherein the cleaning gas further flows into the exhaust line; during the process of intercepting the substrate The solid residues generated, which are retained or filtered by a filtering device located downstream of the vacuum pump and in the exhaust line; page 24 This paper applies Chinese National Standard (CNS) A4 Specifications (210 × 297 mm) ---- ^. IAW · (Please read the notes on the back before filling out this page) π # Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536739 Printed by the Employees’ Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 8, the scope of patent application for heating the filtering equipment, in which the cleaning gas is activated again, and further blocked with The remaining solid residues react to convert the solid residues into gaseous residues; and the gaseous residues are discharged through the exhaust line, thereby removing the solid residues accumulated in the exhaust line. The method as described in claim 19, wherein the solid residue is selected from the group consisting of SiN, SiO, a-Si, (NH4) 2S.iF6, NH4F, SiH4, NH3, and HF. 2 1 The method according to item 19 of the scope of patent application, wherein the cleaning gas system is selected from the group consisting of a fluorine-containing gas, a chlorine-containing gas, and a gas containing a function element. The method described above, wherein the gas-containing system is selected from the group consisting of HF, F2, NF3, SF6, C2F6, CF4, C3f80, and CXFy. 23 · The method according to item 19 of the scope of patent application, wherein The processing chamber is selected from the group consisting of a flat display chamber and a semiconductor processing chamber. 24. The method according to item 23 of the scope of patent application, wherein the semiconductor processing chamber is selected from a chemical vapor deposition chamber and an etching processing chamber. All Composition ---- Γ · Installation ............ Order .......: (Please read the precautions on the back before filling this page) Page 25 ABCD 536739 群组 Group of patent application scope. (Please read the notes on the back before filling this page) 25. The method described in item 19 of the scope of patent application, in which the above filtering equipment is heated to 100 ° C to 250 ° C. 26. A method for removing or reducing solid residues accumulated in an exhaust line of a substrate processing system, the method comprising at least the following steps: introducing at least one precursor gas into a remote chamber, wherein the remote end The chamber is connected to the interior of the processing chamber of the substrate processing system; the precursor gas in the remote chamber is activated to form a plasma of the cleaning gas; the plasma of the cleaning gas is applied to the processing chamber, wherein The plasma of the cleaning gas further flows into the exhaust line; the solid residues generated during the processing of the substrate are intercepted, wherein the residues are provided by a filtering device located downstream of the vacuum pump and in the exhaust line Interception or filtration; heating the filtering equipment, wherein the cleaning gas is activated again, and further reacts with the trapped solid residues, so that the solid residues are converted into gaseous residues; and the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumer Cooperatives printed out the gaseous residues through the exhaust line, thus removing or reducing The solid residue accumulated. 27. The method as described in item 26 of the scope of patent application, wherein the solid residue is selected from the group consisting of SiN, SiO, a-Si, (NH4) 2SiF6, NH4F, page 26. The Chinese paper standard (CNS) A4 specifications (210X 297 mm) 536739 ABCD Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The group of patent applications SiH4, NH3 and HF. 2 8. The method according to item 26 of the scope of patent application, wherein the cleaning gas system is selected from the group consisting of a fluorine-containing gas, a chlorine-containing gas, and a tooth-containing gas. 29. The method according to item 1 of the scope of the patent application, wherein the fluorine-containing gas system is selected from the group consisting of HF, F2, NF3, SF6, C2F6, CF4, C3F80, and CXFy. 30. The method according to item 26 of the scope of patent application, wherein the processing chamber is selected from the group consisting of a flat display chamber and a semiconductor processing chamber. 0 31. The method according to item 30 of the scope of patent application The semiconductor processing chamber is selected from the group consisting of a chemical vapor deposition chamber and an etching processing chamber. 32. The method as described in item 26 of the scope of patent application, wherein the above-mentioned filtering equipment is heated to 10 (TC to 250 ° C ^ page 27) This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) ) —R * i ........., but ...... see (please read the precautions on the back before filling this page)