JP6208109B2 - イオン注入システムの性能を改善し、寿命を延ばす方法 - Google Patents
イオン注入システムの性能を改善し、寿命を延ばす方法 Download PDFInfo
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- JP6208109B2 JP6208109B2 JP2014220215A JP2014220215A JP6208109B2 JP 6208109 B2 JP6208109 B2 JP 6208109B2 JP 2014220215 A JP2014220215 A JP 2014220215A JP 2014220215 A JP2014220215 A JP 2014220215A JP 6208109 B2 JP6208109 B2 JP 6208109B2
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- gas
- cleaning
- ion implantation
- ion
- cathode
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
本発明は、半導体処理システムの構成要素、特にイオン注入システム上への材料堆積の監視、制御、および洗浄に関する。
イオン注入は、集積回路製造において、制御された量のドーパント不純物を半導体ウェハに正確に導入するために使用され、マイクロエレクトロニクス/半導体製造で重要なプロセスである。そのような注入システムでは、イオン源は、所望のドーパント元素ガスをイオン化し、そのイオンが、発生源から、所望のエネルギーのイオンビームの形で抽出される。抽出は、抽出されたビームが通過するためのアパーチャを組み込む適切な形状の抽出電極間に高電圧を印加することによって実現される。次いで、イオンビームが、ドーパント元素を加工物に注入するために、半導体ウェハなど加工物の表面に向けられる。ビームのイオンは、加工物の表面に浸透して、所望の導電性の領域を形成する。
これは、イオンビーム電流の損失をもたらし、イオン源の交換を必要とする。結果として生じるイオン源の性能低下および短い寿命により、イオン注入装置システムの生産性が低下する。
スを提供することがイオン注入の技術分野において望まれており、それによって、注入装置から取り外された汚染されている構成要素は、黒鉛電極など壊れやすい構成要素を損傷するおそれがある機械的な摩耗を何ら受けずに安全に洗浄することができる。したがって、注入システムからの取外し後に構成要素を選択的にかつ破壊せずに、さらに最小のダウンタイムで洗浄するために使用することができるオフライン洗浄ステーションを提供することも、イオン注入の技術分野での大きな進歩である。
本発明は、一般に、イオン注入システムまたはその構成要素を監視、制御、および洗浄するための装置および方法、ならびにそのような洗浄のために有用に採用される組成物に関する。
(a)タングステンをフィラメント上に堆積する条件と、
(b)堆積された材料をフィラメントからエッチングする条件と
からなる群から選択される条件下でフィラメントをタングステン試薬と接触させるステップを含む方法を提供する。
(a)材料をフィラメント上に堆積する条件と、
(b)堆積された材料をフィラメントからエッチングする条件と
からなる群から選択される条件下でシステムに洗浄ガスを流すステップを含む方法に関する。
本発明は、半導体処理システムおよび/またはその構成要素を監視、制御、および洗浄するため装置および方法、ならびにそのような洗浄のための組成物に関する。
本発明の洗浄プロセスは、そのようなイオン化関連堆積物を、それらがフレークおよび粒子を生成することができるようになる前に除去し、それにより、製品ウェハ上での粒子の減少および半導体デバイスの歩留まりの増加を実現する。
3F2(g)+W(s)→WF6(g) (1)
6F(g)+W(s)→WF6(g) (2)
また、以下のような、洗浄ガスとアークチャンバのタングステン材料との反応もあり得る。
3XeF2+W→3Xe+WF6 (3)
あるいは、WF6(またはWF5またはWF4)がシステムに直接供給されることもある。
WF6→W+3F2 (4)
2WF5→2W+5F2 (5)
WF4→W+2F2 (6)
WF6(g)+2W(s)→3WF2(g) (7)
2WF6(g)+W(s)→3WF4(g) (8)
5WF6(g)+W(s)→6WF5(g) (9)
例えば、気相反応性材料は、選択的に反応性があり、タングステン堆積物を構成要素から除去する一方で、構成要素自体のタングステンとも反応してよい。そのような共反応が生じるために、残留物と構成要素とは、全く同じ材料を有する必要はないが、いくつかの材料を共通して含むことがある。
2XeF2(g)+Si(s)→2Xe(g)+SiF4(g) (10)
シリコン/XeF2反応は、活性化させることなく、すなわちプラズマまたは熱的加熱を伴わずに行うことができる。XeF2とSiとの反応速度は、XeF2とSiO2との反応速度よりもはるかに高く、これは、XeF2をSiとの反応に関して選択性があるものにする。
3XeF2(g)+2B(s)→3Xe(g)+2BF3(g) (11)
ヒ素、リン、およびゲルマニウム用のエッチャントとしてのXeF2の使用が本発明によって意図されており、以下の反応を含んでもよい。
5XeF2(g)+2As(s)→5Xe(g)+2AsF5(g) (12)
5XeF2(g)+2P(s)→5Xe(g)+2PF5(g) (13)
2XeF2(g)+Ge(s)→2Xe(g)+GeF4(g) (14)
そのような反応は、エネルギー活性化を伴って、または伴わずに行うことができる。
第2に、プラズマおよび/またはビーム電流を増強および/または安定させる。
リン堆積物を洗浄するのに必要なXeF2の量が表1に示され、洗浄反応中に放出される熱量が表2に示される。
などXe回収システムをさらに備えることが好ましく、これは、本明細書に援用するhttp://www.fabtech.org/product_briefings/_a/new_product_air_products_offers_on_ site_xenon_recoveryに記載されている。
るものなどXe回収システムを備えることをさらに含み、これは、本明細書に援用するhttp://www.fabtech.org/product_briefings/_a/new_product_air_products_offers_on_site_xenon_recoveryに記載されている。
この実施例は、化学洗浄剤を使用して堆積物を除去することによって実現することができる、イオン源の寿命および注入装置の利用性の改善を示す。好ましくは、注入装置内での汚染物質フレークおよび導電被膜の蓄積を防止するために、堆積物を定期的に除去する。
各データ点が、ウェハロットに注入するのに必要な時間中の平均抑制器電流を表し、それらの点は、複数のイオン源の寿命にわたってプロットされている。漏れの大きさは、最後の予防保守で絶縁体を交換してからの経過時間に依存する。このデータは、定期的なインサイチュ洗浄が漏れ電流を大幅に減少させ、したがって、定期保守以外の発生源保守が必要とされる1.5mAの管理上限に漏れ電流が達することは決してなかったことを示す。
るとき、第1のドーパントガスの流れが終了した後、長期にわたって、第1のドーパントの元素からのイオンがイオン源プラズマから抽出され続ける。この効果は、場合によっては、所望のイオンビームの激しい汚染を引き起こし、その結果、注入プロセスを機能低下させる。
発生源寿命は、インサイチュ洗浄によって効果的に倍増され、各中電流ツール毎に約100時間の追加の製造時間を生み出した。その結果得られた、テストウェハの節約、ならびに適性検査済ウェハ(各中電流注入装置ごとに年間で最大40回の適性検査が行われる)の後処理に必要な製造時間および計測ツールの節約が、インサイチュ洗浄の効果を示した。
この実施例は、例示的なイオン注入装置システムのイオン源内でのフィラメント成長の制御を示す。
Claims (6)
- カソードを有するイオン源を備えるイオン注入システムの性能を改善し、寿命を延ばす方法であって、
(a)イオン注入処理中にイオン源チャンバにドーパントガスを供給すること、
(b)前記カソード上への堆積と、前記カソードからのエッチングに影響する1つ以上の条件をモニタすること、
(c)上記モニタに応答して、少なくとも1つの洗浄ガスと少なくとも1つのフッ素化堆積ガスとを含むガス混合物と前記カソードとを接触させること、堆積又はエッチングを生じさせるのに十分な温度へ前記イオン源の温度を調整すること、を含み、前記ガス混合物が、前記温度に基づき、前記カソード上への材料の堆積と、前記カソードからの同じまたは他の材料の剥脱を行い、
前記洗浄ガスが、AsH 3 、PH 3 、SiH 4 、H 2 /Xe、GeH 4 、H 2 、B 2 H 6 、CO、CH 4 、Xe/NH 3 ,Ar/NH 3 ,Ne/NH 3 、及びAr/Xeから選択される1以上のガス又はガス混合物を含む気相反応性材料を含み、前記洗浄ガスが前記イオン源における前記温度を制御することにより前記カソード上の堆積物のエッチングに効果的であり、
前記フッ素化堆積ガスが、F 2 、N 2 F 4 、AsF 3 、PF 3 、PF 5 、SiF 4 、GeF 4 、BF 3 、CF 4 、COF 2 、ClF 3 、WF 6 、MoF 6 、及びNF 3 から選択される少なくとも1つのガスを含み、前記ドーパントガスがフッ素化ドーパントガスを含む場合に前記フッ素化ドーパントガス及び前記フッ素化堆積ガスが同一であってもよいことを条件に、前記イオン源における前記温度を制御することにより前記フッ素化堆積ガスが前記カソードを再成長させることに効果的である、
方法。 - 前記ガス混合物のガスが、前記カソードに接触するように同時に流れる、請求項1に記載のイオン注入システムの性能を改善し、寿命を延ばす方法。
- 前記ガス混合物が、少なくとも1つの非ドーパントガスと少なくとも1つのドーパントガスとの組合せを含む、請求項1に記載のイオン注入システムの性能を改善し、寿命を延ばす方法。
- 前記ガス混合物が、吸着脱着ガス貯蔵および計量供給システム、圧力調整ガス貯蔵および計量供給システム、およびハイブリッド吸着脱着圧力調整ガス貯蔵および計量供給システムから選択されるガス貯蔵および計量供給システムにより貯蔵および計量供給される、請求項1または2に記載のイオン注入システムの性能を改善し、寿命を延ばす方法。
- 前記ガス混合物のガスが、前記カソードに接触するように同時に流れる、請求項1に記載のイオン注入システムの性能を改善し、寿命を延ばす方法。
- 前記ガス混合物が、吸着脱着ガス貯蔵および計量供給システム、圧力調整ガス貯蔵および計量供給システム、およびハイブリッド吸着脱着圧力調整ガス貯蔵および計量供給システムから選択されるガス貯蔵および計量供給システムにより貯蔵および計量供給される、請求項1に記載のイオン注入システムの性能を改善し、寿命を延ばす方法。
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Also Published As
Publication number | Publication date |
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TWI494975B (zh) | 2015-08-01 |
JP5686423B2 (ja) | 2015-03-18 |
EP2248153B1 (en) | 2016-09-21 |
JP2012517684A (ja) | 2012-08-02 |
JP5433025B2 (ja) | 2014-03-05 |
SG188150A1 (en) | 2013-03-28 |
TWI573179B (zh) | 2017-03-01 |
KR20110005683A (ko) | 2011-01-18 |
TW201724209A (zh) | 2017-07-01 |
JP2014089968A (ja) | 2014-05-15 |
TW201005806A (en) | 2010-02-01 |
TW201530624A (zh) | 2015-08-01 |
US9991095B2 (en) | 2018-06-05 |
KR20150115960A (ko) | 2015-10-14 |
EP2248153A4 (en) | 2012-01-18 |
JP2011512015A (ja) | 2011-04-14 |
US20110259366A1 (en) | 2011-10-27 |
KR101755970B1 (ko) | 2017-07-07 |
US20120058252A1 (en) | 2012-03-08 |
EP2248153A2 (en) | 2010-11-10 |
KR20160128462A (ko) | 2016-11-07 |
JP2015026623A (ja) | 2015-02-05 |
TWI619153B (zh) | 2018-03-21 |
WO2009102762A3 (en) | 2009-11-12 |
CN101981661A (zh) | 2011-02-23 |
WO2009102762A2 (en) | 2009-08-20 |
KR101822779B1 (ko) | 2018-01-26 |
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