JP2012501554A5 - - Google Patents

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Publication number
JP2012501554A5
JP2012501554A5 JP2011525243A JP2011525243A JP2012501554A5 JP 2012501554 A5 JP2012501554 A5 JP 2012501554A5 JP 2011525243 A JP2011525243 A JP 2011525243A JP 2011525243 A JP2011525243 A JP 2011525243A JP 2012501554 A5 JP2012501554 A5 JP 2012501554A5
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JP
Japan
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type
region
substrate
doped
well region
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JP2011525243A
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English (en)
Japanese (ja)
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JP2012501554A (ja
JP5734854B2 (ja
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Priority claimed from PCT/US2009/055408 external-priority patent/WO2010025391A2/en
Publication of JP2012501554A publication Critical patent/JP2012501554A/ja
Publication of JP2012501554A5 publication Critical patent/JP2012501554A5/ja
Application granted granted Critical
Publication of JP5734854B2 publication Critical patent/JP5734854B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011525243A 2008-08-29 2009-08-28 半導体基板用集積フォトダイオード Expired - Fee Related JP5734854B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9329208P 2008-08-29 2008-08-29
US61/093,292 2008-08-29
PCT/US2009/055408 WO2010025391A2 (en) 2008-08-29 2009-08-28 Integrated photodiode for semiconductor substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014075479A Division JP2014140065A (ja) 2008-08-29 2014-04-01 半導体基板用集積フォトダイオード

Publications (3)

Publication Number Publication Date
JP2012501554A JP2012501554A (ja) 2012-01-19
JP2012501554A5 true JP2012501554A5 (enExample) 2014-05-22
JP5734854B2 JP5734854B2 (ja) 2015-06-17

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011525243A Expired - Fee Related JP5734854B2 (ja) 2008-08-29 2009-08-28 半導体基板用集積フォトダイオード
JP2014075479A Pending JP2014140065A (ja) 2008-08-29 2014-04-01 半導体基板用集積フォトダイオード
JP2016060064A Expired - Fee Related JP6346911B2 (ja) 2008-08-29 2016-03-24 半導体基板用集積フォトダイオード

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2014075479A Pending JP2014140065A (ja) 2008-08-29 2014-04-01 半導体基板用集積フォトダイオード
JP2016060064A Expired - Fee Related JP6346911B2 (ja) 2008-08-29 2016-03-24 半導体基板用集積フォトダイオード

Country Status (5)

Country Link
US (3) US8410568B2 (enExample)
JP (3) JP5734854B2 (enExample)
KR (2) KR101627684B1 (enExample)
TW (1) TW201013953A (enExample)
WO (1) WO2010025391A2 (enExample)

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US8410568B2 (en) 2008-08-29 2013-04-02 Tau-Metrix, Inc. Integrated photodiode for semiconductor substrates
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US9559228B2 (en) 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
US8992803B2 (en) 2011-09-30 2015-03-31 Sunpower Corporation Dopant ink composition and method of fabricating a solar cell there from
US8586397B2 (en) 2011-09-30 2013-11-19 Sunpower Corporation Method for forming diffusion regions in a silicon substrate
TWI427783B (zh) * 2011-10-28 2014-02-21 Ti Shiue Biotech Inc 應用於分子檢測與鑑別的多接面結構之光二極體及其製造方法
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US10892373B2 (en) * 2019-02-07 2021-01-12 Newport Fab, Llc Germanium photodiode with silicon cap
US11251217B2 (en) * 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
CN115206940B (zh) * 2022-06-30 2024-11-29 上海韦尔半导体股份有限公司 一种用于插指形光电二极管电势分析的测试结构与测试方法

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