KR101627684B1 - 반도체 기판에 대한 집적 포토다이오드 - Google Patents

반도체 기판에 대한 집적 포토다이오드 Download PDF

Info

Publication number
KR101627684B1
KR101627684B1 KR1020117007285A KR20117007285A KR101627684B1 KR 101627684 B1 KR101627684 B1 KR 101627684B1 KR 1020117007285 A KR1020117007285 A KR 1020117007285A KR 20117007285 A KR20117007285 A KR 20117007285A KR 101627684 B1 KR101627684 B1 KR 101627684B1
Authority
KR
South Korea
Prior art keywords
region
doped
substrate
light
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117007285A
Other languages
English (en)
Korean (ko)
Other versions
KR20110084876A (ko
Inventor
개리 엘. 스테인브루크
제임스 비. 비커스
마리오 엠. 펠레라
마지드 아그하바바자데흐
Original Assignee
타우-메트릭스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 타우-메트릭스 인코포레이티드 filed Critical 타우-메트릭스 인코포레이티드
Publication of KR20110084876A publication Critical patent/KR20110084876A/ko
Application granted granted Critical
Publication of KR101627684B1 publication Critical patent/KR101627684B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/289—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being transparent or semi-transparent devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2218—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group IV-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
KR1020117007285A 2008-08-29 2009-08-28 반도체 기판에 대한 집적 포토다이오드 Expired - Fee Related KR101627684B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9329208P 2008-08-29 2008-08-29
US61/093,292 2008-08-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147027667A Division KR101619206B1 (ko) 2008-08-29 2009-08-28 반도체 기판에 대한 집적 포토다이오드

Publications (2)

Publication Number Publication Date
KR20110084876A KR20110084876A (ko) 2011-07-26
KR101627684B1 true KR101627684B1 (ko) 2016-06-07

Family

ID=41722320

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117007285A Expired - Fee Related KR101627684B1 (ko) 2008-08-29 2009-08-28 반도체 기판에 대한 집적 포토다이오드
KR1020147027667A Expired - Fee Related KR101619206B1 (ko) 2008-08-29 2009-08-28 반도체 기판에 대한 집적 포토다이오드

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147027667A Expired - Fee Related KR101619206B1 (ko) 2008-08-29 2009-08-28 반도체 기판에 대한 집적 포토다이오드

Country Status (5)

Country Link
US (3) US8410568B2 (enExample)
JP (3) JP5734854B2 (enExample)
KR (2) KR101627684B1 (enExample)
TW (1) TW201013953A (enExample)
WO (1) WO2010025391A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8410568B2 (en) 2008-08-29 2013-04-02 Tau-Metrix, Inc. Integrated photodiode for semiconductor substrates
JP5387212B2 (ja) 2009-07-31 2014-01-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
EP2467881A4 (en) * 2009-08-21 2014-12-24 California Inst Of Techn SYSTEMS AND METHODS FOR OPTICALLY POWERING TRANSDUCERS AND TRANSDUCERS THEREOF
US8586403B2 (en) * 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8486746B2 (en) * 2011-03-29 2013-07-16 Sunpower Corporation Thin silicon solar cell and method of manufacture
US9559228B2 (en) * 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
US8586397B2 (en) 2011-09-30 2013-11-19 Sunpower Corporation Method for forming diffusion regions in a silicon substrate
US8992803B2 (en) 2011-09-30 2015-03-31 Sunpower Corporation Dopant ink composition and method of fabricating a solar cell there from
TWI427783B (zh) * 2011-10-28 2014-02-21 Ti Shiue Biotech Inc 應用於分子檢測與鑑別的多接面結構之光二極體及其製造方法
WO2013130257A1 (en) 2012-03-01 2013-09-06 California Institute Of Technology Methods of modulating microlasers at ultralow power levels, and systems thereof
JP2015530564A (ja) 2012-07-25 2015-10-15 カリフォルニア インスティチュート オブ テクノロジー 機能ゲート及びベース電極を有するナノピラー電界効果型及び接合型トランジスタ
US9252234B2 (en) * 2012-09-06 2016-02-02 International Business Machines Corporation Partially-blocked well implant to improve diode ideality with SiGe anode
US8883645B2 (en) 2012-11-09 2014-11-11 California Institute Of Technology Nanopillar field-effect and junction transistors
US11837669B2 (en) * 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
SG11201510033RA (en) 2013-06-12 2016-01-28 Massachusetts Inst Technology Optical modulator from standard fabrication processing
DE102014218772A1 (de) * 2014-09-18 2016-03-24 Technische Universität Dresden Photovoltaisches Element
FR3029373B1 (fr) * 2014-12-02 2018-01-12 Sunpartner Technologies Dispositif electronique associe a un module photovoltaique pour optimiser le debit d'une transmission bidirectionnelle de type vlc
US11105974B2 (en) * 2015-06-30 2021-08-31 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
CN110931578B (zh) * 2018-09-20 2024-05-28 台湾积体电路制造股份有限公司 光电探测器及其形成方法
CN109891585B (zh) 2019-01-30 2020-03-27 长江存储科技有限责任公司 具有垂直扩散板的电容器结构
US10892373B2 (en) * 2019-02-07 2021-01-12 Newport Fab, Llc Germanium photodiode with silicon cap
US11251217B2 (en) * 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
CN115206940B (zh) * 2022-06-30 2024-11-29 上海韦尔半导体股份有限公司 一种用于插指形光电二极管电势分析的测试结构与测试方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005086063A (ja) 2003-09-10 2005-03-31 Keio Gijuku フォトダイオード及び集積化光受信器
US20050253132A1 (en) * 2002-07-11 2005-11-17 Marshall Gillian F Photodetector circuits

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181586A (enExample) * 1975-01-13 1976-07-16 Nippon Electric Co
JPS5526661A (en) * 1978-08-15 1980-02-26 Sharp Corp Photo-semiconductor device
JPS57100761A (en) * 1980-12-16 1982-06-23 Fujitsu Ltd Semiconductor light sensitive device
JPS6355980A (ja) * 1986-08-26 1988-03-10 Matsushita Electric Works Ltd フオトダイオ−ドアレイの製法
JPS6481522A (en) * 1987-09-24 1989-03-27 Agency Ind Science Techn Optical control circuit and semiconductor device constituting said circuit
JP3029497B2 (ja) * 1991-12-20 2000-04-04 ローム株式会社 フォトダイオードアレイおよびその製造法
JPH06268247A (ja) * 1993-03-15 1994-09-22 Matsushita Electric Works Ltd 光結合型半導体リレー
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
JPH09260715A (ja) * 1996-03-25 1997-10-03 Sanyo Electric Co Ltd ホトダイオード内蔵半導体集積回路
JPH09260501A (ja) * 1996-03-25 1997-10-03 Sanyo Electric Co Ltd ホトダイオード内蔵半導体集積回路
JPH1051017A (ja) * 1996-08-02 1998-02-20 Sanyo Electric Co Ltd 半導体装置
JP2970580B2 (ja) * 1997-03-21 1999-11-02 日本電気株式会社 半導体チップ、光受信モジュールおよび光受信モジュールの製造方法
US6529018B1 (en) * 1998-08-28 2003-03-04 International Business Machines Corporation Method for monitoring defects in polysilicon gates in semiconductor devices responsive to illumination by incident light
JP2001077400A (ja) * 1999-08-31 2001-03-23 Tokai Rika Co Ltd 半導体フォトデバイス
TW419834B (en) * 1999-09-01 2001-01-21 Opto Tech Corp Photovoltaic generator
JP2001135849A (ja) * 1999-11-05 2001-05-18 Matsushita Electronics Industry Corp 受光装置
JP2003007975A (ja) * 2001-06-27 2003-01-10 Sony Corp 半導体装置およびその製造方法
US20030015705A1 (en) * 2001-07-17 2003-01-23 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices with an energy source
JP3859480B2 (ja) 2001-10-17 2006-12-20 株式会社ルネサステクノロジ 検査方法
JP2004006778A (ja) * 2002-04-04 2004-01-08 Toshiba Corp Ｍｏｓｆｅｔ、その製造方法及びそれを用いた光半導体リレー装置
KR20040057238A (ko) * 2002-12-26 2004-07-02 삼성전기주식회사 포토다이오드, 이를 구비한 광전자 집적회로장치 및 그제조방법
JP2005158834A (ja) 2003-11-21 2005-06-16 Sanyo Electric Co Ltd 光半導体装置
TWI226137B (en) 2004-01-09 2005-01-01 Integrated Crystal Technology Structure of dual-pad high speed photodiode
US8120060B2 (en) 2005-11-01 2012-02-21 Massachusetts Institute Of Technology Monolithically integrated silicon and III-V electronics
US7928317B2 (en) * 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
US8410568B2 (en) 2008-08-29 2013-04-02 Tau-Metrix, Inc. Integrated photodiode for semiconductor substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050253132A1 (en) * 2002-07-11 2005-11-17 Marshall Gillian F Photodetector circuits
JP2005086063A (ja) 2003-09-10 2005-03-31 Keio Gijuku フォトダイオード及び集積化光受信器

Also Published As

Publication number Publication date
JP2014140065A (ja) 2014-07-31
KR101619206B1 (ko) 2016-05-18
JP6346911B2 (ja) 2018-06-20
JP5734854B2 (ja) 2015-06-17
JP2012501554A (ja) 2012-01-19
US8872297B2 (en) 2014-10-28
US8410568B2 (en) 2013-04-02
WO2010025391A2 (en) 2010-03-04
US20100084729A1 (en) 2010-04-08
WO2010025391A3 (en) 2010-04-22
US20160104812A1 (en) 2016-04-14
JP2016157956A (ja) 2016-09-01
KR20110084876A (ko) 2011-07-26
KR20140127916A (ko) 2014-11-04
US20130334644A1 (en) 2013-12-19
TW201013953A (en) 2010-04-01

Similar Documents

Publication Publication Date Title
KR101627684B1 (ko) 반도체 기판에 대한 집적 포토다이오드
EP0625803B1 (en) Photodiode structure
US7453131B2 (en) Photodiode detector and associated readout circuitry
US9257589B2 (en) Single photon avalanche diode with second semiconductor layer burried in epitaxial layer
US7160753B2 (en) Silicon-on-insulator active pixel sensors
JP2017005276A (ja) シングルフォトンアバランシェダイオード
US6281428B1 (en) Photovoltaic generator
US7851839B2 (en) High-sensitivity image sensor and fabrication method thereof
US11316063B2 (en) Diode devices and methods of forming a diode device
US20240097052A1 (en) Systems and methods for stacked sensors with electrical insulation
US5598023A (en) Photoelectric converting apparatus
US20090127597A1 (en) Photodiode Structure
US8513753B1 (en) Photodiode having a buried well region
KR102891611B1 (ko) 수광소자
KR100531234B1 (ko) 고감도 이미지 센서 및 그 제조방법
KR100531240B1 (ko) 고감도 이미지 센서 및 그 제조방법
KR100531237B1 (ko) 고감도 이미지 센서 및 그 제조방법
JP2706180B2 (ja) 光電変換装置
KR100531236B1 (ko) 고감도 이미지 센서 및 그 제조방법
EP2216815A1 (en) Integrated circuit comprising a PIN diode and method of production

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A107 Divisional application of patent
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20190227

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210601

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000