JP5734854B2 - 半導体基板用集積フォトダイオード - Google Patents

半導体基板用集積フォトダイオード Download PDF

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Publication number
JP5734854B2
JP5734854B2 JP2011525243A JP2011525243A JP5734854B2 JP 5734854 B2 JP5734854 B2 JP 5734854B2 JP 2011525243 A JP2011525243 A JP 2011525243A JP 2011525243 A JP2011525243 A JP 2011525243A JP 5734854 B2 JP5734854 B2 JP 5734854B2
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type
region
substrate
heavily doped
doped
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JP2012501554A5 (enExample
JP2012501554A (ja
Inventor
エル スタインブリュック，ゲーリー
エル スタインブリュック，ゲーリー
ビー ヴィッカーズ，ジェイムズ
ビー ヴィッカーズ，ジェイムズ
エム ペレラ，マリオ
エム ペレラ，マリオ
アグハババザデー，マジド
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Tau Metrix Inc
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Tau Metrix Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/289—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being transparent or semi-transparent devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2218—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group IV-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
JP2011525243A 2008-08-29 2009-08-28 半導体基板用集積フォトダイオード Expired - Fee Related JP5734854B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9329208P 2008-08-29 2008-08-29
US61/093,292 2008-08-29
PCT/US2009/055408 WO2010025391A2 (en) 2008-08-29 2009-08-28 Integrated photodiode for semiconductor substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014075479A Division JP2014140065A (ja) 2008-08-29 2014-04-01 半導体基板用集積フォトダイオード

Publications (3)

Publication Number Publication Date
JP2012501554A JP2012501554A (ja) 2012-01-19
JP2012501554A5 JP2012501554A5 (enExample) 2014-05-22
JP5734854B2 true JP5734854B2 (ja) 2015-06-17

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JP2011525243A Expired - Fee Related JP5734854B2 (ja) 2008-08-29 2009-08-28 半導体基板用集積フォトダイオード
JP2014075479A Pending JP2014140065A (ja) 2008-08-29 2014-04-01 半導体基板用集積フォトダイオード
JP2016060064A Expired - Fee Related JP6346911B2 (ja) 2008-08-29 2016-03-24 半導体基板用集積フォトダイオード

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JP2014075479A Pending JP2014140065A (ja) 2008-08-29 2014-04-01 半導体基板用集積フォトダイオード
JP2016060064A Expired - Fee Related JP6346911B2 (ja) 2008-08-29 2016-03-24 半導体基板用集積フォトダイオード

Country Status (5)

Country Link
US (3) US8410568B2 (enExample)
JP (3) JP5734854B2 (enExample)
KR (2) KR101627684B1 (enExample)
TW (1) TW201013953A (enExample)
WO (1) WO2010025391A2 (enExample)

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US8486746B2 (en) * 2011-03-29 2013-07-16 Sunpower Corporation Thin silicon solar cell and method of manufacture
US9559228B2 (en) 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
US8992803B2 (en) 2011-09-30 2015-03-31 Sunpower Corporation Dopant ink composition and method of fabricating a solar cell there from
US8586397B2 (en) 2011-09-30 2013-11-19 Sunpower Corporation Method for forming diffusion regions in a silicon substrate
TWI427783B (zh) * 2011-10-28 2014-02-21 Ti Shiue Biotech Inc 應用於分子檢測與鑑別的多接面結構之光二極體及其製造方法
WO2013130257A1 (en) 2012-03-01 2013-09-06 California Institute Of Technology Methods of modulating microlasers at ultralow power levels, and systems thereof
JP2015530564A (ja) 2012-07-25 2015-10-15 カリフォルニア インスティチュート オブ テクノロジー 機能ゲート及びベース電極を有するナノピラー電界効果型及び接合型トランジスタ
US9252234B2 (en) * 2012-09-06 2016-02-02 International Business Machines Corporation Partially-blocked well implant to improve diode ideality with SiGe anode
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US11837669B2 (en) * 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
WO2014201286A1 (en) 2013-06-12 2014-12-18 Popovic Milos A Optical modulator from standard fabrication processing
DE102014218772A1 (de) * 2014-09-18 2016-03-24 Technische Universität Dresden Photovoltaisches Element
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US11105974B2 (en) * 2015-06-30 2021-08-31 Massachusetts Institute Of Technology Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same
CN110931578B (zh) * 2018-09-20 2024-05-28 台湾积体电路制造股份有限公司 光电探测器及其形成方法
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US10892373B2 (en) * 2019-02-07 2021-01-12 Newport Fab, Llc Germanium photodiode with silicon cap
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US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
CN115206940B (zh) * 2022-06-30 2024-11-29 上海韦尔半导体股份有限公司 一种用于插指形光电二极管电势分析的测试结构与测试方法

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Also Published As

Publication number Publication date
KR101627684B1 (ko) 2016-06-07
JP2012501554A (ja) 2012-01-19
WO2010025391A2 (en) 2010-03-04
US20160104812A1 (en) 2016-04-14
US8410568B2 (en) 2013-04-02
WO2010025391A3 (en) 2010-04-22
US20130334644A1 (en) 2013-12-19
JP2016157956A (ja) 2016-09-01
KR20110084876A (ko) 2011-07-26
US20100084729A1 (en) 2010-04-08
JP2014140065A (ja) 2014-07-31
KR20140127916A (ko) 2014-11-04
TW201013953A (en) 2010-04-01
US8872297B2 (en) 2014-10-28
KR101619206B1 (ko) 2016-05-18
JP6346911B2 (ja) 2018-06-20

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