TW201013953A - Integrated photodiode for semiconductor substrates - Google Patents
Integrated photodiode for semiconductor substrates Download PDFInfo
- Publication number
- TW201013953A TW201013953A TW098129125A TW98129125A TW201013953A TW 201013953 A TW201013953 A TW 201013953A TW 098129125 A TW098129125 A TW 098129125A TW 98129125 A TW98129125 A TW 98129125A TW 201013953 A TW201013953 A TW 201013953A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- type
- doped
- semiconductor substrate
- light
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 204
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000012876 topography Methods 0.000 claims abstract description 6
- 238000012360 testing method Methods 0.000 claims description 43
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 4
- 230000001960 triggered effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 1
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- 238000000034 method Methods 0.000 description 40
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- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 13
- 239000000969 carrier Substances 0.000 description 9
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- 230000003071 parasitic effect Effects 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
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- 230000002441 reversible effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
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- 238000010521 absorption reaction Methods 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 238000012938 design process Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/289—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being transparent or semi-transparent devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2218—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group IV-VI materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
Landscapes
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9329208P | 2008-08-29 | 2008-08-29 | |
| US12/547,463 US8410568B2 (en) | 2008-08-29 | 2009-08-25 | Integrated photodiode for semiconductor substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201013953A true TW201013953A (en) | 2010-04-01 |
Family
ID=41722320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098129125A TW201013953A (en) | 2008-08-29 | 2009-08-28 | Integrated photodiode for semiconductor substrates |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US8410568B2 (enExample) |
| JP (3) | JP5734854B2 (enExample) |
| KR (2) | KR101627684B1 (enExample) |
| TW (1) | TW201013953A (enExample) |
| WO (1) | WO2010025391A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8410568B2 (en) | 2008-08-29 | 2013-04-02 | Tau-Metrix, Inc. | Integrated photodiode for semiconductor substrates |
| JP5387212B2 (ja) * | 2009-07-31 | 2014-01-15 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US8787752B2 (en) * | 2009-08-21 | 2014-07-22 | California Institute Of Technology | Systems and methods for optically powering transducers and related transducers |
| US8586403B2 (en) * | 2011-02-15 | 2013-11-19 | Sunpower Corporation | Process and structures for fabrication of solar cells with laser ablation steps to form contact holes |
| US8486746B2 (en) * | 2011-03-29 | 2013-07-16 | Sunpower Corporation | Thin silicon solar cell and method of manufacture |
| US9559228B2 (en) | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
| US8992803B2 (en) | 2011-09-30 | 2015-03-31 | Sunpower Corporation | Dopant ink composition and method of fabricating a solar cell there from |
| US8586397B2 (en) | 2011-09-30 | 2013-11-19 | Sunpower Corporation | Method for forming diffusion regions in a silicon substrate |
| TWI427783B (zh) * | 2011-10-28 | 2014-02-21 | Ti Shiue Biotech Inc | 應用於分子檢測與鑑別的多接面結構之光二極體及其製造方法 |
| WO2013130257A1 (en) | 2012-03-01 | 2013-09-06 | California Institute Of Technology | Methods of modulating microlasers at ultralow power levels, and systems thereof |
| JP2015530564A (ja) | 2012-07-25 | 2015-10-15 | カリフォルニア インスティチュート オブ テクノロジー | 機能ゲート及びベース電極を有するナノピラー電界効果型及び接合型トランジスタ |
| US9252234B2 (en) * | 2012-09-06 | 2016-02-02 | International Business Machines Corporation | Partially-blocked well implant to improve diode ideality with SiGe anode |
| WO2014074180A1 (en) | 2012-11-09 | 2014-05-15 | California Institute Of Technology | Nanopillar field-effect and junction transistors |
| US11837669B2 (en) * | 2013-03-15 | 2023-12-05 | ActLight SA | Photo detector systems and methods of operating same |
| WO2014201286A1 (en) | 2013-06-12 | 2014-12-18 | Popovic Milos A | Optical modulator from standard fabrication processing |
| DE102014218772A1 (de) * | 2014-09-18 | 2016-03-24 | Technische Universität Dresden | Photovoltaisches Element |
| FR3029373B1 (fr) * | 2014-12-02 | 2018-01-12 | Sunpartner Technologies | Dispositif electronique associe a un module photovoltaique pour optimiser le debit d'une transmission bidirectionnelle de type vlc |
| US11105974B2 (en) * | 2015-06-30 | 2021-08-31 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
| CN110931578B (zh) * | 2018-09-20 | 2024-05-28 | 台湾积体电路制造股份有限公司 | 光电探测器及其形成方法 |
| EP3850665B1 (en) * | 2019-01-30 | 2023-11-15 | Yangtze Memory Technologies Co., Ltd. | Capacitor structure having vertical diffusion plates |
| US10892373B2 (en) * | 2019-02-07 | 2021-01-12 | Newport Fab, Llc | Germanium photodiode with silicon cap |
| US11251217B2 (en) * | 2019-04-17 | 2022-02-15 | ActLight SA | Photodetector sensor arrays |
| US12474453B2 (en) | 2022-01-20 | 2025-11-18 | ActLight SA | Control techniques for photodetector systems |
| CN115206940B (zh) * | 2022-06-30 | 2024-11-29 | 上海韦尔半导体股份有限公司 | 一种用于插指形光电二极管电势分析的测试结构与测试方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS5181586A (enExample) * | 1975-01-13 | 1976-07-16 | Nippon Electric Co | |
| JPS5526661A (en) * | 1978-08-15 | 1980-02-26 | Sharp Corp | Photo-semiconductor device |
| JPS57100761A (en) * | 1980-12-16 | 1982-06-23 | Fujitsu Ltd | Semiconductor light sensitive device |
| JPS6355980A (ja) * | 1986-08-26 | 1988-03-10 | Matsushita Electric Works Ltd | フオトダイオ−ドアレイの製法 |
| JPS6481522A (en) * | 1987-09-24 | 1989-03-27 | Agency Ind Science Techn | Optical control circuit and semiconductor device constituting said circuit |
| JP3029497B2 (ja) * | 1991-12-20 | 2000-04-04 | ローム株式会社 | フォトダイオードアレイおよびその製造法 |
| JPH06268247A (ja) * | 1993-03-15 | 1994-09-22 | Matsushita Electric Works Ltd | 光結合型半導体リレー |
| US5360987A (en) * | 1993-11-17 | 1994-11-01 | At&T Bell Laboratories | Semiconductor photodiode device with isolation region |
| JPH09260501A (ja) * | 1996-03-25 | 1997-10-03 | Sanyo Electric Co Ltd | ホトダイオード内蔵半導体集積回路 |
| JPH09260715A (ja) * | 1996-03-25 | 1997-10-03 | Sanyo Electric Co Ltd | ホトダイオード内蔵半導体集積回路 |
| JPH1051017A (ja) * | 1996-08-02 | 1998-02-20 | Sanyo Electric Co Ltd | 半導体装置 |
| JP2970580B2 (ja) * | 1997-03-21 | 1999-11-02 | 日本電気株式会社 | 半導体チップ、光受信モジュールおよび光受信モジュールの製造方法 |
| US6529018B1 (en) * | 1998-08-28 | 2003-03-04 | International Business Machines Corporation | Method for monitoring defects in polysilicon gates in semiconductor devices responsive to illumination by incident light |
| JP2001077400A (ja) * | 1999-08-31 | 2001-03-23 | Tokai Rika Co Ltd | 半導体フォトデバイス |
| TW419834B (en) | 1999-09-01 | 2001-01-21 | Opto Tech Corp | Photovoltaic generator |
| JP2001135849A (ja) * | 1999-11-05 | 2001-05-18 | Matsushita Electronics Industry Corp | 受光装置 |
| JP2003007975A (ja) * | 2001-06-27 | 2003-01-10 | Sony Corp | 半導体装置およびその製造方法 |
| US20030015705A1 (en) | 2001-07-17 | 2003-01-23 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices with an energy source |
| JP3859480B2 (ja) | 2001-10-17 | 2006-12-20 | 株式会社ルネサステクノロジ | 検査方法 |
| JP2004006778A (ja) * | 2002-04-04 | 2004-01-08 | Toshiba Corp | Ｍｏｓｆｅｔ、その製造方法及びそれを用いた光半導体リレー装置 |
| GB0216075D0 (en) | 2002-07-11 | 2002-08-21 | Qinetiq Ltd | Photodetector circuits |
| KR20040057238A (ko) | 2002-12-26 | 2004-07-02 | 삼성전기주식회사 | 포토다이오드, 이를 구비한 광전자 집적회로장치 및 그제조방법 |
| JP2005086063A (ja) | 2003-09-10 | 2005-03-31 | Keio Gijuku | フォトダイオード及び集積化光受信器 |
| JP2005158834A (ja) | 2003-11-21 | 2005-06-16 | Sanyo Electric Co Ltd | 光半導体装置 |
| TWI226137B (en) | 2004-01-09 | 2005-01-01 | Integrated Crystal Technology | Structure of dual-pad high speed photodiode |
| US7535089B2 (en) | 2005-11-01 | 2009-05-19 | Massachusetts Institute Of Technology | Monolithically integrated light emitting devices |
| US7928317B2 (en) * | 2006-06-05 | 2011-04-19 | Translucent, Inc. | Thin film solar cell |
| US8410568B2 (en) | 2008-08-29 | 2013-04-02 | Tau-Metrix, Inc. | Integrated photodiode for semiconductor substrates |
-
2009
- 2009-08-25 US US12/547,463 patent/US8410568B2/en not_active Expired - Fee Related
- 2009-08-28 TW TW098129125A patent/TW201013953A/zh unknown
- 2009-08-28 KR KR1020117007285A patent/KR101627684B1/ko not_active Expired - Fee Related
- 2009-08-28 JP JP2011525243A patent/JP5734854B2/ja not_active Expired - Fee Related
- 2009-08-28 KR KR1020147027667A patent/KR101619206B1/ko not_active Expired - Fee Related
- 2009-08-28 WO PCT/US2009/055408 patent/WO2010025391A2/en not_active Ceased
-
2013
- 2013-02-28 US US13/781,437 patent/US8872297B2/en not_active Expired - Fee Related
-
2014
- 2014-04-01 JP JP2014075479A patent/JP2014140065A/ja active Pending
- 2014-10-23 US US14/522,175 patent/US20160104812A1/en not_active Abandoned
-
2016
- 2016-03-24 JP JP2016060064A patent/JP6346911B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101627684B1 (ko) | 2016-06-07 |
| JP2012501554A (ja) | 2012-01-19 |
| WO2010025391A2 (en) | 2010-03-04 |
| US20160104812A1 (en) | 2016-04-14 |
| US8410568B2 (en) | 2013-04-02 |
| JP5734854B2 (ja) | 2015-06-17 |
| WO2010025391A3 (en) | 2010-04-22 |
| US20130334644A1 (en) | 2013-12-19 |
| JP2016157956A (ja) | 2016-09-01 |
| KR20110084876A (ko) | 2011-07-26 |
| US20100084729A1 (en) | 2010-04-08 |
| JP2014140065A (ja) | 2014-07-31 |
| KR20140127916A (ko) | 2014-11-04 |
| US8872297B2 (en) | 2014-10-28 |
| KR101619206B1 (ko) | 2016-05-18 |
| JP6346911B2 (ja) | 2018-06-20 |
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