JP2014140065A5 - - Google Patents

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Publication number
JP2014140065A5
JP2014140065A5 JP2014075479A JP2014075479A JP2014140065A5 JP 2014140065 A5 JP2014140065 A5 JP 2014140065A5 JP 2014075479 A JP2014075479 A JP 2014075479A JP 2014075479 A JP2014075479 A JP 2014075479A JP 2014140065 A5 JP2014140065 A5 JP 2014140065A5
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JP
Japan
Prior art keywords
substrate
photodiode
region
type
substrate according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014075479A
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English (en)
Japanese (ja)
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JP2014140065A (ja
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Publication of JP2014140065A publication Critical patent/JP2014140065A/ja
Publication of JP2014140065A5 publication Critical patent/JP2014140065A5/ja
Pending legal-status Critical Current

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JP2014075479A 2008-08-29 2014-04-01 半導体基板用集積フォトダイオード Pending JP2014140065A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9329208P 2008-08-29 2008-08-29
US61/093,292 2008-08-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2011525243A Division JP5734854B2 (ja) 2008-08-29 2009-08-28 半導体基板用集積フォトダイオード

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016060064A Division JP6346911B2 (ja) 2008-08-29 2016-03-24 半導体基板用集積フォトダイオード

Publications (2)

Publication Number Publication Date
JP2014140065A JP2014140065A (ja) 2014-07-31
JP2014140065A5 true JP2014140065A5 (enExample) 2015-04-02

Family

ID=41722320

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011525243A Expired - Fee Related JP5734854B2 (ja) 2008-08-29 2009-08-28 半導体基板用集積フォトダイオード
JP2014075479A Pending JP2014140065A (ja) 2008-08-29 2014-04-01 半導体基板用集積フォトダイオード
JP2016060064A Expired - Fee Related JP6346911B2 (ja) 2008-08-29 2016-03-24 半導体基板用集積フォトダイオード

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2011525243A Expired - Fee Related JP5734854B2 (ja) 2008-08-29 2009-08-28 半導体基板用集積フォトダイオード

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016060064A Expired - Fee Related JP6346911B2 (ja) 2008-08-29 2016-03-24 半導体基板用集積フォトダイオード

Country Status (5)

Country Link
US (3) US8410568B2 (enExample)
JP (3) JP5734854B2 (enExample)
KR (2) KR101627684B1 (enExample)
TW (1) TW201013953A (enExample)
WO (1) WO2010025391A2 (enExample)

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US8410568B2 (en) 2008-08-29 2013-04-02 Tau-Metrix, Inc. Integrated photodiode for semiconductor substrates
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US8787752B2 (en) * 2009-08-21 2014-07-22 California Institute Of Technology Systems and methods for optically powering transducers and related transducers
US8586403B2 (en) * 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8486746B2 (en) * 2011-03-29 2013-07-16 Sunpower Corporation Thin silicon solar cell and method of manufacture
US9559228B2 (en) 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
US8992803B2 (en) 2011-09-30 2015-03-31 Sunpower Corporation Dopant ink composition and method of fabricating a solar cell there from
US8586397B2 (en) 2011-09-30 2013-11-19 Sunpower Corporation Method for forming diffusion regions in a silicon substrate
TWI427783B (zh) * 2011-10-28 2014-02-21 Ti Shiue Biotech Inc 應用於分子檢測與鑑別的多接面結構之光二極體及其製造方法
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EP3850665B1 (en) * 2019-01-30 2023-11-15 Yangtze Memory Technologies Co., Ltd. Capacitor structure having vertical diffusion plates
US10892373B2 (en) * 2019-02-07 2021-01-12 Newport Fab, Llc Germanium photodiode with silicon cap
US11251217B2 (en) * 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
CN115206940B (zh) * 2022-06-30 2024-11-29 上海韦尔半导体股份有限公司 一种用于插指形光电二极管电势分析的测试结构与测试方法

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