MX362141B - Fabricacion de una region del emisor de celdas solares mediante el uso de implantacion ionica. - Google Patents

Fabricacion de una region del emisor de celdas solares mediante el uso de implantacion ionica.

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Publication number
MX362141B
MX362141B MX2016012877A MX2016012877A MX362141B MX 362141 B MX362141 B MX 362141B MX 2016012877 A MX2016012877 A MX 2016012877A MX 2016012877 A MX2016012877 A MX 2016012877A MX 362141 B MX362141 B MX 362141B
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MX
Mexico
Prior art keywords
emitter region
polycrystalline silicon
solar cell
ion implantation
impurity species
Prior art date
Application number
MX2016012877A
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English (en)
Other versions
MX2016012877A (es
Inventor
Ad Smith Dvid
Weidman Timothy
Westerberg Staffan
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of MX2016012877A publication Critical patent/MX2016012877A/es
Publication of MX362141B publication Critical patent/MX362141B/es

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    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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Abstract

Se describen métodos para fabricar regiones del emisor de celdas solares mediante el uso de implantación iónica y las celdas solares resultantes. En un ejemplo, una celda solar de contacto posterior incluye un sustrato de silicio cristalino que tiene una superficie que recibe luz y una superficie posterior. La primera región del emisor de silicio policristalino está dispuesta sobre el sustrato de silicio cristalino. La primera región del emisor de silicio policristalino se dopa con las especies de impureza del dopante de un primer tipo de conductividad e incluye, además, las especies de impureza adicionales diferentes de las especies de impureza del dopante del primer tipo de conductividad. Una segunda región del emisor de silicio policristalino se dispone por encima del sustrato de silicio cristalino y es adyacente a pero separada de la primera región del emisor de silicio policristalino. La segunda región del emisor de silicio policristalino está dopada con las especies de impureza de dopante de un segundo tipo de conductividad opuesto. La primera y segunda estructuras de contacto conductoras están eléctricamente conectadas con la primera segunda regiones del emisor de silicio policristalino, respectivamente.
MX2016012877A 2014-06-30 2015-06-24 Fabricacion de una region del emisor de celdas solares mediante el uso de implantacion ionica. MX362141B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/320,438 US9263625B2 (en) 2014-06-30 2014-06-30 Solar cell emitter region fabrication using ion implantation
PCT/US2015/037523 WO2016003741A1 (en) 2014-06-30 2015-06-24 Solar cell emitter region fabrication using ion implantation

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MX2016012877A MX2016012877A (es) 2016-12-07
MX362141B true MX362141B (es) 2019-01-07

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US (2) US9263625B2 (es)
EP (1) EP3161879B1 (es)
JP (1) JP6552011B2 (es)
KR (1) KR102482564B1 (es)
CN (1) CN107155377B (es)
AU (2) AU2015284552B2 (es)
CL (1) CL2016003360A1 (es)
MX (1) MX362141B (es)
PH (1) PH12016502161A1 (es)
SA (1) SA516380625B1 (es)
SG (1) SG11201610779RA (es)
TW (2) TWI686957B (es)
WO (1) WO2016003741A1 (es)
ZA (1) ZA201700071B (es)

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US9401450B2 (en) 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US20160284913A1 (en) * 2015-03-27 2016-09-29 Staffan WESTERBERG Solar cell emitter region fabrication using substrate-level ion implantation
CN105977205B (zh) * 2016-05-10 2019-10-15 京东方科技集团股份有限公司 薄膜晶体管、阵列基板的制备方法、阵列基板及显示装置
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
WO2018078667A1 (ja) * 2016-10-25 2018-05-03 信越化学工業株式会社 高光電変換効率太陽電池及び高光電変換効率太陽電池の製造方法
FR3062514A1 (fr) 2017-02-02 2018-08-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Formation de reliefs a la surface d'un substrat
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