CL2016003360A1 - Fabricación de una región del emisor de celdas solares mediante el uso de implantación iónica - Google Patents

Fabricación de una región del emisor de celdas solares mediante el uso de implantación iónica

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Publication number
CL2016003360A1
CL2016003360A1 CL2016003360A CL2016003360A CL2016003360A1 CL 2016003360 A1 CL2016003360 A1 CL 2016003360A1 CL 2016003360 A CL2016003360 A CL 2016003360A CL 2016003360 A CL2016003360 A CL 2016003360A CL 2016003360 A1 CL2016003360 A1 CL 2016003360A1
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CL
Chile
Prior art keywords
issuer
region
silicon
polycystalline
solar cell
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CL2016003360A
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English (en)
Inventor
David D Smith
Timothy Weidman
Staffan Westerberg
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Sunpower Corp
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Publication of CL2016003360A1 publication Critical patent/CL2016003360A1/es

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
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Abstract

<p>SE DESCRIBEN MÉTODOS PARA FABRICAR REGIONES DEL EMISOR DE CELDAS SOLARES MEDIANTE EL USO DE IMPLANTACIÓN IÓNICA Y LAS CELDAS SOLARES RESULTANTES. EN UN EJEMPLO, UNA CELDA SOLAR DE CONTACTO POSTERIOR INCLUYE UN SUSTRATO DE SILICIO CRISTALINO QUE TIENE UNA SUPERFICIE QUE RECIBE LUZ Y UNA SUPERFICIE POSTERIOR. LA PRIMERA REGIÓN DEL EMISOR DE SILICIO POLICRISTALINO ESTÁ DISPUESTA SOBRE EL SUSTRATO DE SILICIO CRISTALINO. LA PRIMERA REGIÓN DEL EMISOR DE SILICIO POIICRISTALINO SE DOPA CON LAS ESPECIES DE IMPUREZA DEL DOPANTE DE UN PRIMER TIPO DE CONDUCTIVIDAD E INCLUYE, ADEMÁS, LAS ESPECIES DE IMPUREZA ADICIONALES DIFERENTES DE LAS ESPECIES DE IMPUREZA DEI DOPANTE DEL PRIMER TIPO DE CONDUCTIVIDAD. UNA SEGUNDA REGIÓN DEL EMISOR DE SILICIO POLICRISTALINO SE DISPONE POR ENCIMA DEL SUSTRATO DE SILICIO CRISTALINO Y ES ADYACENTE A PERO SEPARADA DE IA PRIMERA REGIÓN DEL EMISOR DE SILICIO POLICRISTALINO. LA SEGUNDA REGIÓN DEL EMISOR DE SILICIO POLICRISTALINO ESTA DOPADA CON LAS ESPECIES DE IMPUREZA DE DOPANTE DE UN SEGUNDO TIPO DE CONDUCTIVIDAD OPUESTO. LA PRIMERA Y SEGUNDA ESTRUCTURAS DE CONTACTO CONDUCTORAS ESTÁN ELECTRICAMENTE CONECTADAS CON LA PRIMERA SEGUNDA REGIONES DEL EMISOR DE SILICIO POLICRISTALINO, RESPECTIVAMENTE.</p>
CL2016003360A 2014-06-30 2016-12-28 Fabricación de una región del emisor de celdas solares mediante el uso de implantación iónica CL2016003360A1 (es)

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US14/320,438 US9263625B2 (en) 2014-06-30 2014-06-30 Solar cell emitter region fabrication using ion implantation

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CL2016003360A1 true CL2016003360A1 (es) 2017-07-07

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US (2) US9263625B2 (es)
EP (1) EP3161879B1 (es)
JP (1) JP6552011B2 (es)
KR (1) KR102482564B1 (es)
CN (1) CN107155377B (es)
AU (2) AU2015284552B2 (es)
CL (1) CL2016003360A1 (es)
MX (1) MX362141B (es)
PH (1) PH12016502161A1 (es)
SA (1) SA516380625B1 (es)
SG (1) SG11201610779RA (es)
TW (2) TWI743663B (es)
WO (1) WO2016003741A1 (es)
ZA (1) ZA201700071B (es)

Families Citing this family (19)

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Publication number Priority date Publication date Assignee Title
US9401450B2 (en) 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US20160284913A1 (en) * 2015-03-27 2016-09-29 Staffan WESTERBERG Solar cell emitter region fabrication using substrate-level ion implantation
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