SG11201610779RA - Solar cell emitter region fabrication using ion implantation - Google Patents
Solar cell emitter region fabrication using ion implantationInfo
- Publication number
- SG11201610779RA SG11201610779RA SG11201610779RA SG11201610779RA SG11201610779RA SG 11201610779R A SG11201610779R A SG 11201610779RA SG 11201610779R A SG11201610779R A SG 11201610779RA SG 11201610779R A SG11201610779R A SG 11201610779RA SG 11201610779R A SG11201610779R A SG 11201610779RA
- Authority
- SG
- Singapore
- Prior art keywords
- solar cell
- ion implantation
- emitter region
- cell emitter
- region fabrication
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US14/320,438 US9263625B2 (en) | 2014-06-30 | 2014-06-30 | Solar cell emitter region fabrication using ion implantation |
PCT/US2015/037523 WO2016003741A1 (en) | 2014-06-30 | 2015-06-24 | Solar cell emitter region fabrication using ion implantation |
Publications (1)
Publication Number | Publication Date |
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SG11201610779RA true SG11201610779RA (en) | 2017-01-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SG11201610779RA SG11201610779RA (en) | 2014-06-30 | 2015-06-24 | Solar cell emitter region fabrication using ion implantation |
Country Status (14)
Country | Link |
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US (2) | US9263625B2 (es) |
EP (1) | EP3161879B1 (es) |
JP (1) | JP6552011B2 (es) |
KR (1) | KR102482564B1 (es) |
CN (1) | CN107155377B (es) |
AU (2) | AU2015284552B2 (es) |
CL (1) | CL2016003360A1 (es) |
MX (1) | MX362141B (es) |
PH (1) | PH12016502161A1 (es) |
SA (1) | SA516380625B1 (es) |
SG (1) | SG11201610779RA (es) |
TW (2) | TWI686957B (es) |
WO (1) | WO2016003741A1 (es) |
ZA (1) | ZA201700071B (es) |
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US9401450B2 (en) | 2013-12-09 | 2016-07-26 | Sunpower Corporation | Solar cell emitter region fabrication using ion implantation |
US20160284913A1 (en) * | 2015-03-27 | 2016-09-29 | Staffan WESTERBERG | Solar cell emitter region fabrication using substrate-level ion implantation |
CN105977205B (zh) * | 2016-05-10 | 2019-10-15 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板的制备方法、阵列基板及显示装置 |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
WO2018078667A1 (ja) * | 2016-10-25 | 2018-05-03 | 信越化学工業株式会社 | 高光電変換効率太陽電池及び高光電変換効率太陽電池の製造方法 |
FR3062514A1 (fr) | 2017-02-02 | 2018-08-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Formation de reliefs a la surface d'un substrat |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
CN110010451A (zh) * | 2018-01-05 | 2019-07-12 | 上海凯世通半导体股份有限公司 | 掺杂方法 |
FR3124640B1 (fr) * | 2021-06-28 | 2024-06-28 | Commissariat Energie Atomique | Procede de realisation d’une cellule photovoltaïque a contacts passives |
CN115224137B (zh) * | 2022-06-21 | 2023-09-15 | 浙江晶科能源有限公司 | 半导体衬底及太阳能电池和光伏组件 |
CN115985975A (zh) * | 2023-02-02 | 2023-04-18 | 浙江晶科能源有限公司 | 太阳能电池和光伏组件 |
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-
2014
- 2014-06-30 US US14/320,438 patent/US9263625B2/en active Active
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ZA201700071B (en) | 2018-11-28 |
CL2016003360A1 (es) | 2017-07-07 |
US9577126B2 (en) | 2017-02-21 |
EP3161879B1 (en) | 2021-04-14 |
KR20170028370A (ko) | 2017-03-13 |
JP6552011B2 (ja) | 2019-07-31 |
US20160133767A1 (en) | 2016-05-12 |
TWI686957B (zh) | 2020-03-01 |
TWI743663B (zh) | 2021-10-21 |
US20150380599A1 (en) | 2015-12-31 |
AU2015284552A1 (en) | 2016-09-22 |
KR102482564B1 (ko) | 2022-12-28 |
WO2016003741A1 (en) | 2016-01-07 |
JP2017525126A (ja) | 2017-08-31 |
CN107155377B (zh) | 2019-05-21 |
AU2020277220B2 (en) | 2023-01-05 |
CN107155377A (zh) | 2017-09-12 |
AU2015284552B2 (en) | 2020-08-27 |
SA516380625B1 (ar) | 2021-09-26 |
PH12016502161A1 (en) | 2017-02-06 |
AU2020277220A1 (en) | 2020-12-24 |
TW202027286A (zh) | 2020-07-16 |
MX2016012877A (es) | 2016-12-07 |
EP3161879A1 (en) | 2017-05-03 |
TW201618316A (zh) | 2016-05-16 |
MX362141B (es) | 2019-01-07 |
US9263625B2 (en) | 2016-02-16 |
EP3161879A4 (en) | 2017-07-05 |
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