SG11201608033RA - Solar cell with trench-free emitter regions - Google Patents

Solar cell with trench-free emitter regions

Info

Publication number
SG11201608033RA
SG11201608033RA SG11201608033RA SG11201608033RA SG11201608033RA SG 11201608033R A SG11201608033R A SG 11201608033RA SG 11201608033R A SG11201608033R A SG 11201608033RA SG 11201608033R A SG11201608033R A SG 11201608033RA SG 11201608033R A SG11201608033R A SG 11201608033RA
Authority
SG
Singapore
Prior art keywords
trench
solar cell
emitter regions
free emitter
free
Prior art date
Application number
SG11201608033RA
Inventor
David D Smith
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of SG11201608033RA publication Critical patent/SG11201608033RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electromechanical Clocks (AREA)
SG11201608033RA 2014-03-27 2015-03-24 Solar cell with trench-free emitter regions SG11201608033RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/227,965 US20150280043A1 (en) 2014-03-27 2014-03-27 Solar cell with trench-free emitter regions
PCT/US2015/022333 WO2015148570A1 (en) 2014-03-27 2015-03-24 Solar cell with trench-free emitter regions

Publications (1)

Publication Number Publication Date
SG11201608033RA true SG11201608033RA (en) 2016-10-28

Family

ID=54191561

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608033RA SG11201608033RA (en) 2014-03-27 2015-03-24 Solar cell with trench-free emitter regions

Country Status (13)

Country Link
US (1) US20150280043A1 (en)
EP (1) EP3123527B1 (en)
JP (2) JP2017511593A (en)
KR (2) KR20160137595A (en)
CN (2) CN110246910A (en)
AU (3) AU2015236205A1 (en)
ES (1) ES2920425T3 (en)
MX (1) MX2016011536A (en)
MY (1) MY192045A (en)
PH (1) PH12016501667A1 (en)
SG (1) SG11201608033RA (en)
TW (1) TWI667798B (en)
WO (1) WO2015148570A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150349180A1 (en) * 2014-05-30 2015-12-03 David D. Smith Relative dopant concentration levels in solar cells
US9559236B2 (en) * 2014-09-24 2017-01-31 Sunpower Corporation Solar cell fabricated by simplified deposition process
NL2016382B1 (en) * 2016-03-07 2017-09-19 Stichting Energieonderzoek Centrum Nederland Method for manufacturing a solar cell with doped polysilicon surface areas
JP2018046177A (en) * 2016-09-15 2018-03-22 株式会社アルバック Method of manufacturing solar cell
NL2017872B1 (en) * 2016-11-25 2018-06-08 Stichting Energieonderzoek Centrum Nederland Photovoltaic cell with passivating contact
WO2021119092A1 (en) * 2019-12-09 2021-06-17 Pacific Integrated Energy, Inc. Thin-film crystalline silicon solar cell using a nanoimprinted photonic-plasmonic back-reflector structure
CN111952417A (en) 2020-08-24 2020-11-17 晶科绿能(上海)管理有限公司 Solar cell and preparation method thereof

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004086343A1 (en) * 2003-03-26 2004-10-07 Semiconductor Energy Laboratory Co., Ltd. Device substrate and light-emitting device
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
WO2006104107A1 (en) * 2005-03-29 2006-10-05 Kyocera Corporation Polycrystalline silicon substrate, method for producing same, polycrystalline silicon ingot, photoelectric converter and photoelectric conversion module
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7718888B2 (en) * 2005-12-30 2010-05-18 Sunpower Corporation Solar cell having polymer heterojunction contacts
JP4630294B2 (en) * 2007-01-29 2011-02-09 シャープ株式会社 Photoelectric conversion device and manufacturing method thereof
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
KR101000064B1 (en) * 2007-12-18 2010-12-10 엘지전자 주식회사 Hetero-junction silicon solar cell and fabrication method thereof
US8461032B2 (en) * 2008-03-05 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Use of dopants with different diffusivities for solar cell manufacture
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US7951696B2 (en) * 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8465909B2 (en) * 2009-11-04 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Self-aligned masking for solar cell manufacture
US8735234B2 (en) * 2010-02-18 2014-05-27 Varian Semiconductor Equipment Associates, Inc. Self-aligned ion implantation for IBC solar cells
US20120073650A1 (en) * 2010-09-24 2012-03-29 David Smith Method of fabricating an emitter region of a solar cell
US8492253B2 (en) * 2010-12-02 2013-07-23 Sunpower Corporation Method of forming contacts for a back-contact solar cell
WO2012132615A1 (en) * 2011-03-25 2012-10-04 三洋電機株式会社 Photoelectric converter, and method for producing same
US8802486B2 (en) * 2011-04-25 2014-08-12 Sunpower Corporation Method of forming emitters for a back-contact solar cell
US8658458B2 (en) * 2011-06-15 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Patterned doping for polysilicon emitter solar cells
US9190548B2 (en) * 2011-10-11 2015-11-17 Varian Semiconductor Equipment Associates, Inc. Method of creating two dimensional doping patterns in solar cells
US9412895B2 (en) * 2012-04-04 2016-08-09 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device
US8993373B2 (en) * 2012-05-04 2015-03-31 Varian Semiconductor Equipment Associates, Inc. Doping pattern for point contact solar cells
KR101879781B1 (en) * 2012-05-11 2018-08-16 엘지전자 주식회사 Solar cell, method for manufacturing dopant layer, and method for manufacturing solar cell
CN102800716B (en) * 2012-07-09 2015-06-17 友达光电股份有限公司 Solar battery and manufacturing method thereof

Also Published As

Publication number Publication date
US20150280043A1 (en) 2015-10-01
MY192045A (en) 2022-07-24
AU2015236205A1 (en) 2016-06-16
EP3123527A1 (en) 2017-02-01
WO2015148570A1 (en) 2015-10-01
MX2016011536A (en) 2016-11-29
PH12016501667A1 (en) 2016-11-07
AU2021225181A1 (en) 2021-09-30
TWI667798B (en) 2019-08-01
CN110246910A (en) 2019-09-17
CN105981182B (en) 2019-04-19
ES2920425T3 (en) 2022-08-03
CN105981182A (en) 2016-09-28
TW201603296A (en) 2016-01-16
KR20160137595A (en) 2016-11-30
EP3123527B1 (en) 2022-05-11
AU2019283942A1 (en) 2020-01-23
JP2017511593A (en) 2017-04-20
AU2021225181B2 (en) 2023-08-31
KR20230069256A (en) 2023-05-18
JP2021185625A (en) 2021-12-09
EP3123527A4 (en) 2017-04-05

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