WO2011087341A3 - 후면전극형 태양전지의 제조방법 - Google Patents

후면전극형 태양전지의 제조방법 Download PDF

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Publication number
WO2011087341A3
WO2011087341A3 PCT/KR2011/000354 KR2011000354W WO2011087341A3 WO 2011087341 A3 WO2011087341 A3 WO 2011087341A3 KR 2011000354 W KR2011000354 W KR 2011000354W WO 2011087341 A3 WO2011087341 A3 WO 2011087341A3
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Prior art keywords
substrate
thermal diffusion
fabricating
region
solar cell
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PCT/KR2011/000354
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English (en)
French (fr)
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WO2011087341A2 (ko
Inventor
전민성
이원재
조은철
이준성
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현대중공업 주식회사
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Application filed by 현대중공업 주식회사 filed Critical 현대중공업 주식회사
Priority to US13/519,249 priority Critical patent/US8461011B2/en
Priority to JP2012547035A priority patent/JP5518212B2/ja
Priority to EP11733128.0A priority patent/EP2528105A4/en
Priority to CN201180007151.4A priority patent/CN102725867B/zh
Publication of WO2011087341A2 publication Critical patent/WO2011087341A2/ko
Publication of WO2011087341A3 publication Critical patent/WO2011087341A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 기판 후면부에 p+ 영역과 n+ 영역을 형성함에 있어 이온주입 공정과 열확산 공정을 접목시켜 공정 횟수를 최소화할 수 있는 후면전극형 태양전지의 제조방법에 관한 것으로서, 본 발명에 따른 후면전극형 태양전지의 제조방법은 n형의 결정질 실리콘 기판을 준비하는 단계와, 상기 기판의 전면, 후면 및 측면 상에 열확산 제어막을 형성하는 단계와, 상기 기판의 후면 상에 p형 불순물 이온을 이온주입하여 p형 불순물 영역을 형성하는 단계와, 상기 기판 후면이 선택적으로 노출되도록 상기 열확산 제어막을 패터닝하는 단계 및 열확산 공정을 실시하여 노출된 기판 후면 영역에 고농도 후면전계층(n+)을 형성함과 함께 상기 기판 전면부에 저농도 전면전계층(n-)을 형성하고, 상기 p형 불순물 영역을 활성화시켜 p+ 에미터 영역을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.
PCT/KR2011/000354 2010-01-18 2011-01-18 후면전극형 태양전지의 제조방법 WO2011087341A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/519,249 US8461011B2 (en) 2010-01-18 2011-01-18 Method for fabricating a back contact solar cell
JP2012547035A JP5518212B2 (ja) 2010-01-18 2011-01-18 裏面電極型の太陽電池の製造方法
EP11733128.0A EP2528105A4 (en) 2010-01-18 2011-01-18 METHOD FOR PRODUCING A SOLAR CELL WITH BACK CONTACT
CN201180007151.4A CN102725867B (zh) 2010-01-18 2011-01-18 背面接触太阳能电池的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0004272 2010-01-18
KR1020100004272A KR101027829B1 (ko) 2010-01-18 2010-01-18 후면전극형 태양전지의 제조방법

Publications (2)

Publication Number Publication Date
WO2011087341A2 WO2011087341A2 (ko) 2011-07-21
WO2011087341A3 true WO2011087341A3 (ko) 2011-12-08

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Application Number Title Priority Date Filing Date
PCT/KR2011/000354 WO2011087341A2 (ko) 2010-01-18 2011-01-18 후면전극형 태양전지의 제조방법

Country Status (6)

Country Link
US (1) US8461011B2 (ko)
EP (1) EP2528105A4 (ko)
JP (1) JP5518212B2 (ko)
KR (1) KR101027829B1 (ko)
CN (1) CN102725867B (ko)
WO (1) WO2011087341A2 (ko)

Cited By (1)

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CN103560168A (zh) * 2013-10-23 2014-02-05 中电电气（扬州）光伏有限公司 Perc太阳能电池的制备工艺

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JP5723143B2 (ja) * 2010-12-06 2015-05-27 シャープ株式会社 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池
CN102832263B (zh) * 2011-06-15 2015-01-14 茂迪股份有限公司 具有背电场结构的太阳能电池及其制造方法
KR20130062775A (ko) 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101875747B1 (ko) * 2011-12-16 2018-07-06 엘지전자 주식회사 태양 전지의 제조 방법
KR101958819B1 (ko) * 2012-01-27 2019-03-15 엘지전자 주식회사 양면 수광형 태양전지의 제조 방법
KR101345506B1 (ko) * 2012-02-01 2013-12-27 현대중공업 주식회사 후면전극형 태양전지 및 그 제조방법
KR101872786B1 (ko) * 2012-06-22 2018-06-29 엘지전자 주식회사 태양 전지의 불순물층 형성 방법 및 태양 전지의 제조 방법
US8901010B2 (en) * 2013-03-15 2014-12-02 Sunpower Corporation Methods for improving solar cell lifetime and efficiency
CN103367539B (zh) * 2013-06-26 2015-09-09 英利集团有限公司 Ibc太阳能电池的制作方法及ibc太阳能电池
CN103311376A (zh) * 2013-06-26 2013-09-18 英利集团有限公司 一种n型太阳能电池的制作方法
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KR101661807B1 (ko) * 2014-07-28 2016-09-30 엘지전자 주식회사 태양 전지 및 그 제조 방법
DE102014215893A1 (de) * 2014-08-11 2016-02-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen von Dotierbereichen in einer Halbleiterschicht eines Halbleiterbauelementes
CN105702797A (zh) * 2014-11-27 2016-06-22 上海晶玺电子科技有限公司 双面电池的制作方法
KR102320551B1 (ko) * 2015-01-16 2021-11-01 엘지전자 주식회사 태양 전지의 제조 방법
US20160284913A1 (en) * 2015-03-27 2016-09-29 Staffan WESTERBERG Solar cell emitter region fabrication using substrate-level ion implantation
CN104752567A (zh) * 2015-04-24 2015-07-01 中建材浚鑫科技股份有限公司 降温推结扩散工艺
KR101680036B1 (ko) * 2015-07-07 2016-12-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
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KR102657230B1 (ko) * 2016-11-04 2024-04-12 오씨아이 주식회사 태양 전지 및 이의 제조 방법
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Also Published As

Publication number Publication date
JP2013516082A (ja) 2013-05-09
US8461011B2 (en) 2013-06-11
JP5518212B2 (ja) 2014-06-11
EP2528105A2 (en) 2012-11-28
CN102725867B (zh) 2015-03-25
KR101027829B1 (ko) 2011-04-07
US20120282732A1 (en) 2012-11-08
EP2528105A4 (en) 2015-08-19
CN102725867A (zh) 2012-10-10
WO2011087341A2 (ko) 2011-07-21

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