US8461011B2 - Method for fabricating a back contact solar cell - Google Patents

Method for fabricating a back contact solar cell Download PDF

Info

Publication number
US8461011B2
US8461011B2 US13/519,249 US201113519249A US8461011B2 US 8461011 B2 US8461011 B2 US 8461011B2 US 201113519249 A US201113519249 A US 201113519249A US 8461011 B2 US8461011 B2 US 8461011B2
Authority
US
United States
Prior art keywords
substrate
thermal diffusion
region
solar cell
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US13/519,249
Other versions
US20120282732A1 (en
Inventor
Min Sung Jeon
Won Jae Lee
Eun Chel Cho
Joon Sung Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HD Hyundai Heavy Industries Co Ltd
Original Assignee
Hyundai Heavy Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Heavy Industries Co Ltd filed Critical Hyundai Heavy Industries Co Ltd
Assigned to HYUNDAI HEAVY INDUSTRIES CO., LTD. reassignment HYUNDAI HEAVY INDUSTRIES CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHO, EUN CHEL, LEE, JOON SUNG, JEON, MIN SUNG, LEE, WON JAE
Publication of US20120282732A1 publication Critical patent/US20120282732A1/en
Application granted granted Critical
Publication of US8461011B2 publication Critical patent/US8461011B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to a method for manufacturing a back electrode-type solar cell, and more particularly, to a method for manufacturing a back electrode-type solar cell, which may minimize the number of processes by grafting a doping process using ion implantation and a thermal diffusion process when forming a p+ region and an n+ region at the back surface of a substrate.
  • a solar cell is a core element of solar-light power generation, which directly transforms solar light into electricity, and it may be basically considered as a diode having a p-n junction.
  • Solar light is transformed into electricity by a solar cell as follows. If solar light is incident to a p-n junction of a solar cell, an electron-hole pair is generated, and due to the electric field, electrons move to an n layer and holes move to a p layer, thereby generating photoelectromotive force between the p-n junctions. In this way, if a load or system is connected to both terminals of the solar cell, an electric power may flow to generate power.
  • a general solar cell is configured to have a front surface and a back electrode respectively at front and back surfaces of the solar cell. Since the front electrode is provided to the front surface which is a light-receiving surface, the light-receiving area decreases as much as the area of the front electrode. In order to solve the decrease of the light-receiving area, a back electrode-type solar cell has been proposed.
  • the back electrode-type solar cell maximizes the light-receiving area of the front surface of the solar cell by providing a (+) electrode and a ( ⁇ ) electrode on a back surface of the solar cell.
  • FIG. 1 is a cross-sectional view showing a back electrode-type solar cell proposed in U.S. Pat. No. 7,339,110.
  • a p+ region where p-type impurity ions are implanted and a n+ region where n-type impurity ions are implanted by thermal diffusion are provided at the back surface of a silicon substrate, and interdigitated metal electrodes 50 , 52 are provided on the p+ region and the n+ region.
  • thermal diffusion processes are respectively performed to form a p+ region and an n+ region, and an oxide film generated by each thermal diffusion process should be removed.
  • a process of selectively patterning an oxide film generated when the p+ region is formed is added.
  • the present disclosure is designed to solve the above problem and the present disclosure is directed to providing a method for manufacturing a back electrode-type solar cell, which may minimize the number of processes by grafting a doping process using ion implantation and a thermal diffusion process when forming a p+ region and an n+ region at the back surface of a substrate.
  • the present disclosure provides a method for manufacturing a back electrode-type solar cell, which includes: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n ⁇ ) at the front surface of the substrate by performing a thermal diffusion process, and activating the p-type impurity region to form a p+ emitter region.
  • the thermal diffusion control film and a predetermined depth of the substrate may be removed at a region where the high-concentration back field layer (n+) is to be formed.
  • laser may be irradiated onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed so that the thermal diffusion control film and the predetermined depth of the substrate are removed
  • an etching paste may be applied onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed so that the thermal diffusion control film and the predetermined depth of the substrate are removed, or the thermal diffusion control film and the predetermined depth of the substrate may be removed by means of reactive ion etching at a region where the high-concentration back field layer (n+) is to
  • the present disclosure provides a method for manufacturing a back electrode-type solar cell, which includes: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; forming an anti-diffusion film on the back surface of the substrate; patterning the thermal diffusion control film and the anti-diffusion film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n ⁇ ) at the front surface of the substrate by performing a thermal diffusion process, and activating the p-type impurity region to form a p+ emitter region.
  • the thickness of the thermal diffusion control film formed at the front surface of the substrate may be relatively smaller than that of the thermal diffusion control films formed at the back surface and the side surface of the substrate.
  • the p+ emitter region may have a sheet resistance of 10 to 60 ⁇ /sq.
  • the high-concentration back field layer (n+) may have a sheet resistance of 10 to 80 ⁇ /sq.
  • the low-concentration front field layer (n ⁇ ) may have a sheet resistance of 50 to 150 ⁇ /sq.
  • the method for manufacturing a back electrode-type solar cell according to the present disclosure gives the following effects.
  • a back surface field may be easily formed by a single ion implantation process and a single thermal diffusion process, and the patterning work may be minimized.
  • FIG. 1 is a diagram showing a conventional back electrode-type solar cell
  • FIG. 2 is a flowchart for illustrating a method for manufacturing a back electrode-type solar cell according to a first embodiment of the present disclosure
  • FIGS. 3 a to 3 f are cross-sectional views for illustrating the method for manufacturing a back electrode-type solar cell according to the first embodiment of the present disclosure.
  • FIGS. 4 a to 4 g are cross-sectional views for illustrating the method for manufacturing a back electrode-type solar cell according to a second embodiment of the present disclosure.
  • FIG. 2 is a flowchart for illustrating a method for manufacturing a back electrode-type solar cell according to a first embodiment of the present disclosure
  • FIGS. 3 a to 3 f are cross-sectional views for illustrating the method for manufacturing a back electrode-type solar cell according to the first embodiment of the present disclosure.
  • a first conductive crystalline silicon substrate 301 is prepared (S 201 ), and a texturing process is performed to form unevenness 302 on the surface of the first conductive silicon substrate 301 (S 202 ).
  • the texturing process is performed to reduce light reflection at the surface of the substrate 301 , and may be performed by wet etching or dry etching such as reactive ion etching.
  • the unevenness structure of the surface may be formed at only the light-receiving surface, namely the front surface.
  • the first conductive type may be p-type or n-type, and the second conductive type is opposite to the first conductive type. The following description will be based on that the first conductive type is n-type.
  • a thermal diffusion control film 303 having a predetermined thickness is formed along a circumference of the substrate 301 (S 203 ).
  • the thermal diffusion control film 303 plays a role of controlling the degree of thermal diffusion at a certain region when a thermal diffusion process is performed, and the thickness should be set to allow ion implantation.
  • the ion implantation includes all kinds of methods where ions are implanted in a particle state. Particularly, any one of ion implantation, ion doping, plasma doping and plasma ion showering may be used.
  • a thermal diffusion control film 303 on the front surface of the substrate 301 may have a smaller thickness than that of the back surface and the side surfaces of the substrate so that p+ or n+ impurities may be diffused to the front surface of the substrate 301 .
  • the thermal diffusion control film 303 may be configured with, for example, a silicon oxide film (SiO 2 ) or a silicon oxide glass (SOG), and may be formed by a general film laminating method such as plasma enhanced chemical vapor deposition (PECVD), thermal oxidation, wet oxidation, spin-on method, spraying and sputtering.
  • PECVD plasma enhanced chemical vapor deposition
  • second conductive impurity ions namely p-type impurity ions such as boron (B) or the like, are implanted onto the back surface of the substrate 301 to form a p-type impurity region 304 (S 204 ).
  • the ions should pass through the thermal diffusion control film 303 and be implanted to a certain region of the back surface of the substrate 301 , and this may be controlled by means of ion implantation energy, which is about 10 to 50 keV.
  • the p-type impurity ions may be implanted by using any one of ion implanting, ion doping and plasma doping.
  • the p-type impurity region 304 is activated by a thermal diffusion process described later.
  • ions with a concentration corresponding thereto should be injected so that the p+ emitter region 307 may have a sheet resistance of 10 to 60 ⁇ /sq., and the p+ emitter region 307 may have a depth of about 0.3 to 2 ⁇ m.
  • the thermal diffusion control film 303 and the substrate at the back surface of the substrate 301 are selectively removed at a portion corresponding to a region where the high-concentration back field layer (n+) 305 is formed (S 205 ).
  • the substrate is partially removed along with the thermal diffusion control film in order to remove the p-type impurity region so that the influence of the p-type impurity region to the concentration of the high-concentration back field layer (n+) generated by a thermal diffusion process described later may be minimized.
  • the thermal diffusion control film 303 and a predetermined thickness of the substrate may be removed by irradiating laser onto the thermal diffusion control film 303 at a region where the high-concentration back field layer (n+) 305 is formed.
  • the thickness of the substrate 301 removed by laser irradiation suitably corresponds to the depth of the p-type impurity region 304 .
  • an etching paste may be used instead of laser ablation.
  • the thermal diffusion control film 303 and the predetermined thickness of the substrate 301 may be removed by applying an etching paste onto the thermal diffusion control film 303 by means of ink-jet printing or screen printing at a region where the high-concentration back field layer (n+) is formed.
  • dry etching such as reactive ion etching may be used.
  • the predetermined thickness of the substrate may be secondarily etched and removed by using an alkali solution or the like, and along with it, the substrate damaged when removing the thermal diffusion control film may be cured.
  • a thermal diffusion process is performed to form the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n ⁇ ) 306 simultaneously and the p-type impurity region 304 is activated to form the p+ emitter region 307 (S 206 ).
  • the silicon substrate 301 is provided in a chamber, and first conductive impurity ions, namely gas (for example, POCl 3 ) containing n-type impurity ions, is supplied into the chamber so that phosphorus (P) ions are diffused into the substrate 301 .
  • the exposed region of the back surface of the substrate 301 by removing the thermal diffusion control film 303 exhibits relatively greater diffusion of impurity ions in comparison to a region where the thermal diffusion control film 303 is provided. Accordingly, the high-concentration back field layer (n+) 305 is formed at the exposed region of the back surface of the substrate 301 , and the low-concentration front field layer (n ⁇ ) 306 is formed at the front surface of the substrate 301 where the thermal diffusion control film 303 is provided.
  • Concentrations of the impurity ions in the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n ⁇ ) 306 may be adjusted so that sheet resistances of the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n ⁇ ) 306 are respectively 10 to 80 ⁇ /sq and 50 to 150 ⁇ /sq.
  • the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n ⁇ ) 306 may have depths of 0.2 to 1.5 ⁇ m and 0.1 to 0.4 ⁇ m, respectively.
  • BBr 3 gas may be used instead of the POCl 3 gas.
  • the thermal diffusion process of the n-type impurity ions may use a method where a film is formed on the surface of the silicon substrate 301 by immersing the silicon substrate 301 in a solution containing n-type impurity ions, for example a phosphorous acid (H 3 PO 4 ) solution or a material containing phosphorus (P) or by applying the solution by means of spraying or performing spin-on coating or the like, followed by thermal treatment so that the phosphorus (P) ions are diffused into the substrate 301 to form the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n ⁇ ) 306 .
  • a solution containing n-type impurity ions for example a phosphorous acid (H 3 PO 4 ) solution or a material containing phosphorus (P)
  • thermal treatment so that the phosphorus (P) ions are diffused into the substrate 301 to form the high-concentration back field layer (n+) 305 and the low-concentration front
  • FIGS. 4 a to 4 g are cross-sectional views for illustrating the method for manufacturing a back electrode-type solar cell according to the second embodiment of the present disclosure.
  • the second embodiment of the present disclosure is characterized in that the diffusion of n-type impurity ions into the p+ emitter region 307 is perfectly prevented when the thermal diffusion process is performed.
  • FIG. 4 d in a state where the p-type impurity region 304 is formed, an anti-diffusion film 401 is laminated on the thermal diffusion control film 303 at the back surface of the substrate 301 , and then, as shown in FIG. 4 e , the thermal diffusion control film 303 , the anti-diffusion film 401 and a predetermined thickness of the substrate are selectively removed at a portion where the high-concentration back field layer (n+) 305 is to be formed, to expose the back surface of the substrate 301 .
  • n+ high-concentration back field layer
  • a thermal diffusion process is performed to form the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n ⁇ ) 306 , and the p-type impurity region 304 is activated to form the p+ emitter region 307 .
  • the anti-diffusion film 401 is representatively a film having an insulating film corresponding to the above, for example a silicon nitride film (SiNx), silicon oxide glass (SOG), an intrinsic amorphous silicon film or the like.
  • SiNx silicon nitride film
  • SOG silicon oxide glass
  • an intrinsic amorphous silicon film or the like for example a silicon nitride film (SiNx), silicon oxide glass (SOG), an intrinsic amorphous silicon film or the like.
  • the thermal diffusion control film 303 and the anti-diffusion film 401 are removed. Meanwhile, the texturing process, the process of forming the thermal diffusion control film 303 , the process of forming the p-type
  • a back surface field may be easily formed by a single ion implantation process and a single thermal diffusion process, and the patterning work may be minimized.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.

Description

TECHNICAL FIELD
The present disclosure relates to a method for manufacturing a back electrode-type solar cell, and more particularly, to a method for manufacturing a back electrode-type solar cell, which may minimize the number of processes by grafting a doping process using ion implantation and a thermal diffusion process when forming a p+ region and an n+ region at the back surface of a substrate.
BACKGROUND ART
A solar cell is a core element of solar-light power generation, which directly transforms solar light into electricity, and it may be basically considered as a diode having a p-n junction. Solar light is transformed into electricity by a solar cell as follows. If solar light is incident to a p-n junction of a solar cell, an electron-hole pair is generated, and due to the electric field, electrons move to an n layer and holes move to a p layer, thereby generating photoelectromotive force between the p-n junctions. In this way, if a load or system is connected to both terminals of the solar cell, an electric power may flow to generate power.
A general solar cell is configured to have a front surface and a back electrode respectively at front and back surfaces of the solar cell. Since the front electrode is provided to the front surface which is a light-receiving surface, the light-receiving area decreases as much as the area of the front electrode. In order to solve the decrease of the light-receiving area, a back electrode-type solar cell has been proposed. The back electrode-type solar cell maximizes the light-receiving area of the front surface of the solar cell by providing a (+) electrode and a (−) electrode on a back surface of the solar cell.
FIG. 1 is a cross-sectional view showing a back electrode-type solar cell proposed in U.S. Pat. No. 7,339,110. Referring to FIG. 1, a p+ region where p-type impurity ions are implanted and a n+ region where n-type impurity ions are implanted by thermal diffusion are provided at the back surface of a silicon substrate, and interdigitated metal electrodes 50, 52 are provided on the p+ region and the n+ region.
In a method for manufacturing a back electrode-type solar cell disclosed in U.S. Pat. No. 7,339,110, thermal diffusion processes are respectively performed to form a p+ region and an n+ region, and an oxide film generated by each thermal diffusion process should be removed. When the thermal diffusion process is performed to form the n+ region, in order to define the n+ region, a process of selectively patterning an oxide film generated when the p+ region is formed is added.
As described above, in the conventional method for manufacturing a back electrode-type solar cell, two thermal diffusion processes must be performed, and at least four photolithography processes and etching processes are required for patterning oxide films and etching masks, resulting in very complicated processes.
DISCLOSURE Technical Problem
The present disclosure is designed to solve the above problem and the present disclosure is directed to providing a method for manufacturing a back electrode-type solar cell, which may minimize the number of processes by grafting a doping process using ion implantation and a thermal diffusion process when forming a p+ region and an n+ region at the back surface of a substrate.
Technical Solution
In one general aspect, the present disclosure provides a method for manufacturing a back electrode-type solar cell, which includes: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and activating the p-type impurity region to form a p+ emitter region.
In the patterning of the thermal diffusion control film so that the back surface of the substrate is selectively exposed, the thermal diffusion control film and a predetermined depth of the substrate may be removed at a region where the high-concentration back field layer (n+) is to be formed. In addition, when the thermal diffusion control film and the predetermined depth of the substrate are removed at a region where the high-concentration back field layer (n+) is to be formed, laser may be irradiated onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed so that the thermal diffusion control film and the predetermined depth of the substrate are removed, an etching paste may be applied onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed so that the thermal diffusion control film and the predetermined depth of the substrate are removed, or the thermal diffusion control film and the predetermined depth of the substrate may be removed by means of reactive ion etching at a region where the high-concentration back field layer (n+) is to be formed. The thickness of the removed substrate may correspond to a depth of the p-type impurity region.
In another general aspect, the present disclosure provides a method for manufacturing a back electrode-type solar cell, which includes: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; forming an anti-diffusion film on the back surface of the substrate; patterning the thermal diffusion control film and the anti-diffusion film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and activating the p-type impurity region to form a p+ emitter region.
The thickness of the thermal diffusion control film formed at the front surface of the substrate may be relatively smaller than that of the thermal diffusion control films formed at the back surface and the side surface of the substrate. The p+ emitter region may have a sheet resistance of 10 to 60 Ω/sq., the high-concentration back field layer (n+) may have a sheet resistance of 10 to 80 Ω/sq., and the low-concentration front field layer (n−) may have a sheet resistance of 50 to 150 Ω/sq.
Advantageous Effects
The method for manufacturing a back electrode-type solar cell according to the present disclosure gives the following effects.
A back surface field may be easily formed by a single ion implantation process and a single thermal diffusion process, and the patterning work may be minimized.
DESCRIPTION OF DRAWINGS
FIG. 1 is a diagram showing a conventional back electrode-type solar cell;
FIG. 2 is a flowchart for illustrating a method for manufacturing a back electrode-type solar cell according to a first embodiment of the present disclosure;
FIGS. 3 a to 3 f are cross-sectional views for illustrating the method for manufacturing a back electrode-type solar cell according to the first embodiment of the present disclosure; and
FIGS. 4 a to 4 g are cross-sectional views for illustrating the method for manufacturing a back electrode-type solar cell according to a second embodiment of the present disclosure.
 BEST MODE
Hereinafter, a method for manufacturing a back electrode-type solar cell according to an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. FIG. 2 is a flowchart for illustrating a method for manufacturing a back electrode-type solar cell according to a first embodiment of the present disclosure, and FIGS. 3 a to 3 f are cross-sectional views for illustrating the method for manufacturing a back electrode-type solar cell according to the first embodiment of the present disclosure.
First, as shown in FIGS. 2 and 3 a, a first conductive crystalline silicon substrate 301 is prepared (S201), and a texturing process is performed to form unevenness 302 on the surface of the first conductive silicon substrate 301 (S202). The texturing process is performed to reduce light reflection at the surface of the substrate 301, and may be performed by wet etching or dry etching such as reactive ion etching. The unevenness structure of the surface may be formed at only the light-receiving surface, namely the front surface. The first conductive type may be p-type or n-type, and the second conductive type is opposite to the first conductive type. The following description will be based on that the first conductive type is n-type.
In a state where the texturing process is completed, as shown in FIG. 3 b, a thermal diffusion control film 303 having a predetermined thickness is formed along a circumference of the substrate 301 (S203). The thermal diffusion control film 303 plays a role of controlling the degree of thermal diffusion at a certain region when a thermal diffusion process is performed, and the thickness should be set to allow ion implantation. When impurity ions explained later are implanted, the ion implantation includes all kinds of methods where ions are implanted in a particle state. Particularly, any one of ion implantation, ion doping, plasma doping and plasma ion showering may be used.
In addition, when a thermal diffusion process is performed, a thermal diffusion control film 303 on the front surface of the substrate 301 may have a smaller thickness than that of the back surface and the side surfaces of the substrate so that p+ or n+ impurities may be diffused to the front surface of the substrate 301. The thermal diffusion control film 303 may be configured with, for example, a silicon oxide film (SiO2) or a silicon oxide glass (SOG), and may be formed by a general film laminating method such as plasma enhanced chemical vapor deposition (PECVD), thermal oxidation, wet oxidation, spin-on method, spraying and sputtering.
In a state where the thermal diffusion control film 303 is laminated on the front surface, the back surface and the side surface of the substrate 301, as shown in FIG. 3 c, second conductive impurity ions, namely p-type impurity ions such as boron (B) or the like, are implanted onto the back surface of the substrate 301 to form a p-type impurity region 304 (S204). The ions should pass through the thermal diffusion control film 303 and be implanted to a certain region of the back surface of the substrate 301, and this may be controlled by means of ion implantation energy, which is about 10 to 50 keV. Along with it, the p-type impurity ions may be implanted by using any one of ion implanting, ion doping and plasma doping.
In addition, the p-type impurity region 304 is activated by a thermal diffusion process described later. When the p-type impurity region 304 is formed, ions with a concentration corresponding thereto should be injected so that the p+ emitter region 307 may have a sheet resistance of 10 to 60 Ω/sq., and the p+ emitter region 307 may have a depth of about 0.3 to 2 μm.
In a state where the p-type impurity region 304 is formed, as shown in FIG. 3 d, the thermal diffusion control film 303 and the substrate at the back surface of the substrate 301 are selectively removed at a portion corresponding to a region where the high-concentration back field layer (n+) 305 is formed (S205). The substrate is partially removed along with the thermal diffusion control film in order to remove the p-type impurity region so that the influence of the p-type impurity region to the concentration of the high-concentration back field layer (n+) generated by a thermal diffusion process described later may be minimized.
In order to selectively remove the thermal diffusion control film 303 and a part of the substrate 301, laser ablation may be used. In other words, the thermal diffusion control film 303 and a predetermined thickness of the substrate may be removed by irradiating laser onto the thermal diffusion control film 303 at a region where the high-concentration back field layer (n+) 305 is formed. The thickness of the substrate 301 removed by laser irradiation suitably corresponds to the depth of the p-type impurity region 304.
In addition, an etching paste may be used instead of laser ablation. In detail, the thermal diffusion control film 303 and the predetermined thickness of the substrate 301 may be removed by applying an etching paste onto the thermal diffusion control film 303 by means of ink-jet printing or screen printing at a region where the high-concentration back field layer (n+) is formed. In addition to the above methods, dry etching such as reactive ion etching may be used.
When selectively removing the thermal diffusion control film 303 and a part of the substrate 301, after the thermal diffusion control film 303 is primarily removed, the predetermined thickness of the substrate may be secondarily etched and removed by using an alkali solution or the like, and along with it, the substrate damaged when removing the thermal diffusion control film may be cured.
In this state, as shown in FIG. 3 e, a thermal diffusion process is performed to form the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n−) 306 simultaneously and the p-type impurity region 304 is activated to form the p+ emitter region 307 (S206). In detail, the silicon substrate 301 is provided in a chamber, and first conductive impurity ions, namely gas (for example, POCl3) containing n-type impurity ions, is supplied into the chamber so that phosphorus (P) ions are diffused into the substrate 301. The exposed region of the back surface of the substrate 301 by removing the thermal diffusion control film 303 exhibits relatively greater diffusion of impurity ions in comparison to a region where the thermal diffusion control film 303 is provided. Accordingly, the high-concentration back field layer (n+) 305 is formed at the exposed region of the back surface of the substrate 301, and the low-concentration front field layer (n−) 306 is formed at the front surface of the substrate 301 where the thermal diffusion control film 303 is provided. Concentrations of the impurity ions in the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n−) 306 may be adjusted so that sheet resistances of the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n−) 306 are respectively 10 to 80 Ω/sq and 50 to 150 Ω/sq. Along with it, the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n−) 306 may have depths of 0.2 to 1.5 μm and 0.1 to 0.4 μm, respectively. In a case where the first conductive impurity ions are p-type, BBr3 gas may be used instead of the POCl3 gas.
In addition to the above method using gas, the thermal diffusion process of the n-type impurity ions may use a method where a film is formed on the surface of the silicon substrate 301 by immersing the silicon substrate 301 in a solution containing n-type impurity ions, for example a phosphorous acid (H3PO4) solution or a material containing phosphorus (P) or by applying the solution by means of spraying or performing spin-on coating or the like, followed by thermal treatment so that the phosphorus (P) ions are diffused into the substrate 301 to form the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n−) 306.
Subsequently, as shown in FIG. 3 f, if the thermal diffusion control film 303 and a PSG film which is a byproduct of the thermal diffusion process are removed, the method for manufacturing a back electrode-type solar cell according to an embodiment of the present disclosure is completed.
Next, a method for manufacturing a back electrode-type solar cell according to a second embodiment of the present disclosure will be described. FIGS. 4 a to 4 g are cross-sectional views for illustrating the method for manufacturing a back electrode-type solar cell according to the second embodiment of the present disclosure.
The second embodiment of the present disclosure is characterized in that the diffusion of n-type impurity ions into the p+ emitter region 307 is perfectly prevented when the thermal diffusion process is performed. For this, as shown in FIG. 4 d, in a state where the p-type impurity region 304 is formed, an anti-diffusion film 401 is laminated on the thermal diffusion control film 303 at the back surface of the substrate 301, and then, as shown in FIG. 4 e, the thermal diffusion control film 303, the anti-diffusion film 401 and a predetermined thickness of the substrate are selectively removed at a portion where the high-concentration back field layer (n+) 305 is to be formed, to expose the back surface of the substrate 301. In this state, as shown in FIG. 4 f, a thermal diffusion process is performed to form the high-concentration back field layer (n+) 305 and the low-concentration front field layer (n−) 306, and the p-type impurity region 304 is activated to form the p+ emitter region 307. The anti-diffusion film 401 is representatively a film having an insulating film corresponding to the above, for example a silicon nitride film (SiNx), silicon oxide glass (SOG), an intrinsic amorphous silicon film or the like. Then, as shown in FIG. 4 g, the thermal diffusion control film 303 and the anti-diffusion film 401 are removed. Meanwhile, the texturing process, the process of forming the thermal diffusion control film 303, the process of forming the p-type impurity region 304 are identical to those of the first embodiment and not described in detail here.
INDUSTRIAL APPLICABILITY
According to the present disclosure, a back surface field may be easily formed by a single ion implantation process and a single thermal diffusion process, and the patterning work may be minimized.

Claims (19)

The invention claimed is:
1. A method for manufacturing a back electrode-type solar cell, comprising:
preparing an n-type crystalline silicon substrate;
forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate;
forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate;
patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and
forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.
2. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein, in said patterning of the thermal diffusion control film so that the back surface of the substrate is selectively exposed, comprising removing the thermal diffusion control film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed.
3. The method for manufacturing a back electrode-type solar cell according to claim 2, wherein, in said removing of the thermal diffusion control film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed, comprising irradiating laser onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed.
4. The method for manufacturing a back electrode-type solar cell according to claim 2, wherein, in said removing of the thermal diffusion control film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed, comprising applying an etching paste onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed.
5. The method for manufacturing a back electrode-type solar cell according to claim 2, wherein, in said removing of the thermal diffusion control film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed, comprising removing the thermal diffusion control film and the predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed by means of reactive ion etching.
6. The method for manufacturing a back electrode-type solar cell according to claim 2, wherein the thickness of the removed substrate corresponds to a depth of the p-type impurity region.
7. A method for manufacturing a back electrode-type solar cell, comprising:
preparing an n-type crystalline silicon substrate;
forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate;
forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate;
forming an anti-diffusion film on the back surface of the substrate;
patterning the thermal diffusion control film and the anti-diffusion film so that the back surface of the substrate is selectively exposed; and
forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.
8. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein, in said patterning of the thermal diffusion control film and the anti-diffusion film so that the back surface of the substrate is selectively exposed, comprising removing the thermal diffusion control film, the anti-diffusion film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed.
9. The method for manufacturing a back electrode-type solar cell according to claim 8, wherein, when the thermal diffusion control film, the anti-diffusion film and the predetermined depth of the substrate are removed at a region where the high-concentration back field layer (n+) is to be formed, comprising irradiating laser onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed.
10. The method for manufacturing a back electrode-type solar cell according to claim 8, wherein, when the thermal diffusion control film, the anti-diffusion film and the predetermined depth of the substrate are removed at a region where the high-concentration back field layer (n+) is to be formed, comprising removing the thermal diffusion control film and the predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed by means of reactive ion etching.
11. The method for manufacturing a back electrode-type solar cell according to claim 8, wherein the thickness of the removed substrate corresponds to a depth of the p-type impurity region.
12. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein the thickness of the thermal diffusion control film formed at the front surface of the substrate is relatively smaller than that of the thermal diffusion control films formed at the back surface and the side surface of the substrate.
13. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein the p+ emitter region has a sheet resistance of 10 to 60 Ω/sq.
14. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein the high-concentration back field layer (n+) has a sheet resistance of 10 to 80 Ω/sq.
15. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein the low-concentration front field layer (n−) has a sheet resistance of 50 to 150 Ω/sq.
16. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein the thickness of the thermal diffusion control film formed at the front surface of the substrate is relatively smaller than that of the thermal diffusion control films formed at the back surface and the side surface of the substrate.
17. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein the p+ emitter region has a sheet resistance of 10 to 60 Ω/sq.
18. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein the high-concentration back field layer (n+) has a sheet resistance of 10 to 80 Ω/sq.
19. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein the low-concentration front field layer (n−) has a sheet resistance of 50 to 150 Ω/sq.
US13/519,249 2010-01-18 2011-01-18 Method for fabricating a back contact solar cell Expired - Fee Related US8461011B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020100004272A KR101027829B1 (en) 2010-01-18 2010-01-18 Method for fabricating back contact solar cell
KR10-2010-0004272 2010-01-18
PCT/KR2011/000354 WO2011087341A2 (en) 2010-01-18 2011-01-18 Method for fabricating a back contact solar cell

Publications (2)

Publication Number Publication Date
US20120282732A1 US20120282732A1 (en) 2012-11-08
US8461011B2 true US8461011B2 (en) 2013-06-11

Family

ID=44049808

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/519,249 Expired - Fee Related US8461011B2 (en) 2010-01-18 2011-01-18 Method for fabricating a back contact solar cell

Country Status (6)

Country Link
US (1) US8461011B2 (en)
EP (1) EP2528105A4 (en)
JP (1) JP5518212B2 (en)
KR (1) KR101027829B1 (en)
CN (1) CN102725867B (en)
WO (1) WO2011087341A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150162467A1 (en) * 2011-12-05 2015-06-11 Lg Electronics Inc. Solar cell and method for manufacturing the same
KR20150132323A (en) * 2013-03-15 2015-11-25 선파워 코포레이션 Methods for improving solar cell lifetime and efficiency
WO2016023780A1 (en) * 2014-08-11 2016-02-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Method for producing doping regions in a semiconductor layer of a semiconductor component
US20220020894A2 (en) * 2015-03-27 2022-01-20 Sunpower Corporation Solar cell emitter region fabrication using substrate-level ion implantation

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5723143B2 (en) * 2010-12-06 2015-05-27 シャープ株式会社 Manufacturing method of back electrode type solar cell and back electrode type solar cell
CN102832263B (en) * 2011-06-15 2015-01-14 茂迪股份有限公司 Solar cell having back surface field structures and manufacturing method thereof
KR101875747B1 (en) * 2011-12-16 2018-07-06 엘지전자 주식회사 Method for manufacturing solar cell
KR101958819B1 (en) * 2012-01-27 2019-03-15 엘지전자 주식회사 Method for manufacturing a bifacial solar cell
KR101345506B1 (en) * 2012-02-01 2013-12-27 현대중공업 주식회사 Back contact solar cell and method for fabricating the same
KR101872786B1 (en) * 2012-06-22 2018-06-29 엘지전자 주식회사 Method for manufacturing solar cell and dopant layer thereof
CN103367539B (en) * 2013-06-26 2015-09-09 英利集团有限公司 The manufacture method of IBC solar cell and IBC solar cell
CN103311376A (en) * 2013-06-26 2013-09-18 英利集团有限公司 Manufacturing method for N type solar cell
DE102013219603A1 (en) * 2013-09-27 2015-04-02 International Solar Energy Research Center Konstanz E.V. Process for producing a solar cell
CN103560168A (en) * 2013-10-23 2014-02-05 中电电气（扬州）光伏有限公司 Process for manufacturing PERC solar cell
CN104810363B (en) * 2014-01-26 2018-04-17 北大方正集团有限公司 Power IC device and preparation method thereof
JP2015144149A (en) * 2014-01-31 2015-08-06 シャープ株式会社 Photoelectric conversion device and manufacturing method of the same
US20150349180A1 (en) * 2014-05-30 2015-12-03 David D. Smith Relative dopant concentration levels in solar cells
KR101661807B1 (en) * 2014-07-28 2016-09-30 엘지전자 주식회사 Solar cell and the manufacturing mathod thereof
CN105702797A (en) * 2014-11-27 2016-06-22 上海晶玺电子科技有限公司 Manufacturing method of double-face battery
KR102320551B1 (en) * 2015-01-16 2021-11-01 엘지전자 주식회사 Method for manufacturing solar cell
CN104752567A (en) * 2015-04-24 2015-07-01 中建材浚鑫科技股份有限公司 Cooling junction pushing and diffusion process
KR101680036B1 (en) * 2015-07-07 2016-12-12 엘지전자 주식회사 Solar cell and method for manufacturing the same
US9634178B1 (en) * 2015-12-16 2017-04-25 Sunpower Corporation Method of using laser welding to ohmic contact of metallic thermal and diffusion barrier layer for foil-based metallization of solar cells
KR102657230B1 (en) * 2016-11-04 2024-04-12 오씨아이 주식회사 Solar cell and manufacturing method thereof
CN113871494B (en) * 2020-06-30 2024-03-15 泰州隆基乐叶光伏科技有限公司 Solar cell and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020049718A (en) 2000-12-20 2002-06-26 김순택 Formation method of junction for solar cell
KR100757797B1 (en) 2006-02-03 2007-09-11 주식회사 실트론 Manufacture method for rear contact in single crystal solar cell
KR100766254B1 (en) 2005-10-20 2007-10-15 동부일렉트로닉스 주식회사 Method for forming of junction for solar cell
US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3530026B2 (en) * 1997-06-30 2004-05-24 株式会社東芝 Semiconductor device and manufacturing method thereof
CN102420271B (en) * 2005-12-21 2016-07-06 太阳能公司 Back side contact solar cell structures and manufacture method
DE102006003283A1 (en) * 2006-01-23 2007-07-26 Gp Solar Gmbh Fabricating method for semiconductor component e.g. solar cell, involves forming diffusion-inhibiting layer, partial removal of layer in highly doped region, formation of dopant source and diffusion of dopant from dopant source
GB2442254A (en) * 2006-09-29 2008-04-02 Renewable Energy Corp Asa Back contacted solar cell
JP2008186927A (en) * 2007-01-29 2008-08-14 Sharp Corp Back face junction solar battery and manufacturing method therefor
DE102008013445A1 (en) * 2008-02-15 2009-08-27 Ersol Solar Energy Ag Process for producing monocrystalline silicon solar cells with rear-side emitter and base contacts and solar cell, produced by such a process
DE102008013446A1 (en) * 2008-02-15 2009-08-27 Ersol Solar Energy Ag Process for producing monocrystalline n-silicon solar cells and solar cell, produced by such a process
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020049718A (en) 2000-12-20 2002-06-26 김순택 Formation method of junction for solar cell
US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
KR100766254B1 (en) 2005-10-20 2007-10-15 동부일렉트로닉스 주식회사 Method for forming of junction for solar cell
KR100757797B1 (en) 2006-02-03 2007-09-11 주식회사 실트론 Manufacture method for rear contact in single crystal solar cell

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
International Search Report-PCT/KR2011/000354 dated Sep. 27, 2011.
International Search Report—PCT/KR2011/000354 dated Sep. 27, 2011.
Written Opinion-PCT/KR2011/000354 dated Sep. 27, 2011.
Written Opinion—PCT/KR2011/000354 dated Sep. 27, 2011.

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150162467A1 (en) * 2011-12-05 2015-06-11 Lg Electronics Inc. Solar cell and method for manufacturing the same
US9515212B2 (en) * 2011-12-05 2016-12-06 Lg Electronics Inc. Solar cell and method for manufacturing with pre-amorphization implant to form emitter
US9601644B2 (en) 2011-12-05 2017-03-21 Lg Electronics Inc. Method for manufacturing a solar cell
KR20150132323A (en) * 2013-03-15 2015-11-25 선파워 코포레이션 Methods for improving solar cell lifetime and efficiency
KR102242268B1 (en) 2013-03-15 2021-04-19 선파워 코포레이션 Methods for improving solar cell lifetime and efficiency
WO2016023780A1 (en) * 2014-08-11 2016-02-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. Method for producing doping regions in a semiconductor layer of a semiconductor component
US20220020894A2 (en) * 2015-03-27 2022-01-20 Sunpower Corporation Solar cell emitter region fabrication using substrate-level ion implantation
US11942565B2 (en) * 2015-03-27 2024-03-26 Maxeon Solar Pte. Ltd. Solar cell emitter region fabrication using substrate-level ion implantation

Also Published As

Publication number Publication date
CN102725867B (en) 2015-03-25
JP2013516082A (en) 2013-05-09
KR101027829B1 (en) 2011-04-07
US20120282732A1 (en) 2012-11-08
JP5518212B2 (en) 2014-06-11
EP2528105A2 (en) 2012-11-28
CN102725867A (en) 2012-10-10
EP2528105A4 (en) 2015-08-19
WO2011087341A2 (en) 2011-07-21
WO2011087341A3 (en) 2011-12-08

Similar Documents

Publication Publication Date Title
US8461011B2 (en) Method for fabricating a back contact solar cell
KR102142818B1 (en) Process and structures for fabrication of solar cells
US8481356B2 (en) Method for manufacturing a back contact solar cell
KR101225978B1 (en) Sollar Cell And Fabrication Method Thereof
US20170062633A1 (en) Systems and methods for forming foil contact rear emitter solar cell
TW201528344A (en) Solar cell emitter region fabrication using ion implantation
TWI353065B (en) Method for manufacturing solar cell and solar cell
KR20200012029A (en) Metal-foil-assisted fabrication of thin-silicon solar cell
KR101360658B1 (en) Method for forming selective emitter in a solar cell
US20120264253A1 (en) Method of fabricating solar cell
KR20120009682A (en) Method for manufacturing a solar cell
KR101089992B1 (en) Method for forming selective emitter in a solar cell
KR101125450B1 (en) Method for fabricating back contact solar cell
US20120255608A1 (en) Back-surface-field type of heterojunction solar cell and a production method therefor
KR20110078549A (en) Method for forming selective emitter in a solar cell
US20120295391A1 (en) Method of manufacturing a solar cell
KR20120082664A (en) Method for manufacturing solar cell
KR101760011B1 (en) Solar cell and method for manufacturing the same
KR20150021829A (en) Method for fabricating solar cell
KR101397024B1 (en) Method of manufacturing for photovoltaic device
KR20140026670A (en) Back contact solar cell and method of fabricating the same
KR101854237B1 (en) Solar Cell and method of manufacturing the same
KR101302822B1 (en) Method for fabricating selective emitter structure of solar cell using dry texturing and laser chemical process
KR20130048939A (en) Method for forming selective emitter in a solar cell
KR20120122016A (en) Method for fabricating solar cell

Legal Events

Date Code Title Description
AS Assignment

Owner name: HYUNDAI HEAVY INDUSTRIES CO., LTD., KOREA, REPUBLI

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:JEON, MIN SUNG;LEE, WON JAE;CHO, EUN CHEL;AND OTHERS;SIGNING DATES FROM 20120604 TO 20120605;REEL/FRAME:028446/0103

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20170611